JPS615232A - Formation of oriented layer - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Applicability] The present invention provides that the flat surface of at least one +
(Distributed from a supply source or vapor deposition source)
A method for forming an alignment layer on a surface by exposing the impinging partial flow Q, to a surface under an angle of incidence different from 0°, an apparatus for carrying out the method, and a method and apparatus for the formation thereof. This invention relates to liquid crystal substrates for use in liquid crystal substrates.

[Conventional technology]

A device of this type is previously known from US Pat. No. 3,834,792.

This formation method is used to form an alignment layer on the substrate surface oriented toward the liquid crystal in a liquid crystal display device. 1. In that case, a structure consisting of inclined columnar elements is formed on the substrate surface by, for example, inclined vapor deposition of SiO-based material (
Guttmann, L. Al1, “Topography of graded evaporated silicon oxide films and their effect on liquid crystal alignment, J.
Electronic devices 6, 2 IEEE I-Transactions,
Vol, FED-24, No, 7.197
7, p. 795-804), these elements are based on the coherence within the liquid crystal by C' which orients the optical axis of the liquid crystal parallel to the direction of the liquid crystal within the boundary layer following the substrate surface. , the form of the liquid crystal in all display cells is changed to woody-1.

According to this known formation method, LC is disclosed in US Pat. No. 3,834,792, in which a pair of substrates on which a vapor deposited layer is to be formed is formed into a dot-like vapor deposition layer a+λ of 1. On the other hand, the particle flow from this evaporation source is approximately 80° between the perpendicular to the substrate.
It is housed in a vacuum apparatus so that it collides with the substrate surface at an incident angle of . The relative spatial position between the substrate and the deposition source remains unchanged during deposition.

The preferred direction of the optical axis defined by the alignment layer &;l:, at each point on the substrate surface, depends not only on the thickness of the alignment layer but also on the direction of incidence of the particle stream emitted from the deposition source, in which case:
The tilt bias angle between the preferred direction and the substrate plane is 11
"Accurate determination of the tilt bias angle of liquid crystals as a function of the angle of incidence of the particle stream", Jeffer, T. J., Nehrnck, J. r. Applied, Physics, Vol.
48, NO,',), 197'Lp 1783-1.
792), and the azimuth orientation of the preferred direction is determined by 'c, t'1 . Since the L'L correspondence is 1-7, the particle flow is spatially diverged into this,1,)'11. By 5U, the entire base surface Q is set in the priority direction.
A perfect alignment is only achieved if the distance between the deposition source and the substrate surface is very large compared to the length of the substrate surface.

This relatively small irregularity in the azimuth direction I☆ (1' + inverted bias angle) is absolutely necessary to achieve satisfactory optical properties of liquid crystals.

For example, in order to form an alignment layer with a large surface area of 192 points x 280 points and an active surface of about +4 x 20 cm with a permissible azimuth variation of 5° and less than L, conventional methods are required. In this case, it is necessary to make the distance from the vapor deposition source to the substrate surface larger than 230 cm.

Increasing the distance per gear in this way increases the size of the vacuum chamber, increases equipment costs, and increases pump operating time.
Substrate yield will be low.

In other cases, when the conventional method is applied to a substrate of the above size, and the thin bonding distance is set to about 30 cm, which can be achieved with a small vacuum chamber, the azimuth direction is about 30°. fluctuate. Variations of this order of magnitude, and associated variations in the rotation angle of the liquid crystal, cause completely unacceptable variations in response time, operating voltage, and color of the finished display cell.

Another known method (Koshida, N:I-?fj, Large Surface Pseudo-Homeotropic Orientation of Products and Guest Bost Positive Jinx, Vol. 52, No. 9,] 98
1, p. 534-536), instead of a point deposition source, a linear deposition source of about 40 lengths is used. But 2,
For geometrical reasons, it is clear that a uniform preferential azimuthal orientation over the entire deposition surface can only be achieved with an infinitely long deposition source. Stretching the deposition source to a limited length can only alleviate some of the irregularities. Furthermore, increasing the length of the deposition source results in irregular grain density, which makes the application of electron current deposition less effective.

