JPS63277755A - Production of thin film - Google Patents
Production of thin filmInfo
- Publication number
- JPS63277755A JPS63277755A JP11104787A JP11104787A JPS63277755A JP S63277755 A JPS63277755 A JP S63277755A JP 11104787 A JP11104787 A JP 11104787A JP 11104787 A JP11104787 A JP 11104787A JP S63277755 A JPS63277755 A JP S63277755A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- target
- thin
- sputtering
- starting material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 238000004544 sputter deposition Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 6
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 6
- 239000010941 cobalt Substances 0.000 claims description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical group [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 239000002994 raw material Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 abstract description 13
- 229910001567 cementite Inorganic materials 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 7
- 229910045601 alloy Inorganic materials 0.000 abstract description 5
- 239000000956 alloy Substances 0.000 abstract description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 abstract description 3
- 239000001257 hydrogen Substances 0.000 abstract description 3
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 3
- 239000012159 carrier gas Substances 0.000 abstract description 2
- 238000000354 decomposition reaction Methods 0.000 abstract description 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 2
- 239000007858 starting material Substances 0.000 abstract 3
- 229910018861 (C5H5)2Fe Inorganic materials 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 231100000331 toxic Toxicity 0.000 description 2
- 230000002588 toxic effect Effects 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Manufacturing Of Electric Cables (AREA)
- Physical Vapour Deposition (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、各種機能材料として、広く用いられる金属薄
膜、半導体薄膜、または絶縁体薄膜の製造方法に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for manufacturing metal thin films, semiconductor thin films, or insulator thin films, which are widely used as various functional materials.
従来の技術
近年、マイクロ波を利用する電子サイクロトロン共鳴プ
ラズマＣＶＤ装置ＣＦ！１ｅｃｔｒｏｎ Ｃｙｃｌｏｔ
ｒｏｎＲｅｓｏｎａｎｃｅ Ｐｌａｓｍａ Ｅｎｈａｎ
ｃｅｄ Ｃｈｅｍｉｃａｌ Ｖａｐｏｕｒ Ｄｅ−ｐｏ
ｓｉｔｉｏｎ Ａｐｐａｒａｔｕｓ、以下ＥＣＲ−ＣＶ
ＤＣ開−略称する）による薄膜の製造が行れるようにな
ってきている。この方法によれば、比較的低いガス圧力
（１０−Ｓ〜１Ｏ−３Ｔｏｒｒ）でも高密度のプラズマ
が得られ、低い基板温度でも良質の薄膜が得られること
が知られている。2. Description of the Related Art In recent years, electron cyclotron resonance plasma CVD equipment using microwaves (CF! 1ectron Cyclot
ronResonance Plasma Enhan
ced Chemical Vapor De-po
location Apparatus, hereinafter referred to as ECR-CV
It has become possible to manufacture thin films by DC decoupling (abbreviated as “DC decomposition”). According to this method, it is known that a high-density plasma can be obtained even at a relatively low gas pressure (10 -S to 10 -3 Torr), and a high-quality thin film can be obtained even at a low substrate temperature.
以下図面を参照しながら、従来のＥＣＲ−ＣＶＤ装置に
よる薄膜の製造方法について説明する。A method for manufacturing a thin film using a conventional ECR-CVD apparatus will be described below with reference to the drawings.
