JPS62271437A - Formation of insulating film - Google Patents
Formation of insulating filmInfo
- Publication number
- JPS62271437A JPS62271437A JP11375986A JP11375986A JPS62271437A JP S62271437 A JPS62271437 A JP S62271437A JP 11375986 A JP11375986 A JP 11375986A JP 11375986 A JP11375986 A JP 11375986A JP S62271437 A JPS62271437 A JP S62271437A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- insulating film
- silicon
- sif4
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title description 2
- 238000000034 method Methods 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 239000010703 silicon Substances 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims description 8
- 230000001590 oxidative effect Effects 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 238000005121 nitriding Methods 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 239000000758 substrate Substances 0.000 abstract description 19
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 abstract description 7
- 229910004014 SiF4 Inorganic materials 0.000 abstract description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 238000001179 sorption measurement Methods 0.000 abstract description 2
- 229910052990 silicon hydride Inorganic materials 0.000 abstract 1
- 239000012808 vapor phase Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 34
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 1
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical class O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910005091 Si3N Inorganic materials 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 229910000091 aluminium hydride Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
３、発明の詳細な説明
〔産業上の利用分野〕
本発明は、絶縁膜として使用するシリコンもしくはアル
ミニウムの酸化物もしくは窒化物の薄膜の成長方法に関
する。Detailed Description of the Invention 3. Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a method of growing a thin film of silicon or aluminum oxide or nitride used as an insulating film.
エミッタとベースの境界に薄い絶縁膜が形成されたポリ
シリコンエミッタトランジスタ（Ｍ。A polysilicon emitter transistor (M.
Ｂ、ローランドソン他、ＩＥＥＥ Ｅｌｅｃｔｒｏｎ
Ｄｅ−ｖｉｃｅ Ｌｅｔｔｅｒｓ、 ＥＤＬ−６巻
、 Ｎｏ、６． ｐ、 ２８８〜２９０（１９８
５）記載）は、１万以上の大きな電流利得を示している
。また、絶縁ゲート型電界効果トランジスタの相互コン
ダクタンスも絶縁膜の膜厚を薄くすることによって増大
することは良く知られている。B. Rowlandson et al., IEEE Electron
Device Letters, EDL-6 volume, No. 6. p, 288-290 (198
5) shows a large current gain of 10,000 or more. Furthermore, it is well known that the mutual conductance of an insulated gate field effect transistor also increases as the thickness of the insulating film is reduced.
このように、高性能のトランジスタを得るには薄い絶縁
膜を制御性よく被着する技術が重要である。しかし、こ
れまでの代表的な熱酸化膜形成法や化学気相成長法は、
薄い絶縁膜を制御性よく被着する点では、不充分な技術
であった。Thus, in order to obtain high-performance transistors, it is important to have a technique for depositing thin insulating films with good controllability. However, the typical thermal oxide film formation methods and chemical vapor deposition methods to date are
This technique was insufficient in terms of depositing thin insulating films with good controllability.
一方、サントラ（Ｓａｎｔｌａ）等は出願広告公報昭６
０−２１９５５においてハロゲン化合物と水を基板表面
に交互に吸着させ、その際に行われる交換表面反応を利
用して、酸化膜を成長させる方法について述べている。On the other hand, Santla etc. are published in the Application Publication Publication No. 6.
No. 0-21955 describes a method of growing an oxide film by alternately adsorbing a halogen compound and water onto the surface of a substrate and utilizing the exchange surface reaction that occurs at that time.
この方法は、単分子吸着現象を利用するため、原理的に
は原子層レベルで酸化膜を制御することが可能とされて
いる。しかし、吸着物で表面を完全に覆うためには、基
板を低温に保つ必要があり、成長した絶縁膜の膜質は必
ずしも良好とは言えず、従って、トランジスタの製造に
利用されるまでに至っていなかった。Since this method utilizes a single molecule adsorption phenomenon, it is theoretically possible to control the oxide film at the atomic layer level. However, in order to completely cover the surface with adsorbed substances, it is necessary to keep the substrate at a low temperature, and the quality of the grown insulating film is not necessarily good, so it has not been used for the manufacture of transistors. There wasn't.
