JPS6246954A - Insulative ceramic composition - Google Patents
Insulative ceramic compositionInfo
- Publication number
- JPS6246954A JPS6246954A JP60187714A JP18771485A JPS6246954A JP S6246954 A JPS6246954 A JP S6246954A JP 60187714 A JP60187714 A JP 60187714A JP 18771485 A JP18771485 A JP 18771485A JP S6246954 A JPS6246954 A JP S6246954A
- Authority
- JP
- Japan
- Prior art keywords
- mol
- porcelain
- resistivity
- multilayer wiring
- ceramic composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、多層配線基板等の材料として使用される絶
縁性磁器組成物に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to an insulating ceramic composition used as a material for multilayer wiring boards and the like.
従来、多層回路基板の材料には、主として絶縁性に優れ
たアルミナ系磁器組成物が使用されていた。この磁器組
成物は約96%のAl2O3粉末と、S i02 、M
gO,CaO等の粉末からなる磁器原料を還元雰囲気に
おいて、 1500〜1600℃の温度で′焼成するこ
とにより得られる。Conventionally, alumina-based ceramic compositions with excellent insulation properties have been mainly used as materials for multilayer circuit boards. This porcelain composition contains approximately 96% Al2O3 powder and S i02 , M
It is obtained by firing a porcelain raw material consisting of powders such as gO and CaO in a reducing atmosphere at a temperature of 1500 to 1600°C.
また、基板内部の導体の印刷にはMOやWを主体とした
導電ペーストが使用されている。Further, a conductive paste mainly composed of MO or W is used to print conductors inside the substrate.
上記従来のアルミナ磁器組成物は、熱膨張係数が7.5
X10′6/’C(線膨張係数)以上と大きいため、熱
衝撃に弱く、これから作られた多層回路基板に数十度以
上の温度差の熱衝撃を与えると、クランクが発生すると
いう欠点があった。The above conventional alumina porcelain composition has a thermal expansion coefficient of 7.5.
Because it has a large linear expansion coefficient of more than there were.
このため、多層配線基板に電子部品を半田付けする際に
は、同基板を予め半田の薄融温度に近い温度まで、ゆっ
くり時間をかけて加熱していく、いわゆる予熱工程を必
要とした。Therefore, when soldering electronic components to a multilayer wiring board, a so-called preheating process is required in which the board is heated slowly over time to a temperature close to the melting temperature of the solder.
この発明は、従来のアルミナ系絶縁性磁器組成物におけ
る上記の問題を解決すべくなされたもので、従来の磁器
組成物に比べて熱膨張係数が小さく、電気部品の半田付
は等に伴う熱衝撃によって、多層配線基板にクランク等
の損傷が生じにくい絶縁性磁器組成物を提供することを
目的とする。This invention was made to solve the above-mentioned problems with conventional alumina-based insulating porcelain compositions.Its thermal expansion coefficient is smaller than that of conventional porcelain compositions, and the heat generated by soldering of electrical parts, etc. An object of the present invention is to provide an insulating ceramic composition that is less likely to cause damage such as cranking to a multilayer wiring board due to impact.
この発明の絶縁性磁器組成物は、SiO2を12.8〜
65.6モル%と、Al2O3を1〜40モル%と、M
gOを1〜40.7モル%と、ZrO2を1〜30.3
モル%と、Li2Oを0.5〜10モル%と、 Ca
O,S r O,B a O,Z n Oのグループか
ら選ばれた一種以上を5〜45モル%と。The insulating porcelain composition of the present invention contains SiO2 of 12.8 to 12.8
65.6 mol%, Al2O3 from 1 to 40 mol%, M
gO from 1 to 40.7 mol% and ZrO2 from 1 to 30.3 mol%
mol%, 0.5 to 10 mol% of Li2O, Ca
5 to 45 mol% of one or more selected from the group consisting of O, SrO, BaO, and ZnO.
Mn30a 、CO304+ Nip、CuOのグルー
プから選ばれた1種以上を0.3〜7モル%の比率で混
合したものを、酸化雰囲気で焼成してなるものである。It is made by firing a mixture of one or more selected from the group of Mn30a, CO304+Nip, and CuO in a ratio of 0.3 to 7 mol% in an oxidizing atmosphere.
〔実施例〕 以下、この発明の実施例ついて説明する。〔Example〕 Examples of the present invention will be described below.