第２図は一般的な従来例の場合のＥＣＲ−ＣＶＤ装置の
模式図である。マイクロ波発振機９から出て導波管８を
経由してマイクロ波透過窓７を通過したマイクロ波は磁
場発生器６による磁界の存在するイオン化室１３の中で
イオン化用ガス導入口１０より導入されたガスと反応し
てＥＣＲプラズを発生させる。イオン引出し窓１２を通
って反応処理室５に進入したイオンシャワーは反応ガス
導入口１）より導入されたガスと反応して基板１の上に
薄膜を成長させる。（例えば、日本物理学会誌２２巻１
９８３年Ｌ２１０、松尾、菊池）
発明が解決しようとする問題点
しかしながら上記のような製造方法では、薄膜の成分元
素を増やす場合、新たに添加したい元素を含むガスを導
入する必要がある。しかしながら、適当なガスを得にく
い元素の場合があったり、ガスは得られるが、爆発性や
、毒性があり、取扱いが難しい場合も多い。例えば、ボ
ロンの場合、ジボラン（Ｂ２Ｈ６）というガスを原料に
できるが、毒性が強く、取扱に注意が必要である。FIG. 2 is a schematic diagram of a typical conventional ECR-CVD apparatus. The microwaves that have come out of the microwave oscillator 9 and passed through the microwave transmission window 7 via the waveguide 8 are introduced from the ionization gas inlet 10 into the ionization chamber 13 where a magnetic field from the magnetic field generator 6 exists. reacts with the gas generated to generate ECR plasma. The ion shower that has entered the reaction processing chamber 5 through the ion extraction window 12 reacts with the gas introduced from the reaction gas inlet 1) to grow a thin film on the substrate 1. (For example, Journal of the Physical Society of Japan, Vol. 22, 1
983 L210, Matsuo, Kikuchi) Problems to be Solved by the Invention However, in the above manufacturing method, when increasing the component elements of the thin film, it is necessary to introduce a gas containing the new element to be added. However, there are cases where it is difficult to obtain a suitable gas for the element, and even though gas can be obtained, it is often explosive, toxic, and difficult to handle. For example, in the case of boron, a gas called diborane (B2H6) can be used as a raw material, but it is highly toxic and must be handled with care.
本発明は上記問題点に鑑み、安全でしかも制御性良く薄
膜中に元素を導入し、各種の化合物薄膜や合金薄膜を作
製する薄膜の製造方法を提供するものである。In view of the above-mentioned problems, the present invention provides a thin film manufacturing method for producing various compound thin films and alloy thin films by introducing elements into thin films safely and with good controllability.
問題点を解決するための手段
上記問題点を解決するために本発明の薄膜の製造方法で
は、真空容器中に備えたターゲットに電圧を与えてスパ
ッタリングを起こし、薄膜中にターゲットの成分元素を
ふくませるという手段を用いている。Means for Solving the Problems In order to solve the above problems, the method for producing a thin film of the present invention involves applying a voltage to a target provided in a vacuum container to cause sputtering, thereby wiping out constituent elements of the target into the thin film. I am using the method of letting it happen.
作用
本発明は上記した構成によって、ターゲットに電圧を与
えておくと、ＥＣＲプラズマ中のイオンの衝撃によるス
パッタリングが起こりターゲットを構成している元素を
薄膜中に含ませることができ、添加や、化合物あるいは
合金薄膜の作製を容易に行うことができ、る。Effect of the present invention With the above-described configuration, when a voltage is applied to the target, sputtering occurs due to the impact of ions in the ECR plasma, and the elements constituting the target can be included in the thin film. Alternatively, alloy thin films can be easily produced.
実施例
以下本発明の一実施例の薄膜の製造方法について、図面
を参照しながら説明する。第１図は本発明の一実施例の
薄膜の製造方法に用いるＥＣＲ−ＣＶＤ装置の模式図で
ある。イオン引出し窓１２から出てくるＥＣＲプラズの
一部をターゲット３にあてスパッタリングを起こす。ス
パッタリング用電源４は直流でも交流でもよいが、電圧
、電流もしくは電力を調整できるものを用い、ターゲッ
ト元素の薄膜中への添加量や、化合物薄膜の組成比を制
御する。EXAMPLE Hereinafter, a method for manufacturing a thin film according to an example of the present invention will be described with reference to the drawings. FIG. 1 is a schematic diagram of an ECR-CVD apparatus used in a thin film manufacturing method according to an embodiment of the present invention. A part of the ECR plasma coming out of the ion extraction window 12 is applied to the target 3 to cause sputtering. The sputtering power source 4 may be direct current or alternating current, but a power source capable of adjusting voltage, current, or power is used to control the amount of the target element added to the thin film and the composition ratio of the compound thin film.
