JPS63130769A - Target material for base alloy for vapor deposition - Google Patents
Target material for base alloy for vapor depositionInfo
- Publication number
- JPS63130769A JPS63130769A JP27769886A JP27769886A JPS63130769A JP S63130769 A JPS63130769 A JP S63130769A JP 27769886 A JP27769886 A JP 27769886A JP 27769886 A JP27769886 A JP 27769886A JP S63130769 A JPS63130769 A JP S63130769A
- Authority
- JP
- Japan
- Prior art keywords
- vapor deposition
- target material
- thin film
- alloy
- kinds
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000956 alloy Substances 0.000 title claims abstract description 45
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 44
- 238000007740 vapor deposition Methods 0.000 title claims abstract description 42
- 239000013077 target material Substances 0.000 title claims abstract description 30
- 229910052771 Terbium Inorganic materials 0.000 claims abstract description 10
- 229910052688 Gadolinium Inorganic materials 0.000 claims abstract description 9
- 229910052779 Neodymium Inorganic materials 0.000 claims abstract description 9
- 229910052742 iron Inorganic materials 0.000 claims abstract description 9
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 9
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 8
- 229910052689 Holmium Inorganic materials 0.000 claims abstract description 7
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- 239000010409 thin film Substances 0.000 abstract description 21
- 239000010408 film Substances 0.000 abstract description 20
- 238000004544 sputter deposition Methods 0.000 abstract description 18
- 230000015572 biosynthetic process Effects 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 9
- 229910052692 Dysprosium Inorganic materials 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000003647 oxidation Effects 0.000 abstract description 4
- 238000007254 oxidation reaction Methods 0.000 abstract description 4
- 229910052761 rare earth metal Inorganic materials 0.000 abstract description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 3
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 15
- 235000012255 calcium oxide Nutrition 0.000 description 14
- 239000000292 calcium oxide Substances 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 239000000203 mixture Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 230000008018 melting Effects 0.000 description 7
- 238000002844 melting Methods 0.000 description 7
- 238000005266 casting Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000011819 refractory material Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- -1 Day Inorganic materials 0.000 description 1
- 229910017061 Fe Co Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910000514 dolomite Inorganic materials 0.000 description 1
- 239000010459 dolomite Substances 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910001004 magnetic alloy Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明はターゲット材又は蒸着用母合金に係り、特に磁
気記録材料として用いられる薄膜の製造に好適なターゲ
ット材又は蒸着用母合金に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a target material or a master alloy for vapor deposition, and more particularly to a target material or a master alloy for vapor deposition suitable for manufacturing a thin film used as a magnetic recording material.
［従来の技術］
非磁性基板上に磁性合金薄膜を形成した磁気記録材料は
周知である。[Prior Art] A magnetic recording material in which a magnetic alloy thin film is formed on a nonmagnetic substrate is well known.
この磁気記録材料の薄膜を製造する方法としては、スパ
ッタリングや真空蒸着、イオンブレーティング等の蒸着
法が広く用いられている。Vapor deposition methods such as sputtering, vacuum evaporation, and ion blating are widely used as methods for producing thin films of magnetic recording materials.
特にスパッタリング法は、均一な内部組成で一定の合金
元素を含んだターゲット材が得られさえすれば、スパッ
タリング装置内の圧力をコントロールしながら組成的に
均一な薄膜を得ることができる点で有利である。In particular, the sputtering method is advantageous in that it is possible to obtain a compositionally uniform thin film while controlling the pressure inside the sputtering device, as long as a target material containing a certain alloying element with a uniform internal composition is obtained. be.
ところで、スパッタリングや真空蒸着により２種以上の
金属よりなる合金膜を形成する場合、そのスパッタター
ゲット又は蒸着源としては、所望とする合金膜の組成に
応じた組成の合金よりなるものが用いられるが、合金の
種類によっては、鋳造、加工によりターゲット又は蒸着
源の形状とするのが困難なものがある。By the way, when forming an alloy film made of two or more metals by sputtering or vacuum evaporation, the sputter target or vapor deposition source used is one made of an alloy whose composition corresponds to the composition of the desired alloy film. Depending on the type of alloy, it may be difficult to form it into the shape of a target or vapor deposition source by casting or processing.
