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JPS6277491A - Production of high resistance amorphous nip foil strip of large width - Google Patents

Production of high resistance amorphous nip foil strip of large width

Info

Publication number
JPS6277491A
JPS6277491A JP60217288A JP21728885A JPS6277491A JP S6277491 A JPS6277491 A JP S6277491A JP 60217288 A JP60217288 A JP 60217288A JP 21728885 A JP21728885 A JP 21728885A JP S6277491 A JPS6277491 A JP S6277491A
Authority
JP
Japan
Prior art keywords
nip
foil
substrate
high resistance
phosphorus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60217288A
Other languages
Japanese (ja)
Inventor
Kazuo Kondo
和夫 近藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Sumitomo Metal Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Industries Ltd filed Critical Sumitomo Metal Industries Ltd
Priority to JP60217288A priority Critical patent/JPS6277491A/en
Publication of JPS6277491A publication Critical patent/JPS6277491A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To produce high resistance amorphous NiP foil of a large width by pulse electrolysis by depositing an NiP alloy on a substrate at a specified current density with a specified period of pulsation in a bath prepd. by mixing a Watts bath with an oxy-acid of phosphorus or a salt thereof and by stripping the resulting NiP alloy film. CONSTITUTION:A bath prepd. by mixing a Watts bath with an oxy-acid of phosphorus or a salt thereof such as phosphorous acid, hypophosphorous acid or sodium hypophosphite is used. A pulsating current ip having 0.01-100msec on-time and off-time is supplied at a current density represented by the formula to deposit an NiP alloy on a substrate of an easily passivatable and electrically conductive material. The resulting NiP alloy film is stripped from the substrate. Thus, high resistance amorphous NiP foil of large width is obtd.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、非晶質Nip高抵抗箔帯の製造方法に関し、
さらに詳細には、パルス電解により広巾の非晶質Nip
高抵抗箔を製造する方法に関する。
DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a method for manufacturing an amorphous NIP high resistance foil strip,
More specifically, pulse electrolysis produces a wide amorphous NIP.
The present invention relates to a method of manufacturing high resistance foil.

(従来の技術) 従来、金属箔を電解法で製作する方法としては、鉄箔、
銅箔プリント基板等の製造方法が、特開昭58−737
86号、同58−73787号、同53−37549号
、同57−82488号公報等により開示さnている。
(Conventional technology) Conventionally, methods for producing metal foil by electrolytic method include iron foil,
A manufacturing method for copper foil printed circuit boards, etc. was published in Japanese Patent Application Laid-Open No. 58-737.
No. 86, No. 58-73787, No. 53-37549, No. 57-82488, etc.

一方、Nipの非晶質合金を製作する方法としては、急
冷凝固法によるものが知らnている〇また、電解法(メ
ッキ、無電解メッキ法)によりリンを多く含有するNi
p析出膜を形成し、その高抵抗性を利用してパワートラ
ンジスタ等の回路安定保護に用いようとする試みは、た
とえばrPlating  and  5urface
  Finishing。
On the other hand, a known method for producing NIP amorphous alloys is the rapid solidification method.In addition, Ni containing a large amount of phosphorus is produced by electrolytic methods (plating, electroless plating).
Attempts to form a p-precipitated film and utilize its high resistance to stabilize and protect circuits such as power transistors include, for example, rPlating and 5surface.
Finishing.

立9.72(1982)Jに提案さnている。It was proposed in 9.72 (1982) J.

(発明が解決しようとする問題点) しかしながら、電鋳法により金属箔を製作する方法は、
こatで、その適用範囲は結晶質構造の金属に限ら几て
おり、箔内体の特性が少なく、利用範囲も限らnたもの
であった。
(Problems to be solved by the invention) However, the method of producing metal foil by electroforming is
However, the scope of its application was limited to metals with a crystalline structure, and the characteristics of the inner foil were limited, so the range of use was also limited.

