JPS61150862U - - Google Patents
Info
- Publication number
- JPS61150862U JPS61150862U JP3247485U JP3247485U JPS61150862U JP S61150862 U JPS61150862 U JP S61150862U JP 3247485 U JP3247485 U JP 3247485U JP 3247485 U JP3247485 U JP 3247485U JP S61150862 U JPS61150862 U JP S61150862U
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- provided around
- heater
- resistance heating
- pulling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 1
- 239000000155 melt Substances 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
第１図は本考案の実施例を示す模式的断面図、
第２図は本考案の他の実施例を示す模式的断面図
、第３図、第４図は従来装置の説明図である。
２…抵抗加熱式ヒータ、３…るつぼ、４…溶融
液、５…単結晶、３１′，３２′，３３′，３４
′，３５′…るつぼ素体。
FIG. 1 is a schematic cross-sectional view showing an embodiment of the present invention;
FIG. 2 is a schematic sectional view showing another embodiment of the present invention, and FIGS. 3 and 4 are explanatory views of a conventional device. 2... Resistance heating type heater, 3... Crucible, 4... Melt, 5... Single crystal, 31', 32', 33', 34
', 35'... Crucible element.
Claims (1)
へ向けて溶融しつつその溶融液を上方に引上げて
結晶を成長させる装置において、 一体型の内層るつぼの外側に、環状のるつぼ素
体を上下に積層してなる外層るつぼを一体的に取
付けたるつぼと、 該るつぼの周囲に設けた抵抗加熱式ヒータと、 該ヒータの周囲に設けた熱遮蔽体と を具備することを特徴とする結晶成長装置。[Scope of Claim for Utility Model Registration] In an apparatus for growing crystals by melting a crystal material inserted into a crucible from the top to the bottom and pulling the melt upward, , a crucible having an integrally attached outer layer crucible formed by stacking annular crucible elements vertically, a resistance heating type heater provided around the crucible, and a heat shield provided around the heater. A crystal growth apparatus characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985032474U JPH037405Y2 (en) | 1985-03-06 | 1985-03-06 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985032474U JPH037405Y2 (en) | 1985-03-06 | 1985-03-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61150862U true JPS61150862U (en) | 1986-09-18 |
| JPH037405Y2 JPH037405Y2 (en) | 1991-02-25 |
Family
ID=30534020
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1985032474U Expired JPH037405Y2 (en) | 1985-03-06 | 1985-03-06 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH037405Y2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03120569U (en) * | 1990-03-15 | 1991-12-11 | ||
| JPH0656571A (en) * | 1992-04-16 | 1994-03-01 | Sumitomo Metal Ind Ltd | Method for controlling single crystal oxygen concentration when pulling single crystal and crystal growth apparatus used in the method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4840666U (en) * | 1971-09-16 | 1973-05-23 | ||
| JPS5345679A (en) * | 1976-10-08 | 1978-04-24 | Hitachi Ltd | Pulling-up apparatus for sillicon single crystal |
| JPS55126597A (en) * | 1979-03-23 | 1980-09-30 | Nec Corp | Single crystal growing method |
-
1985
- 1985-03-06 JP JP1985032474U patent/JPH037405Y2/ja not_active Expired
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4840666U (en) * | 1971-09-16 | 1973-05-23 | ||
| JPS5345679A (en) * | 1976-10-08 | 1978-04-24 | Hitachi Ltd | Pulling-up apparatus for sillicon single crystal |
| JPS55126597A (en) * | 1979-03-23 | 1980-09-30 | Nec Corp | Single crystal growing method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03120569U (en) * | 1990-03-15 | 1991-12-11 | ||
| JPH0656571A (en) * | 1992-04-16 | 1994-03-01 | Sumitomo Metal Ind Ltd | Method for controlling single crystal oxygen concentration when pulling single crystal and crystal growth apparatus used in the method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH037405Y2 (en) | 1991-02-25 |