JPS6153431B2 - - Google Patents
Info
- Publication number
- JPS6153431B2 JPS6153431B2 JP15148783A JP15148783A JPS6153431B2 JP S6153431 B2 JPS6153431 B2 JP S6153431B2 JP 15148783 A JP15148783 A JP 15148783A JP 15148783 A JP15148783 A JP 15148783A JP S6153431 B2 JPS6153431 B2 JP S6153431B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- deposition chamber
- base
- substrate
- shielding member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 36
- 230000008021 deposition Effects 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 239000002994 raw material Substances 0.000 claims description 7
- 239000007789 gas Substances 0.000 description 21
- 239000010408 film Substances 0.000 description 14
- 108091008695 photoreceptors Proteins 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003085 diluting agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002981 blocking agent Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5093—Coaxial electrodes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は薄膜製造装置に関し、更に詳しくは、
基体の表面に各種の薄膜、例えば光導電膜、半導
体膜は絶縁体膜をグロー放電法で形成する際に、
均一な膜特性を有する大面積の薄膜を高度の再現
性及び量産性をもつて製造することが可能な新規
構造の薄膜製造装置に関する。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a thin film manufacturing apparatus, and more specifically,
When forming various thin films such as photoconductive films, semiconductor films, and insulating films on the surface of the substrate using the glow discharge method,
The present invention relates to a thin film manufacturing apparatus with a novel structure capable of manufacturing large area thin films with uniform film characteristics with a high degree of reproducibility and mass productivity.
減圧下の堆積室内で、プラズマ現象を利用して
薄膜形成用の原料ガスを分解し、所定形状（例え
ばドラム、板）の基体の表面に所望特性の薄膜を
通常のグロー放電法で形成する場合、とくに電子
写真感光体の製造時における大面積の薄膜を形成
する場合、形成した薄膜の全面積に亘り、膜厚及
び電気的、光学的又は光電的な膜特性を均一にす
ることは、極めて困難であつた。
In a deposition chamber under reduced pressure, a raw material gas for forming a thin film is decomposed using plasma phenomena, and a thin film with desired characteristics is formed on the surface of a substrate of a predetermined shape (e.g., drum, plate) using a normal glow discharge method. In particular, when forming a large-area thin film during the production of electrophotographic photoreceptors, it is extremely difficult to make the film thickness and electrical, optical, or photoelectric film properties uniform over the entire area of the formed thin film. It was difficult.
例えば、シランガス（SiH4）に放電エネルギー
を加えて分解し、基体の表面にアモルフアス水素
化シリコン（ａ−Si：Ｈ）の薄膜を形成してこの
薄膜の電子写真特性を活用しようとする場合、該
薄膜の特性が薄膜製造時のプラズマ条件に依存す
ること大なので、形成した薄膜の全面積に亘つて
均一な電子写真特性を得るためには、薄膜製造
時、薄膜形成域の全域において均一なプラズマを
発生させることが必要である。 For example, when applying electrical discharge energy to silane gas (SiH 4 ) to decompose it to form a thin film of amorphous silicon hydride (a-Si:H) on the surface of a substrate and utilizing the electrophotographic properties of this thin film, The properties of the thin film largely depend on the plasma conditions during thin film production, so in order to obtain uniform electrophotographic properties over the entire area of the formed thin film, it is necessary to It is necessary to generate plasma.
