[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

JPS6255943A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS6255943A
JPS6255943A JP60196326A JP19632685A JPS6255943A JP S6255943 A JPS6255943 A JP S6255943A JP 60196326 A JP60196326 A JP 60196326A JP 19632685 A JP19632685 A JP 19632685A JP S6255943 A JPS6255943 A JP S6255943A
Authority
JP
Japan
Prior art keywords
jar
bell
wire
aluminum
pressure air
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60196326A
Other languages
English (en)
Other versions
JPH058862B2 (ja
Inventor
Kenichi Tateno
立野　健一
Toshiaki Murota
室田　敏明
Nobuaki Yoshitake
信昭 吉武
Toshio Kawasaki
川崎　敏夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP60196326A priority Critical patent/JPS6255943A/ja
Publication of JPS6255943A publication Critical patent/JPS6255943A/ja
Publication of JPH058862B2 publication Critical patent/JPH058862B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H01L2224/78314—Shape
    • H01L2224/78317—Shape of other portions
    • H01L2224/78318—Shape of other portions inside the capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85053—Bonding environment
    • H01L2224/8509—Vacuum
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 ３、ブを明の訂細イＴ説明 産業上の利用分野 木梵明は″ｒ邊棒体装置製造ジノ法に閉覆るしので・あ
る。
従来の技術 アルミ線を用いて半々体系了と外部導出線を結線する超
音波ワイヤーボンティングは第２図に承りように、超音
波ｙｈ振器１から伸ひたシＸ・）１〜２の先フ・：＾；
にビス３によってつ１ツｆ４が取りイ・］（）られる。
ウウエフアの先端にはアルミ細線５を通ザ細孔６と、ア
ルミ細線５を押え超音波接着させる細溝７が形成されて
４３す、半導体支持基板８に接着剤９で接着された半導
体素子１０上の電極アルミパターン１１上にアルミ細Ｆ
Ａ５が超音波接着される。
次いでウエフア４が上背し、アルミ細線５をＩｆ　ｊＬ
６で捕捉しつつ矢印の方向へ移動し、外部導出線１２上
で加工し、超音波接着すると同時にウェッブ−４の先端
でアルミ細線５を切断し、ワイヤーボンドを完了する。
かかるワイヤーボンディング装置において、ウエフア４
の材質は硬い川砂合金又はステンレス鋼が用いられ、一
方アルミ細線５は軟材であるため、ボンディング動作中
にウエフアの細孔６又はａ溝７でアルミＩｌｌ線５の表
面が摩擦研削され、微細なアルミくずが発生し、半々体
索了表面に付着する。このアルミくずはＩ２原にＪ、っ
て静電気を持つため、ワイヤーボンディング装置中での
移送駆動程度では除去されず、半々体系子人面に形成さ
れた電極間にアルミくずが残った揚台、短゛絡故陣の原
因となり、品質上重大な欠陥となる。
斯かる不都合を排すため、通常ワイヤーポンド終了後に
高圧エアーによるブロー装置によりアルミくｆを除去し
たり、軟かいはけによって表面が払われたつづる工夫が
行なわれていた。
発明が解決しようとする問題点 このような従来の構成に４３いて、ブロー装置によりア
ルミくずを除去する場合、比較的大きなアルミくザは除
去されるものの、極めて微細で月つ静電気を帯びて半導
体素子に付着しているアルミくずは除去されにくい。又
、はけ等で表面を払う場合でもアルミ配線があるため、
充分な動作をさＵにくく完全除去は困難である。
本発明はこのような問題点を解決するもので、静電付着
した微１１１１なアルミくずをも強制的に除去できるよ
うにすることを目的とづ−るものて゛ある。
問題点を解決するための手段 このような問題点を解決するために本発明は、゛ｒ導体
素子の電極パッドと半導体装置の外部導出線を超音波ワ
イヤーボンディング装置を用いて金属製、腺によって結
線ヅる際に、金Ｂ細線とウエッヂとの摺動により発生づ
−る金属くずを、高圧エヤーを吹き付けると同時に真空
吸引することによって除去するものである。
作用 この構成により、高圧エアーの吹きイ４けと真空吸引と
によってｒ！１ａな金属くずをし強ＩＩ、ＩＩ的に吸引
除去することができる。
実施例 以下、本発明の一実施例について、図面（第１図）に基
づいて説明する。
図において、先ずワイヤーボンディングが完了した半導
体組立構体をベルジｐ−２１で覆い、ベルジｔ−２１の
コーナ一部よりａ管２２を導入しベルジｔ−２１内に高
圧エアー２３を吹き込む。一方ベルジセー２１の中央上
部に真空吸引用の管２４を導入しペルジャー２１内の空
気を真空吸引する。ペルジャー２１の形状は半導体支持
基板２５と外部導出線２６の形状及び、アルミＩｔ線２
７のホンディング形状に併せて形成するとともに、高圧
エアー用の細管２２の取り付ｃノ箇所は、ベルジ１７−
２１内で最も渦流ができやすい位置に決定される。この
際、高圧エヤー用のａ　ｅ　２２及び真空吸引用管２４
は複数個形成しても差し支えない。２８は半導体素子で
ある。
発明の効果 以上のように本発明によれば、高圧エアーの吹き付けに
よる効果は狭い空所内で非常に高まり、半導体素子上に
静電付着したり、金属細線がボンディングされている複
雑な隙間に入り込んでいる金属くずは渦流によって谷き
上げられると同時に真空吸引される。その結宋、半導体
素子上の電極間の短絡は完全に除去され、安定した品質
性能を備えた半導体素子がｊ７られる。。
【図面の簡単な説明】
第１図は本発明の一実施例を示す所面図、第２図は従来
のアルミｌ１ｌｌＩ線の超音波ボンティング方法を示す
概略図である。 ２１・・・ペルジャー、２２・・・細管、２３・・・高
圧エアー、２４・・・真空吸引用の７１・、２５・・・
半導体支持基板、２６・・・外部導出線、２７・・・ア
ルミ細線、２８・・・半々体素子代理人　　　森　　本
　　義　　弘 第１図 乃２１ 第２図 フ

