JPS62285354A - Ion implanter - Google Patents

Abstract

PURPOSE:To implant ions uniformly over a whole surface, by using a deflector to deflect an ion beam not yet accelerated by an accelerator, making the ion beam parallel, and using the accelerator to accelerate the ion beam subjected to parallel scanning, to radiate the ion beam onto an ion-implanted substrate. CONSTITUTION:An ion beam 14 emitted from an ion beam generator 13 comprising an ion generator 11 and a mass analysis magnet 12 is deflected horizontally and vertically within a prescribed range of angle by a deflector 18 comprising a four-pole electrostatic lens 15, an electron confining magnet 16 and a deflection means such as a mutually-facing flat plate deflector 17, and is made a parallel beam by a paralleling means such as a unipotential electrostatic lens 19. After that, the parallelized ion beam 14 is accelerated by an accelerator 20 so that an ion-implanted substrate such as a semiconductor wafer 22 held on a platen 21 is irradiated with the ion beam at a prescribed irradiation angle and thus scanned.

Description

Detailed Description of the Invention 3. Detailed Description of the Invention [Object of the Invention] (Field of Industrial Application) The present invention relates to an ion implantation apparatus for implanting desired ions into a semiconductor wafer or the like.

(Prior Art) In general, a conventional ion implantation apparatus for implanting ions into a substrate to be ion-implanted, such as a semiconductor wafer, is configured as shown in FIG. The ion beam 4 ejected from the ion beam generator 3 is accelerated by the accelerator 5, and the ion beam 4 is accelerated by the accelerator 5. The ions are implanted into a substrate to be ion-implanted, such as No. 10.

(Problems to be Solved by the Invention) However, in the conventional ion implantation apparatus described above,
Deflect the ion beam accelerated by the accelerator,
In order to perform scanning, the vertical deflection plate, horizontal deflection plate, and power supply device that applies voltage between these deflection plates of the scanning device become larger, which increases the size of the entire device. The incident angle of the ion beam on the surface of the ion-implanted substrate differs depending on the part of the substrate to be ion-implanted, such as the center and periphery of the wafer, and as a result, there is a problem in that it is not possible to uniformly implant ions over the entire surface of the substrate to be ion-implanted. Ta.

The present invention has been made in response to such conventional circumstances, and provides an ion implantation device that can be made smaller than conventional ones and can uniformly implant ions over the entire surface of a substrate to be implanted. This is what I am trying to do.

[Structure of the Invention] (Means for Solving the Problems) In other words, the ion implantation apparatus of the present invention includes an ion beam generator for ejecting a desired ion beam, and an ion beam ejected from the ion beam generator for a predetermined direction. a first-stage deflection device that scans within a predetermined angular range; a second-stage orientation device that converts the ion beam scanned within a predetermined angular range into a parallel beam; and a second-stage orientation device that accelerates the parallel ion beam to implant ions into the target ion beam. It is equipped with an accelerator that irradiates the substrate.

(Function) In the ion implantation apparatus of the present invention, the ion beam before being accelerated by the accelerator is scanned within a certain angle range by the first-stage deflection device, and this ion beam is made into a parallel beam by the second-stage orientation device, and the ion beam is scanned in parallel. The ion beam is accelerated by an accelerator and irradiated onto the substrate to be ion-implanted.

(Example) The details of the present invention will be described below with reference to an example shown in the drawings.

FIG. 1 shows an ion implanter according to an embodiment of the present invention, in which an ion generator 11 and a mass analysis magnet 1 are shown.
The ion beam 14 ejected from the ion beam generator 13 consisting of the The beam is made into a parallel beam by a post-deflection device 19 consisting of a potential electrostatic lens. Thereafter, the ion beam 14, which has been made into a parallel beam, is accelerated by an accelerator 20 and irradiated at a constant irradiation angle onto a substrate to be ion-implanted, such as a semiconductor wafer 22 held on a platen 21.

In the ion implantation apparatus of this embodiment with the above configuration, the ion beam 14 with low kinetic energy before being accelerated by the accelerator 21 is connected to the quadrupole electrostatic lens 15 in the first stage deflection device 18 in the vertical direction, for example, 1001]z , and a multipolar electrostatic field formed by the opposed flat plate deflector 17 to which a voltage with a frequency of approximately 1 to 82 is applied in the horizontal direction within a certain angular range. Note that the electron confinement magnet 16 limits the movement of electrons and improves the deflection characteristics of the ion beam 14 by forming a weak magnetic field of about several hundred G.

Therefore, the ion beam 14 scanned within a certain angle range
is converted into a parallel beam by a unipotential electrostatic lens in the subsequent deflection device 19.

After this, the ion beam scanned in parallel is transferred to the accelerator 2.
The light is accelerated by zero and is irradiated onto the surface of the semiconductor wafer 22 at a constant angle of incidence.

Therefore, in the ion implantation apparatus of this embodiment, since the ion beam having low kinetic energy before being accelerated is deflected, the first-stage deflection device 18, the second-stage deflection device 19, etc. can be downsized, and the entire device can be downsized. can do.

Furthermore, ions can be uniformly implanted into the semiconductor wafer 22 compared to conventional ion implantation apparatuses in which the incident angle of the ion beam 14 varies depending on the location on the surface of the semiconductor wafer 22.

[Advantageous Effects of the Invention 1] As described above, the ion implantation apparatus of the present invention can be made smaller in size than the conventional one, and can uniformly implant ions over the entire surface of the substrate to be ion implanted.

[Brief explanation of drawings]

FIG. 1 is a top view showing the configuration of an ion implantation apparatus according to an embodiment of the present invention, and FIG. 2 is a top view showing the configuration of a conventional ion implantation apparatus. 13... Ion beam generator, 14...
...Ion beam, 18...First stage deflector, 1
9...Late stage deflection device, 20...Acceleration device, 22...Semiconductor wafer. Applicant: Tokyo Elec “Dron Co., Ltd. Agent Patent Attorney: Satoshi Suyama - 12th Figure 2 Procedure Amendment (Voluntary) July 1988
18th of the month

Claims (1)

[Claims] (1) An ion beam generator that emits a desired ion beam, an initial deflection device that scans the ion beam emitted from the ion beam generator within a predetermined angular range, and an ion beam generator that emits a desired ion beam; An ion implantation apparatus comprising: a post-deflection device that converts the ion beam into a parallel beam; and an acceleration device that accelerates the parallel ion beam and irradiates the ion implantation target substrate with the accelerated ion beam.