JPS6186815A - Minute pressure controller - Google Patents
Minute pressure controllerInfo
- Publication number
- JPS6186815A JPS6186815A JP20815884A JP20815884A JPS6186815A JP S6186815 A JPS6186815 A JP S6186815A JP 20815884 A JP20815884 A JP 20815884A JP 20815884 A JP20815884 A JP 20815884A JP S6186815 A JPS6186815 A JP S6186815A
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- pressure control
- gas
- control device
- valve
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D16/00—Control of fluid pressure
- G05D16/20—Control of fluid pressure characterised by the use of electric means
- G05D16/2006—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means
- G05D16/2013—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means using throttling means as controlling means
- G05D16/2026—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means using throttling means as controlling means with a plurality of throttling means
- G05D16/2033—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means using throttling means as controlling means with a plurality of throttling means the plurality of throttling means being arranged in series
Landscapes
- Physics & Mathematics (AREA)
- Fluid Mechanics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Automation & Control Theory (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Control Of Fluid Pressure (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明はウェハの温産制御する方法及装置に係り、導入
ガスの微小圧力制御装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a method and apparatus for controlling hot production of wafers, and more particularly to a micropressure control apparatus for introduced gas.
従来、ガス伝導によるウェハ温度側！ｉ！１７ ￥ｐ
貯では、ガスを可変弁へ導きガス留めへ送給し、圧力制
御装置をガス留め中の圧力を監視するためにガス留め上
の圧力変換器に接続し、かつ圧カフ制御するための可変
弁に接続してガス圧力の制御を行なっている（特開昭５
８−３２４１０号公報）。Conventionally, wafer temperature side due to gas conduction! i! 17 ¥p
In the reservoir, gas is guided to a variable valve and delivered to the gas retainer, a pressure control device is connected to a pressure transducer on the gas retainer to monitor the pressure in the gas retainer, and a variable valve is used to control the pressure cuff. The gas pressure is controlled by connecting it to the
8-32410).
しかし、導入ガス社がＩ ＳＣＣＭ程度のわずかな微小
流量の場合、従来の方法では、ガス圧力を一定に制御す
ることがむずかしく、流値を精度よく制御できないとい
う問題があった。However, when the gas flow rate is as small as ISCCM, it is difficult to control the gas pressure to a constant level using the conventional method, and the flow value cannot be controlled accurately.
本発明の目的は、ウェハ電極間に４入するガスの圧力を
一定化する微小圧力制御装置を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a micro-pressure control device that stabilizes the pressure of gas introduced between wafer electrodes.
基析ト基板支持台間のガスによる熱の伝達のために導入
するガスがわずかな場合、このような微小流量において
はガス圧力を一定に制御することが必要である。最終ガ
ス圧力ヲ１．５〜５Ｔｏｒｒに設定す７．Ｉには１段の
減圧ではむずかしいため。When a small amount of gas is introduced to transfer heat between the substrate and the substrate support, it is necessary to control the gas pressure to a constant value at such a small flow rate. Set the final gas pressure to 1.5 to 5 Torr7. For I, it is difficult to reduce the pressure in one stage.
絞り弁にまり流社ン制御しバッファ室を２個設け２段階
の減圧によって圧力を制御するものである。これにより
圧力の制御性を高めることができ微小圧力が設定できる
。The flow is controlled by a throttle valve, two buffer chambers are provided, and the pressure is controlled by two-stage pressure reduction. This makes it possible to improve pressure controllability and set a minute pressure.
〔発明の実施例〕
本発明の一実施例を第１図の本発明による微小圧力制御
装置の模式図、第２図の第１図のタイミング千ヤードに
ついて説明する。[Embodiment of the Invention] An embodiment of the present invention will be described with reference to FIG. 1, which is a schematic diagram of a micro-pressure control device according to the present invention, and FIG. 2, which is a timing diagram of FIG.
下記の構成の微小圧力制御装置により圧力制御されたガ
スは真空容器１内の下部電極２ウェハ４間に導入される
。ガス洪給源であるガスボンベ５．圧力調整弁６から送
り州されたガス（矢印）＆ｉ、絞り弁７ （Ｃ，）、空
気式開閉ノクルプ８ （ＡＨ） 、 ハｙ ７７？
、 ９ （Ｖｌ）、 ｕ’ｉスイ７＋１０（Ｖｓ）か
ら匝ろ第１の圧力制御機構部を経て直列に接続された絞
り弁１１（ＣｔＬ空気式開閉ハルフ１２ （Ａｚ）、
ハフ ７ ｙ室１３ （Ｖ２） 、 タイアフラム箕空
計１４（ＤＧ）から成る第２の圧力制御機構部Ｗ導かれ
る。Gas whose pressure is controlled by a micro pressure control device having the following configuration is introduced between the lower electrode 2 and the wafer 4 in the vacuum container 1. Gas cylinders are a source of gas flooding 5. Gas sent from pressure regulating valve 6 (arrow) &i, throttle valve 7 (C,), pneumatic opening/closing valve 8 (AH), Hi 77?
