JPS62262458A - Semiconductor integrated circuit device - Google Patents

Abstract

PURPOSE:To cut down the conventional two contact openings to one by a method wherein a junction with a high melting point metallic silicide is formed between semiconductors with different conductivity types to be connected in circuit. CONSTITUTION:A junction with a high melting point metallic silicide 11 is formed between an N type semiconductor region 2 and a P type semiconductor thin film 5. Through these procedures, the N type semiconductor region 2 and the high melting point silicide 11 can be brought into ohmic contact with each other as well as the P type semiconductor thin film 5 and the high melting point metallic silicide 11 can be brought into ohmic contact with each other so that the N type semiconductor 2 and the P type semiconductor thin film 5 may be connected in circuit through the intermediary of the high melting point metallic silicide 11.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a contact part.

[Summary of the invention]

The present invention provides a semiconductor integrated circuit device in which high melting point metal silicide is provided between semiconductors of different conductivity types.
Semiconductors of different conductivity types are connected in a circuit by making ohmic contact between half-duplexes of different 4J conductivity types using high melting point metal silicide.

[Conventional technology]

One of the conventional methods for connecting semiconductors of different conductivity types is a method using aluminum, for example, the method shown in FIGS. 2a and 2b. 1 is a P-type semiconductor substrate, 2 is an N
3 is a field oxidation film, 5 is a P-type semiconductor thin film, 4 is an interlayer insulation between the N-type semiconductor region 2 and the P-type semiconductor film 5, 7 is aluminum, and 6 is the P-type semiconductor film 5. Insulation between m and aluminum 7, 8 is N open circuit membrane 4゜6
A contact hole 9 is formed by selectively etching the interlayer insulating film 6. Reference numeral 9 denotes a contact hole formed by selectively etching the interlayer insulating film 6.

If the N-type semiconductor region 2 and the P-type semiconductor thin film 5 are brought into direct contact for the purpose of circuit connection, a junction diode will be formed.
The N-type semiconductor region 2 and the P-type semiconductor thin film 5 are brought into ohmic contact by bringing the N-type semiconductor region VC2 into ohmic contact with the aluminum 7, and by bringing the P-type semiconductor film 5 into ohmic contact with the aluminum 7 through the contact opening 9. It was connected in a circuit.

[Problem that the invention seeks to solve]

However, the above-mentioned conventional technology has a problem in that semiconductors of different conductivity types can only be connected in a circuit manner through ohmic contact with aluminum.

The present invention is intended to solve these problems, and its purpose is to provide a method for connecting semiconductors of different conductivity types in a circuit without using aluminum.

[Means for solving problems]

A semiconductor integrated circuit device of the present invention includes a first semiconductor substrate;
A first conductor T formed on a part of the surface of the first semiconductor substrate
a second semiconductor region of iL type, and a third semiconductor region of a second conductivity type having a conductivity type opposite to the first conductivity type formed on a part of the surface of the first semiconductor substrate via an insulating film. a semiconductor thin film, the second semiconductor region and the third semiconductor thin film are interposed between the second semiconductor region and the third semiconductor thin film through a silicide of a high melting point metal formed on a part of the surface of the second semiconductor region. It is characterized by joining.

〔Example〕

Basically, the semiconductor integrated circuit device of the present invention is shown in FIG.
, has the structure shown in b. 1 is a P-type semiconductor substrate, 2 is an N-type semiconductor region, 3 is a field oxide film, 5 is a P-type semiconductor thin film, 4 is an interlayer insulation film between the N-type semiconductor region 2 and the P-type semiconductor thin film 5, and 10 is an interlayer insulation A contact hole is formed by selectively etching the film 4, and 11 is a high melting point metal silicide.

By forming a junction with the high melting point metal silicide 11 between the N type semiconductor region 2 and the P type semiconductor layer 5, the N type semiconductor region 2 and the high melting point metal silicide 11 are brought into ohmic contact. Since the P-type semiconductor thin film 5 and the high-melting point metal silicide 11 can be brought into ohmic contact, the N-type semiconductor region 2 can be connected via the high-melting point metal silicide 11.
and the P-type semiconductor thin film 5 can be connected in a circuit manner. [Effects of the Invention] An advantage of the present invention is that in order to connect semiconductors of different conductivity types in a circuit manner, it is possible to connect semiconductors of different conductivity types to each other in a circuit manner. By forming a bond between the metal and the silicide, it was possible to reduce the number of conventional contact holes 1@S from 2 to 1. In other words, the contact opening can be halved, improving the degree of integration and contributing to an improvement in yield. Also,
Reliability is improved because metal wiring materials such as aluminum are not used.

[Brief explanation of drawings]

FIG. 1(α) is a plan view showing an embodiment of the semiconductor integrated circuit device of the present invention, and FIG. 1(b) is a main sectional view thereof. FIG. 2(α) is a plan view showing a conventional semiconductor integrated circuit device, and FIG. 2(b) is a main sectional view thereof. 1...P type semiconductor substrate 2...N type semiconductor region 3...Field oxide film 4...Interlayer insulating film 5...P type semiconductor thin film 6... Interlayer insulating film 7... Aluminum 8.9.10... Contact opening portion 11...
...High melting point metal silicide 1 eup (a) wealth 11! lb) No. 21 ¥1 (1))

Claims (1)

[Claims] (1) a first semiconductor substrate; a second semiconductor region of a first conductivity type formed on a partial surface of the first semiconductor substrate;
A second semiconductor substrate having a conductivity type opposite to the first conductivity type formed on a part of the surface of the first semiconductor substrate via an insulating film.
A semiconductor integrated circuit device including a third conductive type semiconductor thin film, wherein the second semiconductor region and the above are connected to each other through a silicide of a high melting point metal formed on a part of the surface of the second semiconductor region. A semiconductor integrated circuit device, characterized in that it is bonded to a third semiconductor thin film.