また、急冷凝固法でNipの非晶質合金を製作する方法
は、せいぜい50朋中程度のものしか作ることができず
、広巾材の製作に適さないという問題がある。したがっ
て、この方法により製作さnfC金属箔は、低融点性を
利用してロウ付は箔としてのみ利用さnているに過ぎな
い。
In addition, the method of manufacturing an amorphous NIP alloy using the rapid solidification method has the problem that it is only possible to manufacture an amorphous alloy of about 50 mm at most, and it is not suitable for manufacturing wide materials. Therefore, the nfC metal foil produced by this method is only used as a foil after brazing, taking advantage of its low melting point.

さらに、上記の電解法または無電解メッキ法でNip合
金を製作する方法は、Nip合金を基板上に析出する技
術に限らnており、析出膜を単離して金属箔を製作する
ものではなかった。
Furthermore, the above-mentioned method of producing NIP alloy by electrolytic method or electroless plating method is limited to the technique of depositing NIP alloy on a substrate, and does not involve isolating the deposited film to produce metal foil. .

そこで、本発明の目的は、平板または凹凸等所望の平面
形状を有し、任意面積かつ任意厚の、高抵抗性、高耐食
性、低融点性を有する非晶質Nip箔の製造方法を提供
することにある。
Therefore, an object of the present invention is to provide a method for producing an amorphous NIP foil having a desired planar shape such as a flat plate or unevenness, an arbitrary area and an arbitrary thickness, and having high resistance, high corrosion resistance, and low melting point. There is a particular thing.

(問題点を解決するための手段) 上記問題点を解決するために、本発明は、ワット浴にリ
ン共析剤としてリンの酸素酸または酸素酸塩を混合した
浴組成を用い、0.01〜100m secのオンタイ
ム、オフタイム長さを有するパルス電流ipを10 <
 i p < 30 OA/dゴの電流密度で印加して
、易不働態化性および導電性を有する材料から成る基板
上にNip合金を析出せしめ、ついで基板からNip合
金皮膜を剥離することを特徴とするものである。
(Means for Solving the Problems) In order to solve the above problems, the present invention uses a bath composition in which a phosphorus oxyacid or oxyacid salt is mixed as a phosphorus eutectoid in a Watts bath, Pulsed current ip with on-time and off-time lengths of ~100 m sec <10
A current density of i p < 30 OA/d is applied to deposit the Nip alloy on a substrate made of a material that is easily passivable and conductive, and then the Nip alloy film is peeled off from the substrate. That is.

ワット浴(硫酸ニッケル2401/11.塩化二y ケ
ル451/1. ホウre3og/1)vc添加さnる
リンの酸素酸または酸素酸塩としては、亜リン酸、次亜
リン酸、次亜リン酸ナトリウム、リン酸等を挙げること
ができる。
Watt bath (nickel sulfate 2401/11. dichloride chloride 451/1. phosphorous re3og/1). Examples include sodium acid, phosphoric acid, and the like.

