JPS62265728A - Anodic bonding method - Google Patents
Anodic bonding methodInfo
- Publication number
- JPS62265728A JPS62265728A JP61108544A JP10854486A JPS62265728A JP S62265728 A JPS62265728 A JP S62265728A JP 61108544 A JP61108544 A JP 61108544A JP 10854486 A JP10854486 A JP 10854486A JP S62265728 A JPS62265728 A JP S62265728A
- Authority
- JP
- Japan
- Prior art keywords
- sio2
- bonding method
- anodic bonding
- substrate
- voids
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000000654 additive Substances 0.000 claims description 2
- 230000000996 additive effect Effects 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 11
- 238000000059 patterning Methods 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 5
- 229910052906 cristobalite Inorganic materials 0.000 abstract 5
- 239000000377 silicon dioxide Substances 0.000 abstract 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract 5
- 229910052682 stishovite Inorganic materials 0.000 abstract 5
- 229910052905 tridymite Inorganic materials 0.000 abstract 5
- 239000011800 void material Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Landscapes
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、Ｓｉ基板を重ね合わせて１枚の基板を得るア
ノ−ディックボンディング法に関し、特にそのポンディ
ングが良好に行われるようにした方法に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an anodic bonding method for stacking Si substrates to obtain a single substrate, and in particular to a method for achieving good bonding. Regarding.
（従来技術〕
アノ−ディックボンディング法は、第３図に示すように
、Ｓｉ （シリコン）基板ｌ、２の５ｉＯｚ （酸化シ
リコン）３．４を炉内で対面接触させで、静電気力で加
圧すると共に高温加熱して相互に接着させる接着方法で
ある。(Prior art) As shown in Fig. 3, in the anodic bonding method, Si (silicon) substrates 1 and 2 of 5iOz (silicon oxide) 3.4 are brought into face-to-face contact in a furnace, and pressure is applied using electrostatic force. This is an adhesion method in which both are heated at high temperature and bonded to each other.
この方法により、パワーＩＣの素子弁ｎ１等を行なうこ
とができ、従来のポリシリコンを使用する場合に比較し
てウェハの反りが小さく、また曵結晶であるため熱の放
散性が良い等の利点がある。With this method, it is possible to perform the element valve n1 of power IC, etc., and it has advantages such as less warping of the wafer compared to the case of using conventional polysilicon, and good heat dissipation because it is a hollow crystal. There is.
ところが、このポンディング方法は、平坦なＳｉＯ□面
を接着させるので、その接着部分の内部にガスやパーテ
ィクルを含んだボイド（ｖｏｉｄ）が発生し、欠陥が発
生するという問題がある。However, since this bonding method bonds flat SiO□ surfaces, there is a problem in that voids containing gas and particles are generated inside the bonded portion, resulting in defects.
本発明の目的は、ボイドが発生しないようにした７ノー
デイツクボンデイング法を提ｆＪ％することである。An object of the present invention is to provide a non-dick bonding method that does not generate voids.
このために本発明は、予め少なくとも一方の５ｉ０２を
溝により複数の島状に分離しておくようにした。For this reason, in the present invention, at least one 5i02 is separated into a plurality of islands by grooves in advance.
以下、本発明の実施例について説明する。第１図はその
一実施例を示す図である。本実施例では、一方のＳｉ基
板５に溝６によって分離した複数の島状のＳｉＯ□７を
パターニングにより設けておいて、この状態でその５ｉ
Ｏｚ ７の面と５ｉＯｚ３の面とを対面させて接着させ
るようにした。Examples of the present invention will be described below. FIG. 1 is a diagram showing one embodiment thereof. In this embodiment, a plurality of island-shaped SiO□7 separated by grooves 6 are provided on one Si substrate 5 by patterning, and in this state, the
The 7 Oz surface and the 5iOz 3 surface were made to face each other and adhered to each other.
炉内において温度を上昇させると、Ｓｉ基板５の側にお
いては、５ｉＯｚ ７の面から接着が開始し、多点での
接着の結果できるボイドは、溝６内に集中するようにな
る。When the temperature is increased in the furnace, adhesion starts from the 5iOz 7 surface on the Si substrate 5 side, and voids formed as a result of adhesion at multiple points become concentrated in the grooves 6.
