JPS62213400A - Capacitor type microphone - Google Patents
Capacitor type microphoneInfo
- Publication number
- JPS62213400A JPS62213400A JP5573586A JP5573586A JPS62213400A JP S62213400 A JPS62213400 A JP S62213400A JP 5573586 A JP5573586 A JP 5573586A JP 5573586 A JP5573586 A JP 5573586A JP S62213400 A JPS62213400 A JP S62213400A
- Authority
- JP
- Japan
- Prior art keywords
- spacer
- diaphragm
- outer peripheral
- vibration
- dividing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 title claims description 6
- 125000006850 spacer group Chemical group 0.000 claims abstract description 76
- 230000002093 peripheral effect Effects 0.000 abstract description 16
- 230000035945 sensitivity Effects 0.000 abstract description 12
- 239000011148 porous material Substances 0.000 abstract description 3
- 239000011888 foil Substances 0.000 abstract description 2
- 239000011104 metalized film Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
Landscapes
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はコンデンサ形(エレクトレット形又はバンクエ
レクトレット形を含む)マイクロホンに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a condenser type (including electret type or bank electret type) microphone.
コンデンサを成す振動板と固定背極とをスペーサを介し
て対面させたマイクロホンにおいて、スペーサを外周囲
スペーサ部分とその内側の分割用スペーサ部分とで構成
し、振動板が実質的に分割振動を起こしてレスポンスの
高域限界が上昇し、また振動板と背極とが静電吸引力に
よって接触するのを分割用スペーサ部分で防止すること
により、極間間隔を減小させて、感度を高めたものであ
る。In a microphone in which a diaphragm forming a capacitor and a fixed back electrode face each other via a spacer, the spacer is composed of an outer peripheral spacer part and a dividing spacer part inside the diaphragm, and the diaphragm substantially causes divided vibration. This increases the high-frequency limit of the response, and by preventing the diaphragm and back electrode from coming into contact with each other due to electrostatic attraction using the dividing spacer, the distance between the electrodes is reduced and sensitivity is increased. It is something.
コンデンサ形マイクロホン(エレクトレフト形又はバッ
クエレクトレフト形を含む)の感度を増強するには、コ
ンデンサを形成する振動板と背極とめ間のバイアス直流
電圧を高くしたり、これらの極板間の対向距離を小さく
したり、振動板の面積を大きくする必要がある。In order to increase the sensitivity of a capacitor type microphone (including electric left type or back electric left type), it is possible to increase the bias DC voltage between the diaphragm and the back plate that form the capacitor, or to increase the bias DC voltage between these plates. It is necessary to reduce the distance or increase the area of the diaphragm.
バイアス電圧を増加させるのは、絶縁の問題及び内蔵電
源(電池)の問題で限界がある。また極板間距離を小さ
くしたり、振動板面積を増大させたり、或いは上述のよ
うにバイアス電圧を増大させると、振動板(膜)と背極
との間の静電吸引力が増大する。・このため振動板が背
極と接触しないように、振動板又は振動膜の面方向のテ
ンションを増強する必要が生じ、限られた外形形状のマ
イクロホンでは製造が困難となる。There are limits to increasing the bias voltage due to insulation problems and built-in power supply (battery) problems. Furthermore, when the distance between the electrode plates is reduced, the area of the diaphragm is increased, or the bias voltage is increased as described above, the electrostatic attractive force between the diaphragm (membrane) and the back electrode increases. - For this reason, it is necessary to increase the tension in the plane of the diaphragm or diaphragm so that the diaphragm does not come into contact with the back electrode, making it difficult to manufacture a microphone with a limited external shape.
また振動板面積を大きくしたり、テンションを増大させ
ると、高域周波数の感度が低下し、帯域が狭くなる問題
が生ずる。Furthermore, if the area of the diaphragm is increased or the tension is increased, the sensitivity of high frequencies decreases, resulting in a problem that the band becomes narrower.
本発明はこれらの問題にかんがみ、簡単な構成で高感度
でしかも広帯域の周波数特性が得られるコンデンサ式マ
イクロホンを得ることを目的とする。In view of these problems, it is an object of the present invention to provide a condenser microphone having a simple configuration, high sensitivity, and providing broadband frequency characteristics.
