JPS61251025A - Projection exposing apparatus - Google Patents
Projection exposing apparatusInfo
- Publication number
- JPS61251025A JPS61251025A JP60090892A JP9089285A JPS61251025A JP S61251025 A JPS61251025 A JP S61251025A JP 60090892 A JP60090892 A JP 60090892A JP 9089285 A JP9089285 A JP 9089285A JP S61251025 A JPS61251025 A JP S61251025A
- Authority
- JP
- Japan
- Prior art keywords
- stage
- mask
- substrate
- scanning
- original plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 46
- 238000000034 method Methods 0.000 abstract description 7
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 6
- 238000005286 illumination Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
[発明の分野]
本発明は、被露光体に原板上のパターン像、例えば半導
体回路を焼付ける露光装置に関し、特に大画面を分割焼
きする分割走査(ステップアンドスキ・ヤン)形として
好適な投影露光装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of the Invention] The present invention relates to an exposure apparatus that prints a pattern image on an original plate, such as a semiconductor circuit, onto an exposed object, and particularly relates to an exposure apparatus that prints a pattern image on an original plate, such as a semiconductor circuit, onto an exposed object, and particularly relates to a step-and-scan (step-and-skip) exposure apparatus that prints a pattern image on an original plate, such as a semiconductor circuit, onto an exposed object. The present invention relates to a projection exposure apparatus suitable as a Yang type.
[従来の技術の説明]
ミラープロジェクション方式の半導体焼付装置において
は、マスクと基板(またはウェハ)をキャリフジ上に乗
せこれを露光面上にスキャン移動させることにより画面
全体を露光している。[Description of Prior Art] In a mirror projection type semiconductor printing apparatus, the entire screen is exposed by placing a mask and a substrate (or wafer) on a carriage and scanning the carrier onto an exposure surface.
しかし、最近の傾向として、チップコストの低減を目的
としたウェハの大口径化や液晶TV用等の大型の液晶表
示板の製造のため、画面が大型化してくると、露光範囲
を大きくし、かつスキャン長を伸ばさなければならない
ことにより装置が大型化してくるという問題があった。However, as recent trends have shown that screens have become larger due to larger diameter wafers to reduce chip costs and the manufacture of large liquid crystal display panels for LCD TVs, the exposure range has become larger. In addition, there is a problem in that the apparatus becomes larger due to the need to increase the scan length.
この対策として、画面を分割してスキャン焼きを複数回
に分けて行なうステップアンドスキャン焼方式が考えら
れている。As a countermeasure to this problem, a step-and-scan printing method has been considered in which the screen is divided and scan printing is performed multiple times.
第2図は、このようなステップアンドスキャン形の露光
装置として本発明者等が先に提案したものの構成を示す
。同図において、1は焼付パターンが形成されているフ
ォトマスク、2はマスク1を搭載してX、Y、θ方向に
移動可能なマスクステージである。3は液晶表示板を製
造するためにその表面に多数の画素とこれらの画素のオ
ン・オフを制御するためのスイッチングトランジスタが
通常のフォトリソグラフィの手順で形成されるガラス基
板で、対角線の長さが14インチ程度の方形である。4
は基板3を保持してX、Y、θ方向に移動可能な基板ス
テージである。5は凹面鏡と凸面鏡の組み合せからなる
周知のミラー投影系で、マスクステージ2によって所定
位置にアライメントされたマスク1のパターン像を基板
3上へ等倍投影する。6は不図示の光源からの特定の波
長の光で露光位置にあるマスク1を照明する照明光学系
で、マスク上のパターンを介して基板3上の感光層を露
光することにより、マスク上のパターンを基板3に転写
可能とするためのものである。なお、投影系5の光軸は
照明系6の光軸と一致させである。FIG. 2 shows the configuration of such a step-and-scan type exposure apparatus previously proposed by the present inventors. In the figure, 1 is a photomask on which a printed pattern is formed, and 2 is a mask stage on which the mask 1 is mounted and is movable in the X, Y, and θ directions. 3 is a glass substrate on which a large number of pixels and switching transistors for controlling on/off of these pixels are formed by normal photolithography procedures in order to manufacture a liquid crystal display board, and the length of the diagonal line is is about 14 inches square. 4
is a substrate stage that can hold the substrate 3 and move in the X, Y, and θ directions. Reference numeral 5 denotes a well-known mirror projection system consisting of a combination of a concave mirror and a convex mirror, which projects the pattern image of the mask 1 aligned at a predetermined position by the mask stage 2 onto the substrate 3 at the same magnification. Reference numeral 6 denotes an illumination optical system that illuminates the mask 1 at the exposure position with light of a specific wavelength from a light source (not shown), and by exposing the photosensitive layer on the substrate 3 through the pattern on the mask, This is to enable the pattern to be transferred onto the substrate 3. Note that the optical axis of the projection system 5 is made to coincide with the optical axis of the illumination system 6.