とくに、基体側からａ−Si：Ｈ薄膜に注入され
てくる電荷の移動を阻止するために基体とａ−
Si：Ｈ薄膜との間に電気絶縁性の電荷ブロツキン
グ層を介在せしめた電子写真感光体にあつては、
該電荷ブロツキング層の厚みが通常約5000Å以下
と非常に薄くなる。そのため、従来のグロー放電
法による薄膜製造装置では膜特性の均一化、薄膜
形成域での均一なプラズマ発生が極めて困難であ
つた。また、該電荷ブロツキング層の厚みが極め
て薄いので、堆積室内で発生せしめたプラズマが
安定しきらないうちに、すなわち、短時間でグロ
ー放電を停止せざるを得ないということも膜特性
の均一化が得られない一因である。 In particular, in order to prevent the movement of charges injected into the a-Si:H thin film from the substrate side, the substrate and a-
In the case of an electrophotographic photoreceptor in which an electrically insulating charge blocking layer is interposed between the Si:H thin film,
The thickness of the charge blocking layer is very thin, usually less than about 5000 Å. Therefore, in the conventional thin film manufacturing apparatus using the glow discharge method, it is extremely difficult to make the film characteristics uniform and to uniformly generate plasma in the thin film forming area. Furthermore, since the thickness of the charge blocking layer is extremely thin, the glow discharge must be stopped before the plasma generated in the deposition chamber becomes stable, that is, within a short period of time, which also makes the film characteristics more uniform. This is one of the reasons why this is not possible.
このようなことから、薄膜の形成速度を低下さ
せることを目的として、堆積室に導入する原料ガ
スの流量を減少させること、又は、高周波電力を
小さくして放電エネルギーを小にすることなどが
検討されている。 For this reason, in order to reduce the rate of thin film formation, consideration is being given to reducing the flow rate of the raw material gas introduced into the deposition chamber, or reducing the discharge energy by reducing the high frequency power. has been done.
しかしながら、このようなプラズマ条件の検討
と選択のみでは、薄膜製造時における量産性の低
下を招くのみならず、とくに電子写真感光体の場
合のように、その感光層の帯電、電荷保持特性を
左右する電荷ブロツキング層を基体の表面に大面
積に亘つて再現性よくかつ均一に形成することは
はなはだ困難であつた。 However, such examination and selection of plasma conditions alone not only leads to a decline in mass productivity during thin film manufacturing, but also affects the charging and charge retention characteristics of the photosensitive layer, especially in the case of electrophotographic photoreceptors. It has been extremely difficult to uniformly form a charge blocking layer over a large area on the surface of a substrate with good reproducibility.
また、膜厚の均一さ、膜特性の均一さは、堆積
室内での電極と基体との配置関係、電極の構造及
び配置により大きく影響を受けることが知られて
いる。 Further, it is known that the uniformity of the film thickness and the uniformity of the film properties are greatly influenced by the arrangement relationship between the electrode and the substrate in the deposition chamber, and the structure and arrangement of the electrode.
しかしながら、従来の装置はこの点でも必ずし
も満足のいく効果を発揮しておらず、とくに、所
定特性を有する大面積の薄膜製造においては、そ
の再現性、量産性において不満足なものであつ
た。 However, conventional apparatuses do not necessarily exhibit satisfactory effects in this respect, and are particularly unsatisfactory in terms of reproducibility and mass production in the production of large-area thin films having predetermined characteristics.
本発明は、上記した従来装置における問題を解
決し、大面積の薄膜を製造した場合でも、全面積
に亘つて膜厚及び膜特性が実質的に均一である薄
膜をグロー放電法で再現性よくかつ高い量産性を
もつて製造することのできる薄膜製造装置の提供
を目的とする。
The present invention solves the problems with the conventional apparatus described above, and even when manufacturing a large-area thin film, it is possible to produce a thin film with substantially uniform film thickness and film properties over the entire area using a glow discharge method with good reproducibility. The object of the present invention is to provide a thin film manufacturing apparatus that can be manufactured with high mass productivity.
本発明の装置は、壁面に原料ガス流入口を有す
る減圧可能な堆積室；該堆積室に内設された回転
自在の基体固定部材に固定され、表面が該堆積室
の内壁と平行になるように配設された基体；壁面
には複数の開口を有し、該基体と電気的に接続さ
れ、かつ該基体を同軸的に被包して配設された回
転自在の遮蔽部材；とから成り、該堆積室の壁面
の少なくとも一部が第１電極で、該基体固定部
材、該基体又は該遮蔽部材の少なくとも１個が第
２電極であることを特徴とする。
The apparatus of the present invention has a deposition chamber that can be depressurized and has a raw material gas inlet on the wall surface; it is fixed to a rotatable base fixing member installed in the deposition chamber, and the surface thereof is parallel to the inner wall of the deposition chamber. A rotatable shielding member having a plurality of openings in the wall surface, electrically connected to the base, and coaxially surrounding the base. , at least a part of the wall surface of the deposition chamber is a first electrode, and at least one of the substrate fixing member, the substrate, or the shielding member is a second electrode.