本発明のコンデンサマイクロホンは、第1A図、第2図
又は第3図に示すように、コンデンサを形成する振動板
lと固定背極4とをスペーサ2を介して対面させた構成
において、上記振動板1が分割振動を起こすように上記
スペーサを、振動面の外周囲を囲む外周囲スペーサ部分
2aと、この外周囲スペーサ部分の内側に配置された分
割用スペーサ部分2bとで構成したものである。As shown in FIG. 1A, FIG. 2, or FIG. The spacer is composed of an outer spacer part 2a surrounding the outer periphery of the vibration surface and a splitting spacer part 2b arranged inside this outer spacer part so that the plate 1 causes split vibration. .
〔作 用〕
分割振動を生じさせることにより、レスポンス−周波数
特性の高域限界が上昇する。また分割用スペーサ部分の
介在により極間放電が防止されるので、スペーサ厚をよ
り薄<シて感度を高めることが可能となる。[Function] By generating split vibration, the high-frequency limit of the response-frequency characteristic increases. Furthermore, since interelectrode discharge is prevented by the presence of the dividing spacer portion, it is possible to make the spacer thinner and increase sensitivity.
第1A図はコンデンサ形マイクロホンの原理的構成を示
す断面図で、第1B図は極板間のスペーサの平面図であ
る。周知のようにこのタイプのマイクロホンは振動板l
に金属箔又はメタライズドフィルムを用い、スペーサ2
を挾んで多数の気孔3を有する背極4(固定側)と対向
配置させた構成になっている。振動板1と背極4との間
にはバイアス直流電圧Eが印加され、振動板1の振動に
伴なう背極4の電位変化をマイクロホン出力として取出
す。FIG. 1A is a sectional view showing the basic structure of a condenser microphone, and FIG. 1B is a plan view of a spacer between electrode plates. As is well known, this type of microphone has a diaphragm l.
spacer 2 using metal foil or metallized film.
The structure is such that it is placed opposite to a back electrode 4 (fixed side) having a large number of pores 3 in between. A bias DC voltage E is applied between the diaphragm 1 and the back electrode 4, and the change in potential of the back electrode 4 accompanying the vibration of the diaphragm 1 is extracted as a microphone output.
スペーサ2は第1B図に示すように外周囲スペーサ部分
2aを備え、その厚みにより振動板1と背極4との間を
一定間隔に保持している。外周囲スペーサ部分2aによ
って囲まれた領域の内部に分割用スペーサ部分2bが更
に設けられている。As shown in FIG. 1B, the spacer 2 includes an outer peripheral spacer portion 2a, and its thickness maintains a constant distance between the diaphragm 1 and the back electrode 4. A dividing spacer portion 2b is further provided inside the area surrounded by the outer peripheral spacer portion 2a.
第1B図の例では、スペーサ部分2bは外周囲スペーサ
部分2aに連らなり、振動板工の振動領域をほぼ2分す
る位置に形成されている。このようなスペーサ2は一枚
のポリエステル、ポリイミド、スチロールのような絶縁
物フィルムを打抜き又はエツチングすることにより作る
ことができる。In the example of FIG. 1B, the spacer portion 2b is continuous with the outer peripheral spacer portion 2a, and is formed at a position that approximately bisects the vibration region of the diaphragm. Such a spacer 2 can be made by punching or etching a piece of insulating film such as polyester, polyimide, or styrene.
分割用スペーサ部分2bが有るためスペーサ2の厚みを
従来より大巾に薄くしても極間放電は起こらない。この
ため極間静電容量が実質的に増加し、感度が高まる。ま
た感度が上昇した分だけS/Nが良くなる。Since there is a dividing spacer portion 2b, no interpolar discharge occurs even if the thickness of the spacer 2 is made much thinner than before. This substantially increases interelectrode capacitance and increases sensitivity. Furthermore, the S/N ratio improves by the amount that the sensitivity increases.
またスペーサ2は振動板1と背極4との間の静電吸引力
により挾み込まれていて、外周囲スペーサ部分2a及び
分割用スペーサ部分2bは振動板1と密着されている。Further, the spacer 2 is sandwiched between the diaphragm 1 and the back electrode 4 by electrostatic attraction, and the outer peripheral spacer portion 2a and the dividing spacer portion 2b are in close contact with the diaphragm 1.
