JPS63228675A - Package for semiconductor device - Google Patents
Package for semiconductor deviceInfo
- Publication number
- JPS63228675A JPS63228675A JP62063144A JP6314487A JPS63228675A JP S63228675 A JPS63228675 A JP S63228675A JP 62063144 A JP62063144 A JP 62063144A JP 6314487 A JP6314487 A JP 6314487A JP S63228675 A JPS63228675 A JP S63228675A
- Authority
- JP
- Japan
- Prior art keywords
- package
- photodetector
- metal
- protrusion
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000000919 ceramic Substances 0.000 abstract description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 10
- 238000001816 cooling Methods 0.000 abstract description 9
- 239000007788 liquid Substances 0.000 abstract description 8
- 239000000853 adhesive Substances 0.000 abstract description 6
- 230000001070 adhesive effect Effects 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 6
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052802 copper Inorganic materials 0.000 abstract description 3
- 239000010949 copper Substances 0.000 abstract description 3
- 239000001307 helium Substances 0.000 abstract description 3
- 229910052734 helium Inorganic materials 0.000 abstract description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 abstract description 3
- 239000003507 refrigerant Substances 0.000 abstract description 3
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 abstract 1
- 239000002826 coolant Substances 0.000 description 5
- 238000001514 detection method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- AFYPFACVUDMOHA-UHFFFAOYSA-N chlorotrifluoromethane Chemical compound FC(F)(F)Cl AFYPFACVUDMOHA-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/024—Arrangements for cooling, heating, ventilating or temperature compensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置用パッケージに関し、特に裏面照射
型の赤外領域の受光可能な半導体固体受光素子を収容す
る半導体装置用パッケージに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a package for a semiconductor device, and more particularly to a package for a semiconductor device that accommodates a back-illuminated semiconductor solid-state light receiving element capable of receiving light in the infrared region.
赤外領域のための受光可能な半導体固体受光素子は、−
ｉに受光エネルギーが小さく検出時の熱じょう乱雑前を
減少させる必要がある。そのため、低温（例えば３０°
〜１００°ｋ）で動作させる必要があり、素子自体と液
体窒素などの冷媒とが、直接または間接に至近距離に配
置されるのが通例である。A semiconductor solid-state photodetector capable of receiving light in the infrared region is -
Since the received light energy is small, it is necessary to reduce the thermal disturbance during detection. Therefore, low temperatures (e.g. 30°
~100°k), and the device itself and a coolant such as liquid nitrogen are typically placed in close proximity, directly or indirectly.
裏面照射型固体受光素子の一般的な半導体装置用パッケ
ージを第２図に示す。窓の開いたセラミックパッケージ
９に受光部２を表面に備えた半導体基板１（固体受光素
子ともいう）を、接着剤６で接着し、半導体基板１とセ
ラミックパッケージ９上のパット８との間をボンディン
グ線７により接続した後、セラミックパッケージの表面
を金属ブロック５上に接着剤６で接着する。従って、液
体窒素・液体ヘリウムなどの冷媒により前記金属ブロッ
クを冷却することで、固体受光素子を冷却することがで
きる。FIG. 2 shows a typical semiconductor device package of a back-illuminated solid-state photodetector. A semiconductor substrate 1 (also referred to as a solid-state photodetector) having a light receiving section 2 on its surface is bonded to a ceramic package 9 with an open window using an adhesive 6, and a pad 8 on the ceramic package 9 is connected between the semiconductor substrate 1 and the ceramic package 9. After connection by bonding wire 7, the surface of the ceramic package is bonded onto metal block 5 with adhesive 6. Therefore, by cooling the metal block with a coolant such as liquid nitrogen or liquid helium, the solid-state light receiving element can be cooled.
このようなパッケージ構成にすることにより、固体受光
素子表面のボンディング線７を傷つける事無く、固体受
光素子を冷却しながら裏面から入射光１００を入射させ
ることが出来る。具体的な冷却方法を備えた従来の使用
例を第３図に示す。By adopting such a package configuration, the incident light 100 can be made to enter from the back surface while cooling the solid-state light-receiving element without damaging the bonding wire 7 on the surface of the solid-state light-receiving element. A conventional usage example with a specific cooling method is shown in FIG.
固体受光素子を搭載したセラミックパッケージ９を金属
ブロック５上に接着し、前記受光素子の裏面が容器の窓
の方向を向くようにこの金属ブロック５を内部容器１０
の底部に（例えば取付ネジ３Ａで）ネジ止めをする。こ
の際、熱伝導率を良くするためにバッキング材料を間に
はさむことが多い。A ceramic package 9 carrying a solid-state photodetector is adhered onto the metal block 5, and the metal block 5 is attached to the inner container 10 so that the back side of the photodetector faces the window of the container.
Attach the screw (for example, with the mounting screw 3A) to the bottom of the At this time, a backing material is often sandwiched between the two to improve thermal conductivity.