本発明は、良好な品質をもつ絶縁膜を、原子層レベルで
膜厚を制御しながら成長させる方法を提供しようとする
ものである。The present invention aims to provide a method for growing an insulating film of good quality while controlling the film thickness at the atomic layer level.
本発明は、シリコン、もしくはアルミニウムを２原子層
被着する工程、酸化性もしくは窒化性雰囲気に前記被着
表面を曝すことにより、シリコンもしくはアルミニウム
の酸化膜もしくは窒化膜を形成する工程から成り、上記
２工程を交互に行うことにより、シリコンもしくはアル
ミニウムの酸化膜もしくは窒化膜を所望の厚さに成長さ
せる絶縁膜の形成方法にある。The present invention comprises a step of depositing two atomic layers of silicon or aluminum, and a step of forming a silicon or aluminum oxide film or nitride film by exposing the deposited surface to an oxidizing or nitriding atmosphere. The present invention provides a method for forming an insulating film in which a silicon or aluminum oxide film or nitride film is grown to a desired thickness by performing two steps alternately.
シリコンもしくはアルミニウムの２原子層は、例えば、
基板表面にシリコンもしくはアルミニウムのフン化物を
単分子吸着させた後、さらに前記元素の水素化物を吸着
させることにより形成される。前記元素のフッ化物及び
水素化物を装置内から除去した後、４００℃〜１０００
℃に保った基板表面に、例えば、酸化性雰囲気としては
水で飽和した酸素ガス、あるいは、Ｎ Ｏｘガス、窒化
性雰囲気としてはアンモニアガスを導入すると、前記２
原子層の元素が酸化もしくは窒化される。このようにし
て、極薄の絶縁膜が形成される。以上の工程を所望の厚
さに達するまで繰り返すと、良質の絶縁膜を膜厚精度よ
く成長させることができる。A diatomic layer of silicon or aluminum is, for example,
It is formed by adsorbing a single molecule of a silicon or aluminum fluoride onto the substrate surface and then adsorbing a hydride of the element. After removing the fluorides and hydrides of the above elements from the apparatus, the temperature
If, for example, water-saturated oxygen gas or NOx gas is introduced as an oxidizing atmosphere, and ammonia gas is introduced as a nitriding atmosphere onto the substrate surface kept at
Elements in atomic layers are oxidized or nitrided. In this way, an extremely thin insulating film is formed. By repeating the above steps until the desired thickness is reached, a high-quality insulating film can be grown with high precision in thickness.
実施例１゜
第１図は、本発明の絶縁膜形成成長に用いた装置の概要
を示す図である。Example 1 FIG. 1 is a diagram schematically showing an apparatus used for forming and growing an insulating film according to the present invention.
シリコンＳｉ結晶を用いた基板１を真空容器２内に設置
する。基板１を置いた台３の温度を一定に制御する。A substrate 1 using silicon Si crystal is placed in a vacuum container 2. The temperature of the table 3 on which the substrate 1 is placed is controlled to be constant.
基板表面には３種類のガスをそれぞれバイブ４．５およ
び６を通して独立に照射する。また、上方の２つの窓７
を通して光を照射する。真空排気系８との間にはゲート
バルブ９を設ける。符号１０は真空計である。Three types of gases are independently irradiated onto the substrate surface through vibrators 4.5 and 6, respectively. Also, the upper two windows 7
Irradiates light through. A gate valve 9 is provided between the vacuum exhaust system 8 and the vacuum exhaust system 8 . Reference numeral 10 is a vacuum gauge.