, 9 (Vl), throttle valve 11 (CtL pneumatic opening/closing half 12 (Az)) connected in series from u'i switch 7+10 (Vs) via the first pressure control mechanism section
A second pressure control mechanism section W consisting of a huff 7y chamber 13 (V2) and a tire flamm gage 14 (DG) is guided.
これら２つの圧力制御機構部で減圧されたガス圧力は、
真空スインチ１０．ダイアフラム真空計１４．で検出さ
れる。The gas pressure reduced by these two pressure control mechanisms is
Vacuum sinch 10. Diaphragm vacuum gauge14. Detected in
ＩＩＪｍｆＨ７は、真空スイッチ１０及びダイアフラム
真室計１４に接続されているメータリレー１６からの出
力信号により、空気式開閉ノくルプＡ、及びＡＩをコン
トロールする。IIJmfH7 controls the pneumatic opening/closing knob A and AI by the output signal from the meter relay 16 connected to the vacuum switch 10 and the diaphragm true meter 14.
下部電極２と微小圧力制御装置の間には空気式開閉バル
ブ１Ｂ（Ａ４）が設ｒされ、ガスの送給、停止を行なう
。A pneumatic opening/closing valve 1B (A4) is installed between the lower electrode 2 and the minute pressure control device to supply and stop gas.
以上の構成により本装置においての圧力設定は０〜９．
９９ Ｔｏｒｒ の範囲ンもつメータリレーの２接点を
可変させることで最終ガス圧力を年、意の圧力箭囲に設
定することができる。ここでは０５〜５ Ｔｏｒｒの圧
力を設定する場合を例に説明する。With the above configuration, the pressure settings in this device are 0 to 9.
By varying the two contacts of the meter relay, which has a range of 99 Torr, the final gas pressure can be set within the desired pressure range. Here, the case where the pressure is set at 05 to 5 Torr will be explained as an example.
本微小圧力制御装置では、元圧（０，２ｋｇ／ｍ２）を
２段ＦＪＫ減圧する上でバクファ’Ｚ９（Ｖ＋）内ガス
圧力を５０Ｔｏｒｒ、バク７７室１３ｒ Ｖ、 ）内ガ
ス圧力をｏ、 ５〜３ Ｔｏｒｒ Ｖｒ前制御る。各Ｃ
，、Ｃ，は流」係％ Ｃｖ ＝ ０．００５ トフンダ
クタンスの小さな絞り弁である。In this micro pressure control device, the original pressure (0.2 kg/m2) is depressurized in two stages by FJK, and the gas pressure in the vacuum chamber Z9 (V+) is set to 50 Torr, and the gas pressure in the vacuum chamber 77 chamber 13r V, ) is set to o, 5 ~3 Torr Vr pre-control. Each C
,,C, is a throttle valve with a small flow coefficient Cv = 0.005.
この時のガス圧力制御における各バルブ、真空スイッチ
、メータリレーのタイミングを第２図に示ス。バッファ
室９（Ｖ、）内のガス圧力真空スイッチ１０により検知
し、この圧力が降下すルト頁空スイ７チ１０がＯＮＬ、
これン受は制御部１７は圧力を上昇させるため空気式開
閉バルブ６乞開く。Figure 2 shows the timing of each valve, vacuum switch, and meter relay in gas pressure control at this time. The gas pressure in the buffer chamber 9 (V) is detected by the vacuum switch 10, and when this pressure decreases, the empty switch 7 10 turns ONL,
In response to this, the control unit 17 opens the pneumatic on-off valve 6 to increase the pressure.
バッファ室１３内のガス圧力を検出するダイアフラム喜
空計１４と接続しているガス圧力範凹設定用としてＬｏ
ｗ −Ｈｉ ｇｈ ｔの２接点出力を有する供給ガス圧
力が不足してくると空気式開閉ノ・シブ１２ｉ開きガス
を供給しバッファ室１３の圧力？高める。除々に圧力が
上昇しＨ−ＯＮになるとスの圧力変動ン抑えパンツＴ室
９．１３内の圧力を常に一定圧力にすることで較終段の
圧力を一定化することができる。Lo is connected to the diaphragm gauge 14 that detects the gas pressure in the buffer chamber 13 for setting the gas pressure range.