固体素子素子に露滴を着けないためと、保温性を高める
ために外部容器１２と内部容器１１との間を真空引きと
する。また、内部容器１０に冷媒１３（例えば液体窒素
）を充填する。かように構成することにより、固体受光
素子の熱が、セラミックパッケージ９、金属ブロック５
を通して内部容器の底部から金属ブロック・内部容器の
底部を通して冷媒に熱を吸収されて固体受光素子が冷却
される。The space between the outer container 12 and the inner container 11 is evacuated to prevent dew droplets from forming on the solid state element and to improve heat retention. Further, the internal container 10 is filled with a refrigerant 13 (for example, liquid nitrogen). With this configuration, the heat of the solid-state photodetector is transferred to the ceramic package 9 and the metal block 5.
Heat is absorbed by the coolant from the bottom of the inner container through the metal block and the bottom of the inner container, and the solid-state photodetector is cooled.
従来のパッケージでは、固体受光素子が十分に冷却され
ない問題があった。この原因としては、受光部２の熱が
、熱伝導率の悪いセラミックパッケージ９と金属ブロッ
ク５を通して冷媒１３に吸収されるようになっているこ
とがあげられる。従って、従来のセラミックパッケージ
では、前記受光素子が十分に冷却されない問題が解決さ
れない。Conventional packages have a problem in that the solid-state photodetector is not sufficiently cooled. The reason for this is that the heat of the light receiving section 2 is absorbed by the coolant 13 through the ceramic package 9 and the metal block 5, which have poor thermal conductivity. Therefore, the conventional ceramic package does not solve the problem of insufficient cooling of the light receiving element.
本発明の半導体基板用パッケージは、半導体基板の表面
に光検出部を持つ裏面照射型固体受光素子のパッケージ
において、前記半導体基板の表面に直接金属隆起物が接
合して構成される。The package for a semiconductor substrate of the present invention is a package for a back-illuminated solid-state light-receiving element having a photodetecting portion on the surface of the semiconductor substrate, and is constructed by having a metal protrusion directly bonded to the surface of the semiconductor substrate.
本発明の半導体装置用パッケージは、冷媒に接する金属
部の延長端で直接受光部を冷却して、十分な冷却効率が
得られるようにしたので受光部の暗電流によるノイズレ
ベルが下がり良好なＳＮ比が得られる。In the semiconductor device package of the present invention, the light receiving part is directly cooled at the extended end of the metal part in contact with the refrigerant, and sufficient cooling efficiency can be obtained, so that the noise level due to dark current in the light receiving part is reduced and good S/N is achieved. The ratio is obtained.
次に、本発明について図面を参照して説明する。第１図
は本発明の一実施例の半導体装置用パッケージの構成を
示す断面図である。本実施例は、半導体基板１と受光部
２と金属隆起物４と金属ブロック５とセラミックパッケ
ージ９とで構成されている。Next, the present invention will be explained with reference to the drawings. FIG. 1 is a sectional view showing the structure of a package for a semiconductor device according to an embodiment of the present invention. This embodiment is composed of a semiconductor substrate 1, a light receiving section 2, a metal protrusion 4, a metal block 5, and a ceramic package 9.
窓の開いたセラミックパッケージ９に受光部２を備えた
半導体基板１を接着剤６で接着し、半導体基板１上のパ
ット８と、セラミックパッケージ９との間をボンディン
グ線７で接続する。また、あらかじめ例えば銅などの金
属ブロック５と例えば銅・インジウムなどの金属隆起物
４とを一体としたもの（例えば接着または、一体製作し
たもの、一般に熱伝導率のよい材料を使う）のうち金属
隆起物４と受光部２とを接着する（接着剤も熱伝導率の
よいものを用いる）。A semiconductor substrate 1 having a light receiving section 2 is bonded to a ceramic package 9 with an open window using an adhesive 6, and a pad 8 on the semiconductor substrate 1 and the ceramic package 9 are connected with a bonding wire 7. In addition, metal blocks 5 made of copper or the like and metal protrusions 4 made of copper or indium are integrated in advance (for example, glued or integrally manufactured, generally using a material with good thermal conductivity). The raised object 4 and the light receiving part 2 are bonded together (an adhesive with good thermal conductivity is used).
入射光１００は、赤外線領域の光であって、外部からセ
ラミックパッケージ９の穴の開いた部分から入射され、
シリコンなどで作られた半導体基板１を透過して（シリ
コンは、赤外線の透過率がよい）受光部２に到達し電気
信号に変換される。The incident light 100 is light in the infrared region, and is incident from the outside through the holed part of the ceramic package 9.
The light passes through a semiconductor substrate 1 made of silicon or the like (silicon has good infrared transmittance), reaches a light receiving section 2, and is converted into an electrical signal.
一方、液体窒素・液体ヘリウムなどの冷媒で直接冷却さ
れる金属ブロック５から金属隆起物４を通して、受光部
２に接しているので、冷却効果が高く、受光部２から出
力される電気信号の高ＳＮ比が得られる。On the other hand, since the metal block 5, which is directly cooled with a refrigerant such as liquid nitrogen or liquid helium, passes through the metal protrusion 4 and is in contact with the light receiving section 2, the cooling effect is high and the electrical signal output from the light receiving section 2 is high. The signal-to-noise ratio is obtained.