7はY方向(紙面に垂直な方向)に設けられた2つのガ
イドレール8に沿って移動可能なLAB(リニアエアベ
アリング)で、一方はX方向(紙面の左右方向)、Z方
向(紙面の上下方向)拘束タイプ、他方はZ方向拘束タ
イプである。9はマスクステージ2と基板ステージ4を
一定の関係で保持するホルダ(キャリッジ)で、LAB
7に支持されることによりマスクステージ2上のマスク
1と基板ステージ4上の基板3とを一体的に移送可能と
している。7 is a LAB (linear air bearing) that can be moved along two guide rails 8 provided in the Y direction (perpendicular to the page), one of which is movable in the X direction (horizontal direction of the page) and Z direction (direction perpendicular to the page). The other type is a Z-direction restraint type. 9 is a holder (carriage) that holds the mask stage 2 and substrate stage 4 in a fixed relationship;
7, the mask 1 on the mask stage 2 and the substrate 3 on the substrate stage 4 can be integrally transferred.
11はマスク搬送装置で、複数のマスク1がセットされ
ており、所望のマスクをホルダ9の移送によって基板3
が分割露光されるごとにマスクステージ2に搬送する。Reference numeral 11 denotes a mask conveying device in which a plurality of masks 1 are set, and a desired mask is transferred to a substrate 3 by a holder 9.
The mask is transported to the mask stage 2 every time it is subjected to divided exposure.
12は投影系5のピント面と基板3の表面との間隔を検
出するためのギャップセンサで、例えばエアマイクロセ
ンサや、基板3からの反射光で間隔を検出する光電タイ
プのセンサである。13は投影系5、照明系6およびガ
イドレール8を一定の関係で取付けるための基台である
。Reference numeral 12 denotes a gap sensor for detecting the distance between the focal plane of the projection system 5 and the surface of the substrate 3, and is, for example, an air microsensor or a photoelectric type sensor that detects the distance using reflected light from the substrate 3. Reference numeral 13 denotes a base on which the projection system 5, illumination system 6, and guide rail 8 are mounted in a fixed relationship.
ところで、同図の装置は、基板3をステップ移動させる
だめの基板ステージ4や、基板3上の各焼付対象部分に
対応してマスク1を交換するためのマスク搬送装置11
およびマスクステージ2等をキャリッジ9に搭載してい
るが、この場合、基板ステージ4だけでも例えば40K
l)程度と比較的重く、キャリッジ9をエアで浮上させ
ているLAB7への負荷が大きくなり、平滑な走査が困
難になる。さらに、キャリッジは軽量化の要請から柔構
造となり勝ちであり、キャリッジ9が基板ステージ4等
の重量によって変形し、マスク1および基板3とミラー
投影系5との距離が変化してデフォーカスしたり、基板
3をステップ送りするため基板ステージ4を移動すると
マスク1の位置決め基準と基板3の位置決め基準との相
対ずれが発生して分割焼きした各バタニン間に段差や重
なりや逆に隙間が生じるという不都合があった。By the way, the apparatus shown in the figure includes a substrate stage 4 for moving the substrate 3 step by step, and a mask conveying device 11 for exchanging the mask 1 corresponding to each part of the substrate 3 to be printed.
