JPS6249975B2 - - Google Patents

Description

[Detailed description of the invention]

This invention relates to a composition for a grain-boundary insulated semiconductor ceramic capacitor. Conventionally, small-sized, large-capacity capacitors include barrier layer capacitance type semiconductor ceramic capacitors, surface insulation layer type semiconductor ceramic capacitors, and grain boundary insulation type semiconductor ceramic capacitors. Standard electrical characteristics of these various semiconductor ceramic capacitors are shown in Table 1.

[Table] The electrical properties in Table 1 are values measured under the following conditions. Capacitance (Cs), dielectric loss (tanδ): Values measured at a temperature of 20°C, a frequency of 1KHz, and a voltage of 0.2Vrms or less. Insulation resistance (IR): At a temperature of 20°C, a DC voltage of 10V was applied per mm of sample thickness.
This is the value after 30 seconds. Capacitance temperature characteristic (△TC): Value indicating the maximum capacitance change rate in the temperature range of -25°C to +85°C, with +20°C as the standard. Capacitance change rate (DCB): At a temperature of 20°C, the capacitance when applying a DC voltage of 0.2v is compared to the capacitance when a DC voltage of 10v is applied.
The value expressed as a percentage of the change in capacitance when . Distortion rate: A value showing the total harmonic distortion rate at a temperature of 20°C, a frequency of 1KHz, and an applied voltage of 1V. Frequency characteristics (E, S, R,): Values around 1MHz. As is clear from Table 1, the weir layer type semiconductor ceramic capacitor has a capacitance (Cs) of 400 to 500 nF/cm ²
(apparent dielectric constant around 200,000), but tan δ was large and IR only showed a small value. In addition, surface insulating layer type semiconductor ceramic capacitors are
Good characteristics such as tan δ, △TC, DCB, and distortion rate could not be obtained. Further, although grain boundary insulated semiconductor ceramic capacitors exhibit almost superior electrical characteristics to surface insulated layer type semiconductor ceramic capacitors, their capacitance is at most 300 nF/cm ² . Therefore, the present invention relates to a composition for a grain-boundary insulated semiconductor ceramic capacitor among the various capacitors described above, which has good electrical properties and particularly has a capacitance of 450 to 550 nF/cm ² . The object of the present invention is to provide a composition from which a capacitor exhibiting a very large value of . The composition constituting the grain boundary insulated semiconductor porcelain is
(Sr _1-x Ba _x ) TiO ₃ (x = 0.30 to 0.50) or (Sr _1-x Ba _x ) TiO ₃ (x = 0.30 to 0.50), with titanate and zirconate as the main component. This is the main component, and rare earth elements such as La and Y, Nb, Ta, and W are added as semiconductor agents. In addition, at least one of SiO ₂ and Al ₂ O ₃ may be contained if necessary. Among the above, x of (Sr _1-x Ba _x )TiO ₃ is 0.30 ~
A range of 0.50 is preferred. The reason for limiting it to this range is that when x becomes less than 0.30, Cs decreases and △TC worsens, and when x exceeds 0.50, Cs decreases, tanδ increases, and ΔTC worsens. . In addition, when (Sr _1-x B _x )TiO ₃ contains at least one of other titanates such as CaTiO ₃ and zirconates such as BaZrO ₃ , the amount to be contained is 10 mol%. The following are appropriate.
This is because if the content exceeds 10 mol%, the effects of its inclusion, such as improvement in sinterability and reproducibility of electrical properties, cannot be expected. Furthermore, the content range of the semiconducting agent is 0.1
~1.0 mol% is preferred. Outside this range, even if fired in a neutral or reducing atmosphere, ^the
Semiconductor porcelain with a sufficient value of about 10 ^-1 Ω·cm cannot be obtained. Furthermore, when at least one of SiO ₂ and Al ₂ O ₃ is contained, the firing temperature can be lowered,
Dielectric breakdown can also be increased. Of these, SiO ₂
The content range is preferably 0.05 to 0.5 mol%. This is because when SiO ₂ is less than 0.05 mol %, the firing temperature becomes high, and when it exceeds 0.5 mol %, the dielectric constant decreases. Also, the content range of Al ₂ O ₃ is 0.02~
0.2 mol% is preferred. If it is less than 0.02 mol%, dielectric breakdown will not increase, and if it exceeds 0.2 mol%, a decrease in dielectric constant will be observed. To make the grain boundaries of semiconductor porcelain into insulators,
A method is adopted in which a compound such as a metal or oxide consisting of Cu and at least one of Bi, Pb, B, and Si is diffused into the grain boundaries by heat treatment. A decrease in IR is seen for combinations other than these. Furthermore, if such a combination is satisfied,
Other metals or compounds may also be used. The insulator treatment can be performed by applying it to the semiconductor ceramic surface using a technique such as vapor deposition and then heat-treating it, or by applying a metal oxide paste and heat-treating it. This semiconductor porcelain composition is produced by mixing raw materials in a predetermined ratio, molding it into a certain shape, and then firing it in a neutral or reducing atmosphere. A value of 100μ or more shows favorable results in terms of electrical properties. If 100
If it is less than μ, Cs, ΔTC, and DCB will decrease. In order to make the maximum crystal grain size 100μ or more, for example, adjusting the proportion of x in (Sr _1-x Ba _x )TiO ₃ , adjusting the composition ratio such as adjusting the content of the semiconducting agent, and sintering. Control based on conditions, etc.
Further, the maximum value of the maximum crystal grain size is limited to 250μ. This is because if it exceeds 250μ, the electrical characteristics will deteriorate and it will be an obstacle to making the ceramic plate thinner to obtain a large capacitance. Semiconductor porcelain is allowed to contain unavoidable impurities to the extent that they do not affect its properties, but other mineralizing agents such as Al ₂ O ₃ and SiO ₂ as well as TiO ₂ , ZnO, and Bi Inclusion of ₂ O ₃ , CuO, etc. brings about sinterability, that is, the ability to obtain dense porcelain even if the firing temperature is lowered, and improves reproducibility and
In other words, the effect is that even if the materials are fired at the same temperature, there will be no variation in characteristics. Although the range in which it is contained cannot be clearly defined, it may be contained in a small amount in order to improve properties. Hereinafter, this invention will be explained in detail according to examples. Example Main materials such as SrCO ₃ , BaCO ₃ , TiO _{2 ,} CaTiO 3 , BaZrO ₃ , Y ₂ O ₃ , La ₂ O ₃ , WO ₃ etc. were used to obtain semiconductor porcelain having the composition ratio shown in Table 2. Weigh the semiconducting agent, mineralizing agent such as SiO ₂ , Al ₂ O ₃ , TiO ₂ ,
It was calcined at 1100°C for 2 hours. Next, 10% by weight of vinyl acetate resin was added, wet-pulverized, sieved through a 30-mesh sieve, and then molded into a disc with a diameter of 10 mmφ and a wall thickness of 0.5 mm at a molding pressure of 750 kg/cm ² . The formed disk was once preliminarily fired at 1150°C in air, and then fired at 1400°C for 2 to 4 hours in a reducing atmosphere consisting of 98% by volume of nitrogen and 2% by volume of hydrogen to obtain semiconductor porcelain. In order to make the grain boundaries of the obtained semiconductor porcelain an insulator, a metal oxide paste prepared in advance was applied to the surface of the semiconductor porcelain by a coating method.
Heat treatment was performed in air at 1150°C for 2 hours to transform grain boundaries into insulators. The following types of metal oxide pastes were used, and the metal oxide pastes applied to each sample are shown in Table 2 with symbols A, B, and C. A: CuO 2% by weight, Bi ₂ O ₂ 46% by weight, H ₂ BO ₂ 2
Weight%, resin varnish 50% by weight B: CuO 5% by weight, Pb ₃ O ₄ 45% by weight, resin varnish 50% by weight C: Pb ₃ O ₄ 45% by weight, H ₃ BO ₃ 5% by weight, resin varnish 50% by weight % In addition, the resin varnish uses ethyl cellulose α-
It is diluted with terpineol. Furthermore, a capacitor was created by printing and applying silver paste on both sides of the grain-boundary insulated semiconductor porcelain and baking it at 800°C for 30 minutes. The electrical characteristics of the obtained capacitor were measured and the results are shown in Table 3. The conditions for measuring the electrical properties are the same as those shown in Table 1. Items marked with * in Tables 2 and 3 are outside the scope of this invention, and the others are within the scope of the invention.