Yet another method (Hiroshima, K: "Controlled High Tilt Angle Nematic Alignment Adaptable to Glass Frit Seals 1, J
．． Applied, Fisi,, Cus, Vol.

21, No. 12, 1982, p. 761-763), the substrate is rotated at an angle-dependent angular velocity during the deposition process so that the azimuth of the particle stream impinging on the substrate surface changes constantly.

Apart from the fact that this method does not provide a sufficiently regular and uniform azimuth orientation of the preferred direction with respect to the distance f between a large substrate and a relatively small deposition source, the unique rotation of each substrate Since a flexible holding is required with a correspondingly controlled drive, the equipment required to carry out this method is expensive and complex. Therefore, the number of substrates subjected to the F-bonding process in one work process is also reduced.

According to a method of selective vapor deposition of a parallel grooved electrode plate, which is known from U.S. Pat. is given, and a horizontal lattice rondo is formed. In order to form a deposited layer as uniform as possible in terms of thickness and length on the sides of the groove, a restriction is arranged between the deposition source and the substrate, and the deposition is carried out through a partial flow passing through this restriction. During the process, the substrate is moved roughly parallel to the particle stream. The deposited metal layer is
It simply has the function of a light-opaque layer. By moving the substrate approximately parallel to the particle stream, the angle of incidence remains constant, but the azimuth variation in the direction of incidence across the substrate surface is not thereby affected. Therefore, applying this known method to the formation of alignment layers of liquid crystals does not result in significant improvements in the main azimuth alignment.

[Problem that the invention seeks to solve]

The invention as defined by claims 1, 9 and 11 provides an alignment layer whose preferred directions are regularly and uniformly aligned, particularly in the azimuth direction, over a large surface, between the deposition source and the substrate surface. Provided is a method of the type described at the beginning of the main text of specification 4 for forming a small distance between the two, an inexpensive apparatus for carrying out the method, and a liquid crystal substrate manufactured according to the method. .

An advantage of the invention consists in that all points of the surface to be deposited are exposed to the incident particle stream in exactly the same way in the azimuthal direction. This ensures that the azimuth orientation of the preferred direction of the liquid crystal optical axis of the alignment layer is corrected. Becomes regular in minutes. The size of the plate is limited only by the dimensions of the vacuum chamber in its direction. The distance between the deposition source and the plate edge pointing towards it can be reduced to the required degree of flooring.

Further, according to the forming method of the present invention, a plurality of plates can be vapor-deposited in a single process, thereby increasing economical efficiency.

The forming apparatus for carrying out the forming method of the present invention has a strong and simple structure and can be manufactured at low cost.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made to preferred embodiments of the invention shown in the drawings.

〔Example〕

The geometric configuration shown in the perspective view in FIG. 1 for carrying out the production method according to the invention comprises a source, preferably point-shaped source 1, arranged in the source plane 17 and a light source. a diaphragm 3 disposed parallel to and at a distance from the plane 17, the diaphragm 3 being partially cut away with a diaphragm aperture 4 which has been reduced as a square aperture-1 in order to save power in the illustration. It is illustrated. A plate 2 is arranged on one side of the diaphragm 3 so that the particle flow emitted from the source 1 and restricted by the diaphragm opening 4 is incident on the surface 131- of the diaphragm 3.

　　.

Plate 2 is in the original position perpendicular to the source plane 17 (indicated by a dashed line)
From there, it is rotated by a rotation angle δ about the co-movement shaft 12 so that its surface 13 is oriented toward the supply 1,000,000.

A source 1 of SiO, SiO□, TiO□, MgF2, 81□O1 or other materials suitable for forming an alignment layer is excited to deliver a stream of particles by resistive heating or via an electron stream. be done. Any other method for generating the particle stream may be used, as long as the generated particle stream is directed enough to be incident at a predetermined angle of incidence on the surface 13 of the plate 2. .

The plate 2 has an angle of incidence δ at which the particle stream falls on any part of the surface 13.
The angle of incidence δ is, as conventionally used, the angle between one streamline of the particle stream and the normal to the plate 2.