The mask stage 2 and the like are mounted on the carriage 9, but in this case, the substrate stage 4 alone is 40K
1), and the load on the LAB 7 that levitates the carriage 9 with air becomes large, making smooth scanning difficult. Furthermore, the carriage is likely to have a flexible structure due to the demand for weight reduction, and the carriage 9 may be deformed by the weight of the substrate stage 4, etc., and the distance between the mask 1 and the substrate 3 and the mirror projection system 5 may change, resulting in defocusing. When the substrate stage 4 is moved to feed the substrate 3 step by step, a relative deviation occurs between the positioning reference of the mask 1 and the positioning reference of the substrate 3, resulting in steps, overlaps, or gaps between the separately baked batonins. There was an inconvenience.
[発明の目的]
本発明は、前述の問題点に鑑みてなされたもので、構造
のより簡略なステップアンドスキャン形露光装置を提供
することを第1の目的とする。また、走査時の可動部の
重量を減少させてより平滑な走査を可能にすることを第
2の目的とする。さらに、解像度や焼付精度を高レベル
に保つことを第3の目的とする。[Object of the Invention] The present invention has been made in view of the above-mentioned problems, and a first object of the present invention is to provide a step-and-scan type exposure apparatus with a simpler structure. A second purpose is to reduce the weight of the movable part during scanning to enable smoother scanning. Furthermore, the third objective is to maintain resolution and printing accuracy at a high level.
[実施例の説明] 以下、図面を用いて本発明の詳細な説明する。[Explanation of Examples] Hereinafter, the present invention will be explained in detail using the drawings.
なお、従来例と共通または対応する部分については同一
の符号で表わす。Note that parts common or corresponding to those of the conventional example are represented by the same reference numerals.
第1図は、本発明の一実施例に係るミラープロジェクシ
ョン露光装置の構成を示す。同図は、第2図が装置のx
7平面による断面を示すのに対し、YZ平面による断面
を示したものである。但し、Y方向を焼付は時の走査方
向、Z方向を鉛直方向とする。FIG. 1 shows the configuration of a mirror projection exposure apparatus according to an embodiment of the present invention. In the same figure, Fig. 2 is the x
In contrast to the cross section taken along the 7 plane, the cross section taken along the YZ plane is shown. However, the Y direction is the scanning direction during printing, and the Z direction is the vertical direction.
第1図の装置は、第2図のものに対し、ホルダ9を基台
13に固定し、かつマスクステージ2および基板ステー
ジ4のY方向のストロークをマスク1および基板3を投
影光学系5に対して走査し得る程度に延長するとともに
、走査時、これらのマスクステージ2および基板ステー
ジ4のY・方向への移動量を同期制御する制御回路15
を付加したものである。第1図において、16および1
7はそれぞれマスクステージ2および基板ステージ4を
Y方向に移動させるためのパルスモータ、18および1
9はそれぞれ各ステージ2.4すなわちマスク1および
基板3の位置をモニタするための測長器例えばレーザ干
渉計である。また、51.52.53は、それぞれ、投
影光学系5を構成する台形ミラー、凸面ミラーおよび凹
面ミラーである。The apparatus shown in FIG. 1 is different from the apparatus shown in FIG. A control circuit 15 extends to an extent that can scan the mask stage 2 and the substrate stage 4, and synchronously controls the amount of movement of the mask stage 2 and substrate stage 4 in the Y direction during scanning.
is added. In Figure 1, 16 and 1
7 are pulse motors 18 and 1 for moving the mask stage 2 and substrate stage 4 in the Y direction, respectively.
