JPS61194756A - Resin seal type semiconductor device - Google Patents
Resin seal type semiconductor deviceInfo
- Publication number
- JPS61194756A JPS61194756A JP60033689A JP3368985A JPS61194756A JP S61194756 A JPS61194756 A JP S61194756A JP 60033689 A JP60033689 A JP 60033689A JP 3368985 A JP3368985 A JP 3368985A JP S61194756 A JPS61194756 A JP S61194756A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- semiconductor device
- resin composition
- resin
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の技術分野］
本発明は、発光ダイオード（ＬＥＤ）等を、透明性に優
れ、輝度劣化の少ないエポキシ樹脂組成物で封止した樹
脂封止型半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a resin-sealed semiconductor device in which a light-emitting diode (LED) or the like is sealed with an epoxy resin composition that has excellent transparency and exhibits little brightness deterioration.
［発明の技術的背景とその問題点］
近年、種々の表示用等に実用化されているＬＥＤ等の発
光装置は、液状低粘度のエポキシ樹脂等で樹脂封止して
製造されている。[Technical Background of the Invention and Problems thereof] In recent years, light emitting devices such as LEDs, which have been put into practical use for various display purposes, are manufactured by being sealed with a liquid low-viscosity epoxy resin or the like.
しかしながら、一般に用いられているエポキシ樹脂によ
る封止では、硬化時および冷却時に生ずる内部応力によ
って、発光素子の輝度（発光効率）が通電により著しく
低下してゆくという問題があった。 一般に応力の低下
を改善するためには、無機質充填剤等を多量に加える方
法や、軟化点の低い樹脂を用いる方法が採られる。 し
かし、充填剤を加える方法は発光素子の樹脂封止の場合
には透明性が必要であり、また高粘度になるため用いる
ことができない。 更に軟化度の低い樹脂を用いること
は、半導体装置が耐熱性を必要とすることから、これま
た樹脂封止用として採用できないという問題があった。However, the commonly used epoxy resin sealing has a problem in that the brightness (luminous efficiency) of the light emitting element decreases significantly when energized due to internal stress generated during curing and cooling. Generally, in order to improve the reduction in stress, a method of adding a large amount of an inorganic filler or the like or a method of using a resin with a low softening point is adopted. However, the method of adding a filler cannot be used when resin-sealing a light-emitting element because transparency is required and the viscosity becomes high. Furthermore, the use of a resin with a low softening degree has the problem that it cannot be used for resin sealing because the semiconductor device requires heat resistance.
［発明の目的］
本発明の目的は、前記の問題点を解消するためになされ
たもので、透明性に優れ、低応力で輝度劣化が少なく、
かつ耐熱性のよい低粘度のエポキシ樹脂組成物により、
発・受光素子等を封止した樹脂封止型半導体装置を提供
しようとするものである。[Object of the Invention] The object of the present invention was to solve the above-mentioned problems, and it has excellent transparency, low stress, little brightness deterioration, and
With a low viscosity epoxy resin composition that also has good heat resistance,
The present invention aims to provide a resin-sealed semiconductor device in which a light emitting/receiving element and the like are sealed.
［発明の概要］
本発明者等は、上記の目的を達成しようと鋭意研究を重
ねた結果、第三級フォスファイト類化合物を配合したエ
ポキシ樹脂組成物で樹脂封止すれば、透明で輝度劣化の
少ない、かつ耐熱性に優れた樹脂封止型半導体装置が得
られることを見いだし、本発明を完成させたものである
。[Summary of the Invention] As a result of intensive research to achieve the above object, the inventors of the present invention have found that if the epoxy resin composition containing a tertiary phosphite compound is encapsulated with a resin, it will be transparent and the brightness will not deteriorate. The present invention has been completed based on the discovery that a resin-sealed semiconductor device with less heat resistance and excellent heat resistance can be obtained.