例えば、近年、光磁気ディスクメモリ媒体として、Ｔｂ
−Ｇｄ−Ｆｅ−Ｃｏ系、Ｔ ｂ −Ｆ ｅ系、Ｔｂ’−
Ｇｄ−Ｆｅ系といった、Ｇｄ、Ｔｂ、Ｄ’／等の希土類
金属と、Ｆｅ、Ｃｏ、Ｎｉ等の還啓金属を組み合せたア
モルファス磁性膜か注目されているか、これらのように
希土類金属を多く、例えば１０重量％以上、含有する合
金系は、非常に割れ易く、鋳造、加工により板状にする
ことは非常に困難である。For example, in recent years, Tb
-Gd-Fe-Co system, Tb-Fe system, Tb'-
Amorphous magnetic films such as Gd-Fe series, which combine rare earth metals such as Gd, Tb, D'/, and reduced metals such as Fe, Co, Ni, etc., are attracting attention. For example, an alloy system containing 10% by weight or more is extremely susceptible to breakage and is extremely difficult to form into a plate shape by casting or processing.
従来、ターゲット又は蒸着源の形状とするのが困難な金
属や合金等の材料については、適当な粉末を形成し、こ
れをホットプレス又は高温にて焼成して焼結体となし、
使用に供している。Conventionally, for materials such as metals and alloys that are difficult to form into the shape of a target or evaporation source, it is possible to form a suitable powder and then hot press or sinter it at a high temperature to form a sintered body.
Available for use.
［発明が解決しようとする問題点コ
しかしながら、焼結体ターゲット又は蒸着源では、粉末
プロセスを採用する以上、その純度にも限度があり、ま
た、得られる焼結体の気孔率にも限度があり、十分に緻
密なものが得られない。[Problems to be Solved by the Invention] However, since a powder process is adopted for the sintered target or vapor deposition source, there is a limit to its purity, and there is also a limit to the porosity of the obtained sintered body. However, it is not possible to obtain a sufficiently detailed image.
このようなことから、従来の焼結体製ターゲットや蒸着
源では、
■ 焼結体の気孔中に吸着しているガスがスパッタリン
グ又は蒸着工程において放出され、その真空を度悪化さ
せ、良好なスパッタリング又は蒸着が行いにくくなる。For these reasons, with conventional targets and vapor deposition sources made of sintered bodies, ■ Gas adsorbed in the pores of the sintered body is released during the sputtering or vapor deposition process, which worsens the vacuum and makes it difficult to achieve good sputtering. Or it becomes difficult to perform vapor deposition.
■ 表面に形成された酸化皮膜の存在等によりターゲッ
ト又は蒸着源全体の酸素濃度が著しく高い。(2) The oxygen concentration of the entire target or vapor deposition source is extremely high due to the presence of an oxide film formed on the surface.
■ 酸素の存在のためにＴｂ等の成分元素の酸化による
損耗が大きい。■ Due to the presence of oxygen, component elements such as Tb are subject to large amounts of wear due to oxidation.
■ 緻密度が低いため、そのｍ械的強度も十分に得られ
ず、スパッタリング又は真空蒸着に用いた場合のターゲ
ット又は蒸着源の減肉度が大きく、実用的ではない。(2) Due to its low density, sufficient mechanical strength cannot be obtained, and when used in sputtering or vacuum evaporation, the thickness of the target or evaporation source is large, making it impractical.
等の問題が生じ、形成される膜組成の安定性が悪く、効
率的な膜形成を行うことができなかった。Problems such as these occurred, the stability of the formed film composition was poor, and efficient film formation could not be performed.
［問題点を解決するための手段コ
本発明は上記従来の問題点を解決し、高特性薄膜を安定
かつ効率的に形成することができるターゲット材又は蒸
着用母合金を提供するものであって、
Ｆｅ、Ｇｏ、Ｎｉ及びＣｒよりなる群から選ばれる１
ｆｆｆｉ又は２種以上２０〜９０重量％、Ｔｂ。[Means for Solving the Problems] The present invention solves the above-mentioned conventional problems and provides a target material or a master alloy for vapor deposition that can form a high-characteristic thin film stably and efficiently. , 1 selected from the group consisting of Fe, Go, Ni and Cr
fffi or 20 to 90% by weight of two or more, Tb.