まず、容器２の内部を真空排気系８によって排気し、ｌ
Ｘｌ０−”パスカルの真空度とし、基板１を４００℃に
保ち、フッ化シリコンＳｉＦ、をバイブ４から導入する
と、ＳｉＦ、が基板１上に単分子層として吸着する。吸
着は、約１秒でほとんど飽和状態に達する。ＳｉＦ４供
給中の容器２内の真空度は、ｌＸｌ０−”パスカルであ
った。次いでＳ ｉ Ｆ４の供給を止め容器２内部をＩ
Ｘ １０−’パスカルまで排気した後、シランＳｉｇ
ｎをバイブ５からＩ Ｘ １０−”パスカルの真空度に
なるように導入すると、Ｓ ｉ Ｈ４は５ｉＦａで覆わ
れた基板１上に吸着し、
Ｓ ｉ Ｆ ４ ＋ Ｓ ｉ Ｈ４−〉２ Ｓ ｉ ＋
４ ＨＦの式で表される表面交換反応が行われ、気相
中にフッ酸ＨＦが放出され、基板１の表面には２原子層
のＳｉが成長した。この置換反応を促進するために、上
方の窓７から紫外線を照射した。First, the inside of the container 2 is evacuated by the vacuum exhaust system 8, and
When the substrate 1 is kept at 400° C. and silicon fluoride SiF is introduced from the vibrator 4 under a vacuum degree of Almost saturation was reached.The degree of vacuum in the vessel 2 during the SiF4 supply was 1X10-'' Pascal. Next, the supply of S i F4 is stopped and the inside of the container 2 is
After evacuation to X 10-'Pascals, silane Sig
When n is introduced from the vibrator 5 to a degree of vacuum of I x 10-'' Pascal, S i H4 is adsorbed onto the substrate 1 covered with 5iFa, and S i F 4 + S i H4-〉2 S i +
A surface exchange reaction represented by the formula 4HF was performed, hydrofluoric acid HF was released into the gas phase, and two atomic layers of Si were grown on the surface of the substrate 1. In order to promote this substitution reaction, ultraviolet rays were irradiated from the upper window 7.
次いで、再び容器２内をｌＸｌ０−６パスカルまで排気
し、バイブロから飽和蒸気圧の水を含んだ酸素をｌＸｌ
０−”パスカル導入した。水は先に成長したＳｉ表面に
吸着し、Ｓｉを酸化し、二酸化珪素５ｉｆｔ膜を形成し
た。２原子層のＳｉが酸化されるに必要な時間は、基板
１の温度４００℃では約２分間の照射で充分であった。Next, the inside of the container 2 is evacuated to lXl0-6 Pascal again, and oxygen containing water at saturated vapor pressure is pumped from the vibro to lXl0-6 Pascal.
0-" Pascal was introduced. Water was adsorbed on the previously grown Si surface, oxidized the Si, and formed a 5ft film of silicon dioxide. The time required for oxidation of two atomic layers of Si is At a temperature of 400°C, irradiation for about 2 minutes was sufficient.
１０００℃では約１０秒の照射で充分であった。At 1000°C, irradiation for about 10 seconds was sufficient.
以上の工程で成長したＳｉＯ２膜の膜厚は６．１人であ
り、上記工程を１０回繰り返すことにより、６１人の５
ｉｎ２膜が成長した。The thickness of the SiO2 film grown in the above process is 6.1 people, and by repeating the above process 10 times, 5
An in2 film was grown.
実施例２゜
実施例１と同様にしてＳｔ基板１上に２原子層のＳｉを
成長させた。Example 2 In the same manner as in Example 1, two atomic layers of Si were grown on the St substrate 1.
その後、容器２内をｌＸｌ０−’パスカルまで排気しバ
イブロからアンモニアＮＨ，をＩ Ｘ １０−”パスカ
ル導入した。ＮＨ３は先に成長したＳｉ表面に吸着し、
Ｓｉを窒化しＳｉ窒化膜Ｓｉ３Ｎ、を形成した。２原子
層のＳｉが窒化されるに必要な時間に、基板１の温度４
００℃では約１０分間の照射で充分であり、１０００℃
では約５０秒の照射で充分であった。Thereafter, the inside of the container 2 was evacuated to lXl0-' Pascal, and ammonia NH, was introduced from a vibro to I x 10-' Pascal.NH3 was adsorbed on the previously grown Si surface.