本発明装置を好適な１実施例として模式的に示
した縦断面図により更に詳細に説明する。 The device of the present invention will be explained in more detail with reference to a longitudinal sectional view schematically showing a preferred embodiment of the device.
図で１は堆積室である。堆積室１は、通常のグ
ロー放電堆積装置に使用されている構造のベース
プレート２の上に電気絶縁性のＯリング３を介し
て載置された円筒状の筒体４、更にその上にＯリ
ング３′を介して載置された蓋５によつて気密に
組立てられている。本発明装置にあつては、この
筒体４が第１電極となる。 In the figure, 1 is a deposition chamber. The deposition chamber 1 has a cylindrical body 4 placed on a base plate 2 with an electrically insulating O-ring 3 interposed therebetween, which has a structure used in a normal glow discharge deposition apparatus, and an O-ring further placed on the base plate 2. It is assembled airtight by a lid 5 placed through 3'. In the device of the present invention, this cylindrical body 4 becomes the first electrode.
筒体４の側壁面には所定のコンダクタンスを有
するガス流入口６，６′が複数個穿設され、これ
らの外周には円環状のガス流入室７が設けられ、
該流入室７には流量調整用のバルブ８を備えたガ
ス導入管９が配設されている。該ガス導入管９か
らは、薄膜形成用の原料ガス又は希釈ガスとの混
合ガスが所定流量で導入される。１０，１１，１
２はいずれも堆積室１内を排気するための排気管
で、それぞれバルブ１３，１４，１５を備えてい
る。 A plurality of gas inflow ports 6, 6' having a predetermined conductance are bored in the side wall surface of the cylinder 4, and an annular gas inflow chamber 7 is provided on the outer periphery of these ports.
The inflow chamber 7 is provided with a gas introduction pipe 9 equipped with a valve 8 for adjusting the flow rate. A raw material gas for thin film formation or a mixed gas with a diluent gas is introduced from the gas introduction pipe 9 at a predetermined flow rate. 10, 11, 1
2 are exhaust pipes for exhausting the inside of the deposition chamber 1, and are each equipped with valves 13, 14, and 15.
１６は、堆積室１内の略中央位置に立設された
基体固定部材で、堆積室１の外に気密に延びる回
転軸１７を介して駆動装置（図示しない）により
正逆回転自在となつている。 Reference numeral 16 denotes a base fixing member erected at a substantially central position within the deposition chamber 1, and is rotatable in forward and reverse directions by a drive device (not shown) via a rotating shaft 17 extending airtightly outside the deposition chamber 1. There is.
該固定部材１６上には、その表面に所望の薄膜
を形成すべき基体１８が固定される。このとき、
基体１８の表面が円筒４の内壁と平行になるよう
に配設されなければならない。かくして、基体１
８は、固定部材１６と同じ回転運転をする。 A base 18 on which a desired thin film is to be formed is fixed on the fixing member 16. At this time,
The surface of the base body 18 must be arranged parallel to the inner wall of the cylinder 4. Thus, substrate 1
8 performs the same rotational operation as the fixed member 16.