Ｇｄ、Ｄａｙ、Ｎｄ及びＨｏよりなる群から選ばれる１
ｆｆｆｉ又は２種以上１０〜８０重量％及びＣａ１０
〜２００ｐｐｍからなり、０含有量が５００ｐｐｍ以下
であり、溶解鋳造品であることを特徴とするターゲット
材又は蒸着用母合金、を要旨とするものである。1 selected from the group consisting of Gd, Day, Nd and Ho
fffi or two or more 10-80% by weight and Ca10
The target material or the master alloy for vapor deposition is characterized in that it consists of 200 ppm, zero content is 500 ppm or less, and is a melted and cast product.
以下、本発明につき詳細に説明する。Hereinafter, the present invention will be explained in detail.
本発明のターゲット材又は蒸着用母合金は、真空蒸着あ
るはスパッタリング、イオンブレーティング等の蒸着用
材料として用いられ、光磁気ディスク材の製造等に利用
されるものであって、下記組成の溶解鋳造品からなる。The target material or master alloy for vapor deposition of the present invention is used as a material for vapor deposition in vacuum vapor deposition, sputtering, ion blating, etc., and is used for manufacturing magneto-optical disk materials, etc. Consists of castings.
■ Ｆｅ、Ｃｏ、Ｎｉ及びＣｒよりなる群から選ばれる
１種又は２種以上：２０〜９０重量％■ Ｔｂ、Ｇｄ、
Ｄｙ、Ｎｄ及びＨｏよりなる群から選ばれる１種又は２
種以上＝１０〜８０重量％
■ Ｃａ ： １０〜２００ｐｐｍ
また、０含有量は５００ｐｐｍ以下である。■ One or more types selected from the group consisting of Fe, Co, Ni, and Cr: 20 to 90% by weight ■ Tb, Gd,
One or two selected from the group consisting of Dy, Nd and Ho
More than species = 10 to 80% by weight (1) Ca: 10 to 200 ppm Also, the zero content is 500 ppm or less.
本発明において、Ｆｅ、Ｃｏ、Ｎｉ及びＣｒよりなる群
から選ばれる１種又は２種以上の含有量及びＴｂ、Ｃｄ
、Ｄｙ、Ｎｄ及びＨｏよりなる群から選ばれる１ ｆｆ
ｆｉ又は２種以上の含有量は、そのターゲット材又は蒸
着用母合金の用途、即ち形成する薄膜の用途により決定
されるものである。本発明のターゲット材又は蒸着用母
合金は、光磁気ディスク用ターゲット材又は蒸着用母合
金として有用であるが、合金組成としては、次のような
ものが挙げられる。In the present invention, the content of one or more selected from the group consisting of Fe, Co, Ni and Cr and Tb, Cd
1 ff selected from the group consisting of , Dy, Nd and Ho
fi or the content of two or more types is determined by the use of the target material or the vapor deposition master alloy, that is, the use of the thin film to be formed. The target material or vapor deposition master alloy of the present invention is useful as a target material for a magneto-optical disk or a vapor deposition master alloy, and examples of the alloy composition include the following.
ＦｄＣｏ、ＧｄＦｅ、ＴｂＦｅ。FdCo, GdFe, TbFe.
Ｇｄ＋３Ｔｂ＋３Ｆｅ７４．ＴｂＤｙＦｅ。Gd+3Tb+3Fe74. TbDyFe.
ＧｄＴｂＤｙＦｅ、Ｇｄ２ａ（Ｔｂａ＋ＣＯ＋ｅ）７４
Ｔ ｂ ２＋ （Ｆ ｅ ａｓＣＯ１５）７９１（Ｇ
ｄ Ｔ ｂ）２３ＣＯ７７＋
（ＧｄｓｏＴｂｓｏ）＋−ａ（ＦｅａｓＣｏ＋５）ａ本
発明において、Ｃａは、合金の溶製の際に、合金の清浄
化に作用し、また蒸着雰囲気中にてガス成分を捕捉する
ゲッタ作用を有する。Ｃａは、その含有量があまりに多
過ぎると合金特性に影響を及ぼし、また、金属間化合物
の析出により合金を脆くすることがある。このため、本
発明においてはＣａの含有量は２００ｐｐｍ以下とする
。一方、Ｃａの含有量は少な過ぎてもＣａによる十分な
清浄化作用及びゲッタ作用が現れない。このようなこと
から、Ｃａ含有量は１ｏｐｐｍ以上とする。なお、Ｃａ
はＣａＯの形態では本発明の効果は奏し得ないことから
、合金中のＣａの存在形態は金属Ｃａであることが重要
である。GdTbDyFe, Gd2a(Tba+CO+e)74
T b 2+ (F e asCO15) 791 (G
d T b)23CO77+ (GdsoTbso)+-a(FeasCo+5)aIn the present invention, Ca acts on cleaning the alloy during melting of the alloy, and also serves as a getter that captures gas components in the vapor deposition atmosphere. It has an effect. If the Ca content is too large, it may affect the alloy properties and may also cause the alloy to become brittle due to the precipitation of intermetallic compounds. Therefore, in the present invention, the Ca content is set to 200 ppm or less. On the other hand, if the Ca content is too low, sufficient cleaning and gettering effects due to Ca will not occur. For this reason, the Ca content is set to 1 oppm or more. In addition, Ca
Since the effect of the present invention cannot be achieved in the form of CaO, it is important that the form of Ca present in the alloy is metallic Ca.
