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JPS6320457U - - Google Patents

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Publication number
JPS6320457U
JPS6320457U JP11329086U JP11329086U JPS6320457U JP S6320457 U JPS6320457 U JP S6320457U JP 11329086 U JP11329086 U JP 11329086U JP 11329086 U JP11329086 U JP 11329086U JP S6320457 U JPS6320457 U JP S6320457U
Authority
JP
Japan
Prior art keywords
surge
integrated circuit
semiconductor device
utility
model registration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11329086U
Other languages
Japanese (ja)
Other versions
JPH056672Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1986113290U priority Critical patent/JPH056672Y2/ja
Publication of JPS6320457U publication Critical patent/JPS6320457U/ja
Application granted granted Critical
Publication of JPH056672Y2 publication Critical patent/JPH056672Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図及び第２図は夫々本考案の一実施例を示
す図であり、第２図のＡは平面を示す図、ＢはＡ
におけるＸ―Ｘ′での断面を示す図、第３図は従
来例を示す図である。 Ｄ１〜Ｄ８……サージ吸収素子、Ａ……第１の
端子、Ｂ〜Ｅ……第２の端子、１……半導体基板
、２ａ〜２ｅ……半導体領域、３ａ〜３ｅ……電
極、４……絶縁膜。 1 and 2 are views showing an embodiment of the present invention, respectively, A in FIG. 2 is a plan view, and B is A.
FIG. 3 is a diagram showing a conventional example. D1 - D8 ...Surge absorption element, A...First terminal, B-E...Second terminal, 1...Semiconductor substrate, 2a-2e...Semiconductor region, 3a-3e...Electrode, 4...Insulating film.

Claims (1)

【実用新案登録請求の範囲】 (1) ＰＮ接合を直列接続することにより双方向
のサージ抑制電圧をもつ半導体装置において、保
護すべき集積回路の基準端子に接続される第１の
端子に電気的に結合されたサージ吸収素子を共通
として備えると共に、前記集積回路の複数の被保
護端子に夫々接続される複数の第２の端子に夫々
電気的に結合されるサージ吸収素子を備えたこと
を特徴とするサージ吸収用半導体装置。 (2) 前記サージ吸収素子が個別の素子からなる
ことを特徴とする実用新案登録請求の範囲に記載
したサージ吸収用半導体装置。 (3) 前記サージ吸収素子が同一の半導体基板に
形成されたことを特徴とする実用新案登録請求の
範囲に記載したサージ吸収用半導体装置。[Claims for Utility Model Registration] (1) In a semiconductor device that has a bidirectional surge suppression voltage by connecting PN junctions in series, an electrical connection is made to the first terminal connected to the reference terminal of the integrated circuit to be protected. The integrated circuit includes a common surge absorbing element coupled to the integrated circuit, and a surge absorbing element electrically coupled to each of the plurality of second terminals respectively connected to the plurality of protected terminals of the integrated circuit. Semiconductor device for surge absorption. (2) The surge absorbing semiconductor device as claimed in the utility model registration claim, wherein the surge absorbing element is composed of individual elements. (3) A semiconductor device for surge absorption as set forth in the claims for utility model registration, characterized in that the surge absorption elements are formed on the same semiconductor substrate.
JP1986113290U 1986-07-23 1986-07-23 Expired - Lifetime JPH056672Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1986113290U JPH056672Y2 (en) 1986-07-23 1986-07-23

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1986113290U JPH056672Y2 (en) 1986-07-23 1986-07-23

Publications (2)

Publication Number Publication Date
JPS6320457U true JPS6320457U (en) 1988-02-10
JPH056672Y2 JPH056672Y2 (en) 1993-02-19

Family

ID=30994954

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1986113290U Expired - Lifetime JPH056672Y2 (en) 1986-07-23 1986-07-23

Country Status (1)

Country Link
JP (1) JPH056672Y2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05169252A (en) * 1991-12-24 1993-07-09 Tadashi Oguri Jig and method for making u-shaped cutting of square pipe or column material for steel-frame building
JP2015181144A (en) * 2014-03-05 2015-10-15 ローム株式会社 bidirectional Zener diode

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57154878A (en) * 1981-03-20 1982-09-24 Hitachi Ltd Semiconductor sensor
JPS57154879A (en) * 1981-02-04 1982-09-24 Rca Corp Semiconductor device
JPS614985U (en) * 1984-06-15 1986-01-13 株式会社 電制 Composite display device
JPS61173167A (en) * 1985-01-28 1986-08-04 Matsushita Electric Ind Co Ltd Method for measuring resistance value of chip resistor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54126826A (en) * 1978-02-20 1979-10-02 Honda Motor Co Ltd Air fuel ratio controller for internal combustion engine

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57154879A (en) * 1981-02-04 1982-09-24 Rca Corp Semiconductor device
JPS57154878A (en) * 1981-03-20 1982-09-24 Hitachi Ltd Semiconductor sensor
JPS614985U (en) * 1984-06-15 1986-01-13 株式会社 電制 Composite display device
JPS61173167A (en) * 1985-01-28 1986-08-04 Matsushita Electric Ind Co Ltd Method for measuring resistance value of chip resistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05169252A (en) * 1991-12-24 1993-07-09 Tadashi Oguri Jig and method for making u-shaped cutting of square pipe or column material for steel-frame building
JP2015181144A (en) * 2014-03-05 2015-10-15 ローム株式会社 bidirectional Zener diode

Also Published As

Publication number Publication date
JPH056672Y2 (en) 1993-02-19

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