Claims (1)

    【特許請求の範囲】
  1. １、半導体素子の電極パッドと半導体装置の外部導出線
    を超音波ワイヤーボンディング装置を用いて金属細線に
    よつて結線する際に、金属細線と、ウエッヂとの摺動に
    より発生する金属くずを、高圧エヤーを吹き付けると同
    時に真空吸引することによつて除去する半導体装置の製
    造方法。
JP60196326A 1985-09-05 1985-09-05 半導体装置の製造方法 Granted JPS6255943A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60196326A JPS6255943A (ja) 1985-09-05 1985-09-05 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60196326A JPS6255943A (ja) 1985-09-05 1985-09-05 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6255943A true JPS6255943A (ja) 1987-03-11
JPH058862B2 JPH058862B2 (ja) 1993-02-03

Family

ID=16355958

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60196326A Granted JPS6255943A (ja) 1985-09-05 1985-09-05 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6255943A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016018993A (ja) * 2014-07-04 2016-02-01 アーベーベー・テクノロジー・アーゲー 半導体モジュールおよび半導体モジュールの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016018993A (ja) * 2014-07-04 2016-02-01 アーベーベー・テクノロジー・アーゲー 半導体モジュールおよび半導体モジュールの製造方法

Also Published As

Publication number Publication date
JPH058862B2 (ja) 1993-02-03

Similar Documents

Publication Publication Date Title
TWI269391B (en) Initial ball forming method of wire bonding lead and wire bonding apparatus
JPS6255943A (ja) 半導体装置の製造方法
JP3096467B2 (ja) 静電チヤツク電極装置
JPH0250419A (ja) プラズマｃｖｄ成膜装置
JPH02277251A (ja) ワイヤボンディング方法および装置
JP2820275B2 (ja) 洗浄装置
JPH0945814A (ja) 半導体装置
JP3146634B2 (ja) 半導体装置のワイヤボンディング装置及び半導体装置の製造方法
JPH03230556A (ja) 半導体装置用リードフレーム
JPH04154133A (ja) ボンディングワイヤの短絡防止方法
JPH08330308A (ja) バンプの形成方法
JPH01253238A (ja) プラズマ処理装置
WO2001013431A1 (en) Apparatuses for forming wire bonds from circuitry on a substrate to a semiconductor chip, and methods of forming semiconductor chip assemblies
JPH0513658A (ja) 半導体装置用リードフレーム
JPH03201449A (ja) ワイヤボンディング装置のスパーク発生回路
JPH01129429A (ja) ワイヤボンデイング装置用キヤピラリ
JPH01196855A (ja) 半導体装置
JPH03187227A (ja) 半導体装置
KR20170056076A (ko) 와이어 본더의 캐필러리 클리닝 방법
JPH0498861A (ja) 樹脂封止型半導体装置
JPH0621160A (ja) ターミナルテープの打ち抜き方法及びその打ち抜き金型
JPS6188537A (ja) 半導体装置のリ−ド
JPH0265154A (ja) 半導体装置
JPH05226399A (ja) 半導体配線方法
JPH01149431A (ja) ボンディング装置