JPS61171031U - - Google Patents
Info
- Publication number
- JPS61171031U JPS61171031U JP5313185U JP5313185U JPS61171031U JP S61171031 U JPS61171031 U JP S61171031U JP 5313185 U JP5313185 U JP 5313185U JP 5313185 U JP5313185 U JP 5313185U JP S61171031 U JPS61171031 U JP S61171031U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- formation region
- element formation
- transparent substrate
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 238000002834 transmittance Methods 0.000 claims 1
Landscapes
- Liquid Crystal (AREA)
Description
第１図は本考考案半導体素子形成用透明基板の
一実施例を示す断面図、第２図は第１図の平面図
である。 １は透明基板、１ａは半導体素子形成部、２ａ
及び２ｂは夫々薄膜層である。
一実施例を示す断面図、第２図は第１図の平面図
である。 １は透明基板、１ａは半導体素子形成部、２ａ
及び２ｂは夫々薄膜層である。
Claims (1)
- 一主面に半導体素子形成領域を有し、該半導体
素子形成領域以外の部分に光透過率が低く且つ導
電性を有する薄膜層を有することを特徴とする半
導体素子形成用透明基板。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5313185U JPS61171031U (ja) | 1985-04-10 | 1985-04-10 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5313185U JPS61171031U (ja) | 1985-04-10 | 1985-04-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61171031U true JPS61171031U (ja) | 1986-10-23 |
Family
ID=30573704
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5313185U Pending JPS61171031U (ja) | 1985-04-10 | 1985-04-10 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61171031U (ja) |
-
1985
- 1985-04-10 JP JP5313185U patent/JPS61171031U/ja active Pending