即ち、本発明は、エポキシ樹脂、硬化剤、硬化促進剤お
よび第三級フォスファイト類化合物を含むエポキシ樹脂
組成物で、発・受光素子を封止してなることを特徴とす
る樹脂封止型半導体装置であり、第三級フォスファイト
類化合物がエポキシ樹脂組成物に対して０．０５〜８重
量％含有するものである。That is, the present invention provides a resin-sealed type characterized in that a light-emitting/light-receiving element is sealed with an epoxy resin composition containing an epoxy resin, a curing agent, a curing accelerator, and a tertiary phosphite compound. It is a semiconductor device, and the tertiary phosphite compound is contained in an amount of 0.05 to 8% by weight based on the epoxy resin composition.
本発明に用いるエポキシ樹脂としては、ビスフェノール
Ａ型エポキシ樹脂、ビスフェノールＦ型エポキシ樹脂、
フェノールノボラック型エポキシ樹脂、クレゾールノボ
ラック型エポキシ樹脂、脂環式エポキシ樹脂、含複素環
エポキシ樹脂、水添ビスフェノールＡ型エポキシ樹脂、
脂肪族系エポキシ樹脂、芳香族・脂肪族もしくは脂環式
のカルボン酸とエピクロルヒドリンとの反応によって得
られるエポキシ樹脂、スピロ環含有エポキシ樹脂等が挙
げられる。 市販品の例としては、エピコート８０７，
８２７，８２８，８３４，１００１゜１００４（油化シ
ェル社製、商品名）、アラルダイトＣＹ−１７５，１８
２，１８３（チバガイキー社製、商品名）、ＤＥＮ４３
１．４３８゜ＤＥＲ３３２（ダウケミカル社製、商品名
）、セロキサイド２０２１ （ダイセル化学社製、商品
名）、アデカレジンＥＰ４０８０ （旭電化工業社製、
商品名）等が挙げられ、これらは単独もしくは２種以上
混合して使用する。The epoxy resin used in the present invention includes bisphenol A epoxy resin, bisphenol F epoxy resin,
Phenol novolac type epoxy resin, cresol novolac type epoxy resin, alicyclic epoxy resin, heterocyclic epoxy resin, hydrogenated bisphenol A type epoxy resin,
Examples include aliphatic epoxy resins, epoxy resins obtained by reacting aromatic, aliphatic or alicyclic carboxylic acids with epichlorohydrin, and spiro ring-containing epoxy resins. Examples of commercially available products include Epicote 807,
827,828,834,1001゜1004 (manufactured by Yuka Shell Co., Ltd., trade name), Araldite CY-175,18
2,183 (manufactured by Ciba Gaiki Co., Ltd., product name), DEN43
1.438° DER332 (manufactured by Dow Chemical Co., Ltd., trade name), Celoxide 2021 (manufactured by Daicel Chemical Co., Ltd., trade name), Adekal Resin EP4080 (manufactured by Asahi Denka Kogyo Co., Ltd.,
(trade name), and these may be used alone or in combination of two or more.
本発明に用いる硬化剤としては、カルボン酸無水物が挙
げられる。 具体的には、無水フタル酸、無水テトラヒ
ドロフタル酸、無水３．６エンドメチレンテトラヒドロ
フタル酸、無水へキサヒドロフタル酸、無水メチルへキ
サヒドロフタル酸、無水コハク酸、無水アジピン酸、無
水マレイン酸、ピロメリット酸二無水物等がある。 こ
れらの無水物は十分に精製された着色の少ないものを使
用することが望ましい。 エポキシ樹脂に配合する割合
は、１エポキシ当量に対し、０．５〜１．８当量の範囲
が好ましい。 これらのカルボン酸無水物は単独もしく
は２種以上混合して使用する。Examples of the curing agent used in the present invention include carboxylic acid anhydrides. Specifically, phthalic anhydride, tetrahydrophthalic anhydride, 3.6 endomethylenetetrahydrophthalic anhydride, hexahydrophthalic anhydride, methylhexahydrophthalic anhydride, succinic anhydride, adipic anhydride, maleic anhydride. , pyromellitic dianhydride, etc. It is desirable to use sufficiently purified anhydrides with little coloration. The proportion blended into the epoxy resin is preferably in the range of 0.5 to 1.8 equivalents per 1 epoxy equivalent. These carboxylic acid anhydrides may be used alone or in combination of two or more.