まず下表に掲げる各試料の製作方法と条件について、試
料1を例にとって説明すると、5t02粉末を50.3
g、 A l 203粉末を5.9g、 MgO粉末を
3.0g* Z r 02粉末を7.0g、 L i
2 CO3粉末を10.3g、 Ca CO3粉末を
24.5g、及びMn30を粉末を4.3gずつ秤量し
た。なお、上記Ca、Liの炭酸塩粉末は、何れも空気
中で安定なものを使用した。First, the manufacturing method and conditions for each sample listed in the table below will be explained using sample 1 as an example.
g, 5.9 g of Al 203 powder, 3.0 g of MgO powder* 7.0 g of Z r 02 powder, Li
10.3 g of 2 CO3 powder, 24.5 g of Ca CO3 powder, and 4.3 g of Mn30 powder were weighed. Note that the above Ca and Li carbonate powders were all stable in the air.
上記粉末をボールミルに入れ、約15時間ボールミリン
グすることにより、これらを湿式混合した。The above powders were wet mixed by placing them in a ball mill and ball milling for about 15 hours.
次に、上記混合粉末に対して、ポリビニルブチラール樹
脂を8重量%、ジブチルフタレートを8重量%、アセト
ンを40重量%、オレイン酸を0.5重量%ずつ加えて
攪拌し、スラリーを作った。次で、このスラリーをドク
ターブレード法によって延伸し、厚さ0.25mmの長
尺な未焼結磁器シートを作り、これを10am角に切断
した。Next, to the mixed powder, 8% by weight of polyvinyl butyral resin, 8% by weight of dibutyl phthalate, 40% by weight of acetone, and 0.5% by weight of oleic acid were added and stirred to form a slurry. Next, this slurry was drawn by a doctor blade method to produce a long unsintered porcelain sheet with a thickness of 0.25 mm, which was cut into 10-am squares.
そして切断された未焼結磁器シートから次の3種類のテ
ストピースを作った。第一のテストピースは、上記シー
トを直径16mの円板形に打ち抜いたものである。第二
のテストピースは。The following three types of test pieces were made from the cut unsintered porcelain sheets. The first test piece was obtained by punching out the above sheet into a disk shape with a diameter of 16 m. The second test piece is.
上記シートを17枚重ねてJIE f、 したちのを、
長さ36鶴1幅4Nの寸法に切断したもので、その厚さ
は約4Rである。第三のテストピースは、上記シートに
Pdを主成分とする導電ペーストを用いて配線パターン
を印刷し、これを6枚重ねて圧着し、長さ30鶴1幅1
5鶴に切断したもので。Stack 17 of the above sheets and make JIE f, Shitachino.
It was cut into a size of 36 cranes in length and 4N in width, and its thickness was about 4R. The third test piece was made by printing a wiring pattern on the above sheet using a conductive paste containing Pd as a main component, stacking 6 sheets and pressing them together, and measuring 30 pieces in length, 1 piece in width, 1 piece in width.
It was cut into 5 cranes.
厚さは約1.50である。The thickness is approximately 1.50.
これらテストピースを、空気中で毎時100℃の割合で
1000℃まで昇温させ、この温度を2時間維持した後
、常温まで毎時200℃の割合で冷却するというプロフ
ァイルで焼成した。These test pieces were fired in a profile in which the temperature was raised to 1000° C. at a rate of 100° C./hour in air, this temperature was maintained for 2 hours, and then cooled to room temperature at a rate of 200° C./hour.
続いて、焼成後のテストピースについて、それぞれ次の
方法で試験を行った。Subsequently, the fired test pieces were tested in the following manner.
第一の円板形のテストピースについては、その両生面に
In−Ga合金を塗布して、直径10鶴の電極を設け、
比誘電率ε、クォリティファクタQ及び抵抗率ρ(Ωc
I11)を測定した。比誘電率εは、25℃の温度下に
おいてIMIIzの周波数で測定した静電容量により算
出し、Qは、上記静電容量と同様の条件で測定した。ま
た抵抗率ρは、 500 Vの直流電圧を印加し、印加
開始から60秒後の絶縁抵抗値から算出した。For the first disk-shaped test piece, an In-Ga alloy was applied to its bifacial surface, and an electrode with a diameter of 10 mm was installed.
Relative permittivity ε, quality factor Q and resistivity ρ (Ωc
I11) was measured. The relative dielectric constant ε was calculated from the capacitance measured at a frequency of IMIIz at a temperature of 25° C., and Q was measured under the same conditions as the capacitance described above. Further, the resistivity ρ was calculated by applying a DC voltage of 500 V and from the insulation resistance value 60 seconds after the start of application.
17枚の磁器シートを積層して作られた第二のテストピ
ースについては、温度20〜500℃における線膨張係
数α(7℃)を測定した。Regarding the second test piece made by laminating 17 porcelain sheets, the coefficient of linear expansion α (7°C) at a temperature of 20 to 500°C was measured.
Pdの配線パターンが印刷された第三のテストピースに
ついては、予熱せずに常温から250℃の溶融半田に3
秒間浸漬した後、引き上げ。Regarding the third test piece on which the Pd wiring pattern was printed, the molten solder was heated from room temperature to 250℃ without preheating.