Reference numerals 9 denote length measuring devices, such as laser interferometers, for monitoring the positions of each stage 2.4, that is, the mask 1 and the substrate 3, respectively. Further, 51, 52, and 53 are a trapezoidal mirror, a convex mirror, and a concave mirror, respectively, which constitute the projection optical system 5.
上記構成において、制御回路15は、走査露光時、レー
ザ干渉計18および19からのステージ位置情報を基に
パルスモータ16および17への駆動パルスのパルス数
および周期を制御することにより、ステージ2および4
を互いに同期して移動させる。この制御の方法としては
、例えばモータ16を一定周期のパルスで駆動してマス
クステージ2を定速走行させ、レーザ干渉計18および
19で計測されるステージ2および4の位置に応じた駆
動パルスをモータ17に供給して基板ステージ4を移動
すればよい。In the above configuration, the control circuit 15 controls the number and cycle of drive pulses to the pulse motors 16 and 17 based on the stage position information from the laser interferometers 18 and 19 during scanning exposure. 4
move in sync with each other. As a method of this control, for example, the motor 16 is driven with pulses of a constant period to move the mask stage 2 at a constant speed, and the drive pulses are applied according to the positions of the stages 2 and 4 measured by the laser interferometers 18 and 19. The substrate stage 4 may be moved by supplying it to the motor 17.
この場合、各ステージ2および4の移動速度は、必ずし
も同一である必要はなく、適当な速度比を持たせてもよ
い。例えばレーザ干渉計18および19の出力波長を異
ならせるだけでも上記ステージ2゜4を異なる速度(速
度比?1)で走゛査することができる。また、より積極
的に上記制御回路15に上記速度比の可変手段を設け、
上記ステージ2,4を図示しないコンソールキーボード
等からの指令に基づく速度比で駆動するようにしてもよ
い。このようにマスク1と基板3の走査速度を異ならせ
た場合、基板3の速度をマスク1の速度より遅くすると
基板3上にはマスク像が走行方向(Y方向)に縮小され
て転写される。また、基板3の速度の方を速くすると基
板3上にはマスク像がY方向に拡大されて転写される。In this case, the moving speeds of the stages 2 and 4 do not necessarily have to be the same, and may have an appropriate speed ratio. For example, simply by changing the output wavelengths of the laser interferometers 18 and 19, the stage 2.4 can be scanned at different speeds (velocity ratio -1). In addition, the control circuit 15 is further provided with means for varying the speed ratio,
The stages 2 and 4 may be driven at a speed ratio based on a command from a console keyboard (not shown) or the like. When the scanning speeds of the mask 1 and the substrate 3 are made different in this way, if the speed of the substrate 3 is made slower than the speed of the mask 1, the mask image is transferred onto the substrate 3 in a reduced size in the running direction (Y direction). . Furthermore, when the speed of the substrate 3 is increased, the mask image is enlarged and transferred onto the substrate 3 in the Y direction.
すなわち、走査形の露光装置に1軸(Y)方向のみでは
あるが、拡大・縮小機能を持たせることができる。そし
て、この機能、特に拡大機能を活用すれば、例えば現在
、マスクサイズの点から縦(Y)・横(X)に4分割し
てステップアンドスキャンしていたものが、縦方向を2
倍に拡大(基板速度/マスク速度=2)することにより
同一サイズのマスクで縦方向の2分割のみで足りること
となり、基板のステップ移動およびマスク交換の回数を
減少して装置のスルーブツトを向上させることができる
他、マスク制作の手間も4枚を2枚分に減らすことがで
きる。That is, a scanning type exposure device can be provided with an enlargement/reduction function, although only in one axis (Y) direction. If you utilize this function, especially the enlargement function, for example, the current step-and-scan method that divides the mask size into 4 vertically (Y) and horizontally (X) sections can be changed to 2 vertically scanned sections.
By doubling the size (substrate speed/mask speed = 2), it is sufficient to divide the same size mask into two in the vertical direction, reducing the number of substrate step movements and mask exchanges, and improving the throughput of the device. In addition to this, the time required to make masks can be reduced from four to two.