合金中の０の量が多いと、スパッタリングや蒸着に使用
した際に、スパッタ又は蒸着雲囲気の真空度を悪化させ
たり、また良好なスパッタリング又は蒸着が行えず、高
特性の薄膜が得られない。If the amount of 0 in the alloy is large, when used for sputtering or vapor deposition, the degree of vacuum in the sputtering or vapor deposition cloud may deteriorate, or good sputtering or vapor deposition cannot be performed, making it impossible to obtain a thin film with high characteristics. .
このため、合金中のＯ含有量は５００ｐｐｍ以下とする
。Therefore, the O content in the alloy is set to 500 ppm or less.
同様に合金中のＮの量についても多過ぎると良好な結果
が得られないことから、本発明においては、合金中のＮ
含有量は好ましくは２００ｐｐｍ以下であることが好ま
しい。Similarly, if the amount of N in the alloy is too large, good results cannot be obtained.
The content is preferably 200 ppm or less.
また、本発明において、Ｓｔ、Ｍｎ、Ｐ、Ｓ等の不純物
が合金中に不可避的に含有されるのは、特に問題とはな
らないが、上述したことと同様の理由から、本発明にお
いて、合金中の他の不純物はできるだけ少なくするのが
良く、例えば、Ｓｔ含有量は０．１重量％以下、Ｍｎ含
有量は０． １重量％以下、Ｐ含有量は１００’ ｐ
ｐ ｍ以下、Ｓ含有量は１１００ｐｐ以下とするのが好
ましい。Further, in the present invention, it is not a particular problem that impurities such as St, Mn, P, and S are unavoidably contained in the alloy. It is better to reduce other impurities in it as much as possible, for example, the St content is 0.1% by weight or less, and the Mn content is 0.1% by weight or less. 1% by weight or less, P content is 100'p
pm or less, and the S content is preferably 1100 pp or less.
このような本発明のターゲット材又は蒸着用母合金は、
例えば、以下に説明する方法に従って製造することがで
きる。Such a target material or vapor deposition master alloy of the present invention is
For example, it can be manufactured according to the method described below.
即ち、まず、合金化のための所定量のＦｅ。That is, first, a predetermined amount of Fe for alloying.
Ｃｏ、Ｎｉ、Ｃｒの１種以上及びＴｂ、Ｇｄ。One or more of Co, Ni, Cr and Tb, Gd.
Ｄｙ、Ｎｄ、Ｈｏの１種以上の金属又は合金材料を、内
面がＣａＯ質耐火材で構成された容器中で、真空又はア
ルゴン等の不活性ガス雰囲気等の非酸化性雰囲気にて、
常法例えば高周波あるいは低周波誘導加熱法等で加熱し
て溶解することにより、所望の組成の合金溶湯を得る。One or more metals or alloy materials of Dy, Nd, and Ho are placed in a container whose inner surface is made of a CaO refractory material in a non-oxidizing atmosphere such as a vacuum or an inert gas atmosphere such as argon.
A molten alloy having a desired composition is obtained by heating and melting using a conventional method such as high-frequency or low-frequency induction heating.
本発明において、用いられる容器の内面を構成するＣａ
Ｏ質耐火材としてはカルシア（Ｃａ Ｏ）、共存酸化物
としてＺｒＯ２，Ｙ２Ｏ３などがあげられ、また、ラン
タノイド系の酸化物、ＣａＯを富化したドロマイト等が
挙げられるが、特に、電融カルシアが極めて好適である
。In the present invention, Ca constituting the inner surface of the container used
Examples of O-based refractory materials include calcia (CaO), coexisting oxides such as ZrO2 and Y2O3, and lanthanide-based oxides and dolomite enriched with CaO. Very suitable.
