JPS62149118A - Vapor growth method - Google Patents

Abstract

PURPOSE:To prevent slip of a substrate with a little energy, by heating a carrier gas introduced into a reaction chamber in the course of heating a susceptor in order to heat the surface of the substrate located on the susceptor. CONSTITUTION:A substrate 7 is located on a susceptor 6 to be heated within a reaction chamber 1. A carrier gas and a reaction gas are introduced into the reaction chamber 1 for carrying out vapor growth. During this process, the carrier gas is heated in the course of raising the temperature of the susceptor 6. The heated carrier gas collides against the surface of the substrate 7 and heats the same. In this manner, slip of the substrate 7 can be prevented with a little energy.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a vapor phase growth method in, for example, a semiconductor manufacturing process.

[Technical background of the invention and its problems]

Generally, in the vapor phase growth method for semiconductors, while heating the substrate from room temperature to the vapor growth temperature (for example, 1160 degrees Celsius), the substrate changes from an elastic state to a plastic state, and the silicon In the case of (8i), the 0 elastic-plastic region is approximately 45
Range of 0 to 950°C - 1 rumor M h ? seven
and h right←1Δ Vdan 汀F←revised 11brr
i! In a high temperature range, the blind hole becomes plastic. In the thermodynamically unstable elastic region during such changes, if the temperature distribution on the surface of the substrate is uniform, the self-defense of the substrate and the gas phase formed on it will be reduced. Crystal defects called slips do not occur in the grown film, but
When the difference in temperature distribution within this plane becomes several tens of degrees Celsius or more, slip occurs. Similarly, when the temperature of the substrate is lowered from a high temperature range where it is in a plastic state to room temperature, slipping may occur if the temperature distribution is poor in the intermediate elastic-plastic range.

Conventionally, as a means of preventing the occurrence of slip in this type of vapor phase growth method, in order to uniformize the temperature distribution on the surface side of the substrate placed on the susceptor, the surface of the substrate is actively irradiated using an infrared lamp. heating or
As disclosed in Japanese Patent No. 71N7, a reaction gas is heated to suppress the temperature difference between the front and back surfaces of a substrate during vapor phase growth.

However, in all of the conventional methods described above, a large amount of energy is required for auxiliary heating of the substrate surface, and in the case of heating the reaction gas to 1%, it is necessary to heat the reaction gas at a temperature below the thermal decomposition temperature of the reaction gas. Therefore, heating control is extremely difficult, but if you heat the 5 reaction gas, the reaction will be generated on the nozzle facing into the reaction chamber or on the wall of the reaction chamber! ! However, there was a problem in that things tend to become easily washed away, which is not desirable.

[Purpose of the invention]

As a result of extensive research under the above circumstances, the present invention has found that since the substrate is in a completely plastic state during vapor phase growth, a slight difference in temperature will not cause slip, and that the susceptor This method was developed based on the fact that there is relatively less slip when the temperature is lowered than when the temperature is raised, and it is easy to control and prevents slipping without causing reaction products to adhere to the nozzle or the reaction chamber walls. The purpose of this invention is to provide a vapor phase growth method that can reliably prevent the occurrence of.

[Summary of the Invention] In order to achieve the above-mentioned object, the present invention provides a method for performing vapor phase growth by introducing a carrier gas and a reaction gas into a reaction chamber in which a substrate is placed on a heated susceptor. The carrier gas is heated during the temperature rise of the susceptor, and with this structure, the surface of the substrate is heated by the heated carrier gas during the temperature rise of the susceptor. By heating, it is possible to prevent the occurrence of slip with a small amount of energy, and there is no increase in the adhesion of reaction products to the walls of the reaction chamber, etc.
In addition, carrier gas Q heating control (compared to the case of heating a reaction gas) can be easily carried out.

[Embodiments of the invention]

Hereinafter, five aspects of the present invention will be explained with reference to an illustrated embodiment.

FIG. 1 is a schematic diagram of an apparatus for carrying out the vapor phase growth method according to the present invention. In FIG. 1, 1 is a reaction chamber, and 2 is an exhaust port. In the reaction chamber 1, a carrier gas and reaction gas introduction passage 4 passes through the hollow rotating shaft 3 and is connected to a nozzle 4a. The hollow rotating shaft 3 is provided with a susceptor 6 that is heated by a high-frequency heating coil 5.
A substrate 7 made of silicon is placed thereon. Reference numeral 8 in FIG. 1 denotes a heating device installed in the middle of the gas introduction passage 4, which can heat the dried gas introduced into the reaction chamber 1 during heating of the susceptor 6 by the high-frequency heating coil 5. The side legs are like that.

That is, the heating device 8 heats the susceptor 6 with the high-frequency heating coil 5 to heat the substrate 7 from room temperature to the vapor phase growth method, at least in the temperature range where the substrate 7 is in an elastic-plastic state. , the carrier gas introduced into the reaction chamber 1 is heated, and the heated carrier gas is applied to the surface of the substrate &7 to heat the surface so that the temperature distribution of the substrate 7 becomes uniform. Adashi,
During vapor phase growth when the substrate 7 is in a plastic state, the carrier gas is heated and the temperature distribution of the substrate 7 is adjusted. By lowering the temperature while keeping it more uniform, the occurrence of slip can be suppressed more reliably.

〔Effect of the invention〕

As is clear from the above explanation, according to the present invention, the carrier gas introduced into the reaction chamber is heated during heating of the substrate to heat the surface of the substrate placed on the susceptor, so less energy is required. This has excellent effects in that it is possible to prevent the occurrence of slippage of the substrate, it also increases the adhesion of reaction products to the inner walls of the reaction chamber, and it is also possible to easily control heating.

[Brief explanation of drawings]

FIG. 1 is a schematic explanatory diagram showing one embodiment of an apparatus for carrying out the vapor phase growth method according to the present invention. DESCRIPTION OF SYMBOLS 1... Reaction chamber, 3... Hollow rotating shaft, 4... Gas introduction passage, 4a... Nozzle, 5... High frequency heating coil. 6... Susceptor, 7... Substrate, 8... Heating device.

Claims (1)

[Claims] A vapor phase method characterized in that when performing vapor phase growth by introducing a carrier gas and a reaction gas into a reaction chamber in which a substrate is placed on a susceptor to be heated, the carrier gas is heated during the temperature rise of the susceptor. How to grow.