[発明の応用例]
なお、上述の実施例においては、マスクステージ2と基
板ステージ4とを電気的に同期制御しているが、例えば
1つのモータの動力を歯車1.チェーン、ベルト、ロッ
ド、クランク、梃等の機械部品を介して各ステージ2,
4に伝達することにより、これらのステージ2.4を等
速または異なる速度で同期的に走査さ一往ることも可能
である。[Application Example of the Invention] In the above embodiment, the mask stage 2 and the substrate stage 4 are electrically synchronously controlled, but for example, the power of one motor is transferred to the gear 1. Each stage 2, through mechanical parts such as chains, belts, rods, cranks, levers, etc.
4, it is also possible to scan these stages 2.4 synchronously at the same speed or at different speeds.
[発明の効果]
以上のように、本発明によると、マスクおよび基板ステ
ージを保持するためのホルダ(キャリッジ)を走行させ
る必要がないため、キャリッジを浮上させるためのLA
Bが不要になるとともに、マスクおよび基板を走行させ
るためのステージやモータならびに制御回路、さらにマ
スクおよび基板の位置を検出するための測長器等は、本
来マスクおよび基板の位置合せ等のために必要なものを
そのまま、または多少変形して用いることができるため
、装置の構成を簡略化することができる。[Effects of the Invention] As described above, according to the present invention, there is no need to run the holder (carriage) for holding the mask and substrate stage, and therefore the LA for floating the carriage is not required.
B becomes unnecessary, and the stage, motor, and control circuit for moving the mask and substrate, as well as the length measuring device for detecting the position of the mask and substrate, are originally used for aligning the mask and substrate. Since necessary components can be used as they are or with some modification, the configuration of the device can be simplified.
同時に、LABのエアパッドの剛性の問題特にこの剛性
の不足による走行の不安定性の問題が解消される。また
、上記ホルダは基台に固定することができるため、より
堅固に構成することができ、ホルダの変形に伴うマスク
と基板の相対位置精度およびデフォ・−カスを軽減ない
し防止することができる。At the same time, the problem of the rigidity of the LAB air pad, particularly the problem of running instability due to lack of rigidity, is solved. Furthermore, since the holder can be fixed to a base, it can be constructed more firmly, and the relative positional accuracy and defocus between the mask and the substrate due to deformation of the holder can be reduced or prevented.
さらに、マスクと基板との走行速度比を任意に設定する
ことができ、このため、従来の走査形露光装置にはなか
った拡大・縮小機能を実現させることができる。Furthermore, the traveling speed ratio between the mask and the substrate can be set arbitrarily, and therefore it is possible to realize an enlargement/reduction function that is not available in conventional scanning exposure apparatuses.
第1図は本発明の一実施例に係る半導体焼付装置の概略
構成図、
第2図は本発明者等の先願に係る半導体焼付装置の概略
構成図である。
1:フォトマスク、2:マスクステージ、3:基板、4
:基板ステージ、5:ミラー投影系、9:ホルダ(キャ
リッジ)、13:基台、15:制御回路、16.17ニ
バルスモータ、18、19:レーザ干渉計。FIG. 1 is a schematic diagram of a semiconductor printing apparatus according to an embodiment of the present invention, and FIG. 2 is a schematic diagram of a semiconductor printing apparatus according to an earlier application by the present inventors. 1: Photomask, 2: Mask stage, 3: Substrate, 4
: Substrate stage, 5: Mirror projection system, 9: Holder (carriage), 13: Base, 15: Control circuit, 16.17 Nibals motor, 18, 19: Laser interferometer.