本発明において、パルス周期をo、ol〜100771
secとしたのは、1oOTrLsecを超えるパルス
周期では濃度境界層の回復効果が不完全なため、リンが
被膜中に析出せず、通常の結晶質Niメ、キと同様にな
るからである。また、パルス周期が0.01 @ Be
e未清の場合には、電気二重層と電極間との容量効果の
ため、適正なパルス波形を印加することが事実上不可能
となるからである〇 電流密度については、直流低電流密度(1p(sA/d
mりではリンは入り易いが、高速析出を行なうことがで
きない0パルス電流印加時、デユーティサイクルT o
n/(T、on+T 6ff ) (第2  図)にも
依るが、lO< ip < 30 OA/dゴの電流密
度範囲でリンが析出し、非晶質構造が得らnる〇 本発明に使用さnる基板は、ステンレス、チタン等の不
働態化し易い導電性材料のものが選ばnる0基板表面を
平板状あるいは凹凸状等とすることにより、そnに対応
した平板状、凹凸状等の表面形状を有するN19合金箔
を得ることができる。合金箔の膜厚は電鋳時間等を選ぶ
ことにより自由に制御することができる。また、本発明
によnば、製造可能な箔面績に特に限定はなく、任意面
積とすることができる〇本発明方法では、上記のような
特定の条件の下で、第1図に概念的に示す装置を用いて
、通常の電解法により基板上に非晶質Nip合金が析出
せしめらnる0第1図において、lは電解セルを示し、
中には上記したようにワット浴にリンの酸素酸または酸
素酸塩を混合した組成の浴2が満たさnている。浴2中
には、陽極3と、遼奨棲基板4の陰極とが浸漬さ′nる
05はパルス発生器、6は電極への印加電流波形を見る
ためのオシロスコープである。
In the present invention, the pulse period is o, ol~100771
sec because the recovery effect of the concentration boundary layer is incomplete at a pulse period exceeding 10OTrLsec, so phosphorus does not precipitate into the film and becomes similar to normal crystalline Ni metal. Also, the pulse period is 0.01 @ Be
e If the liquid is not purified, it becomes virtually impossible to apply an appropriate pulse waveform due to the capacitance effect between the electric double layer and the electrodes. 1p(sA/d
Phosphorus easily enters in the molten metal, but high-speed deposition cannot be performed.When applying zero pulse current, the duty cycle T o
Although it depends on n/(T, on+T6ff) (Fig. 2), phosphorus precipitates in the current density range of lO < ip < 30 OA/d and an amorphous structure is obtained. The substrate to be used is selected from conductive materials that are easily passivated, such as stainless steel or titanium. It is possible to obtain an N19 alloy foil having a surface shape such as the following. The film thickness of the alloy foil can be freely controlled by selecting the electroforming time and the like. In addition, according to the present invention, there is no particular limitation on the surface area of the foil that can be produced, and it can be made to any area. In the method of the present invention, under the above-mentioned specific conditions, the foil surface area that can be manufactured is as shown in FIG. An amorphous NIP alloy was deposited on a substrate by a conventional electrolytic method using the apparatus shown in Figure 1, where l indicates an electrolytic cell;
The inside is filled with a bath 2 having a composition of a Watts bath mixed with a phosphorus oxyacid or oxyacid salt, as described above. In the bath 2, an anode 3 and a cathode of a substrate 4 are immersed. 05 is a pulse generator, and 6 is an oscilloscope for viewing the current waveform applied to the electrodes.

基板4上に析出した非晶質812合金被膜を基板4から
剥離することにより、所望表面形状を有し、所望O膜厚
および面積の金属箔が得らnる0得らt″Lfc金属箔
はN1−P状態図の共晶組織近傍にあり、非晶質として
の性質、すなわち、高抵抗性、高耐食性および低融点性
を有する。
By peeling the amorphous 812 alloy film deposited on the substrate 4 from the substrate 4, a metal foil having a desired surface shape, desired O film thickness and area can be obtained. is located near the eutectic structure in the N1-P phase diagram and has amorphous properties, that is, high resistance, high corrosion resistance, and low melting point.

基板4からの剥離は、たとえばステ/レス、チタン等異
不働態化材料を用いそnを酸化性の酸で不働態化処理す
ることにより行なわnる。
The separation from the substrate 4 is carried out by using a different passivating material such as stainless steel or titanium, and passivating the material with an oxidizing acid.

基板4からの剥離を容易にするために・基板4上に剥離
層を設けてもよい。
In order to facilitate separation from the substrate 4, a release layer may be provided on the substrate 4.

(作用) ワット浴にリンの酸素酸または酸素酸塩を混合した浴を
用い、0.01 <’r On 、 T off<10
07Fl secおよびI O< ip< 300A/
dm’の電析条件により電鋳を行なった場合のリンの共
析量と電析条件との関係を第3図および第1表に示す〇
一般にリンの入り方は低デユーティサイクルで比較的低
いip領領域おいて大となる。リンが共晶組成(19A
t%)近傍まで入ると非晶質化する。
(Function) Using a Watts bath mixed with phosphorous oxyacid or oxyacid, 0.01 <'r On , T off < 10
07Fl sec and IO<ip<300A/
Figure 3 and Table 1 show the relationship between the eutectoid amount of phosphorus and the electrodeposition conditions when electroforming is performed under the electrodeposition conditions of It becomes large in low IP area. Phosphorus has a eutectic composition (19A
t%), it becomes amorphous.