本発明に用いる硬化促進剤としては、第三級アミン類、
イミダゾール類、カルボン酸金属塩、第四級アンモニウ
ム塩、第四級リン酸塩、ジアザ−ビシクロ−アルケン類
およびその塩類等が挙げられ、これらは単独もしくは２
種以上混合して使用する。 硬化促進剤の配合量は、エ
ポキシ樹脂又はエポキシ樹脂とカルボン酸無水物硬化剤
の合計量に対し０．０５〜７．０重量％配合することが
好ましい。The curing accelerator used in the present invention includes tertiary amines,
Examples include imidazoles, carboxylic acid metal salts, quaternary ammonium salts, quaternary phosphates, diaza-bicyclo-alkenes and their salts, which may be used alone or in combination.
Use by mixing more than one species. The amount of the curing accelerator is preferably 0.05 to 7.0% by weight based on the total amount of the epoxy resin or the epoxy resin and the carboxylic acid anhydride curing agent.
本発明に用いる第三級フォスファイト類化合物としては
、例えばトリス（ノニルフェニル）フォスファイト、ト
リイソオクチルフォスファイト、トリイソデシルフォス
ファイト、トリスステアリルフォスファイト、トリスフ
ェニルフォスファイト、トリオレイルフォスファイト、
トリメチルトリチオフォスファイト、トリエチルトリチ
オフォスファイト、トリｎ−プロビルトリチオフォスフ
ァイト、トリラウリルトリチオフォスファイト、トリシ
クロヘキシルトリチオフォスファイト、トリフェニルト
リチオフォスファイト等が挙げられ、これらは単独もし
くは２種以上混合して使用する。Examples of the tertiary phosphite compounds used in the present invention include tris(nonylphenyl)phosphite, triisooctylphosphite, triisodecylphosphite, trisstearylphosphite, trisphenylphosphite, trioleylphosphite,
Examples include trimethyl trithiophosphite, triethyl trithiophosphite, tri n-propyl trithiophosphite, trilauryl trithiophosphite, tricyclohexyl trithiophosphite, triphenyl trithiophosphite, and these may be used alone or in combination of two or more. and use it.
第三級フォスファイト類化合物の配合量は、エポキシ樹
脂、硬化剤、硬化促進剤、その他添加剤からなるエポキ
シ樹脂組成物に対して０．０５〜８．０重量％含有する
ことが望ましい。 ０．０５重量％未満では透明性（
着色防止）、輝度劣化防止の効果が十分でなく、また８
、０重層％を超えるとこれ以上配合しても輝度劣化防止
効果は上がらず、熱変形温度、耐水性、吸水性に劣り好
ましくない。The content of the tertiary phosphite compound is preferably 0.05 to 8.0% by weight based on the epoxy resin composition consisting of the epoxy resin, curing agent, curing accelerator, and other additives. If it is less than 0.05% by weight, transparency (
(coloration prevention), brightness deterioration prevention effect is insufficient, and
If the amount exceeds 0%, the effect of preventing brightness deterioration will not improve even if more than this is added, and the heat deformation temperature, water resistance, and water absorption will be poor, which is not preferable.
本発明に用いるエポキシ樹脂組成物は、上述したように
エポキシ樹脂、硬化剤、硬化促進剤、第三級フォスファ
イト類化合物を含むものであるが、更に必要に応じて光
散乱剤、着色剤その他充填剤、可塑剤、酸化防止剤等、
本発明の効果に悪影響を与えない限り添加配合すること
ができる。The epoxy resin composition used in the present invention contains an epoxy resin, a curing agent, a curing accelerator, and a tertiary phosphite compound as described above, and further contains a light scattering agent, a coloring agent, and other fillers as necessary. , plasticizers, antioxidants, etc.
They can be added as long as they do not adversely affect the effects of the present invention.