従って振動板1の振動面積は分割用スペーサ部分2bに
より二部され、分割された各部において振動板1が分割
振動する。つまり振動板lのスチフネスが高所的に増加
し、結果的にマイクロホンの出力周波数特性の高域限界
が伸び、より広帯域となる。なおコンデンサ形マイクロ
ホンは原理的に低域特性が良いので、振動板1の分割振
動により低域特性が幾分劣化しても、増巾系においてこ
れを電気的に補償できる。Therefore, the vibrating area of the diaphragm 1 is divided into two parts by the dividing spacer portion 2b, and the diaphragm 1 vibrates dividedly in each divided part. In other words, the stiffness of the diaphragm l increases as the height increases, and as a result, the high-frequency limit of the output frequency characteristic of the microphone increases, resulting in a wider band. Note that since a capacitor type microphone has good low-frequency characteristics in principle, even if the low-frequency characteristics deteriorate somewhat due to the divided vibration of the diaphragm 1, this can be electrically compensated for in the amplification system.
スペーサ2は振動板1と背極4との間で静電吸引力で圧
着されているので、スペーサ2を背極4の表面側に接着
剤で固定する必要は無い。必要があれば接着固定しても
よい。分割用スペーサ部分2bは背極4の気孔3を避け
た位置に形成するのが良い。Since the spacer 2 is pressed between the diaphragm 1 and the back electrode 4 by electrostatic attraction, there is no need to fix the spacer 2 to the surface of the back electrode 4 with an adhesive. If necessary, it may be fixed with adhesive. The dividing spacer portion 2b is preferably formed at a position avoiding the pores 3 of the back electrode 4.
コンデンサ形マイクロホンと称して知られている第2図
又は第3図のエレクトレフト形にも本発明を適用できる
。第2図では、電荷を永久固定したエレクトレットフィ
ルムを振動板1として用い、第1A図と同様にスペーサ
2を介して背極4と対面させた構造になっている。バイ
アス電圧の印加は不要である。第3図はバックエレクト
レット形と称されていて、背極4の表面にエレクトレッ
トフィルム5を固着し、スペーサ2を挾んでメタライズ
ド振動板1を対面させた構成になっている。The present invention can also be applied to the electric left type microphone shown in FIG. 2 or 3, which is known as a condenser type microphone. In FIG. 2, an electret film with permanently fixed charges is used as the diaphragm 1, and the structure is such that it faces the back electrode 4 with a spacer 2 in between, as in FIG. 1A. No bias voltage needs to be applied. The structure shown in FIG. 3 is called a back electret type, in which an electret film 5 is fixed to the surface of a back electrode 4, and a metallized diaphragm 1 faces the metallized diaphragm 1 with a spacer 2 in between.
これらの第2図又は第3図のエレクトレフト形マイクロ
ホンにおいても、第1B図のようなスペーサを用いるこ
とにより、前記と同様な効果が得られる。なおエレクト
レフト形又はバックエレクトレット形では、極間容量が
大きくなると、FET入力アンプの入力容量との分圧比
が変って、結果的に感度が高まる。In the electric left type microphone shown in FIG. 2 or 3, the same effect as described above can be obtained by using a spacer as shown in FIG. 1B. Note that in the electret type or back electret type, when the interelectrode capacitance increases, the voltage division ratio with respect to the input capacitance of the FET input amplifier changes, resulting in increased sensitivity.
第4図はスペーサ2の各種の変形例を示す。Aは分割用
スペーサ部分2bを外周囲スペーサ部分2aの一辺から
振動領域のほぼ中央まで突出させた例で、Bは外周囲ス
ペーサ部分2aの対向2辺から一対の分割用スペーサ部
分2bを突出させた例である。何れの場合も外周囲スペ
ーサ部分2aで囲まれた振動領域がほぼ二部され、各部
で分割振動が起こる。FIG. 4 shows various modifications of the spacer 2. A is an example in which the dividing spacer portion 2b is projected from one side of the outer peripheral spacer portion 2a to approximately the center of the vibration region, and B is an example in which a pair of dividing spacer portions 2b are projected from two opposing sides of the outer peripheral spacer portion 2a. This is an example. In either case, the vibration region surrounded by the outer peripheral spacer portion 2a is divided into approximately two parts, and divided vibration occurs in each part.
第4図Cは、分割用スペーサ部分2bを外周囲スペーサ
部分2aよりも小領域を囲む方形とし、このスペーサ部
分2aと外周囲部分2aとを連結部2Cで結合したもの
である。振動面は二つの周辺部分と中央部分との三つに
分けられる。Dは一本の分割用スペーサ部分2bで振動
領域を不均等に二部した例である。Eは三角コーナ一部
が分割されるように斜めの分割用スペーサ部2bを設け
た例である。In FIG. 4C, the dividing spacer portion 2b is made into a rectangular shape surrounding a smaller area than the outer peripheral spacer portion 2a, and the spacer portion 2a and the outer peripheral portion 2a are connected by a connecting portion 2C. The vibration surface is divided into three parts: two peripheral parts and a central part. D is an example in which the vibration region is unevenly divided into two parts by one dividing spacer portion 2b. E is an example in which a diagonal dividing spacer portion 2b is provided so that a portion of the triangular corner is divided.
