JPS63108781A - Photoelectric conversion device - Google Patents
Photoelectric conversion deviceInfo
- Publication number
- JPS63108781A JPS63108781A JP61254267A JP25426786A JPS63108781A JP S63108781 A JPS63108781 A JP S63108781A JP 61254267 A JP61254267 A JP 61254267A JP 25426786 A JP25426786 A JP 25426786A JP S63108781 A JPS63108781 A JP S63108781A
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- layer
- conversion device
- sections
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000010030 laminating Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 10
- 238000005530 etching Methods 0.000 abstract description 6
- 239000004642 Polyimide Substances 0.000 abstract description 5
- 229920001721 polyimide Polymers 0.000 abstract description 5
- 239000003795 chemical substances by application Substances 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 229910052709 silver Inorganic materials 0.000 abstract description 3
- 239000004332 silver Substances 0.000 abstract description 3
- 229920003002 synthetic resin Polymers 0.000 abstract description 2
- 239000000057 synthetic resin Substances 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract 2
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- 238000000354 decomposition reaction Methods 0.000 abstract 1
- 239000008187 granular material Substances 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000005520 cutting process Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は光電変換装置に閃し、さらに詳しくは光電変換
素子が複数配列され、かつ直列接続される充電変換装置
に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a photoelectric conversion device, and more particularly to a charging conversion device in which a plurality of photoelectric conversion elements are arranged and connected in series.
従来技術
！＄’＄６図は従来技術の光電変換装置１の平面図であ
り、第７図は：ｊＳ６図の切断面線■−■から見た断面
図であり、第３図は第６図の切断面〜１−■から見た断
面図である。充電変換装置１は、複数の光電変換素子２
ａ、２ｂ・・・が直列接続されている。Conventional technology! Figure $'$6 is a plan view of the photoelectric conversion device 1 of the prior art, Figure 7 is a sectional view taken along the cutting plane line ■-■ in Figure jS6, and Figure 3 is a cross-sectional view taken along the cutting line in Figure 6. It is a sectional view seen from plane ~1-■. The charging conversion device 1 includes a plurality of photoelectric conversion elements 2
a, 2b, . . . are connected in series.
その接続構造は、たとえばアルファスシリコン（以下ａ
−Ｓ ｉと略称する）などからなる光電変換素子２ｂ
から外方に突出する下部電ｆｉ４ｂと、隣接する光電変
ＦＡ素子２ｃにおける突出した上部７４極５ｃとが、第
７図に示すように接続されて構成される。The connection structure is, for example, Alphas silicon (hereinafter referred to as a
A photoelectric conversion element 2b consisting of
The lower electrode fi 4b protruding outward from the photoelectric variable FA element 2c and the protruding upper 74 poles 5c of the adjacent photoelectric variable FA element 2c are connected as shown in FIG.
このような接続方法では、充電変換装置１において、何
ら活用されない領域６ａ、６ｂ・・・ができてしまい、
この領域６ａ、６ｂ・・・が無駄となっていた。In such a connection method, areas 6a, 6b, etc. are created in the charging conversion device 1, which are not used at all.
These areas 6a, 6b, . . . were wasted.
発明が解決しようとする問題点
上述したような従来技術においては、活用されない領域
６ａ、６１１・・・が発生するために、光電変換装置１
の総面積に対する充電変換層３ａ、３ｂ・・・による有
効受光面積の比（以下有効面積率と称する）が低下して
しまい、装置のコスト引下げの阻害要因ともなっていた
。Problems to be Solved by the Invention In the prior art as described above, unused areas 6a, 611, etc. occur, so that the photoelectric conversion device 1
The ratio of the effective light-receiving area of the charge conversion layers 3a, 3b, .
本発明の目的は、上述の技術的課題を解決し、有効面積
率を向上させ、コスト引下げを可能とする充電変換装置
を提供することである。An object of the present invention is to provide a charging conversion device that solves the above-mentioned technical problems, improves the effective area ratio, and enables cost reduction.
問題点を解決するための手段
本発明は、絶縁性基板」−に下部電極層、充電変換層、
透明電極層が順次積層されて形成される光電変換索子が
複数配列され、各光電変換素子は接続部を介して直列接
続される充電変換装置において、
重工接続部は光電変換素子の配列方向に沿う両端面の内
力側に設けられていることをＶＩ徴とする充電変換装置
である。Means for Solving the Problems The present invention provides an insulating substrate with a lower electrode layer, a charge conversion layer,
In a charging conversion device in which a plurality of photoelectric conversion cables formed by sequentially stacking transparent electrode layers are arranged, and each photoelectric conversion element is connected in series via a connection part, the heavy engineering connection part is arranged in the direction in which the photoelectric conversion elements are arranged. It is a charging conversion device characterized by VI that it is provided on the internal force side of both end faces along the line.