Si was nitrided to form a Si nitride film Si3N. During the time required for two atomic layers of Si to be nitrided, the temperature of the substrate 1 is 4.
At 00℃, irradiation for about 10 minutes is sufficient; at 1000℃
In this case, irradiation for about 50 seconds was sufficient.
以上の実施例では、Ｓｉの酸化膜及び窒化膜を成長させ
たが、この方法に限定されることなく、例えば、Ａ Ｉ
Ｆ ｚとＡｌＨ３を交互に照射することによって２原
子層のＡｌ膜を形成し、基板１の温度４００〜６００℃
で実施例１及び２と同様に酸化性もしくは窒化性雰囲気
に曝すことにより、アルミナ膜Ａｌ！２０３もしくはア
ルミ窒化膜ＡＩＮを成長させることができる。また、酸
化性ガスとして酸化窒素ＮＯｘを用いることも可能であ
る。In the above embodiments, a Si oxide film and a nitride film were grown, but the method is not limited to this, and for example, A I
By alternately irradiating Fz and AlH3, a two-atomic layer Al film is formed, and the temperature of the substrate 1 is 400 to 600°C.
By exposing to an oxidizing or nitriding atmosphere as in Examples 1 and 2, the alumina film Al! 203 or an aluminum nitride film AIN. It is also possible to use nitrogen oxide NOx as the oxidizing gas.
本発明による絶縁膜の形成方法により成長した絶縁膜は
、ガス供給サイクルの回数に対応して、成長膜厚を正確
に制御することが可能である。In the insulating film grown by the method for forming an insulating film according to the present invention, the thickness of the grown film can be accurately controlled in accordance with the number of gas supply cycles.
本方法で得られた絶縁膜は、誘電率、誘電損失、耐圧、
純度の点で熱酸化膜及び熱窒化膜と同等の特性を有して
いる。このため、トランジスタの製造に適用して優れた
特性を発揮する。The insulating film obtained by this method has dielectric constant, dielectric loss, breakdown voltage,
In terms of purity, it has properties equivalent to thermal oxide films and thermal nitride films. Therefore, it exhibits excellent characteristics when applied to the manufacture of transistors.
第１図は、本発明実施例に用いた絶縁膜製造用装置の概
略図である。
１・・・基板
２・・・真空容器
３・・・台
４、 ５． ６・・・パイプ
７・・・窓
８・・・真空排気系
９・・・ゲートパルプ
１０・・・真空計FIG. 1 is a schematic diagram of an insulating film manufacturing apparatus used in an embodiment of the present invention. 1... Substrate 2... Vacuum container 3... Stand 4, 5. 6... Pipe 7... Window 8... Vacuum exhaust system 9... Gate pulp 10... Vacuum gauge
Claims (1)
る工程、酸化性もしくは窒化性ガスを前記被着表面に吸
着させ、シリコンもしくはアルミニウムの酸化膜もしく
は窒化膜を形成する工程から成り、上記２工程を交互に
行うことにより、シリコンもしくはアルミニウムの酸化
膜もしくは窒化膜を形成する絶縁膜の形成方法。(1) It consists of the step of depositing two atomic layers of silicon or aluminum, and the step of adsorbing an oxidizing or nitriding gas to the surface of the deposit to form an oxide or nitride film of silicon or aluminum. A method of forming an insulating film in which silicon or aluminum oxide or nitride films are formed by performing the steps alternately.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11375986A JPS62271437A (en) | 1986-05-20 | 1986-05-20 | Formation of insulating film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11375986A JPS62271437A (en) | 1986-05-20 | 1986-05-20 | Formation of insulating film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62271437A true JPS62271437A (en) | 1987-11-25 |
Family
ID=14620420
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11375986A Pending JPS62271437A (en) | 1986-05-20 | 1986-05-20 | Formation of insulating film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62271437A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002217317A (en) * | 2001-01-16 | 2002-08-02 | Sony Corp | Non-volatile semiconductor storage device and its manufacturing method |
