JPS63164343A - Flip chip ic device - Google Patents
Flip chip ic deviceInfo
- Publication number
- JPS63164343A JPS63164343A JP61312102A JP31210286A JPS63164343A JP S63164343 A JPS63164343 A JP S63164343A JP 61312102 A JP61312102 A JP 61312102A JP 31210286 A JP31210286 A JP 31210286A JP S63164343 A JPS63164343 A JP S63164343A
- Authority
- JP
- Japan
- Prior art keywords
- film
- solder
- bump contact
- chip
- aluminum electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910000679 solder Inorganic materials 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000007772 electroless plating Methods 0.000 claims abstract description 7
- 238000007598 dipping method Methods 0.000 claims abstract 3
- 239000010408 film Substances 0.000 abstract description 38
- 239000010409 thin film Substances 0.000 abstract description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 8
- 238000002161 passivation Methods 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 6
- 229910052759 nickel Inorganic materials 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 2
- 238000007493 shaping process Methods 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000012528 membrane Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000002343 gold Chemical class 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】 産業上の利用分野 本発明はフリップチップＩＣ装置に関するものである。[Detailed description of the invention] Industrial applications The present invention relates to flip-chip IC devices.
従来の技術
従来のフリップチップＩＣ装置においで、その−面に半
田からなる山形のバンプ接点を形成する際には、第２図
に示すように、ＩＣチップ１１のアルミニウム電極１２
には半［１１が付かないため、ＩＣチップ１１のアルミ
ニウム電極１２を配置された一面］二に、真空蒸着やス
パッタリングによりて、アルミニウム電極１２との接着
性の良好なりローム薄膜１３を形成し、次にその上に銅
薄膜１４を形成し、さらにその上に金またはニッケルの
薄膜１５を形成し、次にこれらの薄膜上にレノスト膜を
形成するとともに、フォトリングラフィによってアルミ
ニウム電極１２上のレジスト膜を除去し、前記薄膜１３
．１４．１５を共通電極として半田メッキを行うことに
より半田からなる山形のバンプ接、α１６を形成し、そ
の後前記レノスト膜を除去するとと６に、前記バンプ接
点１６上にレジスト膜を形成し、バンプ接、−居１６以
外の部分の前記各薄膜１３．１４．１５を除去しでいた
。2. Description of the Related Art In a conventional flip chip IC device, when a chevron-shaped bump contact made of solder is formed on the negative side of the device, as shown in FIG.
Form a loam thin film 13 with good adhesion to the aluminum electrode 12 by vacuum evaporation or sputtering on the second half [11 is not attached, so one side on which the aluminum electrode 12 of the IC chip 11 is arranged], Next, a copper thin film 14 is formed thereon, a gold or nickel thin film 15 is further formed thereon, a renost film is formed on these thin films, and a resist film on the aluminum electrode 12 is formed by photolithography. Remove the film and remove the thin film 13.
．． 14. By performing solder plating using 15 as a common electrode, a chevron-shaped bump contact α16 made of solder is formed, and then the Renost film is removed. In step 6, a resist film is formed on the bump contact 16, and the bump The thin films 13, 14, and 15 other than the contact and contact portions 16 were completely removed.
また、上記と同様にＩＣチップｌの一面上にクローム薄
膜１３と銅薄膜１４を形成した後、ｍ薄ｆｆ５！１４上
にレジスト膜を形成するとともに、７オトリソグラフイ
によってアルミニウム１庵１２上のレジスト膜のみを残
して除去し、次にアルミニウム電１１３１−以外の前記
薄膜１３．１４を除去した後、銅薄膜１４−ヒのレノス
ト膜も除去することにより、前記アルミニウム電極１２
上にのみ薄ｖ１３．１４を形成し、その後メタルマスク
を用いて前記アルミニウム電極１２上の銅薄膜１４上に
のみ半田を真空蒸着して山形のバンプ接点１６を形成す
る方法も採用されていた。尚、第２図において、１７は
ＩＣチップ１の一面上のパシベーション膜である。In addition, after forming a chrome thin film 13 and a copper thin film 14 on one surface of the IC chip l in the same manner as above, a resist film is formed on the m-thin FF5! The aluminum electrode 12 is removed by leaving only the resist film, and then removing the thin films 13 and 14 other than the aluminum electrode 1131-, and then also removing the copper thin film 14-1.
A method has also been adopted in which a thin film 13.14 is formed only on the aluminum electrode 12, and then solder is vacuum-deposited only on the copper thin film 14 on the aluminum electrode 12 using a metal mask to form a chevron-shaped bump contact 16. In FIG. 2, 17 is a passivation film on one surface of the IC chip 1. As shown in FIG.