作 用
本発明に従えば、複数の配列された光電変換素子は、そ
の配列方向に沿う両端面の内方側に設けられる接続部に
よって直列接続されるので、無駄な領域が発生せず、有
効面積率が向上する。Effect According to the present invention, a plurality of arrayed photoelectric conversion elements are connected in series by the connection portions provided on the inner side of both end faces along the array direction, so no wasted area is generated and effective Area ratio improves.
実施例
第１図は本発明の一実施例の充電変換装置１０の平面図
であり、第２図は第１図の切断面線■−■から見た断面
図であり、Ｐｔ５３図はｆｊＳ１図の切断面線■−■か
ら見た断面図である。充電変換装置１０は、複数の光電
変換素子１１ａ、１１１＋・・べ総称する場合は参照符
１１をイ・ｊす）が配列して構成される。光電変換素子
１１は、ステンレスなどがら戊る金属基板１２と、絶縁
性の合成樹脂材料から成る絶縁層１３と、金属などの導
電性材料から成る下部？ｌ極１４と、θ−８；などがら
成る光電変換層１５と、酸化錫などから成る透明電極１
６とが順次８を層されて構成され、前記金属基板１２と
絶縁層１３とは連続的に帯状に形成されている。このよ
うな構成を有する光電変換素子１１は、第２図お上Ｖ第
３図における上方側から尤が入射すると、充電変換層１
５が有する充電変換効果によって下部電極１４と透明電
極１６との間に光起電力が発生する。しかしその電圧は
、通常使用される電圧よりも極めて低いので、このよう
な光電変換素子１１は直列接続されて使用される。Embodiment FIG. 1 is a plan view of a charging conversion device 10 according to an embodiment of the present invention, FIG. 2 is a sectional view taken from the section line ■-■ in FIG. 1, and Pt53 is a fjS1 diagram. FIG. The charging conversion device 10 is configured by arranging a plurality of photoelectric conversion elements 11a, 111+, . The photoelectric conversion element 11 includes a metal substrate 12 made of stainless steel or the like, an insulating layer 13 made of an insulating synthetic resin material, and a lower part made of a conductive material such as metal. A photoelectric conversion layer 15 consisting of an l pole 14, θ-8, etc., and a transparent electrode 1 consisting of tin oxide or the like.
6 and 8 are successively layered, and the metal substrate 12 and the insulating layer 13 are continuously formed in a band shape. In the photoelectric conversion element 11 having such a configuration, when energy is incident from the upper side in FIG. 2 and FIG.
A photovoltaic force is generated between the lower electrode 14 and the transparent electrode 16 due to the charge conversion effect of the transparent electrode 5 . However, since the voltage is much lower than the voltage normally used, such photoelectric conversion elements 11 are used in series connection.
本発明の注目すべき点は、上述したような光電変換索子
１１をそれぞれ直列接続するに際して、それぞれの接続
部１７を、各光電変換素子１１の配列方向に沿う一方の
側面１８ａ、１８ｂ・・・と他方の側面１９ａ、１９ｂ
との間に設けたことである。前記接続部１７は絶縁Ｍ２
０と接続７！１２１とから成る。The noteworthy point of the present invention is that when the photoelectric conversion elements 11 as described above are connected in series, each connecting portion 17 is connected to one side surface 18a, 18b, . . . along the arrangement direction of each photoelectric conversion element 11.・and the other side 19a, 19b
This was established between the two parties. The connection part 17 is insulated M2
0 and connection 7!121.
第４図は充電変換層ｒ！１１０の製造工程を説明するた
めの図である。第４図を参照して、充電変換Ｖｃ置１０
の製造方法について以下に説明する。Figure 4 shows the charging conversion layer r! 110 is a diagram for explaining the manufacturing process of 110. FIG. Referring to FIG. 4, charging conversion Vc position 10
The manufacturing method will be explained below.
先ずｆ５４図（１ａ）およびｆｆ１４図（１ｂ）で示す
ように帯状に形成された金属基板１２の一力側表面全面
に亘って、いわゆるポリイミドと称される絶縁性の合成
υイ脂材料から成る絶縁Ｎ１３を貼′Ｘ１釘る。First, as shown in Fig. 54 (1a) and Fig. 14 (1b), the entire surface of one side of the metal substrate 12 formed in a band shape is made of an insulating synthetic υ fat material called polyimide. Paste the insulation N13 and nail it.