第4図Fは外周囲スペーサ部分2aの内部に方形の小領
域を囲む分割用スペーサ部分2bを設けた例である。こ
の例では外周囲スペーサ部分2aと分割用スペーサ部分
2bとが連続していないので、組立時には分割用スペー
サ部分2bを背極4の表面に接着固定する。振動面は内
側領域と外側領域とで二部される。FIG. 4F shows an example in which a dividing spacer portion 2b surrounding a small rectangular region is provided inside the outer peripheral spacer portion 2a. In this example, since the outer peripheral spacer portion 2a and the dividing spacer portion 2b are not continuous, the dividing spacer portion 2b is adhesively fixed to the surface of the back electrode 4 during assembly. The vibration surface is divided into two parts, an inner region and an outer region.
第4図Gは点状の分割用スペーサ部分2bを設けた例で
、振動面は面積的には二部されていないが、スペーサ部
分2bを節として振動板1が分割振動を起こすので、実
質的な振動面分割であり、同様な作用効果が得られる。Fig. 4G shows an example in which a dot-shaped dividing spacer portion 2b is provided, and although the vibration surface is not divided into two parts in terms of area, the diaphragm 1 causes divided vibration using the spacer portion 2b as a node, so This is a similar vibration plane division, and similar effects can be obtained.
なお振動板1の外形は、四角形の他に丸形でも多角形で
も良く、スペーサ2の分割形状は振動板1の外形に合わ
せて種々考えられる。Note that the outer shape of the diaphragm 1 may be round or polygonal in addition to the rectangular shape, and various division shapes of the spacer 2 can be considered depending on the outer shape of the diaphragm 1.
第5図は第4図Fのスペーサを用いた場合のマイクロホ
ンの周波数特性であり、図示するように分割用スペーサ
部分が無い場合(点線)と比べて高域限界は高くなり、
感度も向上する。第1B図、第4図A−E、Gのスペー
サ2を用いた場合もほぼ同様な周波数特性が得られる。FIG. 5 shows the frequency characteristics of the microphone when the spacer shown in FIG.
Sensitivity is also improved. Approximately similar frequency characteristics can be obtained when the spacers 2 shown in FIG. 1B and FIGS. 4A to 4E and G are used.
本発明は上述の如く、コンデンサマイクロホンの極間ス
ペーサ2を、振動面を囲む外周囲スペーサ部分2aとそ
の内側の分割用スペーサ部分2bとで構成したので、振
動板1のスチフネスが局所的に高まり、レスポンスの高
域限界が上昇してより広帯域な特性が得られる。また極
間の静電吸引力により振動板1が背極4と接触して放電
するのが、分割用スペーサ部分2bにより防止されるの
で、スペーサ厚をより薄くして極間距離を小さくし、こ
れによって極間容量を増加させて高感度、高出力を得る
ことができ、相対的にS/Nも良くなる。As described above, in the present invention, the spacer 2 between the poles of the condenser microphone is constituted by the outer peripheral spacer portion 2a surrounding the vibration surface and the dividing spacer portion 2b inside thereof, so that the stiffness of the diaphragm 1 is locally increased. , the high-frequency limit of the response rises and wider band characteristics are obtained. In addition, the dividing spacer portion 2b prevents the diaphragm 1 from coming into contact with the back electrode 4 due to the electrostatic attraction between the electrodes and causing discharge, so the spacer thickness is made thinner and the distance between the electrodes is reduced. As a result, the capacitance between the electrodes can be increased, high sensitivity and high output can be obtained, and the S/N ratio can also be relatively improved.