よって、このボイドのできた溝部分を後で除去すれば、
ボイドの無い接着部分を有する小基板を得ることができ
る。Therefore, if you remove this voided groove later,
A small substrate having a void-free bonded portion can be obtained.
第２図は別の例を示す図であり、５ｉ（ｈ ７の上面に
更に凸部８を設けたものであり、この場合はこの凸部８
の部分から接着が開始し、ボイドをより正確に溝６内に
集中させることができるようになる。FIG. 2 is a diagram showing another example, in which a convex portion 8 is further provided on the upper surface of 5i (h 7, and in this case, this convex portion 8
Adhesion starts from the portion , making it possible to more accurately concentrate the voids within the groove 6.
なお、上記したＳｉＯ□７の上面、或いは凸部８の上面
部分に、Ｐ（燐） 、Ａｓ （砒素）、Ｂ （硼素）、
Ｇｅ （ゲルマニウム）等の添加層を形成すれば、軟化
点が低下して、より低い温度で接着を実現することがで
きる。In addition, on the upper surface of the above-mentioned SiO□7 or the upper surface portion of the convex portion 8, P (phosphorus), As (arsenic), B (boron),
By forming an additive layer of Ge (germanium) or the like, the softening point is lowered and adhesion can be achieved at a lower temperature.
以上から本発明によれば、アノーディンクボンディング
によって最終的に得るべき部分にボイドが発生しないよ
うにすることができる。As described above, according to the present invention, it is possible to prevent voids from occurring in the portion to be finally obtained by anodically bonding.
第１図は本発明の一実施例の説明図、第２図は別の実施
例の説明図、第３図はアノ−ディ、クボンディング法の
説明図である。
１．２．５・・・Ｓｉ基板、３．４．７・・・ＳｉＯ□
、６・・・溝、８・・・凸部。FIG. 1 is an explanatory diagram of one embodiment of the present invention, FIG. 2 is an explanatory diagram of another embodiment, and FIG. 3 is an explanatory diagram of the anode and bonding method. 1.2.5...Si substrate, 3.4.7...SiO□
, 6... Groove, 8... Convex portion.
Claims (3)
＿２を相互に接着するアノーディックボンディング法に
おいて、 予め少なくとも一方のＳｉＯ＿２を溝により複数の島状
に分離しておくことを特徴とするアノーディックボンデ
ィング法。(1) Each SiO formed on the top surface of each Si substrate
An anodic bonding method for bonding SiO_2 to each other, the anodic bonding method is characterized in that at least one of the SiO_2 is separated into a plurality of islands by grooves in advance.
特徴とする特許請求の範囲第１項記載のアノーディック
ボンディング法。(2) The anodic bonding method according to claim 1, wherein the island-shaped SiO_2 has a convex portion.
Ｇｅ、等の添加層を有することを特徴とする特許請求の
範囲第１項又は第２項記載のアノーディックボンディン
グ法。(3), the above SiO_2 has P, As, B,
The anodic bonding method according to claim 1 or 2, characterized in that it has an additive layer of Ge or the like.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61108544A JPS62265728A (en) | 1986-05-14 | 1986-05-14 | Anodic bonding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61108544A JPS62265728A (en) | 1986-05-14 | 1986-05-14 | Anodic bonding method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62265728A true JPS62265728A (en) | 1987-11-18 |
Family
ID=14487515
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61108544A Pending JPS62265728A (en) | 1986-05-14 | 1986-05-14 | Anodic bonding method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62265728A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5396042A (en) * | 1991-12-25 | 1995-03-07 | Rohm Co Ltd | Anodic bonding process and method of producing an ink-jet print head using the same process |
| KR100490756B1 (en) * | 2003-06-10 | 2005-05-24 | 전자부품연구원 | Anodic bonding Method using cap |
| US7153759B2 (en) | 2004-04-20 | 2006-12-26 | Agency For Science Technology And Research | Method of fabricating microelectromechanical system structures |
| US7192841B2 (en) | 2002-04-30 | 2007-03-20 | Agency For Science, Technology And Research | Method of wafer/substrate bonding |
| US7259466B2 (en) | 2002-12-17 | 2007-08-21 | Finisar Corporation | Low temperature bonding of multilayer substrates |
| US7361593B2 (en) | 2002-12-17 | 2008-04-22 | Finisar Corporation | Methods of forming vias in multilayer substrates |