このようなカルシア質炉材は、そのＣａＯ含有率が９０
％以上、特に９５％以上のものが好ましい。Such calcia furnace material has a CaO content of 90
% or more, particularly 95% or more is preferable.
ＣａＯは高融点であると共に、高温で極めて安定であり
、溶製にあたり、金属酸化物を生成して溶湯を不純物に
より汚染することがなく、高清浄な溶湯を得ることが可
能とされる。CaO has a high melting point and is extremely stable at high temperatures, making it possible to obtain a highly clean molten metal without producing metal oxides and contaminating the molten metal with impurities during melting.
特に、ＣａＯ含有量の高いＣａＯ質耐火材で内面が構成
された容器を用いた場合には、脱０、脱Ｓ、脱介在物等
の精錬作用も奏され、極めて有利である。In particular, when a container whose inner surface is made of a CaO-based refractory material with a high CaO content is used, refining effects such as zero removal, S removal, inclusion removal, etc. are also achieved, which is extremely advantageous.
しかも、溶湯中にＴｂ、Ｇｄ、Ｄｙ、Ｎｄ及びＨａ（以
下、Ｒと記す。）が存在するため、溶湯中の脱０、脱Ｓ
が行われ、これに伴って脱Ｎも起こる。また、炉壁材の
ＣａＯとＲとの反応により溶湯中へのＣａの溶出も起こ
る。Moreover, since Tb, Gd, Dy, Nd, and Ha (hereinafter referred to as R) are present in the molten metal, the
is carried out, and along with this, de-N also occurs. Furthermore, Ca is leached into the molten metal due to the reaction between CaO and R in the furnace wall material.
即ち、Ｒは溶湯中のＯと反応して
ｘ Ｒ十ｙ Ｏ４Ｒｘ Ｏｙ
の形となり、Ｒｘ０ｙは炉壁のＣａＯとｎＲｘｏｙ＋ｍ
ｃａｏ→ｎＲｘｏｙ ・ｍｃａ。That is, R reacts with O in the molten metal to form x Rx Oy O4Rx Oy, and Rx0y interacts with CaO on the furnace wall and nRxoy+m
cao → nRxoy ・mca.
のように反応して炉壁に吸収される。また、Ｒは溶湯中
のＳとも０と同様に反応して
ｘＲ＋ｙＳ−＋Ｒｘ５ｙ
の形となり、このＲｘ５ｙがＣａＯと炉壁反応を起こし
て炉壁に吸収される。このように、脱ｏ１脱Ｓが行われ
、それに伴って溶湯中のＮ量も低減される。It reacts like this and is absorbed into the furnace wall. Further, R reacts with S in the molten metal in the same manner as 0, forming the form xR+yS-+Rx5y, and this Rx5y causes a reaction with CaO on the furnace wall and is absorbed into the furnace wall. In this way, O1 removal and S removal are performed, and the amount of N in the molten metal is also reduced accordingly.
従って、内面がＣａＯ質耐火材で構成された容器中で溶
製を行うことにより、本発明の低０含有量の母合金を容
易に得ることができる。Therefore, by carrying out melting in a container whose inner surface is made of a CaO-based refractory material, it is possible to easily obtain the low O content master alloy of the present invention.
また、内面がＣａＯ質耐火材で構成された容器中にて溶
製する際に、溶湯中にＣａの溶出が起こり、得られる合
金中のＣａ含有量を容易に本発明の範囲、即ち１０〜２
００ｐｐｍとすることができる。Further, when melting is performed in a container whose inner surface is made of a CaO-based refractory material, Ca is leached into the molten metal, and the Ca content in the resulting alloy can be easily adjusted to the range of the present invention, that is, 10 to 10. 2
00 ppm.
本発明においては、このようにして得られた合金溶湯を
、常法に従って非酸化性雰囲気下て鋳造する。In the present invention, the molten alloy thus obtained is cast in a non-oxidizing atmosphere according to a conventional method.