| JP2006066587A (en) * | 2004-08-26 | 2006-03-09 | Hitachi Kokusai Electric Inc | Method of forming silicon oxide film |
| JP2008010888A (en) * | 2000-11-21 | 2008-01-17 | Micron Technology Inc | Film composition deposited on substrate and semiconductor device thereof |
| JP2010206223A (en) * | 2010-06-11 | 2010-09-16 | Hitachi Kokusai Electric Inc | Method of manufacturing semiconductor device, and substrate processing apparatus |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6195535A (en) * | 1984-10-16 | 1986-05-14 | Matsushita Electric Ind Co Ltd | Manufacture of silicon nitride film |
-
1986
- 1986-05-20 JP JP11375986A patent/JPS62271437A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6195535A (en) * | 1984-10-16 | 1986-05-14 | Matsushita Electric Ind Co Ltd | Manufacture of silicon nitride film |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008010888A (en) * | 2000-11-21 | 2008-01-17 | Micron Technology Inc | Film composition deposited on substrate and semiconductor device thereof |
| JP2002217317A (en) * | 2001-01-16 | 2002-08-02 | Sony Corp | Non-volatile semiconductor storage device and its manufacturing method |
| JP4617574B2 (en) * | 2001-01-16 | 2011-01-26 | ソニー株式会社 | Nonvolatile semiconductor memory device and manufacturing method thereof |
| JP2006066587A (en) * | 2004-08-26 | 2006-03-09 | Hitachi Kokusai Electric Inc | Method of forming silicon oxide film |
| JP2010206223A (en) * | 2010-06-11 | 2010-09-16 | Hitachi Kokusai Electric Inc | Method of manufacturing semiconductor device, and substrate processing apparatus |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| George et al. | Atomic layer controlled deposition of SiO2 and Al2O3 using ABAB… binary reaction sequence chemistry | |
| JPS6364993A (en) | Growth method of elemental semiconductor single crystal thin film | |
| JP2776726B2 (en) | Method for manufacturing semiconductor device | |
| JP2003332333A (en) | Low-temperature deposition of insulating film | |
| JP2789587B2 (en) | Manufacturing method of insulating thin film | |
| JPH07249618A (en) | Method for manufacturing semiconductor device | |
| JPS62271437A (en) | Formation of insulating film | |
| JP2008027932A (en) | Process for fabricating semiconductor device and atomic layer deposition equipment | |
| JPS5998726A (en) | Formation of oxide film | |
| JPH05221644A (en) | Production of thin tantalum oxide film | |
| JP4032889B2 (en) | Insulating film formation method | |
| JPS628519A (en) | Formation of impurity diffused layer | |
| RU2660622C1 (en) | Silicon dioxide-on-silicon film and method for production thereof | |
| JPH0327565A (en) | Method for forming capacitance insulating film | |
| JPH04111362A (en) | Thin-film transistor and its manufacture | |
| JP2606318B2 (en) | Method of forming insulating film | |
| JPS59129774A (en) | Selective formation of nitrided film | |
| JP7240946B2 (en) | Silicon oxide film forming method | |
| JP2000357690A (en) | Insulation film, forming method thereof and semiconductor device using the insulation film | |
| JPH04362017A (en) | Formation of oriented ta2o5 thin film | |
| JPS6125213B2 (en) | ||
| JPH04290219A (en) | Method of forming polycrystalline silicon film | |
| JPH0427116A (en) | How to form semiconductor heterojunctions | |
| JPS6390138A (en) | Method for cleaning semiconductor surface | |
| JP2000114253A (en) | Semiconductor oxide film formation |