次に本発明の樹脂封止型半導体装置を図面を用いて説明
する。 第１図において（ａ）図はエポキシ樹脂組成物
を注型封止する場合の状態を示し、（ｂ）図は樹脂封止
後、型より取り出した状態を示したものである。 （
ａ）図に於いて、離型剤を塗布したＬＥＤ用プラプラス
チック型１述のエポキシ樹脂組成物２を注入し、発光素
子３をマウントしたフレーム４を固定用治具５を用いて
取り付け、１４０℃で１０時間加熱硬化させる。 加熱
硬化後固定用治具５を取りはずしくｂ）図に示したよう
に樹脂封止された樹脂封止型半導体装置６を製造するこ
とができた。Next, the resin-sealed semiconductor device of the present invention will be explained with reference to the drawings. In FIG. 1, (a) shows the state when the epoxy resin composition is cast and sealed, and (b) shows the state taken out from the mold after resin sealing. (
a) In the figure, the epoxy resin composition 2 described in 1 is injected into the LED plastic mold coated with a mold release agent, and the frame 4 on which the light emitting element 3 is mounted is attached using the fixing jig 5. Heat and cure at ℃ for 10 hours. After heating and curing, the fixing jig 5 was removed, and b) a resin-sealed semiconductor device 6 could be manufactured as shown in the figure.
本発明では半導体の樹脂封止について説明したが、その
他の電子部分の樹脂封止にも十分適用することができる
。In the present invention, resin sealing of semiconductors has been described, but the present invention can also be sufficiently applied to resin sealing of other electronic parts.
［発明の実施例］
次に本発明を実施例を用いて説明するが本発明はこれら
の実施例に限定されるものではない。[Examples of the Invention] Next, the present invention will be explained using Examples, but the present invention is not limited to these Examples.
実施例 １
エポン８２８（シェル化学社製エポキシ樹脂、商品名）
ｉｏｏｇ、無水へキサヒドロフタル酸１００ｇ、ｔＪ
−ＣＡＴ ５Ａ１０２（サンアボット社製１．８−ジ
アザビシクロ＜ ５．４．０＞ウンデセン７の２エチル
ヘキサン酸塩、商品名）２．０ｇ、トリスノニルフェニ
ルフォスファイト２３０ｇを撹拌混合均一にしてエポキ
シ樹脂組成物を得た。Example 1 Epon 828 (epoxy resin manufactured by Shell Chemical Co., Ltd., trade name)
ioog, hexahydrophthalic anhydride 100g, tJ
- 2.0 g of CAT 5A102 (2-ethylhexanoate of 1.8-diazabicyclo<5.4.0> undecene 7 manufactured by Sun Abbott, trade name) and 230 g of trisnonylphenyl phosphite were stirred and mixed uniformly to form an epoxy resin. A composition was obtained.
こうして得られたエポキシ樹脂組成物を離型剤を塗布し
たＬＥＤ用のプラスチック型に注入し、ガリウムーヒ素
−リン（Ｇａ Ａｓ Ｐ）黄色発光のチップをマウント
したフレームを固定用治具を用いて取り付け、１４０℃
で１０時間加熱硬化させた。The epoxy resin composition obtained in this way was injected into a plastic mold for LED coated with a mold release agent, and a frame with a gallium-arsenic-phosphorus (GaAs P) yellow-emitting chip mounted thereon was attached using a fixing jig. , 140℃
It was heated and cured for 10 hours.
その後固定用治具を取りはずし１個１個切り離し樹脂封
止型半導体装置を製造した。 これについて光通過性、
熱変形温度、ＬＥＤの輝度劣化性を試験した。 輝度劣
化性については、それぞれ（７） Ｌ Ｅ Ｄヲ２５
ｍＡ、 ２２Ｖの条件で室Ｉで長ｖ１間通電後、再びそ
れぞれＬＥＤの輝度の変化を調ぺた。Thereafter, the fixing jig was removed and the semiconductor devices were cut out one by one to produce resin-sealed semiconductor devices. Regarding this, light transmittance,
Heat distortion temperature and LED brightness deterioration were tested. Regarding brightness deterioration, see (7) L E D 25 respectively.
After applying electricity for a long time v1 in room I under the conditions of mA and 22V, changes in the brightness of each LED were examined again.