According to the invention, the plate 2 and the source 1 are moved relative to each other from the first position towards the second position with a constant velocity parallel to the surface 13 and perpendicular to the direction of the particle flow. move it to

During the relative movement of the plates, the plate 2 may be kept in the rest position and the unit consisting of the supply source 1 and the diaphragm 3 may be moved. However, in the case of a resistive heating type source, this relative displacement type requires high current flexible wiring. Therefore, a relative movement method in which the supply source 1 and the aperture 3 are fixed in position and the plate 2 is moved is advantageous.

According to a preferred embodiment of the forming method according to the invention, the plate 2
The movement is carried out in the direction of a straight line extending parallel to the coaxial axis 12 and thus parallel to the source plane 17, ie in the direction of the arrow in FIG.

The diaphragm aperture 4 (for example, a slit-like aperture of constant width) allows only particle streams bounded on both sides in the direction of movement to pass through. This boundary is such that the plate 2 is outside the particle stream in its first and second positions and completely passes through it during its movement.

At a position intermediate between the first and second positions, the particle stream impinges on the partial surface comprising the surface treatment 3, as shown in FIG. In the extreme case, this partial surface 11 can be identical to the entire surface 13.

The first and second positions of the plate 2 are illustrated in Figures 2a and 2b in connection with an embodiment of an apparatus for carrying out the forming method according to the invention. Above the diaphragm 3 with the fiber supply source 1 and the diaphragm aperture 4, a number of plates 2 are juxtaposed on a carriage 6-t in the shape of two sectors in a direction perpendicular to the direction of movement.
This carriage can be moved along two rails (only one of which is designated -1 by 7a). The carriage 6 has a worm 8 extending in the moving directionj7,
The worm is meshed with the gear 9. The gear 9 is connected to an electric motor 10 so as to move the carriage 6 together with the plate 2.
driven by.

According to the illustrated example, the diaphragm aperture 4 is preferably located symmetrically with respect to the central plane 5. Center plane 5, supply source]
through, at right angles to the direction of movement, thus co-moving axis 1 of FIG.
It extends at right angles to 2.

FIG. 3 is a front view of the forming apparatus shown in FIGS. 2a and 2b;
That is, it is a view seen in the direction of movement. two rails 7a, 7
Between b there can be seen two sets of seven plates 2 arranged in a fan-like manner, each plate 2 having its surface completely illuminated by the particle stream over its entire height, while the adjacent plates 2 are It is positioned and tilted relative to the supply source 1 so as not to create shadows.

Each point on the plate 2'2 lies on one straight line in the plane of the plate extending parallel to the direction of movement, as shown by the lines a, b, and C exemplarily drawn in FIG. 4a.

When the plate 2 moves through the particle stream, it enters the particle stream at points Pa, Pb-Pc of straight lines a, b, cE,
Leaving the particle stream at locations Qa, Ob, OC. In that case, each point on the same straight line is bombarded by particle streams that coincide with each other and have the same direction of incidence, so
The alignment layer is formed accurately and uniformly along this straight line.

For points lying on separate straight lines 6,1: the respective angles of incidence δa1δb16C are different, such that δa<δb<δC, as shown in FIG. 4b. However, if the aperture width is constant, even if a point located on a straight line remote from the supply t Straight lines representing directions point in exactly the same azimuth direction. Therefore,
Over the entire surface of the plate 2, an alignment layer is formed uniformly with respect to the azimuth alignment of the preferential direction of the optical axis of the liquid crystal.

Example Using the apparatus shown in Figs. 2a and 2b in a model BA-71.0 manufactured by Paltzer Company with a mark 11H type page,
4 cm on two boards with dimensions of 24 x 20 cm
SiO is deposited through the wide aperture 4. The distance from source 1 to the bottom edge of the board with a length of 24 cm is 3Q
cm. The alignment layer is sourced for about 8 minutes using a moving speed of 4 cm/min. Viewed from above the surface of the substrate, the source 1 has this geometric shape.

In this case, it would appear to move on about 86 circular arcs.

A slight difference in the incident angle δ will cause an equally slight deviation in the angle between the optical axis of the liquid crystal in the alignment layer and Table 1, i.e., a bias tilt, which will affect the finished liquid crystal. It only slightly changes the opto-electrical properties of the display.