When the supply gas pressure becomes insufficient, the pneumatic opening/closing knob 12i opens and supplies gas to reduce the pressure in the buffer chamber 13. enhance When the pressure gradually increases and becomes H-ON, the pressure in the pants T chamber 9.13 is kept at a constant pressure by suppressing the pressure fluctuation, thereby making it possible to keep the pressure at the final stage of the calibration constant.
バフ７ア室９とバッファ室１３の開のＦＥ圧力は５ｏＴ
ｏｒｒ 程であるため元圧との圧力差約１０００’ｆｏ
ｒｒ Ｋ比べ１／２０ となっている。The opening FE pressure of buff 7a chamber 9 and buffer chamber 13 is 5oT.
orr, so the pressure difference with the original pressure is about 1000'fo
rr It is 1/20 compared to K.
そのため流Ｍの１ｔｉＩＪａｌ性は２０倍向上しバッフ
ァ室１３の圧力Ｙ高精度して設定でき、ｌＳＣＣｍ以下
の微少流ｔの場合でも安定した圧力を得ることができる
。Therefore, the 1tiIJal property of the flow M is improved by 20 times, the pressure Y of the buffer chamber 13 can be set with high accuracy, and a stable pressure can be obtained even in the case of a minute flow t of less than 1SCCm.
Ｃ発明の効果〕
本発明を適用すると、ウェハ電極間に導入するガスの圧
力を安定に供給することができるので、ウェハの温度が
安定化でプロセス処理の再現性がよくなる。C Effects of the Invention] When the present invention is applied, the pressure of the gas introduced between the wafer electrodes can be stably supplied, so the temperature of the wafer is stabilized and the reproducibility of the process is improved.
これによりデバイス製品歩留りを向上できる。This can improve device product yield.
第１図は本発明による微小圧力制？ｊｊＪ装置の模式図
、第２図は第１図のタイミングチャート。
７．１１・・絞り手段、
８．１２．１８・・・空気式開閉パルプ。
９．１３・・・ハンフ７ Ｎ％ １０・・・真空スイ
ッチ、１４・・・ダイヤフラム真空計、
１６・・メータリレー、 １７・・・制御部。Figure 1 shows the micro pressure system according to the present invention? A schematic diagram of the jjj device, and FIG. 2 is a timing chart of FIG. 1. 7.11... Squeezing means, 8.12.18... Pneumatic opening/closing pulp. 9.13... Hanfu 7 N% 10... Vacuum switch, 14... Diaphragm vacuum gauge, 16... Meter relay, 17... Control section.
Claims (1)
に、前記管路中に第１段の減圧のためのバッファ室を備
えた第１の圧力制御機構部と、第２段の減圧のためのバ
ッファ室を備えた第２の圧力制御機構部とを直列に設け
たことを特徴とする微小圧力制御装置。 ２、前記第１、第２の圧力制御機構部は、絞り手段開閉
バルブ、バッファ室、被圧力制御流体の圧力を検出する
圧力検出部より構成されることを特徴とする特許請求範
囲第１項の微小圧力制御装置。 ３、被圧力制御流体の圧力設定は、前記第２の圧力制御
機構部の圧力検出部からの出力信号によって所望の２つ
の接点信号を出力する出力手段をもって、第２、第１の
圧力制御機構部の開閉バルブを逐次開閉駆動する制御部
によってなされることを特徴とする特許請求範囲第１項
の微小圧力制御装置。 ４、所望の設定圧力に制御された被圧力制御流体は、前
記制御部からの信号によって微小圧力制御装置の系外に
設けられた管路上の開閉バルブを通し、真空室に供給さ
れることを特徴とする特許請求範囲第１項の微小圧力制
御装置。[Scope of Claims] 1. A first pressure control mechanism unit that connects a vacuum chamber and a gas supply source through a conduit, and includes a buffer chamber for first-stage pressure reduction in the conduit; A micro-pressure control device characterized in that a second pressure control mechanism section provided with a buffer chamber for second-stage pressure reduction is provided in series. 2. The first and second pressure control mechanism sections are comprised of a throttle means opening/closing valve, a buffer chamber, and a pressure detection section that detects the pressure of the pressure-controlled fluid. micro pressure control device. 3. The pressure of the pressure controlled fluid is set by controlling the second and first pressure control mechanisms using an output means that outputs two desired contact signals based on output signals from the pressure detection section of the second pressure control mechanism section. The minute pressure control device according to claim 1, characterized in that the micro pressure control device is controlled by a control section that sequentially opens and closes the on-off valves of the sections. 4. The pressure controlled fluid controlled to a desired set pressure is supplied to the vacuum chamber through an on-off valve on a pipe provided outside the micro pressure control device system in response to a signal from the control section. A micro-pressure control device according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20815884A JPS6186815A (en) | 1984-10-05 | 1984-10-05 | Minute pressure controller |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20815884A JPS6186815A (en) | 1984-10-05 | 1984-10-05 | Minute pressure controller |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6186815A true JPS6186815A (en) | 1986-05-02 |