測定は、２０個のＬＥＤについて行い、輝度の残存率の
平均をその時間の輝度の残存率とし、１６８時間通電後
の輝度の残存率を調べたので第１表に示した。 比較例
に比べ輝度劣化が著しく低い本発明の効果が認められた
。The measurements were performed on 20 LEDs, and the average of the residual brightness rates was taken as the residual brightness rate for that time, and the residual brightness rates after 168 hours of energization were investigated and are shown in Table 1. The effect of the present invention was observed in that luminance deterioration was significantly lower than that of the comparative example.
実施例２〜７
第１表に示した組成で実施例１と同様な方法で樹脂封止
型半導体装置を製造し、また同様な評価を行ったのでそ
れぞれの結果を第１表に示した。Examples 2 to 7 Resin-sealed semiconductor devices were manufactured in the same manner as in Example 1 using the compositions shown in Table 1, and the same evaluations were conducted. Table 1 shows the results.
いずれも本発明の著しい効果が認められた。In all cases, the remarkable effects of the present invention were recognized.
比較例 １〜４
第１表に示した組成で実施例１と同様な方法で樹脂封止
型半導体装置を製造し、また同様な評価を行った。 そ
れぞれの結果を第１表に示した。Comparative Examples 1 to 4 Resin-sealed semiconductor devices were manufactured using the compositions shown in Table 1 in the same manner as in Example 1, and were evaluated in the same manner. The results are shown in Table 1.
［発明の効果］
以上の説明および第１表から明らかなように第三級フォ
スファイト類化合物を含むエポキシ樹脂組成物によって
、発・受光素子を封止したことによって透明性に優れ、
低応力で輝度劣化が少なく、耐熱性のよい樹脂封止型半
導体装置を提供することができる。[Effects of the Invention] As is clear from the above explanation and Table 1, the epoxy resin composition containing the tertiary phosphite compound seals the light-emitting and light-receiving elements, resulting in excellent transparency.
It is possible to provide a resin-sealed semiconductor device with low stress, little brightness deterioration, and good heat resistance.
第１図は、本発明の樹脂封止型半導体装置の構造を示す
断面図で、（ａ ）図は注型時の状態、（ｂ ）図は封
止後取り出した状態を示す。
１・・・プラスチック型、 ２・・・エポキシ樹脂組成
物、 ３・・・ＬＥＤチップ、 ４・・・フレーム、
５・・・固定用冶具、 ６・・・樹脂封止型半導体装置
。
第１図
（ａ） ＜ｂ）FIG. 1 is a cross-sectional view showing the structure of a resin-sealed semiconductor device of the present invention, in which (a) shows the state at the time of casting, and (b) shows the state taken out after sealing. DESCRIPTION OF SYMBOLS 1... Plastic mold, 2... Epoxy resin composition, 3... LED chip, 4... Frame,
5...Fixing jig, 6...Resin-sealed semiconductor device. Figure 1 (a) <b)
Claims (1)
ォスフアイト類化合物を含むエポキシ樹脂組成物で、発
・受光素子を封止してなることを特徴とする樹脂封止型
半導体装置。 ２ 第三級フォスフアイト類化合物を、エポキシ樹脂組
成物に対して０．０５〜８．０重量％含有する特許請求
の範囲第１項記載の樹脂封止型半導体装置。[Claims] 1. A resin encapsulation characterized in that a light-emitting/light-receiving element is encapsulated with an epoxy resin composition containing an epoxy resin, a curing agent, a curing accelerator, and a tertiary phosphite compound. type semiconductor device. 2. The resin-sealed semiconductor device according to claim 1, which contains a tertiary phosphite compound in an amount of 0.05 to 8.0% by weight based on the epoxy resin composition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60033689A JPS61194756A (en) | 1985-02-23 | 1985-02-23 | Resin seal type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60033689A JPS61194756A (en) | 1985-02-23 | 1985-02-23 | Resin seal type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61194756A true JPS61194756A (en) | 1986-08-29 |
Family
ID=12393392
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60033689A Pending JPS61194756A (en) | 1985-02-23 | 1985-02-23 | Resin seal type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61194756A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01161737A (en) * | 1987-12-17 | 1989-06-26 | Nitto Denko Corp | Optical semiconductor device |