１９は、壁面に複数の開口（図では規則的に配
列するスリツト）を有し、例えば籠型構造の遮蔽
部材で、基体１８を略完全に同軸的に被包して配
設される。この遮蔽部材は、基体の表面全体に均
一な薄膜を形成するために設けられるものであ
る。遮蔽部材１９は回転軸２０を介して駆動装置
（図示しない）に連結されて、正逆の回転自在に
なつている。開口の形状は格別限定されず、円
孔、角孔など適宜に設計すればよい。 Reference numeral 19 has a plurality of openings (slits arranged regularly in the figure) in a wall surface, and is, for example, a cage-shaped shielding member, which is disposed so as to substantially completely coaxially enclose the base body 18 . This shielding member is provided to form a uniform thin film over the entire surface of the base. The shielding member 19 is connected to a drive device (not shown) via a rotating shaft 20, so that it can freely rotate in forward and reverse directions. The shape of the opening is not particularly limited, and may be appropriately designed such as a circular hole or a square hole.
また、遮蔽部材１９で基体１８を被包する際に
は、遮蔽部材１９の内壁と基体１８の外壁（薄膜
を形成すべき表面）とを接触させるか又は微小な
間隙を置いて近接せしめるか、いずれかの態様で
配設することが好適である。両者の間隙が大きく
なると、基体１８の全面積に亘つて均一な薄膜が
形成できなくなる傾向が増大して不都合である。 Furthermore, when covering the base 18 with the shielding member 19, the inner wall of the shielding member 19 and the outer wall (the surface on which the thin film is to be formed) of the base 18 are brought into contact with each other, or are brought close to each other with a small gap between them. It is preferable to arrange it in either manner. If the gap between the two becomes large, there is a tendency that a uniform thin film cannot be formed over the entire area of the substrate 18, which is disadvantageous.
この場合、本発明の装置にあつて重要なことは
基体１８と遮蔽部材１９との回転運動によるプラ
ズマ変動を防止して基体の全面積に亘つて均一な
薄膜を形成するために、基体１８と遮蔽部材１９
との間は例えばブラシを介在させて電気的に接続
し、両者を同一電位に保持することである。 In this case, what is important in the apparatus of the present invention is that the substrate 18 and the shielding member 19 are connected to each other in order to prevent plasma fluctuations caused by the rotational movement of the substrate 18 and the shielding member 19 and to form a uniform thin film over the entire area of the substrate. Shielding member 19
For example, a brush may be used to electrically connect the two and maintain them at the same potential.
本発明にあつては、これら固定部材１６、基体
１８、遮蔽部材１９の少なくともいずれか１つが
第２電極として機能する。 In the present invention, at least one of the fixing member 16, the base 18, and the shielding member 19 functions as a second electrode.
２１はヒータであつて、薄膜形成時又はその前
後において基体１８を所定温度に保持するもので
ある。また、２２は同軸ケーブル２３を介して筒
体（第１電極）４に接続された高周波電源で、堆
積室１内にグロー放電を発生させる。 Reference numeral 21 is a heater that maintains the substrate 18 at a predetermined temperature during or before and after forming the thin film. Further, 22 is a high frequency power source connected to the cylinder (first electrode) 4 via a coaxial cable 23, which generates glow discharge in the deposition chamber 1.
本発明の装置は次のようにして操作される。 The device of the invention operates as follows.
まず、必要に応じて表面に清浄化処理を施した
基体１８を固定部材１６に載置して固定する。つ
ぎに、基体１８に遮蔽部材１９をかぶせる。この
とき両者を密接させて電気的に同一電位となるよ
うにする。その後、Ｏリング３、筒体４、Ｏリン
グ３′を重ね、最後に蓋５をかぶせて装置を組立
てる。 First, the base 18 whose surface has been subjected to a cleaning treatment as required is placed on the fixing member 16 and fixed. Next, the shielding member 19 is placed over the base body 18 . At this time, both are brought into close contact so that they have the same electrical potential. Thereafter, the O-ring 3, cylinder 4, and O-ring 3' are stacked on top of each other, and finally the lid 5 is placed on top of the O-ring 3, cylinder 4, and O-ring 3' to assemble the device.