このような方法によれば、Ｆｅ、Ｃｏ、Ｎｉ及びＣｒよ
りなる群から選ばれる１種又は２種以上２０〜９０重量
％、Ｔｂ、Ｇｄ、 Ｄｙ、Ｎｄ及び）（０よりなる群か
ら選ばれる１種又は２種以上１０〜８０重量％、Ｃａ１
Ｏ〜２００ｐｐｍからなり、０５００ｐｐｍ以下であり
、溶解鋳造品である本発明のターゲット材又は蒸着用母
合金を極めて容易に製造することができるが、本発明に
おいて、溶解鋳造により得られる母合金は、特に気孔率
５％未満であることが好ましい。According to such a method, 20 to 90% by weight of one or more selected from the group consisting of Fe, Co, Ni and Cr, Tb, Gd, Dy, Nd and 1 type or 2 or more types 10 to 80% by weight, Ca1
The target material or vapor deposition master alloy of the present invention, which is a melt-casting product, can be produced very easily. In particular, the porosity is preferably less than 5%.
［作用コ
本発明のターゲット材又は蒸着用母合金は、Ｏ含有量が
少ないため、Ｔｂ等の酸化に伴う損耗も低減され、効率
的に高特性の磁性薄膜を得ることができる。[Function] Since the target material or vapor deposition master alloy of the present invention has a low O content, wear caused by oxidation of Tb and the like is reduced, and a magnetic thin film with high characteristics can be efficiently obtained.
また、本発明のターゲット材又は蒸着用母合金に含有さ
れるＣａは、真空蒸着又はスパッタリング等の蒸着雰囲
気中にて、
２Ｃａ＋Ｏ７−＋２ＣａＯ
３Ｃａ ＋ Ｎ ２ →Ｃａ ３ Ｎ ２のように反応
して、雰囲気中のガス成分を低下させる、いわゆるゲッ
タ作用を奏する。In addition, Ca contained in the target material or vapor deposition master alloy of the present invention reacts in a vapor deposition atmosphere such as vacuum vapor deposition or sputtering as follows: 2Ca+O7-+2CaO3Ca+N2→Ca3N2, It has a so-called getter effect that reduces gas components in the atmosphere.
このため、蒸着時の薄膜形成安定性及び形成速度を向上
させると共に、得られる薄膜は高純度で磁気特性が大幅
に改善され、高特性薄膜を構成産効率で製造することを
可能とする。Therefore, the stability and formation speed of thin film formation during vapor deposition are improved, and the resulting thin film has high purity and greatly improved magnetic properties, making it possible to manufacture high-performance thin films with high production efficiency.
しかも、本発明のターゲット材又は蒸着用母合金は、鋳
造品であるため、従来の焼結晶の欠点がなく、従来の焼
結晶に比し、膜形成の安定性が良く、膜形成立ち上り時
間の短縮、膜組成変動の低減を図ることができる。Moreover, since the target material or vapor deposition master alloy of the present invention is a cast product, it does not have the disadvantages of conventional fired crystals, and has better film formation stability than conventional fired crystals, and has a shorter film formation rise time. It is possible to shorten the time and reduce film composition fluctuations.
更に熱伝導率が大きく、優れた冷却効果が得られ、温度
勾配が小さいことから、割れ難いという利点をも有する
。Furthermore, it has a high thermal conductivity, provides an excellent cooling effect, and has a small temperature gradient, so it has the advantage of being difficult to crack.
［実施例］ 以下、実施例について説明する。[Example] Examples will be described below.
実施例１、比較例１．２
ＣａＯ坩堝中にて、Ｆｅ５５重量％、Ｇｏ３重量％、Ｔ
ｂ４２重量％となるように不活性ガス雰囲気にて溶製を
行い、Ｃａを５５ｐｐｍ混入させた溶湯を鋳造してター
ゲット材（実施例１）を得た。Example 1, Comparative Example 1.2 In a CaO crucible, 55% by weight of Fe, 3% by weight of Go, T
A target material (Example 1) was obtained by melting in an inert gas atmosphere so that b was 42% by weight, and casting a molten metal mixed with 55 ppm of Ca.
別に５５重量％Ｆｅ−３重量％Ｃｏ−４２重量％Ｔｂの
粉末ホットプレス焼結晶のターゲット材（比較例１）及
びこのターゲット材の表面層をレーザビームで溶融させ
たターゲット材（比較例２）を作製した。Separately, a target material made of powder hot-pressed sintered crystals of 55 wt% Fe-3 wt% Co-42 wt% Tb (Comparative Example 1) and a target material whose surface layer of this target material was melted by a laser beam (Comparative Example 2) was created.