あるいは、プラス基板、絶縁性の合成用謂材料からなる
可撓性基板等のそれ自体が絶縁性の基板を用いてもよい
。次に、第４図（２ａ）および第４図（２１））で示す
ように、下ｉ電極１４を形成する。その形成方法として
は、たとえば所望の形状に通過窓が設けられた金属マス
クを載置した後、電極屑を蒸着する方法、あるいは全面
に亘って金属を蒸着してからホトエツチング法あるいは
スクリーン印刷によるレノスト塗布した後エツチングす
る方法などによってエツチング処理を施す方法などがあ
る。Alternatively, an insulating substrate itself, such as a positive substrate or a flexible substrate made of an insulating synthetic material, may be used. Next, as shown in FIG. 4(2a) and FIG. 4(21)), the lower i-electrode 14 is formed. The formation method includes, for example, placing a metal mask with a passage window in the desired shape and then vapor depositing electrode scraps, or vapor depositing metal over the entire surface and then using a photo-etching method or screen printing. There is a method of applying etching treatment, such as a method of coating and then etching.
続いて、第４図（３ａ）および（３ｂ）で示すように、
充電変換層１５としてａ−３ｉをたとえばプラズマ分子
４￥法などによって堆積する。次に第４図（４ａ）およ
び第４図（４ｂ）に示すように、光電変換層１５の一端
部近傍に前述したようなエツチング処理によって、切欠
き２２を形成する。Subsequently, as shown in FIG. 4 (3a) and (3b),
As the charge conversion layer 15, a-3i is deposited by, for example, the plasma molecule 4\ method. Next, as shown in FIGS. 4(4a) and 4(4b), a notch 22 is formed near one end of the photoelectric conversion layer 15 by the etching process described above.
さらに第・を図（５ａ）および第４図（５ｂ）に示すよ
うに透明電極１６を前述しＬ−ようなエンチング処理方
法により形成する。次にたとえば前述のポリイミドがゼ
リー状に軟化したものを所望の形状に印刷した後、それ
を硬化させて、第４図（６ａ）および第４ ＵＡ（６ｂ
）で示ｒように、接続８１７の絶縁皿２０を形成する。Furthermore, as shown in FIGS. 5A and 4B, a transparent electrode 16 is formed by the etching method described above. Next, for example, the above-mentioned polyimide is softened into a jelly-like shape and printed in a desired shape, and then hardened to form the polyimide in FIG. 4 (6a) and 4UA (6b).
), form the insulating plate 20 of the connection 817.
そして、銀の粉粒、硬化剤などがゼリー状に混合された
いわゆる銀ペーストを、重工絶縁８′！＋２０を跨ぐよ
うに塗布した後、それを硬化させて、第４図（７ａ）お
よび第４図（７ｂ）に示ｒように接続／ｆｆ１２１を形
成する。あるいは上述の銀ペーストに代えて、金属を蒸
着させるようにしてもよい。Then, the so-called silver paste, which is a jelly-like mixture of silver powder, hardening agent, etc., is added to Heavy Industries Insulation 8'! After applying it so as to straddle +20, it is cured to form the connection /ff121 as shown in FIGS. 4(7a) and 4(7b). Alternatively, metal may be deposited instead of the silver paste described above.
第５図は簡略化した）し電変換装置１０の製造力法を示
す図である。前述したように連続的に帯状に形成された
−に属仄板１２に予め絶縁層１３が貼着されたものを、
円桂状の送出ローラ２３に巻回し、前述した各層の生成
を行なう製造装置２４を通過させた後、６回ローラ２５
によって巻取り、充電変換装置１０が完成する。このよ
うな製造方法は、一般にロールトウロール方式と称され
る。FIG. 5 is a simplified diagram showing the manufacturing method of the electrical conversion device 10. As mentioned above, the insulating layer 13 is attached in advance to the peripheral plate 12 formed in a continuous band shape.
After being wound around a conical delivery roller 23 and passing through the manufacturing device 24 that generates each layer described above, the roller 25 is wound six times.
By winding it up, the charging conversion device 10 is completed. Such a manufacturing method is generally referred to as a roll-to-roll method.
本実施例においては、充電変換層１５を形成する際に、
従来技術の場合のように、所定の領域だけ堆積するので
はなく、第４図（３ａ）および第４図（３ｂ）から明ら
かなように全域に亘って堆８Ｎ￥せることかできるので
、その製造工程においてマスク部材を用いることがな（
、！ｌ！造する際における生産性が向上ｒる。In this embodiment, when forming the charge conversion layer 15,
As is clear from FIGS. 4(3a) and 4(3b), instead of depositing only in a predetermined area as in the case of the prior art, it is possible to deposit 8N over the entire area. No mask members are used in the manufacturing process (
,! l! Improves productivity when manufacturing.
以」二説明ｌ−たように製造される光電変換装置１０で
は、従来技術の項で説明したような活用されない領域は
極めて伏（なり、したがって光電変換装置１０の総面積
に対する充電変換層１５による有効受光面積の比が増大
する。In the photoelectric conversion device 10 manufactured as described above, the unused area as explained in the prior art section is extremely hidden (therefore, the charge conversion layer 15 has a large area relative to the total area of the photoelectric conversion device 10). The effective light receiving area ratio increases.
効 果
以上のように本発明によれば、複数配列されｊ−光電変
換素子は、その配列）ｊ向に；：）う両端面の内方側に
設けられる接続部によって直列接続されるようにしたの
で、′Ｓ駄な領域が発生することなく、総面積の有効利
用率がアップし、また生産性ら向上し、したがって価格
の低減が可能となる。Effects As described above, according to the present invention, a plurality of arrayed j-photoelectric conversion elements are connected in series by connecting portions provided on the inner side of both end faces of the array. As a result, the effective utilization rate of the total area is increased without creating any useless areas, and productivity is also improved, thereby making it possible to reduce the price.
第１図は本発明の一実施例の光電変換装置１０の平面図
、第２図は第１図の切断面線■−■から見た断面図、第
３図は第１図の切断面線ｌ１ｌ−ＩＩＩｌ’ｌ・ら見た
断面図、第４図は充電変換装置１０の製造工程を説明す
るための図、第５図は光電変換装置１０の製造方法を示
す図、第６図は従来技術の光電変換装置１の平面図、第
７図は第６図の切断面線■−■から見た断面図、第８図
は第６図の切断面線■−■から見た断面図である、
１０・・・充電変換装置、１１，１１ａ、１ ｌｂ・・
・光電変換素子、１２・・・’Ｉｔ属基板基板３・・・
絶縁層、１４・・・下部電極、１５・・・尤？ｌ変換層
、１６・・・辺ｎＢ電極、１７−・・接続部、１８ａｔ
１８ｂ”’、１９ａ、１９ｂ”’側面、２０・・・
絶縁層、２１・・・接続層代理人 弁理士 四教 圭
一部
第１図
第２図
第３図
第４図
第７図
第８図FIG. 1 is a plan view of a photoelectric conversion device 10 according to an embodiment of the present invention, FIG. 2 is a cross-sectional view taken along the cutting plane line ■-■ in FIG. 1, and FIG. 3 is a cross-sectional view taken along the cutting plane line 4 is a diagram for explaining the manufacturing process of the charging conversion device 10, FIG. 5 is a diagram showing the manufacturing method of the photoelectric conversion device 10, and FIG. 6 is a diagram showing the conventional method. A plan view of the photoelectric conversion device 1 according to the technology, FIG. 7 is a cross-sectional view taken from the cutting plane line ■-■ in FIG. 6, and FIG. 8 is a cross-sectional view taken from the cutting plane line ■-■ in FIG. 6. Yes, 10... Charging conversion device, 11, 11a, 1 lb...
・Photoelectric conversion element, 12...'It group substrate substrate 3...
Insulating layer, 14... lower electrode, 15... ? l conversion layer, 16...side nB electrode, 17-... connection part, 18at
18b"', 19a, 19b"'side, 20...
Insulating layer, 21...Connection layer agent Patent attorney Keiichi Shikyo Figure 1 Figure 2 Figure 3 Figure 4 Figure 7 Figure 8
Claims (1)
順次積層されて形成される光電変換素子が複数配列され
、各光電変換素子は接続部を介して直列接続される光電
変換装置において、 前記接続部は光電変換素子の配列方向に沿う両端面の内
方側に設けられていることを特徴とする光電変換装置。[Claims] A plurality of photoelectric conversion elements formed by sequentially laminating a lower electrode layer, a photoelectric conversion layer, and a transparent electrode layer on an insulating substrate are arranged, and each photoelectric conversion element is connected in series through a connection part. A photoelectric conversion device characterized in that the connection portion is provided on the inner side of both end surfaces along the arrangement direction of the photoelectric conversion elements.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61254267A JPS63108781A (en) | 1986-10-25 | 1986-10-25 | Photoelectric conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61254267A JPS63108781A (en) | 1986-10-25 | 1986-10-25 | Photoelectric conversion device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63108781A true JPS63108781A (en) | 1988-05-13 |
Family
ID=17262599
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61254267A Pending JPS63108781A (en) | 1986-10-25 | 1986-10-25 | Photoelectric conversion device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63108781A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010109567A1 (en) * | 2009-03-24 | 2010-09-30 | 富士電機ホールディングス株式会社 | Photoelectric conversion device, solar cell module and method for manufacturing photoelectric conversion device |
| JP2011187555A (en) * | 2010-03-05 | 2011-09-22 | Toyota Motor Corp | Solar cell module |
-
1986
- 1986-10-25 JP JP61254267A patent/JPS63108781A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010109567A1 (en) * | 2009-03-24 | 2010-09-30 | 富士電機ホールディングス株式会社 | Photoelectric conversion device, solar cell module and method for manufacturing photoelectric conversion device |
| JP2011187555A (en) * | 2010-03-05 | 2011-09-22 | Toyota Motor Corp | Solar cell module |
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