ついで、全てのバルブを閉にした状態で、まず
バルブ１３を開いて排気管１０から排気して堆積
室１内を所定の真空度にした後バルブ１３を閉じ
る。バルブ１４を開き、かつ、バルブ８を開いて
導入管９からガス流入部７へ原料ガス又は希釈ガ
スとの混合ガスを流入し、堆積室１内を所定の内
圧にする。 Next, with all the valves closed, the valve 13 is first opened to exhaust air from the exhaust pipe 10 to bring the inside of the deposition chamber 1 to a predetermined degree of vacuum, and then the valve 13 is closed. The valve 14 is opened, and the valve 8 is opened to allow the raw material gas or the mixed gas with the diluent gas to flow into the gas inflow section 7 from the introduction pipe 9, thereby bringing the inside of the deposition chamber 1 to a predetermined internal pressure.
ヒータ２１で基体１８を所定温度に維持し基体
１８及び遮蔽部材１９を所定の回転数で回転さ
せ、電源２２を作動せしめて、筒体（第１電極）
４と基体（第２電極）の間でグロー放電を起こさ
せて、原料ガスをプラズマ化する。薄膜製造後
は、電源をきりガス供給を停止した後、リークバ
ルブ１５を開いて堆積室１内を常圧に戻して操作
の全体を終結せしめる。 The base body 18 is maintained at a predetermined temperature with the heater 21, the base body 18 and the shielding member 19 are rotated at a predetermined rotation speed, the power supply 22 is activated, and the cylindrical body (first electrode) is heated.
4 and the base (second electrode) to generate a glow discharge to turn the raw material gas into plasma. After producing the thin film, the power is turned off and the gas supply is stopped, and then the leak valve 15 is opened to return the inside of the deposition chamber 1 to normal pressure, thereby terminating the entire operation.
例えば、直径130mm高さ340mmの電子写真感光体
用のアルミ製ドラムの表面に、電荷ブロツキング
としてａ−Si：Ｈの酸化物薄膜を形成するため
に、堆積室１内をシランと酸素との混合ガス（容
量比で10：１）で0.1Torrに保持し筒体４とドラ
ム１８の間に13.56MHzの高周波電圧を印加しな
がら、ドラムを16rpm、籠型の遮蔽部材１９を
7rpmで逆回転させて約６分間操作したところ、
ドラムの表面には約1000Åの薄膜が形成された。
成膜速度は160Å／分である。この薄膜の厚みを
ドラムの全面積に亘り測定したところ、厚み誤差
±2.0Åであり非常に均一であつた。また、得ら
れたドラムから感光体をつくりその感光体として
の特性を測定したところ、非常に良好で、しかも
場所による特性のバラツキも認められなかつた。 For example, in order to form an a-Si:H oxide thin film as a charge blocking agent on the surface of an aluminum drum for an electrophotographic photoreceptor with a diameter of 130 mm and a height of 340 mm, a mixture of silane and oxygen is mixed in the deposition chamber 1. While maintaining the pressure at 0.1 Torr with gas (volume ratio 10:1) and applying a high frequency voltage of 13.56 MHz between the cylinder 4 and the drum 18, the drum was rotated at 16 rpm and the cage-shaped shielding member 19 was
After operating it for about 6 minutes with reverse rotation at 7 rpm,
A thin film of approximately 1000 Å was formed on the surface of the drum.
The deposition rate was 160 Å/min. When the thickness of this thin film was measured over the entire area of the drum, it was found to be extremely uniform with a thickness error of ±2.0 Å. Further, when a photoreceptor was made from the obtained drum and its characteristics as a photoreceptor were measured, it was found to be very good, and no variation in characteristics depending on location was observed.
以上の説明で明らかなように、本発明の装置
は、基体が大面積の表面を備えていても、その全
面積に亘つて、均一な膜厚、膜特性の薄膜を得る
ことができ、しかも比較的大きな成膜速度で得る
ことができるので量産性にも富み、その工業的価
値は大である。
As is clear from the above explanation, even if the substrate has a large surface area, the apparatus of the present invention can obtain a thin film with uniform thickness and film characteristics over the entire surface area. Since it can be obtained at a relatively high film formation rate, it is suitable for mass production and has great industrial value.
