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JPS6221558U - - Google Patents

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Publication number
JPS6221558U
JPS6221558U JP11275685U JP11275685U JPS6221558U JP S6221558 U JPS6221558 U JP S6221558U JP 11275685 U JP11275685 U JP 11275685U JP 11275685 U JP11275685 U JP 11275685U JP S6221558 U JPS6221558 U JP S6221558U
Authority
JP
Japan
Prior art keywords
diffusion layer
region
semiconductor substrate
gate electrode
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11275685U
Other languages
Japanese (ja)
Other versions
JPH0513016Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1985112756U priority Critical patent/JPH0513016Y2/ja
Publication of JPS6221558U publication Critical patent/JPS6221558U/ja
Application granted granted Critical
Publication of JPH0513016Y2 publication Critical patent/JPH0513016Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本考案の一実施例の平面図、第２図は
従来のＭＩＳ型電界効果トランジスタの平面図で
ある。 １０……素子間分離領域、１１，２１……ソー
ス拡散層領域、１２，２２……ドレイン拡散層領
域、１３，２３，２３Ａ，２３Ｂ……ゲート電極
、１４，１５，１６，２４，２５，２６……金属
配線、１７，２７……接続孔、１８……接続配線
、２８……割れ。 FIG. 1 is a plan view of an embodiment of the present invention, and FIG. 2 is a plan view of a conventional MIS field effect transistor. 10... Inter-element isolation region, 11, 21... Source diffusion layer region, 12, 22... Drain diffusion layer region, 13, 23, 23A, 23B... Gate electrode, 14, 15, 16, 24, 25, 26... Metal wiring, 17, 27... Connection hole, 18... Connection wiring, 28... Crack.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 一導電型半導体基板と該半導体基板上に設けら
れた反対導電型のソース拡散層領域及びドレイン
拡散層領域と該ソース及びドレイン拡散層領域間
にゲート絶縁膜を介して設けられたゲート電極と
を有するＭＩＳ型電界効果トランジスタにおいて
、前記ゲート電極とトランジスタ領域を画定する
素子間分離領域上に設けられた接続配線とにより
電気的に閉鎖ループが形成されていることを特徴
とするＭＩＳ型電界効果トランジスタ。 A semiconductor substrate of one conductivity type, a source diffusion layer region and a drain diffusion layer region of the opposite conductivity type provided on the semiconductor substrate, and a gate electrode provided between the source and drain diffusion layer regions with a gate insulating film interposed therebetween. An MIS type field effect transistor having an electrically closed loop formed by the gate electrode and a connection wiring provided on an inter-element isolation region defining a transistor region. .
JP1985112756U 1985-07-22 1985-07-22 Expired - Lifetime JPH0513016Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1985112756U JPH0513016Y2 (en) 1985-07-22 1985-07-22

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1985112756U JPH0513016Y2 (en) 1985-07-22 1985-07-22

Publications (2)

Publication Number Publication Date
JPS6221558U true JPS6221558U (en) 1987-02-09
JPH0513016Y2 JPH0513016Y2 (en) 1993-04-06

Family

ID=30993924

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1985112756U Expired - Lifetime JPH0513016Y2 (en) 1985-07-22 1985-07-22

Country Status (1)

Country Link
JP (1) JPH0513016Y2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02110943A (en) * 1988-10-19 1990-04-24 Nec Corp Field-effect transistor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5045574A (en) * 1973-08-24 1975-04-23
JPS5594065U (en) * 1978-12-22 1980-06-30
JPS6092667A (en) * 1983-10-27 1985-05-24 Fujitsu Ltd Mis transistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5045574A (en) * 1973-08-24 1975-04-23
JPS5594065U (en) * 1978-12-22 1980-06-30
JPS6092667A (en) * 1983-10-27 1985-05-24 Fujitsu Ltd Mis transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02110943A (en) * 1988-10-19 1990-04-24 Nec Corp Field-effect transistor

Also Published As

Publication number Publication date
JPH0513016Y2 (en) 1993-04-06

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