また本実施例は、ボンディング線に対しても安全であり
、従来のパッケージと同様な取り扱いで良く、具体的に
は、第３図に示したのと同様に冷却容器内に取り付ける
ことが出来る。Furthermore, this embodiment is safe against bonding wires, and can be handled in the same way as conventional packages. Specifically, it can be installed in a cooling container in the same manner as shown in FIG.
以上説明したように本発明は、冷媒から金属ブロックや
金属隆起物を通して直接受光部を結び冷却効果が上昇し
なので、受光部の暗電流を低減し、雑音が下がり、入力
赤外光検出のＳＮ比が向上するという効果がある。As explained above, the present invention connects the light receiving section directly from the coolant through a metal block or metal protrusion, increasing the cooling effect, reducing dark current in the light receiving section, lowering noise, and reducing the SN of input infrared light detection. This has the effect of improving the ratio.
第１図は本発明の一実施例の半導体装置用パッケージの
構成を示す断面図、第２図は従来の半導体用のパッケー
ジの構成の一例を示す断面図、第３図は冷却容器内に従
来の半導体装置用パックージを組み込んだ時の断面の略
図である。
１・・・半導体基板、２・・・受光部、３・・・取付穴
、４・・・金属隆起物、５・・・金属ブロック、６・・
・接着剤、７・・・配線、８・・・電極パッド、９・・
・セラミックパッケージ、１００・・・入射光。
＄ｆＷＪ
Ｉ：半導＃基麻 ６−肱１′等Ｉ２：づヒブｊ−
＄ ７：ｄでンテ°Ｉング射捉３： 木
Ｒり＜ Ｌｉ、看ト／ｖット４：食１
６ア繞物 ９：セラＳ・シフパッケージ５二金為
フ“口・シフ ／θθ：入射光第 ２ 図
／’−１’神り侵トシト」λ〔７： Ａζシテイング
線２： ｅ尤４ｆ ３： ’を
壬伽）’ｃツ）３：に剖λ代 ９： セ
ラミツ７ハｅ／ゲ七ジｌ： 今紹鳴７″′ロ１ソゲ
／θρ： ２＼身ギゼＣＺ−膝（刑
第 ３ 回
ｆ：Ｈ，Ｍ４Ｊｉ ９−’ｒ５ｅ−、７ｔｌ’
−７”Ｆ” ／３：ｆｉｉｇ２；受光＃ １
θ）午即察辱FIG. 1 is a sectional view showing the structure of a semiconductor device package according to an embodiment of the present invention, FIG. 2 is a sectional view showing an example of the structure of a conventional semiconductor package, and FIG. 3 is a sectional view showing an example of the structure of a conventional semiconductor package. 2 is a schematic cross-sectional view of the package for a semiconductor device assembled therein. DESCRIPTION OF SYMBOLS 1... Semiconductor board, 2... Light receiving part, 3... Mounting hole, 4... Metal raised object, 5... Metal block, 6...
・Adhesive, 7... Wiring, 8... Electrode pad, 9...
・Ceramic package, 100...Incoming light. $fWJ I: Semiconductor #base 6-elbow 1' etc. I2: Zuhibj-
$ 7: d to capture 3: wood Riri < Li, watch/vt 4: eclipse 1
6A Object 9: Sera S/Schiff Package 5 2nd metal/θθ: Incident light 2nd figure/'-1' Divine invasion' λ [7: Aζ Sitting line 2: e尤4f 3: 'wo Jinga)'ctsu) 3: nianai λdai 9: Ceramitsu 7hae/geshichijil: Ima Shomei 7'''ro1 soge
/θρ: 2\ body gize CZ-knee (punishment 3rd f:H, M4Ji 9-'r5e-, 7tl'
-7”F” /3: fiig2; Light reception #1
θ) Immediate insult
Claims (1)
素子のパッケージにおいて、前記半導体基板の表面に直
接金属隆起物が接合して成ることを特徴とする半導体装
置用パッケージ。What is claimed is: 1. A package for a back-illuminated solid-state light-receiving element having a photodetection section on the surface of a semiconductor substrate, characterized in that a metal protrusion is directly bonded to the surface of the semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62063144A JPS63228675A (en) | 1987-03-17 | 1987-03-17 | Package for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62063144A JPS63228675A (en) | 1987-03-17 | 1987-03-17 | Package for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63228675A true JPS63228675A (en) | 1988-09-22 |
Family
ID=13220759
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62063144A Pending JPS63228675A (en) | 1987-03-17 | 1987-03-17 | Package for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63228675A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018511944A (en) * | 2015-03-25 | 2018-04-26 | クワーン チー インテリジェント フォトニック テクノロジー リミテッド | Optical signal receiver |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5276892A (en) * | 1975-12-23 | 1977-06-28 | Fujitsu Ltd | Production of infra-red ray detector |
-
1987
- 1987-03-17 JP JP62063144A patent/JPS63228675A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5276892A (en) * | 1975-12-23 | 1977-06-28 | Fujitsu Ltd | Production of infra-red ray detector |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018511944A (en) * | 2015-03-25 | 2018-04-26 | クワーン チー インテリジェント フォトニック テクノロジー リミテッド | Optical signal receiver |
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