本実施例では、マイクロ波発振ａ９の周波数は２．５４
Ｇ）ｌｚとし、イオン化用ガス導入口１０からは水素お
よび窒素を各々Ｏ〜５０３ＣＣＭ導入し、反応ガス導入
口１）より水素またはアルゴンをキャリアガスとしたガ
ス状のフェロセン（ビスシクロペンタジェニル鉄、化学
式は（Ｃｓ Ｈｓ ）！ Ｆｅ）を導入し、ガラス製の
基板工の上に炭化鉄薄膜を作製する。ターゲット３には
コバルトを用い、スパッタリング用電源４の電力を調整
して、炭化鉄中にコバルトを添加し、磁気特性の改善を
行った。In this embodiment, the frequency of microwave oscillation a9 is 2.54
G)lz, hydrogen and nitrogen are each introduced from the ionization gas inlet 10 at 0 to 503 CCM, and gaseous ferrocene (biscyclopentadienyl iron) is introduced from the reaction gas inlet 1) using hydrogen or argon as a carrier gas. , whose chemical formula is (Cs Hs )!Fe) is introduced, and an iron carbide thin film is produced on a glass substrate. Cobalt was used for the target 3, the power of the sputtering power source 4 was adjusted, and cobalt was added to the iron carbide to improve the magnetic properties.
その結果は表に示す用に、本発明の薄膜の製造方法によ
りコバルトを添加した炭化鉄薄膜では、無添加の炭化鉄
薄膜に比べて保磁力が向上することが判明した。これは
高密度磁気記録用媒体として炭化鉄薄膜を用いる場合に
有利である。The results are shown in the table, and it was found that the coercive force of the iron carbide thin film to which cobalt was added by the thin film manufacturing method of the present invention was improved compared to the iron carbide thin film without additives. This is advantageous when using an iron carbide thin film as a high-density magnetic recording medium.
以上のように本実施例によれば、真空容器中に備えたタ
ーゲットに電圧を与えてスパッタリングを起こし、薄膜
中にターゲットの成分元素をふくませるという手段を用
いることにより、炭化鉄薄膜にコバルトを添加させ、磁
気特性の改善をはかることができる。As described above, according to this embodiment, cobalt is applied to a thin iron carbide film by applying a voltage to a target provided in a vacuum container to cause sputtering and incorporating the constituent elements of the target into the thin film. It can be added to improve magnetic properties.
なお、上記実施例では、コバルトを添加したが、その他
、耐蝕性の向上にはクロム、高温特性の向上にはボロン
の添加を行うと効果がある。In the above example, cobalt was added, but it is also effective to add chromium to improve corrosion resistance, and boron to improve high temperature characteristics.
また、上記実施例において、炭化鉄薄膜を用いたが、こ
れに限らずその他の種類の薄膜であっても良い。Further, in the above embodiments, an iron carbide thin film is used, but the present invention is not limited to this, and other types of thin films may be used.
発明の効果
以上のように本発明では、真空容器中に備えたターゲッ
トに電圧を与えてスパッタリングを起こし、薄膜中にタ
ーゲットの成分元素をふくませるという方法を用いてい
るため、ＥＣＲ−ＣＶＤ装置を用いる薄膜の製造方法と
して、各種元素の添加や、化合物薄膜または合金薄膜の
作製を容易に行えるという効果を有している。Effects of the Invention As described above, the present invention uses a method in which a voltage is applied to a target provided in a vacuum container to cause sputtering, and the constituent elements of the target are included in a thin film. As a manufacturing method for the thin film used, it has the effect of easily adding various elements and manufacturing a compound thin film or an alloy thin film.