After soaking for a second, pull it out.
常温まで自然冷却させて、クランク等の発生の有無を調
べた。また、このテストピースを使用し、内部の配線パ
ターンが肉眼で透けて見えるか否かで遮光性を調べた。It was allowed to cool naturally to room temperature and examined for occurrence of cranks, etc. Furthermore, using this test piece, the light-shielding properties were examined by determining whether the internal wiring pattern was visible to the naked eye.
そして、透けて見えないものを遮光性良好とし、透けて
見えるものを遮光性不良とした。Those that could not be seen through were considered to have good light-shielding properties, and those that could be seen through were judged to have poor light-shielding properties.
以下、試料2〜78についても、下表の各欄に示すよう
な組成を有する磁器組成物から、3種類のテストピース
を作り、それぞれ試料1と同様の方法と条件で試験を行
った。但し、焼成温度FTは、各々異なり、別表各欄に
示す温度で実施した。Hereinafter, for Samples 2 to 78, three types of test pieces were made from porcelain compositions having the compositions shown in each column of the table below, and each test piece was tested in the same manner and under the same conditions as Sample 1. However, the firing temperature FT was different and was carried out at the temperatures shown in each column of the attached table.
下表から明らかな通り、これら1〜78までの試料は、
焼成温度FTが950〜1250℃、線膨張係数αが3
.5〜6.5 x 10−6/ ”cであった。また。As is clear from the table below, these samples 1 to 78 are:
Firing temperature FT is 950-1250℃, linear expansion coefficient α is 3
.. It was 5 to 6.5 x 10-6/''c. Also.
何れも熔融半田への浸漬試験においてクランク等の発生
は認められず、遮光性は良好であった。No cranking or the like was observed in any test of immersion in molten solder, and the light shielding properties were good.
なお、下表に具体的な数値の掲載を省略したが。Please note that specific figures have been omitted from the table below.
これら試料の非誘電率εは6〜9.Qは500〜200
0、抵抗率ρはlX1013〜5X101’Ω印であっ
た。The dielectric constant ε of these samples is 6 to 9. Q is 500-200
0, and the resistivity ρ was 1×1013 to 5×101′Ω.
この発明による磁器組成物の各成分の組成比は、上記実
施例を含めた多くの実験等により決定されたものである
が、これを上記のように限定した理由の概要は次の通り
である。The composition ratio of each component of the porcelain composition according to the present invention was determined through many experiments including the above-mentioned examples, but the reason for limiting it as above is summarized as follows. .
(1)Si02の含有量が12.8モル%未満のものや
、 65.6モル%を越えるものでは、何れも抵抗率ρ
が上記実施例に比べて低く、多層配線基板用材料として
好ましくない。(1) If the content of Si02 is less than 12.8 mol% or exceeds 65.6 mol%, the resistivity ρ
is lower than that of the above examples, and is not preferred as a material for multilayer wiring boards.
(2)A1203含有量が1モル%未満のものでは、磁
器の中に気泡が発生し、また、 40モル%を越えるも
のでは抵抗率ρが上記実施例に比べて低く、多層配線基
板として好ましくない。(2) If the A1203 content is less than 1 mol%, air bubbles will occur in the porcelain, and if the A1203 content exceeds 40 mol%, the resistivity ρ will be lower than that of the above examples, making it preferable as a multilayer wiring board. do not have.
(31MgOの含有量が1モル%未満のものでは。(31MgO content is less than 1 mol%.
磁器の中に気泡が生じ、また、 40.7モル%を越え
るものでは抵抗率ρが上記実施例に比べて低く、多層配
線基板として好ましくない。Bubbles are generated in the porcelain, and if it exceeds 40.7 mol %, the resistivity ρ is lower than that of the above example, which is not preferable as a multilayer wiring board.
(41ZrO2の含有量が1モル%未満のものや。(The content of 41ZrO2 is less than 1 mol%.
逆に30.3モル%を越えるものでは、抵抗率ρが上記
実施例に比べて低く、多層配線基板として好ましくない
。On the other hand, if it exceeds 30.3 mol %, the resistivity ρ will be lower than that of the above embodiments, which is not preferable as a multilayer wiring board.
(51t、i2oの含有量が0.5モル%未満のもので
は、線膨張係数αが上記実施例に比べて大きく、また、
10モル%を越えるものでは、抵抗率ρが上記実施例に
比べて低く、多層配線基板として好ましくない。(If the content of 51t, i2o is less than 0.5 mol%, the linear expansion coefficient α is larger than that of the above example, and
If it exceeds 10 mol %, the resistivity ρ will be lower than that of the above embodiments, and it will not be preferable as a multilayer wiring board.