得られた各々のターゲット材のＯ，Ｃａ含有量の分析結
果及び気孔率の測定結果を第１表に示す。Table 1 shows the analysis results of the O and Ca contents and the measurement results of the porosity of each target material obtained.
第１表
また、得られたターゲット材を用いて下記装置仕様及び
条件にて薄膜の形成を行った。Table 1 Also, a thin film was formed using the obtained target material under the following equipment specifications and conditions.
スパッタリング装置仕様
マグネトロンタイプ高周波スパッタリング装置最大比カ
ニ１１ｃｗ
到達真空度： １０−’ｔｏｒｒ
ターゲット寸法：１００ｍｍ（φ）ｘ３ｍｍ（ｔ）スパ
ッタリング条件
スパッタ電カニ５００ｗ
アルゴンガス圧： ５ Ｘ １０ ””ｔｏｒｒ膜形成
時のＴｂ組成の経時変化を示す変動曲線を第１図に示す
。Sputtering equipment specifications Magnetron type high frequency sputtering equipment Maximum ratio crab 11cw Ultimate vacuum: 10-'torr Target dimensions: 100mm (φ) x 3mm (t) Sputtering conditions Sputtering electric crab 500w Argon gas pressure: 5 x 10'' torr During film formation FIG. 1 shows a fluctuation curve showing the change in Tb composition over time.
第１図より、本発明のターゲット材又は蒸着用母合金に
よれば、膜形成における立ち上り時間が短縮され、組成
変動の少ない薄膜を形成することができることが明らか
である。From FIG. 1, it is clear that according to the target material or vapor deposition master alloy of the present invention, the rise time in film formation can be shortened, and a thin film with less compositional fluctuation can be formed.
また、各々１時間のスパッタ処理で形成された膜の磁気
特性及び膜の均一性を調べるために、保持力ＨＣ及び膜
の組成を測定し、各々、結果を第２図及び第３図に示し
た。In addition, in order to investigate the magnetic properties and film uniformity of the films formed by sputtering for 1 hour, we measured the coercive force HC and film composition, and the results are shown in Figures 2 and 3, respectively. Ta.
第２図及び第３図より、本発明のターゲット材又は蒸着
用母合金によれば角型比、回転角共に良好で優れた磁気
特性を有し、膜の均一性も良好な磁性薄膜が得られるこ
とが明らかである。From FIG. 2 and FIG. 3, it is clear that the target material or vapor deposition master alloy of the present invention provides a magnetic thin film that has excellent magnetic properties with good squareness ratio and rotation angle, and also has good film uniformity. It is clear that
［発明の効果］
以上詳述した通り、本発明のターゲット材又は蒸着用母
合金は、Ｆｅ、Ｃｏ、Ｎｉ及びＣｒよりなる群から選ば
れる１種又は２種以上２０〜９０重量％、Ｔｂ、Ｇｄ、
Ｄｙ、Ｎｄ及びＨｏよりなる群から選ばれる１ｆ！！
又は２種以上１０〜８０重量％、Ｃａ１Ｏ〜２００ｐｐ
ｍからなり、０５００ｐｐｍ以下である溶解鋳造品であ
って、■ ０含有量が少ないため、Ｔｂ等の酸化に伴う
損耗が低減される。[Effects of the Invention] As detailed above, the target material or vapor deposition master alloy of the present invention contains 20 to 90% by weight of one or more selected from the group consisting of Fe, Co, Ni, and Cr, Tb, Gd,
1f selected from the group consisting of Dy, Nd and Ho! !
or 2 or more types 10-80% by weight, Ca1O-200pp
It is a melted and cast product consisting of m, with a content of 0,500 ppm or less, and (1) Since the content of 0 is low, wear caused by oxidation of Tb and the like is reduced.
■ Ｃａによるゲッタ作用により蒸着雰囲気中のガス成
分が大幅に低減される。(2) Gas components in the deposition atmosphere are significantly reduced due to the getter action of Ca.
■ 溶解鋳造品であるため、気孔率が低く、従来の焼結
晶の欠点が解消される。■ Since it is a melt-cast product, it has low porosity and eliminates the drawbacks of conventional fired crystals.
■ 熱伝導率が大きく、冷却効果が高い。このため、温
度傾配が小さいので割れ難い。■ High thermal conductivity and high cooling effect. Therefore, since the temperature gradient is small, it is difficult to break.