Even though the azimuth orientation of the alignment layer to be deposited is completely constant over the surface 13 by the relative movement of the plate 2 and the source 1 according to the invention, the direction of incidence δ
(see Figure 41) and especially the change in the thickness of the weeping layer cannot be resolved. This variation is due to the specific intensity distribution of the particle stream emitted from the source 1 and the feed/g, 1-plate 2 distance.

35.5 x 35.5 cm (+4
In a practical case where a substrate of size x14 inches) is placed relative to the source l, the thickness of the y adhesion layer is tripled from the -1- edge to the bottom edge of the substrate; The angle of incidence is 8
Decreased from 6.1° to 83°'! i”Z).

In order to reduce or completely eliminate variations in the angle of incidence δ, according to another embodiment of the production method according to the invention, the plate 2 is
During the movement, it is kept in a concave bent position with respect to the feed #]. Important geometrical parameters for deposition on curved J roots are shown in FIG.

The particle stream emitted from the supply t1.1 located in the source plane 17 impinges on the curved plate 2. FIG. 5 illustrates this configuration by means of a cross section passing through the central portion 5. The upper edge flow of the particle flow colliding with one edge Q of the plate 2 is at 17° from the source surface.
An angle β1 is formed between them and a distance r1 passes. In the case of the lower edge flow colliding with the lower edge of provisional 2, the angle is β. , the distance traversed is r. It is. Each particle stream intermediate the two edge streams is at an angle δ, a distance r, and a curved temporary 2
- has an angle of incidence δ defined by a tangent drawn to the point of collision or a perpendicular to it.

In addition, a restrictor 14 is created in FIG. The intersection of the aperture plane ]4 and the particle flow (β, r) forms a linear parameter X, whose bar) meter X determines the particle flow. The requirements for the angle of incidence δ depending on the parameters r, β, X arrive at a formula representing a mathematical curve consisting of:

This tl, &;l:, is known as a logarithmic spiral and is written in the previously defined polar coordinates β, r as follows.

r = r (, ex, p((β-β.)/lan (
90-δ) (1) Here, coordinates r0, β0, and fixed base jl are assumed to be one point ζ, which belongs to the collision point of the lower edge flow.

The polar coordinates of the σi salient point of the upper edge flow are obtained from the condition that the linear integral over the curved section of the logarithmic spiral defined by equation (11) is equal to the height h of the plate 2.

rl ”' r o L!xp((β, -βo) /
jan (90-δ)) (3] For the known height of the plate 2 and the predetermined angle of incidence δ, from equations (1), (211, (31) The corresponding positions and curvatures of the plates are calculated. The result of this sum (γ) for treatment 2 of 14 plates is shown in Figure 6a.

As seen from this 6th a to 1, the incident angle δ of the same -.
(in the example of Figure 6a, δ-85°), the required plate 20
The value of curvature is small. This is particularly shown in Figure 7,
In this Figure 7, the length 35.5 shown in Figure [-i a]
The width of the scale on the vertical axis is expanded as a function of the deviation D from the base line (straight line) of the 14 plates of cm. Applying force to two sets of symmetric fan-shaped arrays of seven plates], seven bounded curves are obtained, and the value of curvature increases from the outer plate 2 to the inner plate 2 in Fig. 6a. , the maximum curvature is about 2IIm.

For example, a glass substrate with a thickness of about 0.7 inches is used as the substrate, and since a glass 2N plate with the dimensions mentioned above can be bent 15 mm from the center, the maximum thickness shown in Fig. 7 can be bent. This can be realized without any problems compared to the 2I1m bias.

The position and curvature of the plate 2 shown in FIG. For example, if you fix it 2), the retaining plate itself number, the third
It is attached to the carriage shown in the figure (not shown in Figure 6d for clarity of illustration).

Another embodiment of the forming method according to the invention takes into account the variation of the distance between the supply a, 1 and the plate 2 and a predetermined intensity distribution of the particle stream emitted from the supply source 1. This intensity distribution is determined by the (90″-β) law (where β is the polar angle defined in Figure 5).
Therefore, the thickness d of the deposited layer is determined by setting the incident angle δ to −・ constant
The following proportional relationship holds true for .

d~(w/r)sin β (4) Above formula (
In 4), r represents the distance or radius shown in FIG. 5, and W represents the width of the aperture 14 at the location of the aperture 14 defined by the parameter X in FIG.