(6) CaO、SrO、BaO、ZnOのグループ
から選ばれた1種以上からなる成分の含有量が5モル%
未満のものでは、抵抗率ρが上記実施例に比べて低く、
また、45モル%を越えるものでは、磁器の中に気泡が
発生し、多層配線基板として好ましくない。(6) The content of one or more components selected from the group of CaO, SrO, BaO, and ZnO is 5 mol%.
If the resistivity ρ is lower than that of the above example,
On the other hand, if the content exceeds 45 mol%, bubbles will occur in the porcelain, making it undesirable for use as a multilayer wiring board.
(71Mn30a + CO+ 04.N i○、C
uOのグループから選ばれた1種以上からなる成分の含
有量が0.3モル%未満のものでは、内部の配線パター
ンが透けて見え、パターンワークの機密保護の観点から
好ましくない。また、45モル%を越えるものでは、抵
抗率ρが上記実施例に比べて低く、多層配線基板として
好ましくない。(71Mn30a + CO+ 04.N i○, C
If the content of one or more components selected from the group of uO is less than 0.3 mol %, the internal wiring pattern will be visible, which is undesirable from the standpoint of protecting the security of the pattern work. Moreover, if it exceeds 45 mol %, the resistivity ρ will be lower than that of the above-mentioned examples, and this is not preferable as a multilayer wiring board.
以上説明した通り、この発明の絶縁磁器組成物では、3
.5〜6.5 X 10−6/ ℃と小さい線膨張係数
αが得られる。従ってこの磁器組成物から作られた多層
回路基板は、電子部品の半田付は工程で通常受ける23
0℃程度の温度差による熱衝撃によって、クランクが発
生しない、。これにより、多層配線基板に電子部品を半
田付けする際に、従来必要とされていた予熱工程を省く
ことができる。As explained above, the insulating porcelain composition of the present invention has 3
.. A linear expansion coefficient α as low as 5 to 6.5×10−6/° C. can be obtained. Therefore, multilayer circuit boards made from this porcelain composition are typically subjected to soldering of electronic components during the process.
Crank does not occur due to thermal shock caused by a temperature difference of about 0°C. Thereby, when soldering electronic components to a multilayer wiring board, it is possible to omit a preheating step that is conventionally required.
発明者 星 健− 同 上登板 正− 同 上吉見 尚Inventor Ken Hoshi Same as above pitched - Same as Hisashi Kamiyoshimi
Claims (1)
_3を1〜40モル%と、MgOを1〜40.7モル%
と、ZrO_2を1〜30.3モル%と、Li_2Oを
0.5〜10モル%と、CaO、SrO、BaO、Zn
Oのグループから選ばれた一種以上を5〜45モル%と
、Mn_3O_4、Co_3O_4、NiO、CuOの
グループから選ばれた1種以上を0.3〜7モル%の比
率で混合したものを、酸化雰囲気で焼成してなる絶縁性
磁器組成物。12.8 to 65.6 mol% of SiO_2 and Al_2O
_3 from 1 to 40 mol% and MgO from 1 to 40.7 mol%
, ZrO_2 1 to 30.3 mol%, Li_2O 0.5 to 10 mol%, CaO, SrO, BaO, Zn
A mixture of 5 to 45 mol% of one or more selected from the group O and 0.3 to 7 mol% of one or more selected from the group Mn_3O_4, Co_3O_4, NiO, and CuO is oxidized. An insulating porcelain composition fired in an atmosphere.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60187714A JPS6246954A (en) | 1985-08-26 | 1985-08-26 | Insulative ceramic composition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60187714A JPS6246954A (en) | 1985-08-26 | 1985-08-26 | Insulative ceramic composition |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6246954A true JPS6246954A (en) | 1987-02-28 |
JPH0585498B2 JPH0585498B2 (en) | 1993-12-07 |
Family
ID=16210886
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60187714A Granted JPS6246954A (en) | 1985-08-26 | 1985-08-26 | Insulative ceramic composition |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6246954A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01236515A (en) * | 1987-11-28 | 1989-09-21 | Tdk Corp | Dielectric porcelain material |
JP2002173362A (en) * | 2000-12-06 | 2002-06-21 | Murata Mfg Co Ltd | Dielectric ceramic composition and multilayer substrate using the same |
-
1985
- 1985-08-26 JP JP60187714A patent/JPS6246954A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01236515A (en) * | 1987-11-28 | 1989-09-21 | Tdk Corp | Dielectric porcelain material |
JP2002173362A (en) * | 2000-12-06 | 2002-06-21 | Murata Mfg Co Ltd | Dielectric ceramic composition and multilayer substrate using the same |
JP4714986B2 (en) * | 2000-12-06 | 2011-07-06 | 株式会社村田製作所 | Dielectric ceramic composition and multilayer substrate using the same |
Also Published As
Publication number | Publication date |
---|---|
JPH0585498B2 (en) | 1993-12-07 |
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