JPS61246368A - Depositing method for metallic film - Google Patents

Abstract

PURPOSE:To deposit a metallic film which is controlled in a film thickness distribution by impressing a vertical magnetic field to a target surface and changing the magnetic field distribution thereby charging the sputter erosion pattern of the target surface. CONSTITUTION:The magnetic field 100 is vertically impressed to the target 20 surface by using a coil 5 from the outside of an ordinary flat plate magnetron sputtering device. The annular erosion region moves toward the center of the target 20 when the current of a coil 10 is increased. The erosion region moves to the periphery of the target 20 when the coil current is decreased. The max. value in the deposition distribution moves from the central part toward the periphery according to said movement and therefore the deposition distribution where the thickness is larger in the peripheral part than in the center is realized. the overetching in aluminum dry etching of the subsequent stage is prevented by the above-mentioned method in a wiring stage of a process for producing a semiconductor integrated circuit.

Description

[Detailed Description of the Invention] [Industrial Field of Application] The present invention is directed to a direct current flat plate magnetron. This invention relates to a method of depositing a metal film using the ivy method.

[Conventional technology]

Conventionally, in depositing a metal film by the galvanic plate magnetron sputtering method, a permanent magnet or an electromagnet is placed on the back side of a metal target to confine plasma in a ring shape on the target surface.

[Problem that the invention seeks to solve]

In the above-mentioned conventional technology, the deposition distribution of the deposited film is such that when the substrate is placed facing the target, the center is thick;
It is normal for the periphery of the substrate to be thinner.

In the wiring process of the semiconductor integrated circuit manufacturing process, there is usually a difference of about 5-5 in the deposition distribution between the center and the periphery.

In the post-process aluminum dry etching process, the etching rate is about 5% faster on the periphery than on the center.
The present invention provides a method for depositing a metal film that solves the above-mentioned problem. This is a metal film deposition method characterized by depositing a metal film with controlled film thickness distribution by changing the magnetic field distribution by applying a perpendicular magnetic field from the outside.

〔Example〕

Hereinafter, one embodiment of the present invention will be described with reference to the drawings.

The present invention applies a magnetic field perpendicular to the target surface in the flat plate magnetron A' vine method, and changes the magnetic field distribution to change the sp/y and a4 turns of the target surface, thereby causing damage to the substrate. The flying direction of the spun particles is changed, and the deposition distribution is made to be thicker at the periphery than at the center.

FIG. 1 shows an apparatus for implementing the invention. target 20
Since the four turns of surface erosion are mainly determined by the component perpendicular to the target surface, a vacuum chamber 15 is used in the flat magnetron.
By applying a vertical magnetic field of 100 t from outside by the coil 10 and changing the coil current (DC) value,
Try to change the vertical magnetic field strength. At this time, in order to effectively apply a magnetic field by the external coil 10, the permanent magnet or electromagnet 30 directly in front of the target 20 is made the weakest magnet within the range where magnetron discharge can be maintained. 40 is a copper plate, 50 is a shield, 60 is a substrate, 70 is a heater, 80 is an anode, and 90 is a cathode. 110 is the exhaust system, 1
20 is cooling water, 130 is a gas inlet, and 140 is a cylinder.

As described above, according to this embodiment, a normal flat magnetron/
First, use a 10mm film from the outside of the device to remove the 4"
) A magnetic field of 100 f is applied perpendicular to the 20 plane.

When the current in the coil 10 is increased, the ring-shaped eroded area moves toward the center of the target, and when the coil current is decreased, it moves toward the periphery of the target. Along with this, the maximum value of the deposition distribution moves from the center to the periphery, so it is possible to achieve a thicker deposition distribution in the periphery than in the center. The thickness of the film from the center to the periphery is 5.
% thicker.

〔Effect of the invention〕

As explained above, the present invention moves the eroded region within the target plane by applying a perpendicular magnetic field from the outside of a normal DC flat magnetron, thereby changing the deposition distribution. This has the effect of preventing over-etching in the aluminum P lie etch in the subsequent process in the wiring process.

[Brief explanation of the drawing]

FIG. 1 is a schematic cross-sectional view of an apparatus showing an embodiment of the present invention. 10... Coil, 20... Terdoubt, 30...
Permanent magnet, 60... Substrate, 70... Heater, 80.
...Anode, 90...Cathode, 150...Vacuum chamber.

Claims (1)

[Claims] (1) By applying a perpendicular magnetic field from the outside of a DC flat magnetron, the magnetic field distribution is changed, the eroded region is moved within the target plane, and a metal film with a controlled film thickness distribution is deposited. Method of depositing metal films.