第１図は本発明の実施例に用いるＥＣＲ−ＣＶＤ装置の
模式図、第２図は従来例の製造方法で用いるＥＣＲ−Ｃ
ＶＤ装置の模式図である。
１・・・・・・基板、２・・・・・・基板支持台、３・
・・・・・ターゲット、４・・・・・・スパッタリング
用電源、５・・・・・・反応処理室、６・・・・・・磁
場発生器、７・・・・・・マイクロ波透過窓、８・・・
・・・導波管、９・・・・・・マイクロ波発振機、１０
・・・・・・イオン化用ガス導入口、１）・・・・・・
反応ガス導入口、１２・・・・・・イオン引出し窓、Ｉ
３・・・・・・イオン化室。
代理人の氏名 弁理士 中尾敏男 はか１名第１図
第２図Fig. 1 is a schematic diagram of an ECR-CVD apparatus used in an example of the present invention, and Fig. 2 is a schematic diagram of an ECR-CVD apparatus used in a conventional manufacturing method.
It is a schematic diagram of a VD device. 1... Board, 2... Board support stand, 3.
...Target, 4...Power source for sputtering, 5...Reaction processing chamber, 6...Magnetic field generator, 7...Microwave transmission Window, 8...
... Waveguide, 9 ... Microwave oscillator, 10
...Ionization gas inlet, 1)...
Reaction gas inlet, 12...Ion extraction window, I
3...Ionization chamber. Name of agent: Patent attorney Toshio Nakao (1 person) Figure 1 Figure 2
Claims (2)
を発生させ原料ガスを分解して基板上に薄膜を堆積させ
る際に、上記真空容器中に備えたターゲットに電圧を与
えてスパッタリングを起こし、薄膜中にターゲットの成
分元素をふくませることを特徴とする薄膜の製造方法。(1) When depositing a thin film on a substrate by generating electron cyclotron resonance plasma in a vacuum container and decomposing the source gas, a voltage is applied to the target provided in the vacuum container to cause sputtering, A method for producing a thin film, characterized in that a component element of a target is contained in a thin film.
ｅ｝とし、ターゲットをコバルト、クロム、またはボロ
ンとする特許請求の範囲第（１）項記載の薄膜の製造方
法。(2) The raw material gas is ferrocene {(C_5H_5)_2F
The method for producing a thin film according to claim 1, wherein the target is cobalt, chromium, or boron.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11104787A JPS63277755A (en) | 1987-05-07 | 1987-05-07 | Production of thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11104787A JPS63277755A (en) | 1987-05-07 | 1987-05-07 | Production of thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63277755A true JPS63277755A (en) | 1988-11-15 |
Family
ID=14551059
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11104787A Pending JPS63277755A (en) | 1987-05-07 | 1987-05-07 | Production of thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63277755A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0816266B2 (en) * | 1990-10-31 | 1996-02-21 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Device for depositing material in high aspect ratio holes |
| JP4531331B2 (en) * | 2000-05-31 | 2010-08-25 | 高橋 研 | Magnetic thin film, manufacturing method thereof, evaluation method thereof, magnetic head using the same, magnetic recording apparatus and magnetic device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59179152A (en) * | 1983-03-31 | 1984-10-11 | Agency Of Ind Science & Technol | Production of thin film |
| JPS61183471A (en) * | 1985-02-07 | 1986-08-16 | Fujitsu Ltd | Method and device for forming thin film |
-
1987
- 1987-05-07 JP JP11104787A patent/JPS63277755A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59179152A (en) * | 1983-03-31 | 1984-10-11 | Agency Of Ind Science & Technol | Production of thin film |
| JPS61183471A (en) * | 1985-02-07 | 1986-08-16 | Fujitsu Ltd | Method and device for forming thin film |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0816266B2 (en) * | 1990-10-31 | 1996-02-21 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Device for depositing material in high aspect ratio holes |
| JP4531331B2 (en) * | 2000-05-31 | 2010-08-25 | 高橋 研 | Magnetic thin film, manufacturing method thereof, evaluation method thereof, magnetic head using the same, magnetic recording apparatus and magnetic device |
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