JPS63185552U - - Google Patents
Info
- Publication number
- JPS63185552U JPS63185552U JP7785187U JP7785187U JPS63185552U JP S63185552 U JPS63185552 U JP S63185552U JP 7785187 U JP7785187 U JP 7785187U JP 7785187 U JP7785187 U JP 7785187U JP S63185552 U JPS63185552 U JP S63185552U
- Authority
- JP
- Japan
- Prior art keywords
- sets
- electrodes
- insulating substrate
- interval
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Description
第１図と第２図はこの考案の実施例の上面図と
側面図、第３図はその電気的等価回路、第４図は
その特性線図、第５図は他の実施例の側面図、第
６図は更に他の実施例の上面図、第７図はその側
面図、第８図は従来のものゝ上面図、第９図はそ
の側面図、第１０図はこの考案の原理を説明する
上面図、第１１図はその側面図、第１２図乃至第
１４図は半導体式ガス感知素子の特性線図である
。
１……絶縁基板、２，２′，２″……電極、２
，２′で１組を、２′，２″で他の１組の電極を
構成する。３……ガス感応膜、５……ヒータ、ｄ
……１組の電極２，２′の間隔、ｄ′……他の組
の電極２′，２″の間隔。
Figures 1 and 2 are top and side views of an embodiment of this invention, Figure 3 is its electrical equivalent circuit, Figure 4 is its characteristic diagram, and Figure 5 is a side view of another embodiment. , Fig. 6 is a top view of yet another embodiment, Fig. 7 is a side view thereof, Fig. 8 is a top view of the conventional one, Fig. 9 is a side view thereof, and Fig. 10 illustrates the principle of this invention. FIG. 11 is a top view, a side view is shown, and FIGS. 12 to 14 are characteristic diagrams of the semiconductor gas sensing element. 1... Insulating substrate, 2, 2', 2''... Electrode, 2
, 2' constitute one set, and 2', 2'' constitute another set of electrodes. 3... Gas sensitive membrane, 5... Heater, d
... Distance between one set of electrodes 2, 2', d'... Distance between another set of electrodes 2', 2''.
Claims (1)
け、該電極の１部あるいは全部を覆うように、上
記絶縁基板の表面に金属酸化物半導体からなるガ
ス感応膜を形成し、且つ上記電極の少なくとも１
組の間隔を他の組の間隔より狭くしたことを特徴
とする半導体式ガス感知素子。 Two or more sets of electrodes are provided on the surface of a heat-resistant insulating substrate, a gas-sensitive film made of a metal oxide semiconductor is formed on the surface of the insulating substrate so as to cover part or all of the electrodes, and at least one of
1. A semiconductor gas sensing element characterized in that the interval between sets is narrower than the interval between other sets.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7785187U JPS63185552U (en) | 1987-05-22 | 1987-05-22 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7785187U JPS63185552U (en) | 1987-05-22 | 1987-05-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63185552U true JPS63185552U (en) | 1988-11-29 |
Family
ID=30926247
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7785187U Pending JPS63185552U (en) | 1987-05-22 | 1987-05-22 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63185552U (en) |
-
1987
- 1987-05-22 JP JP7785187U patent/JPS63185552U/ja active Pending