| US7927975B2 (en) | 2009-02-04 | 2011-04-19 | Micron Technology, Inc. | Semiconductor material manufacture |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5873166A (en) * | 1981-10-13 | 1983-05-02 | ユナイテツド・テクノロジ−ズ・コ−ポレイシヨン | Capacitive pressure transducer and method of producing same |
-
1986
- 1986-05-14 JP JP61108544A patent/JPS62265728A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5873166A (en) * | 1981-10-13 | 1983-05-02 | ユナイテツド・テクノロジ−ズ・コ−ポレイシヨン | Capacitive pressure transducer and method of producing same |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5396042A (en) * | 1991-12-25 | 1995-03-07 | Rohm Co Ltd | Anodic bonding process and method of producing an ink-jet print head using the same process |
| US6086188A (en) * | 1991-12-25 | 2000-07-11 | Rohm Co., Ltd. | Ink-jet print head having parts anodically bonded |
| US7192841B2 (en) | 2002-04-30 | 2007-03-20 | Agency For Science, Technology And Research | Method of wafer/substrate bonding |
| US7259466B2 (en) | 2002-12-17 | 2007-08-21 | Finisar Corporation | Low temperature bonding of multilayer substrates |
| US7361593B2 (en) | 2002-12-17 | 2008-04-22 | Finisar Corporation | Methods of forming vias in multilayer substrates |
| KR100490756B1 (en) * | 2003-06-10 | 2005-05-24 | 전자부품연구원 | Anodic bonding Method using cap |
| US7153759B2 (en) | 2004-04-20 | 2006-12-26 | Agency For Science Technology And Research | Method of fabricating microelectromechanical system structures |
| US7405466B2 (en) | 2004-04-20 | 2008-07-29 | Agency For Science, Technology And Research | Method of fabricating microelectromechanical system structures |
| US7927975B2 (en) | 2009-02-04 | 2011-04-19 | Micron Technology, Inc. | Semiconductor material manufacture |
| US8389385B2 (en) | 2009-02-04 | 2013-03-05 | Micron Technology, Inc. | Semiconductor material manufacture |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4028017B2 (en) | Method for moving a thin film from an initial substrate onto a target substrate | |
| JP2685819B2 (en) | Dielectric isolated semiconductor substrate and manufacturing method thereof | |
| US6887342B2 (en) | Field-assisted fusion bonding | |
| JP2005005708A (en) | Method for manufacturing heterogeneous structure | |
| JPS62265728A (en) | Anodic bonding method | |
| JPH0485827A (en) | Manufacturing method of semiconductor device | |
| JPH098124A (en) | Insulation separation substrate and its manufacture | |
| CA2030484A1 (en) | Semiconductor pressure sensor and method for manufacturing the same | |
| JPH0613456A (en) | Manufacture of semiconductor device | |
| JPH07142570A (en) | Composite semiconductor substrate and manufacturing method thereof | |
| JPH0945882A (en) | Semiconductor substrate and manufacture thereof | |
| JPS63246841A (en) | Dielectric isolating method of silicon crystal body | |
| JPH01305534A (en) | Manufacturing method of semiconductor substrate | |
| JP3585337B2 (en) | Micro device having hollow beam and method of manufacturing the same | |
| JP2583764B2 (en) | Method for manufacturing semiconductor integrated circuit device | |
| JP2610076B2 (en) | Hybrid integrated circuit and manufacturing method thereof | |
| JPH056883A (en) | Method for manufacturing semiconductor substrate | |
| JP3303940B2 (en) | Electrostatic bonding method | |
| JPH02181469A (en) | Manufacturing method of semiconductor substrate | |
| JPS6362252A (en) | Manufacture of dielectric isolation substrate | |
| JPH01230255A (en) | Manufacture of semiconductor substrate | |
| JP2535577B2 (en) | Wafer bonding method | |
| JPH11163124A (en) | Partial soi substrate and its manufacture | |
| JPH0515453U (en) | SOI substrate | |
| JPH077798B2 (en) | Method of manufacturing composite substrate having island regions made of a plurality of materials separated from each other on the same plane |