Family
ID=16551610
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20815884A Pending JPS6186815A (en) | 1984-10-05 | 1984-10-05 | Minute pressure controller |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6186815A (en) |
Cited By (16)
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|---|---|---|---|---|
| JP2006237532A (en) * | 2005-02-28 | 2006-09-07 | Hitachi Kokusai Electric Inc | Substrate processing apparatus |
| JP2010537796A (en) * | 2007-05-11 | 2010-12-09 | エスディーシー マテリアルズ インコーポレイテッド | Gas supply system and gas supply method |
| US8859035B1 (en) | 2009-12-15 | 2014-10-14 | SDCmaterials, Inc. | Powder treatment for enhanced flowability |
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-
1984
- 1984-10-05 JP JP20815884A patent/JPS6186815A/en active Pending
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| JP4566787B2 (en) * | 2005-02-28 | 2010-10-20 | 株式会社日立国際電気 | Substrate processing apparatus and semiconductor device manufacturing method |
| US9216398B2 (en) | 2005-04-19 | 2015-12-22 | SDCmaterials, Inc. | Method and apparatus for making uniform and ultrasmall nanoparticles |
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| US9302260B2 (en) | 2007-10-15 | 2016-04-05 | SDCmaterials, Inc. | Method and system for forming plug and play metal catalysts |
| US9737878B2 (en) | 2007-10-15 | 2017-08-22 | SDCmaterials, Inc. | Method and system for forming plug and play metal catalysts |
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| US9533289B2 (en) | 2009-12-15 | 2017-01-03 | SDCmaterials, Inc. | Advanced catalysts for automotive applications |
| US8859035B1 (en) | 2009-12-15 | 2014-10-14 | SDCmaterials, Inc. | Powder treatment for enhanced flowability |
| US9149797B2 (en) | 2009-12-15 | 2015-10-06 | SDCmaterials, Inc. | Catalyst production method and system |
| US8865611B2 (en) | 2009-12-15 | 2014-10-21 | SDCmaterials, Inc. | Method of forming a catalyst with inhibited mobility of nano-active material |
| US9433938B2 (en) | 2011-02-23 | 2016-09-06 | SDCmaterials, Inc. | Wet chemical and plasma methods of forming stable PTPD catalysts |
| US9216406B2 (en) | 2011-02-23 | 2015-12-22 | SDCmaterials, Inc. | Wet chemical and plasma methods of forming stable PtPd catalysts |
| US8969237B2 (en) | 2011-08-19 | 2015-03-03 | SDCmaterials, Inc. | Coated substrates for use in catalysis and catalytic converters and methods of coating substrates with washcoat compositions |
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| US9511352B2 (en) | 2012-11-21 | 2016-12-06 | SDCmaterials, Inc. | Three-way catalytic converter using nanoparticles |
| US9156025B2 (en) | 2012-11-21 | 2015-10-13 | SDCmaterials, Inc. | Three-way catalytic converter using nanoparticles |
| US9586179B2 (en) | 2013-07-25 | 2017-03-07 | SDCmaterials, Inc. | Washcoats and coated substrates for catalytic converters and methods of making and using same |
| US9566568B2 (en) | 2013-10-22 | 2017-02-14 | SDCmaterials, Inc. | Catalyst design for heavy-duty diesel combustion engines |
| US9517448B2 (en) | 2013-10-22 | 2016-12-13 | SDCmaterials, Inc. | Compositions of lean NOx trap (LNT) systems and methods of making and using same |
| US9427732B2 (en) | 2013-10-22 | 2016-08-30 | SDCmaterials, Inc. | Catalyst design for heavy-duty diesel combustion engines |
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