Claims (1)
学系に対して走査させることにより原板の像を被露光体
上に転写する投影露光装置であつて、上記原板を移送す
る手段と上記被露光体を移送する手段とを別個に設け、
かつ上記原板と被露光体とを走査する際にこれらの移送
手段を同期的に駆動する駆動手段を設けたことを特徴と
する投影露光装置。 2、前記2つの移送手段が、それぞれ、前記原板を搭載
する第1のXYステージとこのステージを前記走査方向
に一致する一方の軸方向に移動させる第1のモータ、お
よび前記被露光体を搭載する第2のXYステージとこの
ステージを前記走査方向に一致する一方の軸方向に移動
させる第2のモータであり、前記駆動手段が、上記第1
および第2のXYステージの位置を検出する第1および
第2の測長手段とこれらの測長手段の出力に基づいて上
記第1および第2のモータを電気的に同期制御する制御
回路とを具備するものである特許請求の範囲第1項記載
の投影露光装置。 3、前記駆動手段が、前記走査の際、前記2つの移送手
段を相対的に異なる速度で駆動する特許請求の範囲第1
または2項記載の投影露光装置。 4、前記駆動手段が、前記2つの移送手段の前記走査時
における速度比を調節または切換る手段を具備する特許
請求の範囲第1または2項記載の投影露光装置。[Scope of Claims] 1. A projection exposure apparatus that transfers an image of an original plate onto an exposed object by scanning the original plate and the exposed object with a projection optical system in a state in which the original plate and the exposed object are aligned in position, Separately providing a means for transporting the original plate and a means for transporting the exposed object,
A projection exposure apparatus further comprising a drive means for driving the transport means synchronously when scanning the original plate and the object to be exposed. 2. The two transport means each include a first XY stage on which the original plate is mounted, a first motor that moves this stage in one axis direction that coincides with the scanning direction, and the object to be exposed. and a second motor that moves this stage in one axial direction that coincides with the scanning direction, and the driving means
and first and second length measuring means for detecting the position of the second XY stage, and a control circuit for electrically synchronously controlling the first and second motors based on the outputs of these length measuring means. A projection exposure apparatus according to claim 1. 3. Claim 1, wherein the driving means drives the two transport means at relatively different speeds during the scanning.
Or the projection exposure apparatus according to item 2. 4. The projection exposure apparatus according to claim 1 or 2, wherein the driving means includes means for adjusting or switching the speed ratio of the two transport means during the scanning.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60090892A JPS61251025A (en) | 1985-04-30 | 1985-04-30 | Projection exposing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60090892A JPS61251025A (en) | 1985-04-30 | 1985-04-30 | Projection exposing apparatus |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP30942494A Division JP2670984B2 (en) | 1994-11-21 | 1994-11-21 | Device manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61251025A true JPS61251025A (en) | 1986-11-08 |
JPH0515054B2 JPH0515054B2 (en) | 1993-02-26 |
Family
ID=14011059
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60090892A Granted JPS61251025A (en) | 1985-04-30 | 1985-04-30 | Projection exposing apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61251025A (en) |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63128713A (en) * | 1986-11-19 | 1988-06-01 | Matsushita Electric Ind Co Ltd | Correction of distortion in scanning aligner |
JPH03179723A (en) * | 1989-12-07 | 1991-08-05 | Matsushita Electric Ind Co Ltd | Projection aligner |
US5581605A (en) * | 1993-02-10 | 1996-12-03 | Nikon Corporation | Optical element, production method of optical element, optical system, and optical apparatus |
US5640284A (en) * | 1992-09-11 | 1997-06-17 | Nikon Corporation | Optical reflector, illumination optical system, light source system and illumination optical apparatus |
US5796469A (en) * | 1993-06-30 | 1998-08-18 | Canon Kabushiki Kaisha | Exposure apparatus and device manufacturing method using the same |
USRE37391E1 (en) | 1991-03-06 | 2001-09-25 | Nikon Corporation | Exposure method and projection exposure apparatus |
KR100492278B1 (en) * | 1996-07-05 | 2005-08-31 | 가부시키가이샤 니콘 | Projection exposure equipment |
US20130271945A1 (en) | 2004-02-06 | 2013-10-17 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