発明が解決しようとする問題点
ところが、上記のように山形のバンブ接点を形成するの
に、３／ｉｉｊまたは２層の金Ｅ４薄膜を形成した後、
エツチングを行い、さらに真空蒸着や電気メッキを行う
という複雑な工程が必要であり、しかも７オトリソグラ
フイに１±マスクが必要であるためコスト高となるとい
う問題があった。Problems to be Solved by the Invention However, in order to form a chevron-shaped bump contact as described above, after forming a 3/iij or two-layer gold E4 thin film,
This method requires complicated steps such as etching, vacuum deposition and electroplating, and also requires 1± mask for 7 otolithography, resulting in high cost.
本発明は従来のこの上うな間り代に鑑み、簡略な工程に
より低コストで山形のバンプ接点を形成できるフリップ
チップＩＣ装置の提供を目的とする。In view of the conventional machining margin, it is an object of the present invention to provide a flip-chip IC device that can form chevron-shaped bump contacts at low cost through simple steps.
問題点を解決するための手段
本発明のフリップチップＩＣ装置は、上記目的を達成す
るため、ＩＣチップの一面に形成されたアルミニウム電
極上に半田に対して接着性の良い金属膜を無電解メッキ
にて形成し、この金！ＸＩＫの上に半田ディツプにて山
形のバンブ接点を形成したことを特徴とする。Means for Solving the Problems In order to achieve the above object, the flip-chip IC device of the present invention employs electroless plating of a metal film with good adhesion to solder on an aluminum electrode formed on one surface of an IC chip. Formed in this gold! A feature is that a chevron-shaped bump contact is formed on the XIK with solder dip.
作用
本発明は上記構成を有するので、無電解メッキを行う際
に、ＩＣチップの一面のアルミニウム電極を除（はぼ全
面に形成されているバシベーシ５ン膜をレノスト膜とし
て利用することができ、ＩＣチップを無電解メッキする
ことによりマスク無しで半田に対して付着性の良い金属
膜を形成でき、この金属膜に半田ディツプにて容易に山
形のバンブ接点を形成することがで島る。Operation Since the present invention has the above-mentioned configuration, when performing electroless plating, the aluminum electrode on one side of the IC chip is removed (the Basibase film formed on almost the entire surface can be used as a Renost film, By electroless plating an IC chip, a metal film with good adhesion to solder can be formed without a mask, and a chevron-shaped bump contact can be easily formed on this metal film using a solder dip.
実施例
以下、本発明の一実施例を第１図を参照しながら説明す
る。EXAMPLE Hereinafter, an example of the present invention will be described with reference to FIG.
１はＩＣチップであって、その−面には略８０００Ａ程
度の厚さのアルミニウム電極２が形成されでおり、かつ
このＩＣチップ１の一面には、アルミニウム電極２を除
いて略全面にパシベーシタン１１ｉ３が形成されている
。このパシベーション膜３をレノスト膜としてＭ′ＩＩ
ｌ解メッキセメツキアルミニウム電極２」−に半田に対
して接着性の良い金属からなる金属膜４が形成されでい
る。この金属Ｆ！４の材質としてはニッケルが最適であ
り、又この金属膜４は１〜１０μｍ程度の厚さに形成す
ればよい。そして、この金属膜４上に半田ディツプにて
山形のバンプ接点５が形成されている。Reference numeral 1 denotes an IC chip, and an aluminum electrode 2 having a thickness of about 8000A is formed on the negative side of the IC chip. is formed. M'II with this passivation film 3 as a Renost film.
A metal film 4 made of a metal with good adhesion to solder is formed on the electrolytically plated aluminum electrode 2. This metal F! The most suitable material for the metal film 4 is nickel, and the metal film 4 may be formed to have a thickness of about 1 to 10 μm. A chevron-shaped bump contact 5 is formed on this metal film 4 by soldering dip.
このように、パシベーション膜３をレジスト膜として利
用することによってマスクが不要となり、また金の薄膜
も不要となり、簡単な工程によって低コストで半田から
なるバンブ接点５を形成することができる。In this way, by using the passivation film 3 as a resist film, a mask and a thin gold film are not required, and the bump contact 5 made of solder can be formed at low cost through a simple process.
本発明は上記実施例に限定されるものではなく、例えば
金属膜としてニッケルからなるものを例示したが、無電
解メッキが可能でかつ半田に対する接着性の良好な他の
金属、例えば銅や鉛にて構成しても良いことは言うまで
もない。The present invention is not limited to the above embodiments. For example, the metal film is made of nickel, but other metals that can be plated electrolessly and have good adhesion to solder, such as copper or lead, may also be used. Needless to say, it may be configured as follows.
発明の効果
本発明のフリップチップＩＣ装置によれば、以上のよう
に、ＩＣチップの一面に形成されているパシベーション
膜をレノスト膜として利用することによって、マスク無
しで半田に対して接着性の良い金属膜をアルミニウム電
極上に無電解メッキにて形成でき、この金属膜に半田デ
ィツプにで容易に山形のバンブ接点を形成することがで
きる。Effects of the Invention According to the flip-chip IC device of the present invention, as described above, by using the passivation film formed on one surface of the IC chip as a Renost film, it is possible to achieve good adhesion to solder without a mask. A metal film can be formed on the aluminum electrode by electroless plating, and a chevron-shaped bump contact can be easily formed on this metal film by solder dip.