図は本発明装置の１例を示す模式的な図であ
る。
１……堆積室、２……ベースプレート、３，
３′……Ｏリング、４……筒体（第１電極）、５…
…蓋、６，６′……ガス流入口、７……ガス流入
室、８，１３，１４，１５……バルブ、９……ガ
ス導入管、１０，１１，１２……排気管、１６…
…基体固定部材、１７，２０……回転軸、１８…
…基体、１９……遮蔽部材、２１……ヒータ、２
２……高周波電源、２３……同軸ケーブル。
The figure is a schematic diagram showing an example of the device of the present invention. 1...Deposition chamber, 2...Base plate, 3,
3'... O-ring, 4... Cylindrical body (first electrode), 5...
...Lid, 6, 6'... Gas inlet, 7... Gas inflow chamber, 8, 13, 14, 15... Valve, 9... Gas inlet pipe, 10, 11, 12... Exhaust pipe, 16...
...Base fixing member, 17, 20... Rotating shaft, 18...
... Base, 19 ... Shielding member, 21 ... Heater, 2
2...High frequency power supply, 23...Coaxial cable.
Claims (1)
積室； 該堆積室に内設された回転自在の基体固定部材
に固定され、表面が該堆積室の内壁と平行になる
ように配設された基体； 壁面には複数の開口を有し、該基体と電気的に
接続され、かつ、該基体を同軸的に被包して配設
された回転自在の遮蔽部；とから成り、 該堆積室の壁面の少なくとも一部が第１電極
で、該基体固定部材、該基体又は該遮蔽部材の少
なくとも１個が第２電極であることを特徴とする
薄膜製造装置。[Claims] 1. A depressurizable deposition chamber having a raw material gas inlet on the wall surface; fixed to a rotatable base fixing member installed in the deposition chamber, so that the surface thereof is parallel to the inner wall of the deposition chamber. a rotatable shield having a plurality of openings in the wall surface, electrically connected to the base, and coaxially surrounding the base; A thin film manufacturing apparatus comprising: at least a part of the wall surface of the deposition chamber being a first electrode; and at least one of the substrate fixing member, the substrate, or the shielding member being a second electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15148783A JPS6043488A (en) | 1983-08-22 | 1983-08-22 | Apparatus for producing thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15148783A JPS6043488A (en) | 1983-08-22 | 1983-08-22 | Apparatus for producing thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6043488A JPS6043488A (en) | 1985-03-08 |
| JPS6153431B2 true JPS6153431B2 (en) | 1986-11-18 |
Family
ID=15519570
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15148783A Granted JPS6043488A (en) | 1983-08-22 | 1983-08-22 | Apparatus for producing thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6043488A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63136125U (en) * | 1987-02-27 | 1988-09-07 | ||
| JPS63136127U (en) * | 1987-02-27 | 1988-09-07 | ||
| JPH0430261Y2 (en) * | 1987-02-27 | 1992-07-22 | ||
| JPH0685829U (en) * | 1993-05-26 | 1994-12-13 | 積水化学工業株式会社 | Universal drain |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11339477B2 (en) | 2016-11-30 | 2022-05-24 | Jiangsu Favored Nanotechnology Co., LTD | Plasma polymerization coating apparatus and process |
| CN106622824B (en) | 2016-11-30 | 2018-10-12 | 江苏菲沃泰纳米科技有限公司 | A kind of plasma polymerized coating device |
| CN106756888B (en) | 2016-11-30 | 2018-07-13 | 江苏菲沃泰纳米科技有限公司 | A kind of nano-coating equipment rotation frame equipments for goods |
-
1983
- 1983-08-22 JP JP15148783A patent/JPS6043488A/en active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63136125U (en) * | 1987-02-27 | 1988-09-07 | ||
| JPS63136127U (en) * | 1987-02-27 | 1988-09-07 | ||
| JPH0430261Y2 (en) * | 1987-02-27 | 1992-07-22 | ||
| JPH0685829U (en) * | 1993-05-26 | 1994-12-13 | 積水化学工業株式会社 | Universal drain |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6043488A (en) | 1985-03-08 |
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