第  1  表 以上の実験条件でリンが共晶点以上入り、非晶質化した
電析Nip被膜を不働態化し易いステンレス(たとえば
SUS 304BA仕上げ)に析出させ単離した金属箔
の物性を以下に示す0(1)抵抗物性、四点探針法を用
いて金属箔の抵抗を測定した。抵抗測定はデジタルmΩ
計(分解能0.01 mΩ)を用いたOP共析量により
箔の抵抗値が上昇し、共晶点近傍まで入nは急冷法で製
作し1NiP非晶質箔と同程度の抵抗値となる。第4図
は車中すンチと抵抗値との関係を示す〇 (2)耐食物性電析箔として製作した純ニッケル箔およ
び、共晶組成までリンが共析したNiP非晶質箔の0.
8N硫酸溶液中での分極曲線を測定した。陰分極ターフ
エル傾勾はそnぞflO,13v/、0.06v/ で
あυ、水素発生の交換電流密度は共析物の方が小さい。
Table 1 Under the experimental conditions shown in Table 1, phosphorus enters above the eutectic point and the amorphous electrodeposited NIP film is deposited on stainless steel (for example, SUS 304BA finish), which is easy to passivate.The physical properties of the isolated metal foil are as follows. The resistance of the metal foil was measured using the four-point probe method using the 0(1) resistance physical property shown in FIG. Resistance measurement is digital mΩ
The resistance value of the foil increases depending on the amount of OP eutectoid using a meter (resolution 0.01 mΩ), and when it reaches near the eutectic point, the resistance value is comparable to that of 1NiP amorphous foil produced by the rapid cooling method. . Figure 4 shows the relationship between the internal resistance and the resistance value.〇(2) Pure nickel foil manufactured as corrosion-resistant electrodeposited foil and NiP amorphous foil with phosphorus eutectoid up to the eutectic composition. ..
Polarization curves in 8N sulfuric acid solution were measured. The cathodic polarization Terfel gradient is flO, 13v/, 0.06v/, respectively, and the exchange current density for hydrogen generation is smaller for the eutectoid.

又陽分極の溶解電流もリンが共析する事により減少し、
耐食性に秀nている事がわかる。第5図に純ニッケル箔
およびNiP共品共析物O分極曲線を示す。
In addition, the dissolution current of anodic polarization also decreases due to the eutectoid of phosphorus,
It can be seen that it has excellent corrosion resistance. FIG. 5 shows O polarization curves for pure nickel foil and NiP eutectoid.

(実施例) つぎに、本発明の効果を実施例により説明する0 (実施例1) 第6図に示すような装置を用いて1〜6m巾のNiP合
金箔を本発明方法に従って製作した〇この装置は電鋳鋼
箔を製造するために使用されるものと同様のもので、ス
テンレスおよびチタン材のドラム5を陰極材とした。8
はドラム5から剥離さnて引き出さnるNiP合金箔に
付着している電解液を洗浄するための水洗スプレ、9は
水洗タンク、lOはドライヤである。得ら:AfcNi
P合金箔中のP合金車中よび抵抗値を第2表に示す。
(Example) Next, the effects of the present invention will be explained by examples.0 (Example 1) NiP alloy foil with a width of 1 to 6 m was manufactured according to the method of the present invention using the apparatus shown in Fig. 6. This device was similar to that used for manufacturing electroformed steel foil, and the drum 5 made of stainless steel and titanium was used as the cathode material. 8
9 is a water washing spray for cleaning the electrolytic solution adhering to the NiP alloy foil peeled off from the drum 5 and pulled out, 9 is a water washing tank, and 1O is a dryer. Obtained: AfcNi
Table 2 shows the P alloy wheels and resistance values in the P alloy foil.