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[Table] As is clear from the above examples, according to the present invention, Cs is 450nF/cm ² or more and △TC is ±10%.
and tanδ, DCB, distortion factor, E,
Each of the S and R properties exhibits practically sufficient values, and the composition is industrially useful as a composition for grain boundary insulated semiconductor ceramic capacitors.

Claims (1)

[Claims] 1 Mainly containing (Sr _1-x Ba _x )TiO ₃ (x=0.30 to 0.50) or (Sr _1-x Ba _x )TiO ₃ (x=0.30 to 0.50), and also titanic acid. In addition to the main components including salts and zirconates, rare earth elements such as La and Y, Nb,
Semiconductor porcelain containing a semiconducting agent such as Ta, W, etc. and having a maximum crystal grain size of 100 to 250μ, in which the crystal grain boundaries of the semiconductor porcelain are Cu and
A grain boundary insulated semiconductor ceramic composition made of at least one of Bi, Pb, B and Si. 2 Mainly composed of (Sr _1-x Ba _x )TiO ₃ (x=0.30-0.50) or (Sr _1-x Ba _x )TiO ₃ (x=0.30-0.50), with other titanates and zirconates. The main components include rare earth elements such as La and Y, Nb,
Semiconducting agents such as Ta, W, etc., and SiO ₂ ,
Semiconductor porcelain containing at least one kind of Al ₂ O ₃ and having a maximum crystal grain size of 100 to 250μ, in which the crystal grain boundaries of the semiconductor porcelain are composed of Cu, Bi,
A grain boundary insulated semiconductor ceramic composition made into an insulator by at least one of Pb, B and Si.