US8854601B2 (en) | 2005-05-12 | 2014-10-07 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
US9341954B2 (en) | 2007-10-24 | 2016-05-17 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
US9423698B2 (en) | 2003-10-28 | 2016-08-23 | Nikon Corporation | Illumination optical apparatus and projection exposure apparatus |
US9678437B2 (en) | 2003-04-09 | 2017-06-13 | Nikon Corporation | Illumination optical apparatus having distribution changing member to change light amount and polarization member to set polarization in circumference direction |
US9678332B2 (en) | 2007-11-06 | 2017-06-13 | Nikon Corporation | Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method |
US9885872B2 (en) | 2003-11-20 | 2018-02-06 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and exposure method with optical integrator and polarization member that changes polarization state of light |
US10101666B2 (en) | 2007-10-12 | 2018-10-16 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and device manufacturing method |
WO2019184992A1 (en) * | 2018-03-30 | 2019-10-03 | 上海微电子装备(集团)股份有限公司 | Movement control apparatus, movement control method, mask table system, and mask aligner |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5021232A (en) * | 1973-06-28 | 1975-03-06 | ||
JPS53124417A (en) * | 1977-03-26 | 1978-10-30 | Hitachi Shipbuilding Eng Co | Method of scanning models and its system |
JPS56111218A (en) * | 1980-01-07 | 1981-09-02 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Projection and exposuring device |
JPS5835547A (en) * | 1981-08-27 | 1983-03-02 | Canon Inc | Image forming device |
-
1985
- 1985-04-30 JP JP60090892A patent/JPS61251025A/en active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5021232A (en) * | 1973-06-28 | 1975-03-06 | ||
JPS53124417A (en) * | 1977-03-26 | 1978-10-30 | Hitachi Shipbuilding Eng Co | Method of scanning models and its system |
JPS56111218A (en) * | 1980-01-07 | 1981-09-02 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Projection and exposuring device |
JPS5835547A (en) * | 1981-08-27 | 1983-03-02 | Canon Inc | Image forming device |
Cited By (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63128713A (en) * | 1986-11-19 | 1988-06-01 | Matsushita Electric Ind Co Ltd | Correction of distortion in scanning aligner |
JPH0529129B2 (en) * | 1986-11-19 | 1993-04-28 | Matsushita Electric Ind Co Ltd | |
JPH03179723A (en) * | 1989-12-07 | 1991-08-05 | Matsushita Electric Ind Co Ltd | Projection aligner |
USRE37391E1 (en) | 1991-03-06 | 2001-09-25 | Nikon Corporation | Exposure method and projection exposure apparatus |
USRE37913E1 (en) | 1991-03-06 | 2002-11-26 | Nikon Corporation | Exposure method and projection exposure apparatus |
USRE37946E1 (en) | 1991-03-06 | 2002-12-31 | Nikon Corporation | Exposure method and projection exposure apparatus |
USRE38038E1 (en) | 1991-03-06 | 2003-03-18 | Nikon Corporation | Exposure method and projection exposure apparatus |
USRE38085E1 (en) | 1991-03-06 | 2003-04-22 | Nikon Corporation | Exposure method and projection exposure apparatus |
US5640284A (en) * | 1992-09-11 | 1997-06-17 | Nikon Corporation | Optical reflector, illumination optical system, light source system and illumination optical apparatus |
US5581605A (en) * | 1993-02-10 | 1996-12-03 | Nikon Corporation | Optical element, production method of optical element, optical system, and optical apparatus |
US5796469A (en) * | 1993-06-30 | 1998-08-18 | Canon Kabushiki Kaisha | Exposure apparatus and device manufacturing method using the same |
KR100492278B1 (en) * | 1996-07-05 | 2005-08-31 | 가부시키가이샤 니콘 | Projection exposure equipment |
US9885959B2 (en) | 2003-04-09 | 2018-02-06 | Nikon Corporation | Illumination optical apparatus having deflecting member, lens, polarization member to set polarization in circumference direction, and optical integrator |
US9678437B2 (en) | 2003-04-09 | 2017-06-13 | Nikon Corporation | Illumination optical apparatus having distribution changing member to change light amount and polarization member to set polarization in circumference direction |