第1A図は本発明の実施例のコンデンサ形マイクロホン
の要部断面図、第1B図はスペーサの平面図、第2図及
び第3図は別の実施例を示すニレトドレフト形マイクロ
ホンの要部断面図、第4図A−Gはスペーサの変形例を
示す平面図、第5図は周波数特性図である。
なお図面に用いた符号において、
1−一−−−・−・−・−一−−−−振動板2・−−−
−−・−・−・−スペーサ
2a・−・−一一一−−−−−−−・外周囲スペーサ部
分2b・−−−−一−−−−−−−・・−分割用スペー
サ部分3−−−−−−−−−−−−−−・−−−−・気
孔4・−・・−・−・−・−・−背極
5−・−・−・・−−−−−−・・−エレトトレソトフ
イルムである。FIG. 1A is a sectional view of a main part of a condenser microphone according to an embodiment of the present invention, FIG. 1B is a plan view of a spacer, and FIGS. 2 and 3 are sectional views of a main part of a Nireto drift type microphone showing another embodiment , FIGS. 4A to 4G are plan views showing modified examples of the spacer, and FIG. 5 is a frequency characteristic diagram. In addition, in the symbols used in the drawings, 1-1----・-----1-----Vibration plate 2・----
---・-----Spacer 2a・---11-------Outer spacer part 2b・-----1-------------Dividing spacer part 3−−−−−−−−−−−−−−・−−−・Stomata 4・−・・−・−・−・−・−Back electrode 5−・−・−・・−−−− --...-It is an eletotore soto film.
Claims (1)
介して対面させ、上記振動板が分割振動を起こすように
上記スペーサを、振動面の外周囲を囲む外周囲スペーサ
部分と、この外周囲スペーサ部分の内側に配置された分
割用スペーサ部分とで構成したコンデンサ形マイクロホ
ン。A diaphragm forming a capacitor and a fixed back electrode are made to face each other via a spacer, and the spacer is arranged so that the diaphragm causes divided vibration, and an outer periphery spacer portion surrounding the outer periphery of the vibration surface, and this outer periphery spacer. A condenser microphone consisting of a dividing spacer section placed inside the section.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5573586A JPS62213400A (en) | 1986-03-13 | 1986-03-13 | Capacitor type microphone |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5573586A JPS62213400A (en) | 1986-03-13 | 1986-03-13 | Capacitor type microphone |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62213400A true JPS62213400A (en) | 1987-09-19 |
Family
ID=13007110
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5573586A Pending JPS62213400A (en) | 1986-03-13 | 1986-03-13 | Capacitor type microphone |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62213400A (en) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003018696A (en) * | 2001-06-29 | 2003-01-17 | Azden Corp | Electret capacitor microphone |
JP2010141762A (en) * | 2008-12-15 | 2010-06-24 | Audio Technica Corp | Electret condenser microphone system |
JP4924853B1 (en) * | 2011-02-23 | 2012-04-25 | オムロン株式会社 | Acoustic sensor and microphone |
JP2012147115A (en) * | 2011-01-07 | 2012-08-02 | Omron Corp | Acoustic transducer and microphone using the same |
WO2012114539A1 (en) * | 2011-02-23 | 2012-08-30 | オムロン株式会社 | Acoustic sensor and microphone |
US8351625B2 (en) | 2011-02-23 | 2013-01-08 | Omron Corporation | Acoustic sensor and microphone |
CN104350767A (en) * | 2012-05-31 | 2015-02-11 | 欧姆龙株式会社 | Electrostatic capacity sensor, acoustic sensor, and microphone |
JP2015056881A (en) * | 2013-09-13 | 2015-03-23 | オムロン株式会社 | Acoustic transducer and microphone |
US9380380B2 (en) | 2011-01-07 | 2016-06-28 | Stmicroelectronics S.R.L. | Acoustic transducer and interface circuit |
US9456274B2 (en) | 2012-11-14 | 2016-09-27 | Stmicroelectronics S.R.L. | Digital electronic interface circuit for an acoustic transducer, and corresponding acoustic transducer system |
US9609410B2 (en) | 2014-02-20 | 2017-03-28 | Stmicroelectronics S.R.L. | Processing circuit for a multiple sensing structure digital microelectromechanical sensor having a broad dynamic range and sensor comprising the processing circuit |
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-
1986
- 1986-03-13 JP JP5573586A patent/JPS62213400A/en active Pending
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JP2012175509A (en) * | 2011-02-23 | 2012-09-10 | Omron Corp | Acoustic sensor and microphone |
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US9807500B2 (en) | 2012-11-14 | 2017-10-31 | Stmicroelectronics S.R.L. | Digital electronic interface circuit for an acoustic transducer, and corresponding acoustic transducer system |
US9456274B2 (en) | 2012-11-14 | 2016-09-27 | Stmicroelectronics S.R.L. | Digital electronic interface circuit for an acoustic transducer, and corresponding acoustic transducer system |
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US9609410B2 (en) | 2014-02-20 | 2017-03-28 | Stmicroelectronics S.R.L. | Processing circuit for a multiple sensing structure digital microelectromechanical sensor having a broad dynamic range and sensor comprising the processing circuit |
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