したがって、簡略な工程により低コストで半田からなる
山形のバンプ接、αを有するフリップチップＩＣ装置を
製造で終るという効果がある。Therefore, there is an effect that a flip-chip IC device having a chevron-shaped bump contact made of solder, α, can be manufactured at low cost through a simple process.
第１図は本発明の一実施例の断面図、第２図は従来例の
断面図である。
１・・・・・・・・・ＩＣチップ
２・・・・・・・・・アルミニウム電極３・・・・・・
・・・パンベーン１ン膜４・・・・・・・・・金ｊＡ膜FIG. 1 is a sectional view of one embodiment of the present invention, and FIG. 2 is a sectional view of a conventional example. 1...IC chip 2...Aluminum electrode 3...
... Pan vane 1 membrane 4 ... Gold jA membrane
Claims (1)
田に対して接着性の良い金属膜を無電解メッキにて形成
し、この金属膜の上に半田ディップにて山形のバンプ接
点を形成したことを特徴とするフリップチップＩＣ装置
。A metal film with good adhesion to solder is formed by electroless plating on the aluminum electrode formed on one side of the IC chip, and a chevron-shaped bump contact is formed on this metal film by solder dipping. Features of flip chip IC device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61312102A JPS63164343A (en) | 1986-12-26 | 1986-12-26 | Flip chip ic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61312102A JPS63164343A (en) | 1986-12-26 | 1986-12-26 | Flip chip ic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63164343A true JPS63164343A (en) | 1988-07-07 |
Family
ID=18025262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61312102A Pending JPS63164343A (en) | 1986-12-26 | 1986-12-26 | Flip chip ic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63164343A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5478007A (en) * | 1993-04-14 | 1995-12-26 | Amkor Electronics, Inc. | Method for interconnection of integrated circuit chip and substrate |
| US5795818A (en) * | 1996-12-06 | 1998-08-18 | Amkor Technology, Inc. | Integrated circuit chip to substrate interconnection and method |
| US6908311B2 (en) | 2002-04-26 | 2005-06-21 | Sharp Kabushiki Kaisha | Connection terminal and a semiconductor device including at least one connection terminal |
-
1986
- 1986-12-26 JP JP61312102A patent/JPS63164343A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5478007A (en) * | 1993-04-14 | 1995-12-26 | Amkor Electronics, Inc. | Method for interconnection of integrated circuit chip and substrate |
| US5795818A (en) * | 1996-12-06 | 1998-08-18 | Amkor Technology, Inc. | Integrated circuit chip to substrate interconnection and method |
| US6163463A (en) * | 1996-12-06 | 2000-12-19 | Amkor Technology, Inc. | Integrated circuit chip to substrate interconnection |
| US6908311B2 (en) | 2002-04-26 | 2005-06-21 | Sharp Kabushiki Kaisha | Connection terminal and a semiconductor device including at least one connection terminal |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| FR2097133B1 (en) | ||
| JPS63164343A (en) | Flip chip ic device | |
| JPS5773952A (en) | Chip for face down bonding and production thereof | |
| JPS5548954A (en) | Manufacturing of film carrier | |
| GB1241574A (en) | A method of plating conductive metals on film-forming materials | |
| JPS6439528A (en) | Sealing method for infrared-ray transmission window | |
| JPH02253628A (en) | Manufacture of semiconductor device | |
| JPS63122248A (en) | Manufacture of semiconductor device | |
| JPH03101234A (en) | Manufacture of semiconductor device | |
| US3607148A (en) | Solder preforms on a semiconductor wafer | |
| JPS6341238B2 (en) | ||
| KR960000698B1 (en) | Manufacturing method of semiconductor device | |
| JPH03214601A (en) | Electrode structure of variable resistor | |
| KR810000725B1 (en) | Manufacturing method of thin film i.c.circuit | |
| JPS61225839A (en) | Forming method for bump electrode | |
| TW444259B (en) | Fabricating process of thin ball grid array substrate | |
| JPS5419690A (en) | Electrode of semiconductor devices | |
| JPS56135927A (en) | Forming method for electrode of semiconductor device | |
| JPS57139944A (en) | Forming method for solder bump electrode | |
| JPS5519807A (en) | Semiconductor device | |
| JPH0287538A (en) | Tape carrier module | |
| JPS57139945A (en) | Forming method for solder bump electrode | |
| JPH0376190A (en) | Thin-film circuit board | |
| JPS5851512A (en) | Forming method for electrode of semiconductor device | |
| JPS5633858A (en) | Manufacture of semiconductor device |