| JP2001213940A (en) * | 2000-02-04 | 2001-08-07 | Nitto Denko Corp | Epoxy resin composition and semiconductor device |
| JP2006124563A (en) * | 2004-10-29 | 2006-05-18 | Sunstar Engineering Inc | Two-liquid sealer composition |
| JP2008291189A (en) * | 2007-05-28 | 2008-12-04 | Panasonic Electric Works Co Ltd | Liquid epoxy resin composition for sealing and sealed semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5867051A (en) * | 1981-10-16 | 1983-04-21 | Hitachi Chem Co Ltd | Epoxy resin composition for sealing semiconductor element |
| JPS59181038A (en) * | 1983-03-30 | 1984-10-15 | Nitto Electric Ind Co Ltd | Semiconductor device |
-
1985
- 1985-02-23 JP JP60033689A patent/JPS61194756A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5867051A (en) * | 1981-10-16 | 1983-04-21 | Hitachi Chem Co Ltd | Epoxy resin composition for sealing semiconductor element |
| JPS59181038A (en) * | 1983-03-30 | 1984-10-15 | Nitto Electric Ind Co Ltd | Semiconductor device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01161737A (en) * | 1987-12-17 | 1989-06-26 | Nitto Denko Corp | Optical semiconductor device |
| JP2001213940A (en) * | 2000-02-04 | 2001-08-07 | Nitto Denko Corp | Epoxy resin composition and semiconductor device |
| JP2006124563A (en) * | 2004-10-29 | 2006-05-18 | Sunstar Engineering Inc | Two-liquid sealer composition |
| JP4607544B2 (en) * | 2004-10-29 | 2011-01-05 | サンスター技研株式会社 | Two-part sealer composition |
| JP2008291189A (en) * | 2007-05-28 | 2008-12-04 | Panasonic Electric Works Co Ltd | Liquid epoxy resin composition for sealing and sealed semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100242353B1 (en) | Epoxy resin composition for sealing optical semiconductor element, and optical semiconductor device sealed by using this composition | |
| JPS60124617A (en) | Resin-sealed emitter | |
| JP5105974B2 (en) | Epoxy resin composition for optical semiconductor element sealing and optical semiconductor device using the same | |
| JPS61194756A (en) | Resin seal type semiconductor device | |
| JPH07288330A (en) | Photosemiconductor device | |
| JP3618133B2 (en) | Optical semiconductor device | |
| JPS6218565B2 (en) | ||
| JPH08311168A (en) | Epoxy resin composition for sealing optical semiconductor element and optical semiconductor device using same | |
| JPH05226700A (en) | Epoxy resin composition for sealing light emitting diode and light emitting diode sealed with same | |
| JPH11269351A (en) | Epoxy resin composition for sealing optical semiconductor element and optical semiconductor device using the same | |
| JPS59141250A (en) | Resin seal type semiconductor device | |
| JPH06192396A (en) | One pack type epoxy resin composition | |
| JPH0315821B2 (en) | ||
| JP2000136290A (en) | Resin composition for sealing and semiconductor-sealed device | |
| JPS6070781A (en) | Resin seal type light-emitting device | |
| JPH04209624A (en) | Epoxy resin composition for photosemiconductor sealing | |
| JPH08204067A (en) | Semiconductor device | |
| JPH03201470A (en) | Optical semiconductor device | |
| JP2001226450A (en) | Epoxy resin composition for sealing photosemiconductor and photosemiconductor device | |
| JPH05206523A (en) | Epoxy resin composition for sealing photo-semiconductor | |
| JPH0827253A (en) | Photosemiconductor apparatus | |
| JPS62128161A (en) | Optical semiconductor device | |
| JPH10158474A (en) | Epoxy resin composition for semiconductor sealing and optical photoconductor device sealed therewith | |
| JP2000136291A (en) | Resin composition for sealing and semiconductor-sealed device | |
| JPH04337317A (en) | Liquid epoxy resin composition |