(実施例2) 第7図に示すような単板の凹凸形状を有する陰極5を用
い、バッチ方式により表面に凹凸形状を有するN i 
P合金箔を製造した。得らf′した合金箔中のP含有率
および抵抗値を第2表に併せて示す。
(Example 2) Using a single plate cathode 5 having an uneven shape as shown in FIG.
A P alloy foil was manufactured. The P content and resistance value of the obtained alloy foil f' are also shown in Table 2.

第  2  表 ○:端面部割nのない良好な広巾材 △:端面部割n少しあり ×:端面+中央部に割nあり 第2表に示すように、実施例1、実施例2ともに、良好
な広巾材を製造することができ、十分な性能を得ること
ができた。
Table 2 ○: Good wide material with no split n on the end face △: Slight split n on the end face ×: Split n on the end face + center part As shown in Table 2, both Example 1 and Example 2: It was possible to produce a good wide material and obtain sufficient performance.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明法に使用さnる電解装置の概念図、第2
図はパルス周期と電流密度とを示す図、第3図はipと
P共析量との関係を示す図、第4図は車中P%と抵抗値
との関係を示す図、第5図は分極曲線を示す図、第6図
および第7図は実施例に使用した電鋳装置を示す図であ
る01・・電解セル  2・・電解液  3・・陽極4
・・陰極(基板)  5・・パルス発生器6−・オシロ
スコープ P(%) P含有量(At%) 電(fl (V、S、5CE) 第6図 第7図
Figure 1 is a conceptual diagram of the electrolyzer used in the method of the present invention, Figure 2
The figure shows the pulse period and current density, Figure 3 shows the relationship between ip and the amount of P eutectoid, Figure 4 shows the relationship between in-vehicle P% and resistance value, and Figure 5 6 and 7 are diagrams showing the electroforming equipment used in the examples.01... Electrolytic cell 2... Electrolyte solution 3... Anode 4
...Cathode (substrate) 5..Pulse generator 6-.Oscilloscope P (%) P content (At%) Electricity (fl (V, S, 5CE) Fig. 6 Fig. 7

Claims (1)

【特許請求の範囲】[Claims] (1)ワット浴にリンの酸素酸または酸素酸塩を混合し
た組成の浴を用い、0.01〜100m secのオン
タイム、オフタイムを有するパルス電流ipを10<i
p<300A/dm^3の電流密度で印加して、易不働
態化性および導電性を有する材料から成る基板上にNi
p合金を析出せしめ、ついで基板からNip合金皮膜を
剥離することを特徴とする非晶質Nip広巾高抵抗箔帯
の製造方法。
(1) Using a Watts bath with a composition of phosphorus oxyacid or oxyacid salt, pulse current ip with on-time and off-time of 0.01 to 100 msec is applied to 10<i
Applying a current density of p<300 A/dm^3, Ni
A method for producing an amorphous NIP wide high resistance foil strip, which comprises depositing a P alloy and then peeling off a NIP alloy film from a substrate.
JP60217288A 1985-09-30 1985-09-30 Production of high resistance amorphous nip foil strip of large width Pending JPS6277491A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60217288A JPS6277491A (en) 1985-09-30 1985-09-30 Production of high resistance amorphous nip foil strip of large width

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60217288A JPS6277491A (en) 1985-09-30 1985-09-30 Production of high resistance amorphous nip foil strip of large width

Publications (1)

Publication Number Publication Date
JPS6277491A true JPS6277491A (en) 1987-04-09

Family

ID=16701786

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60217288A Pending JPS6277491A (en) 1985-09-30 1985-09-30 Production of high resistance amorphous nip foil strip of large width

Country Status (1)

Country Link
JP (1) JPS6277491A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01247590A (en) * 1988-03-30 1989-10-03 Mitsubishi Rayon Co Ltd Amorphous alloy

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01247590A (en) * 1988-03-30 1989-10-03 Mitsubishi Rayon Co Ltd Amorphous alloy

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