等の利点を有する。It has the following advantages.
このため、蒸着による膜形成安定性及び膜形成速度が向
上されると共に、得られる薄膜は高純度で極めて磁気特
性に優れたものとなる。Therefore, the stability and speed of film formation by vapor deposition are improved, and the resulting thin film has high purity and extremely excellent magnetic properties.
従って、本発明のターゲット材又は蒸着用母合金によれ
ば、高特性薄膜を高効率で得ることができる。本発明の
ターゲット材又は蒸着用母合金は、特に光磁気ディスク
用薄膜製造用蒸着材料として極めて有用である。Therefore, according to the target material or vapor deposition master alloy of the present invention, a thin film with high characteristics can be obtained with high efficiency. The target material or vapor deposition master alloy of the present invention is particularly useful as a vapor deposition material for producing thin films for magneto-optical disks.
第１図〜第３図は実施例１及び比較例１．２で得られた
結果を示し、第１図は膜のＴｂ組成の変動、第２図は膜
の磁気特性、第３図は膜の均一性の測定結果を示すグラ
フである。
代理人 弁理士 重 野 剛
膜 （基盤との距離：１５０ｍｍ）
中
悄３図
膜 （月る１戸し’−：０，５μｍ）中
山Figures 1 to 3 show the results obtained in Example 1 and Comparative Example 1.2. Figure 1 shows the variation in the Tb composition of the film, Figure 2 shows the magnetic properties of the film, and Figure 3 shows the results obtained in Example 1 and Comparative Example 1.2. 3 is a graph showing the measurement results of uniformity of . Agent Patent Attorney Shigeno Gōmei (distance to base: 150 mm) Nakayama 3 Zu Membrane (Monthly one house'-: 0.5 μm) Nakayama
Claims (1)
る１種又は２種以上２０〜９０重量％、Ｔｂ、Ｇｄ、Ｄ
ｙ、Ｎｄ及びＨｏよりなる群から選ばれる１種又は２種
以上１０〜８０重量％及びＣａ１０〜２００ｐｐｍから
なり、Ｏ含有量が５００ｐμｍ以下であり、溶解鋳造品
であることを特徴とするターゲット材又は蒸着用母合金
。(1) 20-90% by weight of one or more selected from the group consisting of Fe, Co, Ni and Cr, Tb, Gd, D
A target material comprising 10 to 80% by weight of one or more selected from the group consisting of Y, Nd, and Ho, and 10 to 200 ppm of Ca, has an O content of 500 ppm or less, and is a melted and cast product. Or a master alloy for vapor deposition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27769886A JPS63130769A (en) | 1986-11-20 | 1986-11-20 | Target material for base alloy for vapor deposition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27769886A JPS63130769A (en) | 1986-11-20 | 1986-11-20 | Target material for base alloy for vapor deposition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63130769A true JPS63130769A (en) | 1988-06-02 |
| JPH0518899B2 JPH0518899B2 (en) | 1993-03-15 |
Family
ID=17587060
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27769886A Granted JPS63130769A (en) | 1986-11-20 | 1986-11-20 | Target material for base alloy for vapor deposition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63130769A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07171660A (en) * | 1991-08-22 | 1995-07-11 | W C Heraeus Gmbh | Method and casting mold for producing casting consisting of high-temperature crack-sensitive material |
| CN103946415A (en) * | 2012-01-25 | 2014-07-23 | 吉坤日矿日石金属株式会社 | Ferromagnetic material sputtering target |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002069625A (en) * | 2000-09-01 | 2002-03-08 | Mitsui Mining & Smelting Co Ltd | Production method for sputtering target |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6191336A (en) * | 1984-10-09 | 1986-05-09 | Mitsubishi Metal Corp | Production of alloy target material |
-
1986
- 1986-11-20 JP JP27769886A patent/JPS63130769A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6191336A (en) * | 1984-10-09 | 1986-05-09 | Mitsubishi Metal Corp | Production of alloy target material |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07171660A (en) * | 1991-08-22 | 1995-07-11 | W C Heraeus Gmbh | Method and casting mold for producing casting consisting of high-temperature crack-sensitive material |
| CN103946415A (en) * | 2012-01-25 | 2014-07-23 | 吉坤日矿日石金属株式会社 | Ferromagnetic material sputtering target |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0518899B2 (en) | 1993-03-15 |
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