JPS61166050A - Marking method for ic package - Google Patents
Marking method for ic packageInfo
- Publication number
- JPS61166050A JPS61166050A JP59258595A JP25859584A JPS61166050A JP S61166050 A JPS61166050 A JP S61166050A JP 59258595 A JP59258595 A JP 59258595A JP 25859584 A JP25859584 A JP 25859584A JP S61166050 A JPS61166050 A JP S61166050A
- Authority
- JP
- Japan
- Prior art keywords
- cap
- nickel layer
- marking
- nickel
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
- H01L2223/54486—Located on package parts, e.g. encapsulation, leads, package substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、ＩＣパッケージの捺印方法に係る。[Detailed description of the invention] [Industrial application field] The present invention relates to a method of marking an IC package.
ＩＣパッケージの捺印方法として、レーザを照射するこ
とで捺印を行なうことが提案されている。As a method of marking an IC package, it has been proposed to perform the marking by irradiating a laser.
一般にレーザ光線をＩＣパッケージのキャップ表面等に
照射し所定のマークを描画するのであるが、ＩＣパッケ
ージのキャップ表面のみを熔かすようなやり方ではキャ
ップ表面の例えばニソケルメッセ層のみ熱変形し、表面
の凹凸によりマークや番号が表示されるだけで、全体と
は色の違い等もなく見えに（いという欠点があった。Generally, a laser beam is irradiated onto the cap surface of an IC package to draw a predetermined mark, but if only the cap surface of the IC package is melted, only the Nisokelmesse layer on the cap surface will be thermally deformed, resulting in surface irregularities. The disadvantage was that only the marks and numbers were displayed, and there was no difference in color from the overall image.
本発明は見えやすいレーザ捺印を行なうことを目的とし
、鉄、ニッケル系の合金よりなるキャップ本体の表面に
、所定の膜厚のニッケル層をメッキし、該キャップをパ
ッケージに封止し、該キャンプに熱線を照射して該ニッ
ケル層とキャップ本体とを合金化して該ニッケル層とは
異なる色にし捺印を行なう工程を含むことを特徴とする
ＩＣパッケージの捺印方法により達成される。The purpose of the present invention is to perform laser marking that is easy to see.The surface of a cap body made of an iron and nickel alloy is plated with a nickel layer of a predetermined thickness, the cap is sealed in a package, and the This is achieved by a method for marking an IC package, which includes the step of irradiating the nickel layer with a hot ray to alloy the nickel layer and the cap body so that the nickel layer has a color different from that of the nickel layer.
一般にキャップは鉄、ニッケル系の合金にて形成され、
表面が二・７ケルにてメッキされている。Generally, the cap is made of iron and nickel alloy.
The surface is plated with 2.7 Kel.
そこで本発明ではレーザ光線をある程度強いパワーにし
、表面のニッケル層に加え本体の合金まで一緒に溶かし
てニッケルとコバールの合金層としている。その結果そ
の合金は黒くなり、まわりのニッケル層のシルバー色と
明瞭に区別され、しかもそのような合金ではコバールは
錆びないことが確認されていて好都合である。Therefore, in the present invention, the power of the laser beam is increased to a certain extent, and in addition to the nickel layer on the surface, the alloy of the main body is melted to form an alloy layer of nickel and Kovar. As a result, the alloy becomes black, clearly distinguishable from the silver color of the surrounding nickel layer, and advantageously, Kovar has been shown not to rust in such alloys.
第１図、第２図に本発明の一実施例を示す要部断面図を
示す。FIGS. 1 and 2 are sectional views of essential parts showing an embodiment of the present invention.
１はセラミックよりなるパッケージ本体で、チップ３を
収容し金属キャップ７によりハンダ５を介して封止され
ている。本実施例ではキャップ７は本体９が鉄、ニッケ
ル、コバルト合金（コバール：商品名）よりなり、その
表面には錆び止め用にニッケルＮ１１がメッキされてい
る。Reference numeral 1 denotes a package body made of ceramic, which houses a chip 3 and is sealed with a metal cap 7 via solder 5. In this embodiment, the main body 9 of the cap 7 is made of iron, nickel, and cobalt alloy (Kovar: trade name), and its surface is plated with nickel N11 for rust prevention.
このニッケル層１１はレーザ光線１５が照射されその部
分がコバール９の一部と合金化されるよう１〜３μｍの
厚さに抑えられている。This nickel layer 11 is kept to a thickness of 1 to 3 μm so that the laser beam 15 is irradiated and the nickel layer 11 is alloyed with a portion of the Kovar 9.
そしてレーザ光線１５としてはＹＡＧレーザを使用しそ
のパワーは５０Ｗで、所定のマークに従って図示しない
レーザ装置により描画される。その結果ニッケル層１１
とコバールよりなる本体９の一部とが合金化され（１３
）、その合金部工３は黒色となる。ニッケルＦｉｌｌは
シルバー色数、合金部１３による捺印は明瞭になる。A YAG laser is used as the laser beam 15 with a power of 50 W, and drawing is performed by a laser device (not shown) according to a predetermined mark. As a result, the nickel layer 11
and a part of the main body 9 made of Kovar are alloyed (13
), the alloy part 3 becomes black. The nickel fill has a silver color and the marking by the alloy part 13 is clear.
ニッケル層１１の厚み１６が厚すぎると、図中１４に示
すようにニッケル層１１の表面のみが溶け、そこに凹凸
がつくだけで、色は周囲と同じ故捺印が光って見ずらく
なる。厚いニッケル層１１に対しレーザのパワーを大き
くして無理にキャップ本体９まで熔かそうとすると捺印
の周辺まで黒く変化し微細な捺印ができなくなる。If the thickness 16 of the nickel layer 11 is too thick, only the surface of the nickel layer 11 will melt as shown at 14 in the figure, and only the surface will become uneven, and since the color is the same as the surrounding area, the stamp will shine and be difficult to see. If the laser power is increased to forcibly melt the thick nickel layer 11 down to the cap body 9, the periphery of the marking will turn black, making it impossible to make a fine marking.
ニッケル層１１と鉄、コバルト、ニッケル合金のコバー
ル層９との合金１３によればコバール層の錆び防止にも
なることを確認している。It has been confirmed that the alloy 13 of the nickel layer 11 and the Kovar layer 9 made of iron, cobalt, and nickel alloy prevents the Kovar layer from rusting.
本発明によればレーザ光線により明瞭な捺印を行なうこ
とができる。According to the present invention, a clear seal can be made using a laser beam.
第１，２図は本発明の一実施例を示す要部断面図である
。
図中、７はキャップ、９は鉄、コバルト、ニッケル合金
の本体、１１はニッケル層、１３は合金層である。
芥 １ｆｌ１
竿２国1 and 2 are sectional views of essential parts showing one embodiment of the present invention. In the figure, 7 is a cap, 9 is a main body made of iron, cobalt, and nickel alloy, 11 is a nickel layer, and 13 is an alloy layer. Mustard 1fl1 Rod 2 countries
Claims (1)
所定の膜厚のニッケル層をメッキし、該キャップをパッ
ケージに封止し、該キャップに熱線を照射して該ニッケ
ル層とキャップ本体とを合金化して該ニッケル層とは異
なる色にし捺印を行なう工程を含むことを特徴とするＩ
Ｃパッケージの捺印方法。On the surface of the cap body made of iron and nickel alloy,
A nickel layer of a predetermined thickness is plated, the cap is sealed in a package, the cap is irradiated with heat rays to alloy the nickel layer and the cap body, and the color is different from that of the nickel layer and a stamp is applied. I characterized by including a process
How to stamp a C package.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59258595A JPS61166050A (en) | 1984-12-07 | 1984-12-07 | Marking method for ic package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59258595A JPS61166050A (en) | 1984-12-07 | 1984-12-07 | Marking method for ic package |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61166050A true JPS61166050A (en) | 1986-07-26 |
| JPH033949B2 JPH033949B2 (en) | 1991-01-21 |
Family
ID=17322445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59258595A Granted JPS61166050A (en) | 1984-12-07 | 1984-12-07 | Marking method for ic package |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61166050A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6049055A (en) * | 1996-02-23 | 2000-04-11 | Orga Kartensysteme Gmbh | Method of producing a smart card |
| US6495914B1 (en) * | 1997-08-19 | 2002-12-17 | Hitachi, Ltd. | Multi-chip module structure having conductive blocks to provide electrical connection between conductors on first and second sides of a conductive base substrate |
| US6829816B2 (en) * | 2001-01-25 | 2004-12-14 | Murata Manufacturing Co., Ltd. | Method of manufacturing nonreciprocal circuit device |
| CN105172403A (en) * | 2015-09-29 | 2015-12-23 | 深圳英诺激光科技有限公司 | Colorful marking method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5498183A (en) * | 1978-01-19 | 1979-08-02 | Nec Corp | Semiconductor device graphic display method |
| JPS57130452A (en) * | 1981-02-06 | 1982-08-12 | Fujitsu Ltd | Entry of mark of semiconductor device |
-
1984
- 1984-12-07 JP JP59258595A patent/JPS61166050A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5498183A (en) * | 1978-01-19 | 1979-08-02 | Nec Corp | Semiconductor device graphic display method |
| JPS57130452A (en) * | 1981-02-06 | 1982-08-12 | Fujitsu Ltd | Entry of mark of semiconductor device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6049055A (en) * | 1996-02-23 | 2000-04-11 | Orga Kartensysteme Gmbh | Method of producing a smart card |
| US6495914B1 (en) * | 1997-08-19 | 2002-12-17 | Hitachi, Ltd. | Multi-chip module structure having conductive blocks to provide electrical connection between conductors on first and second sides of a conductive base substrate |
| US6829816B2 (en) * | 2001-01-25 | 2004-12-14 | Murata Manufacturing Co., Ltd. | Method of manufacturing nonreciprocal circuit device |
| CN105172403A (en) * | 2015-09-29 | 2015-12-23 | 深圳英诺激光科技有限公司 | Colorful marking method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH033949B2 (en) | 1991-01-21 |
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