To obtain an alignment layer of constant thickness, the width W in equation (4)
should be proportional to r/sin β. Rewriting using equation (1), where k represents the scaling factor and 2 represents the distance between the source surface 17 and the aperture surface 14.

For the scaling factor, the maximum width of the diaphragm aperture 4 is limited to a practical value, for example 70111I+.

The diaphragm aperture 4 of the diaphragm 3 of FIG. 6a, calculated according to 2(5), is shown in the top view of FIG. Each of the 14 plates 2 is assigned one partial area 16 of the hard part 1,
Each partial territory J! i1 [i is 1. It serves to throttle one corresponding partial flow 15 of the total particle flow. The partial area 16 belonging to one selected plate 2' is indicated in FIG. 6b by a boundary line (dashed line). Within each partial region 16, the width W is determined from equation (5) depending on the X coordinate value within the aperture plane 14. All subregions are combined into 19 large diaphragm apertures 4 for simplification purposes (
j[, and there is a corresponding serrated transition zone between two adjacent partial regions 16. Furthermore, as can be seen from FIG. 6b, the width W of the outer subarea is somewhat greater than the width W of the inner subarea, since the associated plate 2 is correspondingly separated from the supply source 1. This is because the intensity distribution decreases as the angle β becomes smaller.

When plate 2 is not curved according to a logarithmic spiral during vapor deposition but kept flat (see Figure 3), j! l]-4) Incident angle δ
When is not constant, the following proportional relationship different from that obtained by equation (4) is obtained.

d~(w/r 2) ・sin β'r,'(:O8
δ, (6) In equation (6), rll, δ1 are the central plane 5
The length and the angle of incidence of a streamline formed by a particle stream that impinges on the surface J3 of the plate 2 at the horizontal center line are respectively represented.

In this case, if the thickness d is constant, a proportional relationship will be established between the width W and the other quantities.

w~(r2/sinβ) ・(1/ r', ・co
s δ, )) (71 To summarize the above, according to the formation method of the present invention, an alignment layer with completely uniform azimuth orientation is formed. Other preferred embodiments of the present invention (7) According to the formation method, variations in the thickness of the deposited layer as well as in the angle of incidence are further eliminated, so that a large substrate of a liquid crystal display can be provided with an alignment layer with respect to all parameters. A liquid crystal display device equipped with this structure has completely uniform optical characteristics and photoelectric characteristics.

The layer structure of the flat plate 2 or liquid crystal substrate will be explained with reference to FIG. 8, which uses different scales for each part. Thickness 0.
5-1.5 +I+1, preferably 0.7 vomit or 1.1
Fin glass electrode support Fi18-Ir, thickness 10~
A crystal closure layer 19 of 200 nm, preferably 70 nm is formed. This blocking layer 19 prevents or at least reduces the migration of Na ions.

The blocking layer 19 is doped with 5-10% 5nO7, preferably In, 2O. , the structural conductive layer or electrode layer 2
There is 0. The thickness of the electrode layer 20 is 20-300 nm,
Preferably it is 120 to 130 nm.

On the electrode layer 20 there is a protective layer 21 of a polymer, for example polyamide or polyvinyl alcohol, in particular polyimide or polyimideamide, which is applied onto the electrode layer 20 by offset printing, tampon printing or screen printing. The thickness of the protective layer 21 is 50 to 1100 nm. The sheet resistance of the electrode layer 20 is 100 ohms (resistance of the square surface portion). This protective layer forms a good blocking layer and ensures a long service life of the liquid crystal display.

The protective layer 21 preferably has a length of 20 to 100 μm.
A glass fiber spacer a having a diameter of 5 to 8 μm is embedded. These spacers are used to maintain a certain distance between both glass substrates of the liquid crystal cell.