US9760014B2 (en) | 2003-10-28 | 2017-09-12 | Nikon Corporation | Illumination optical apparatus and projection exposure apparatus |
US9423698B2 (en) | 2003-10-28 | 2016-08-23 | Nikon Corporation | Illumination optical apparatus and projection exposure apparatus |
US9885872B2 (en) | 2003-11-20 | 2018-02-06 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and exposure method with optical integrator and polarization member that changes polarization state of light |
US10281632B2 (en) | 2003-11-20 | 2019-05-07 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and exposure method with optical member with optical rotatory power to rotate linear polarization direction |
US20130271945A1 (en) | 2004-02-06 | 2013-10-17 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
US10241417B2 (en) | 2004-02-06 | 2019-03-26 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
US10234770B2 (en) | 2004-02-06 | 2019-03-19 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
US10007194B2 (en) | 2004-02-06 | 2018-06-26 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
US9360763B2 (en) | 2005-05-12 | 2016-06-07 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
US9891539B2 (en) | 2005-05-12 | 2018-02-13 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
US8854601B2 (en) | 2005-05-12 | 2014-10-07 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
US9310696B2 (en) | 2005-05-12 | 2016-04-12 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
US9429851B2 (en) | 2005-05-12 | 2016-08-30 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
US10101666B2 (en) | 2007-10-12 | 2018-10-16 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and device manufacturing method |
US9341954B2 (en) | 2007-10-24 | 2016-05-17 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
US9857599B2 (en) | 2007-10-24 | 2018-01-02 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
US9678332B2 (en) | 2007-11-06 | 2017-06-13 | Nikon Corporation | Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method |
WO2019184992A1 (en) * | 2018-03-30 | 2019-10-03 | 上海微电子装备(集团)股份有限公司 | Movement control apparatus, movement control method, mask table system, and mask aligner |
Also Published As
Publication number | Publication date |
---|---|
JPH0515054B2 (en) | 1993-02-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5721606A (en) | Large-area, high-throughput, high-resolution, scan-and-repeat, projection patterning system employing sub-full mask | |
US4748477A (en) | Exposure apparatus | |
US4878086A (en) | Flat panel display device and manufacturing of the same | |
JPS61251025A (en) | Projection exposing apparatus | |
US5933215A (en) | Exposure apparatus and device manufacturing method using the same | |
US4864360A (en) | Exposure apparatus | |
US5923403A (en) | Simultaneous, two-sided projection lithography system | |
US6665054B2 (en) | Two stage method | |
US4814830A (en) | Flat panel display device and manufacturing of the same | |
JPH0584663B2 (en) | ||
KR20120045023A (en) | Pattern forming device, pattern forming method, and device manufacturing method | |
CN113204177A (en) | Exposure apparatus, method for manufacturing flat panel display, method for manufacturing device, and exposure method | |
JP3796367B2 (en) | Stage control method, exposure method, exposure apparatus, and device manufacturing method | |
JP5489534B2 (en) | Exposure apparatus and device manufacturing method | |
JPH0917718A (en) | Aligner and device, and manufacturing method using it | |
US6342943B1 (en) | Exposure apparatus | |
JP3126645B2 (en) | Scanning exposure apparatus, device manufacturing method and device | |
JPH11212266A (en) | Scanning aligner | |
JP2670984B2 (en) | Device manufacturing method | |
KR100889581B1 (en) | Improved lithography scanner throughput | |
JP2000012422A (en) | Aligner | |
US6630986B2 (en) | Scanning type exposure apparatus and a device manufacturing method using the same | |
JP2670984C (en) | ||
JPH0154854B2 (en) | ||
JPS61247026A (en) | Exposure equipment |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |