JPS6279624A - Plasma processing equipment - Google Patents
Plasma processing equipmentInfo
- Publication number
- JPS6279624A JPS6279624A JP21934185A JP21934185A JPS6279624A JP S6279624 A JPS6279624 A JP S6279624A JP 21934185 A JP21934185 A JP 21934185A JP 21934185 A JP21934185 A JP 21934185A JP S6279624 A JPS6279624 A JP S6279624A
- Authority
- JP
- Japan
- Prior art keywords
- wafers
- processing gas
- wafer
- speed
- flow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、例えば半導体装置の製造に用いるホトレジ
ストを除去するプラズマ処理装置に関するものである、
第２因は例えば特公昭５７−１２２８９号公報に示され
た従来のプラズマ処理装置を示す断面図であり、図（二
おいて、（１１は石英ガラスからなるチャンバー、（２
）は処理ガスを導入する導入口、（３）は上記チャンバ
ー（１１の内部を減圧し、かつ処理ガスを排気する排気
口、（４）及び（５）はチャンバ−（１）内部を放電さ
せるための一対の電極、（６）は上記電極（４）゛（５
１間に高周波電圧を印加させるための高周波電源、（７
）はウェハ、（８）はウェハ（７）を等間隔に配置して
支持するウェハ支持台である。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a plasma processing apparatus for removing photoresist used, for example, in the manufacture of semiconductor devices. FIG. 2 is a sectional view showing the conventional plasma processing apparatus shown in FIG.
) is an inlet for introducing the processing gas, (3) is an exhaust port for reducing the pressure inside the chamber (11) and exhausting the processing gas, (4) and (5) are for discharging the inside of the chamber (1). A pair of electrodes, (6) are for the electrodes (4) and (5).
a high-frequency power supply for applying a high-frequency voltage between 1 (7
) is a wafer, and (8) is a wafer support stand that supports the wafers (7) arranged at equal intervals.
次に動作について説明する。まず、チャンバー（１１内
部にホトレジストが塗布されたウェハ（７）が配置され
たウェハ支持台（８）がそう人される。次にチャンバー
（１１内部を減圧するためＣ二排気口（２）よりチャン
バー（１）内部の空気示排気される。チャンバ−ｆｉｌ
の内部の圧力が設定値に達すると導入口（２）より処理
ガスが導入される。ここで、高周波電源（６）が動作し
て一対の電極＋４１１５１ Ｃ高周波電力が印加され各
電極＋４１１５１間にプラズマが発生する。このプラズ
マによって周知の様に、ホトレジストが灰化されてウェ
ハ（７）表面より除去される。灰化して除去された物質
はそのまま排気口（３）より排気される。Next, the operation will be explained. First, the wafer support stand (8) on which the wafer (7) coated with photoresist is placed is placed inside the chamber (11).Next, the C2 exhaust port (2) is opened to reduce the pressure inside the chamber (11). The air inside the chamber (1) is evacuated.Chamber-fil
When the internal pressure reaches a set value, processing gas is introduced from the inlet (2). Here, the high frequency power supply (6) is operated and high frequency power is applied to the pair of electrodes +41151 to generate plasma between each electrode +41151. As is well known, this plasma ashes the photoresist and removes it from the surface of the wafer (7). The incinerated and removed substances are directly exhausted from the exhaust port (3).
従来のプラズマ処理装置は以上のようにウェハが均一に
配列されているので、導入口付近のウェハと、排気口付
近のウェハと、中央付近のウェハとでＩＬ、ウェハ相互
間を流れる処理ガスの流速が異なり、各ウェハ（二対し
、例えばホトレジストの除去スピードにばらつきが発生
し、場合によっては不良ウェハが生じることがあった。In conventional plasma processing equipment, the wafers are arranged uniformly as described above, so the IL is controlled between the wafers near the inlet, the wafers near the exhaust port, and the wafers near the center, and the processing gas flowing between the wafers is controlled. The different flow rates caused variations in the removal speed of, for example, photoresist between each wafer, and in some cases resulted in defective wafers.
この発明は上記のような問題点を解消するためになされ
たもので、各ウェハ相互間ｆ二均−にガス−を導入でき
、各ウェハに対し、プラズマ処理のばらつきを抑制でき
るプラズマ処理装置を得ることを目的とする。This invention was made in order to solve the above-mentioned problems, and provides a plasma processing apparatus that can uniformly introduce gas between each wafer and suppress variations in plasma processing for each wafer. The purpose is to obtain.
この発明に係るプラズマ処理装置は、処理ガスの流速が
速い範囲のウェハ相互間隔寸法に対し、流速が遅い範囲
のウェハ相互間隔寸法を大なる様にウェハな配置するウ
ェハ支持台を設けたものである。The plasma processing apparatus according to the present invention is provided with a wafer support stand that arranges the wafers so that the distance between the wafers in the range where the flow rate of processing gas is slow is larger than the distance between the wafers in the range where the flow rate of processing gas is fast. be.
し作用〕
この発明におけるプラズマ処理装置は、処理ガスの流速
が速い範囲のウェハ相互間では、処理ガスの流速が抑制
され、処理ガスの流速が遅い範囲のウェハ相互間では、
処理ガスの流速が早められ、それぞれのウェハ相互間の
流速が略均−とナリ、ウェハ表面上のホトレジストの除
去処理速度が均一になる。In the plasma processing apparatus of the present invention, the flow rate of the process gas is suppressed between wafers in a range where the process gas flow rate is high, and between wafers in a range where the process gas flow rate is slow.
The flow rate of the processing gas is increased, the flow rate between each wafer becomes approximately equal, and the removal process rate of the photoresist on the wafer surface becomes uniform.
す、下、この発明の一実施例を図について説明する。第
１図において、（８０）はウェハ（７）を支持するウェ
ハ支持台で、処理ガスの流速が速い範囲Ａ。Below, one embodiment of the present invention will be described with reference to the drawings. In FIG. 1, (80) is a wafer support table that supports the wafer (7), and is in a region A where the processing gas flow rate is high.
Ｃのウェハ相互間隔寸法（二対し、流速が遅い範囲Ｂの
ウェハ相互間隔寸法を大なる様に構成されている。その
他の符号の説明は従来と同様であり説明を省略する。The distance between the wafers in area B (2) is larger than the distance between the wafers in area B where the flow velocity is slow.The explanations of the other symbols are the same as in the prior art and will not be described here.
次に動作（二ついて説明する。チャンバー（１）内にお
いては、ガスの導入口（２）の付近Ａと排気口（：３）
の付近Ｃの範囲を流れる処理ガスの流速は、Ｂ付近を流
れる処理ガスの流速に比べると速い。しかし、ウェハ支
持台（８０）はウェハ（７）の相互間隔が、ＡとＣの付
近では狭く、Ｂの付近では広く構成されているので、Ａ
、０付近のウェハ（７）の相互間を流れる処理ガスの流
速は抑制され、Ｂ付近のウニ／％（７）の相互間を流れ
る処理ガスの流速は促進されるため、ウェハ支持台（８
０）上のそれぞれのウェハ相互間Ｃ：流れる処理ガスの
流速は均一になる。よって、各ウェハ（７）表面上（＝
塗布されたホトレジストの除去処理速度も均一になる。Next, the operation (I will explain it in two parts. In the chamber (1), near the gas inlet (2) A and the exhaust port (:3)
The flow rate of the processing gas flowing in the area near C is faster than the flow rate of the processing gas flowing near B. However, since the wafer support stand (80) is configured such that the distance between the wafers (7) is narrow near A and C and wide near B,
, the flow rate of the processing gas flowing between the wafers (7) near 0 is suppressed, and the flow rate of the processing gas flowing between the wafers (7) near B is accelerated.
0) Between each wafer above C: The flow rate of the flowing processing gas becomes uniform. Therefore, on the surface of each wafer (7) (=
The removal processing speed of the applied photoresist also becomes uniform.
以上のように、この発明によれば処理ガスの流速が速い
範囲のウェハ相互間隔寸法に対し、流速が遅い範囲のウ
ェハ相互間隔寸法を大なる様（：ウエハ支持台を構成し
たので、ウェハ支持台上のそれぞれのウェハ間（＝流れ
る処理ガスの流速は均一となり、例えばそれぞれのウェ
ハ表面上（＝塗布されたホトレジストの除去処理速度も
均一となる効果がある。As described above, according to the present invention, the distance between wafers in the range where the flow rate of the processing gas is high is made larger than the distance between the wafers in the range where the flow rate is high (: since the wafer support is configured, the wafer support This has the effect that the flow rate of the processing gas is uniform between each wafer on the table (= the flow rate of the flowing processing gas is uniform, and the speed of the removal process of the applied photoresist is also uniform on the surface of each wafer, for example).
第１図はこの発明の一実施例を示す断面側面図、第２図
は従来のプラズマ処理装置を示す断面図である。
図中、（１１はチャンバー、（２１は導入口、（３）は
排気口、（４１支び（５）は電極、（６）は高周波電源
、（７］はウェハ、（８０）はウェハ支持台である。
なお、各図中同一符号は同一、又は相当部分な°示す。FIG. 1 is a sectional side view showing an embodiment of the present invention, and FIG. 2 is a sectional view showing a conventional plasma processing apparatus. In the figure, (11 is the chamber, (21 is the inlet, (3) is the exhaust port, (41 support (5) is the electrode, (6) is the high frequency power supply, (7) is the wafer, (80) is the wafer support The same reference numerals in each figure indicate the same or equivalent parts.
Claims (1)
導入口を有するチャンバ、このチャンバ内に互いに対向
して設けられた一対の電極、この電極間に高周波電圧を
印加して一方の電極から他方の電極へ荷電粒子を移動さ
せる高周波電源、及び上記処理ガスの流速が速い範囲の
ウエハ相互間隔寸法に対し、流速が遅い範囲のウエハ相
互間隔寸法を大なる様にウエハを配置するウエハ支持台
を備えたプラズマ処理装置。A chamber that has an exhaust port for exhausting and depressurizing the interior and an inlet for introducing processing gas, a pair of electrodes that are provided opposite each other in this chamber, and a high frequency voltage is applied between these electrodes to a high-frequency power source for moving charged particles to the other electrode; and a wafer support stand for arranging wafers so that the wafer spacing in a slow flow velocity range is larger than the wafer spacing in a fast flow velocity range of the processing gas. Plasma processing equipment equipped with
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21934185A JPS6279624A (en) | 1985-10-02 | 1985-10-02 | Plasma processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21934185A JPS6279624A (en) | 1985-10-02 | 1985-10-02 | Plasma processing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6279624A true JPS6279624A (en) | 1987-04-13 |
Family
ID=16733933
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21934185A Pending JPS6279624A (en) | 1985-10-02 | 1985-10-02 | Plasma processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6279624A (en) |
-
1985
- 1985-10-02 JP JP21934185A patent/JPS6279624A/en active Pending
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