On the protective layer 21, an alignment layer 23 made of one of the materials mentioned above is applied by oblique evaporation from the direction of incidence A at an angle of incidence δ. This vapor deposition makes it possible to align the liquid crystal molecules with respect to the wall at an angle of 20 DEG to 30 DEG with respect to the wall surface. Without the alignment layer 23, the protective Fi2
By normal friction of 1°, an oblique angle of about 1° of the liquid crystal molecules near the wall can only be obtained.The width of the alignment layer 23 is in the range of 2 to 20 nm. In this case, the alignment of the liquid crystal is disturbed.However, this defect is not a disorder from a macroscopic perspective.

In addition to the layers shown in FIG. 8, the layer structure shown in FIG. 9 further includes a support layer 22 of oxide, especially Gdg (L+), which has a thickness of 50=] and OOnm. , as gadolinium nitrate with an organic binder, by screen printing.The protective layer 21 is applied by centrifugation in this case and has a thickness of 2 to 10 nm.

In the embodiment shown in FIG. 8 as well as in the embodiment shown in FIG. 9, the spacer a can be arranged on or above the alignment layer 23. Glass bulbs may be used instead of glass fibers.

[Brief explanation of drawings]

FIG. 1 shows a supply source used in a forming method according to the present invention;
A perspective view showing the geometry of the aperture and the plate, FIG. 2a,
FIG. 2b is a side view showing the forming method for carrying out the forming device according to the invention in its initial stage; FIG. 2b is a side view showing the forming device of FIG. 2a in its final stage;
2a is a front view of the forming apparatus of FIG. 2a, FIG. 4a is a side view showing a special configuration of the forming method of the present invention for inducing an azimuth direction, FIG. 4b is a front view of FIG. 4a, and FIG. 6a is a schematic diagram showing a stack of curved plates according to a preferred embodiment of the present invention; FIG. 6a is a top view showing a preferable formation of the aperture aperture for the configuration shown in FIG. 6a, FIG. 7 is a diagram showing the amount of deformation of the curved plate in FIG. 6a with respect to the length of the plate, and FIG. FIG. 9 is a cross-sectional view showing a layer structure of a liquid crystal substrate. FIG. 9 is a cross-sectional view showing another layer structure according to a modified embodiment of the present invention. Explanation of symbols 1... Supply source 2.2'... Plate 3.
...Aperture 4...Aperture aperture 13...
・・・・Surface FIG, 5 1 of lj + harm (no change to round table) FIG, 61] FIG, 8 Procedural amendment (method) Showa era 0°7°I9 Japanese Patent Office Commissioner Michibu Uga 3 , Relationship to the case of the person making the amendment Applicant name: BBC Akchengesernjaft-Brown Bowery Land Company 4, Agent 5, Date of amendment order: June 25, 1985 As shown in the attached document (no change in content) .

Claims (16)

[Claims] (1) A flat surface of at least one plate (2, 2') (
13) emanates from the source (1) and reaches the surface (13).
a) between a source (1) and a plate (2, 2'); Aperture aperture (4
) with a constrictor (3), and (b) the plates (2, 2') and the source (1) are arranged parallel to the surface (13) and approximately at right angles to the direction of the partial flow, approximately constant. c) the surface (13) of the plate (2, 2') is outside the particle flow in the first and second positions; A forming method characterized in that the restrictor opening (4) allows only a stream of particles bounded on both sides in the direction of movement to pass through, such that the particles cross the partial stream during their movement. (2) The diaphragm aperture (4) of the source (1) is fixed during the movement, and the relative movement takes place only by the movement of the plates (2, 2'). Formation method described in section. (3) a) the source (1) is a roughly point-shaped source, b) the aperture aperture (4) is symmetrical to the central plane (5) passing through the source (1), and c) the plates (2, 2 ') is carried out along a straight line perpendicular to the central plane (5).
Formation method described in section. (4) A forming method according to claim 3, characterized in that the boundaries of the diaphragm openings (4) arranged at right angles to the direction of movement extend parallel to each other and are oriented at right angles to the direction of movement. (5) The width (w) of the diaphragm aperture (4) measured in the movement direction is approximately proportional to (r^2/sinβ)(1/r_m・cosδ_m).
4) is shifted within the aperture area related to the plates (2, 2'), and in the above equation, r and β are on the central plane (5) in the polar coordinate system with the source (1) as the origin. represents the polar coordinates of a point lying in the surface (13), which point is connected to the source (1) by a straight line passing through the aperture (4) in the area of the same aperture width (w), r_m, δ_m are in the central plane (
5) represents the length and angle of incidence of one streamline of the particle stream in the particle stream, characterized in that the streamline impinges on the surface (13) of the plate (2) on the horizontal central plane of the plate (2); A forming method according to claim 3. (6) The plate (2, 2') remains concave with respect to the source (1) during the movement, and the line of intersection of the plate (2, 2') with the central plane (5) is essentially r=r_0exp ((β-β_0)/tan(9
According to the transition of the logarithmic spiral of the form 0-δ), in the above equation, r,
β, r_0, β_0 are the polar coordinates of two points on the intersection line of the polar coordinate system with source (1) as the origin, and δ is
4. A method according to claim 3, characterized in that it represents the angle of incidence of the particle stream impinging on the point (r, β). (7) The boundary of the aperture aperture (4) perpendicular to the movement direction is such that the width (w) of the aperture aperture (4) measured in the movement direction is approximately proportional to r/sin β. '), and in the above equation, r and β are
represents the polar coordinates of a point on the surface (13) of the central plane (5) in a polar coordinate system with source (1) as the origin, which point passes through the aperture (4) in the area of the same aperture width (w) 7. A method according to claim 6, characterized in that it is connected to the source (1) by a straight line. (8) The formation according to any one of claims 2 to 7, characterized in that a plurality of plates (2, 2') arranged in a fan shape one after another at right angles to the movement direction are simultaneously moved. Method. (9) at least one rail (7) extending in the direction of movement;
a, 7b) and a wagon or carriage (6) movable along the rails (7a, 7b). A forming device that performs (10) The driven gear (9) is fixed in position, and the driven gear meshes with a worm (8) disposed on the carriage (6) and extending in the direction of movement. Forming device according to item 9. (11) Liquid crystal substrates (2, 2') for the forming method and forming apparatus according to any one of claims 1 to 10.
) comprising: a) a transparent electrode substrate (18); b) a structured electrode layer (20) disposed on the electrode substrate (18); and c) a structured electrode layer disposed on the electrode layer (20). d) an alignment layer (23) for liquid crystal molecules with a thickness of ≦20 nm;
A liquid crystal substrate characterized in that: is arranged on a protective layer (21). (12) A) Electrode substrate (18) is 0.5 mm to 1.5 m
b) Particularly, the electrode substrate (18) has a thickness of about 0.7 mm or about 1.1 mm.
c) the electrode layer (20) is SnO_2 doped In_2;
Claim 11 characterized in that: d) the electrode layer (20) has a thickness of 20 nm to 300 nm; and e) in particular the electrode layer (20) has a thickness of 120 nm to 130 nm. The liquid crystal substrate described. (13) a) one or more spacers (a) of glass fiber or glass bulbs are arranged above the electrode layer (20) in the layered structure; b) one or more spacers (a) have a diameter of 2 ~10μm
c) The liquid crystal substrate according to claim 11 or 12, characterized in that, in particular, the diameter of the spacer (a) is 5 to 8 μm. (14) A) The protective layer (21) is a polyimide layer or a polyimide amide layer, B) The thickness of the protective layer (21) is 2 to 150 nm, and C) In particular, the thickness is 50 to 100 nm. The liquid crystal substrate according to any one of claims 11 to 13, characterized in that: (15) A) A support layer (22) is arranged between the electrode layer (20) and the protective layer (21), B) The support layer (22) at least partially surrounds the spacer (a), and C) 14. The liquid crystal substrate according to claim 13, wherein the support layer (22) has a thickness of 100 nm or less. (16) A) The support layer (22) is substantially Gd_2O_3
b) the protective layer (21) is arranged on the support layer (22), c) the protective layer (21) is a polyimide layer or a polyimide amide layer, and d) the thickness of the protective layer (21) is 16. The liquid crystal substrate according to claim 15, which has a thickness of 2 to 10 nm.