JPS6085525A - Mask repairing method - Google Patents

Abstract

PURPOSE:To enable complete repair by few processes by placing a mask and a reticle on a sample stage, applying an organic film consisting of a photo-resist, etc., irradiating a fine region to be repaired with focussed charged particle beams while being scanned, changing the region into a carbon film and bringing the region to an opaque state when the mask or the reticle, in which a broken defect is generated, is repaired. CONSTITUTION:A metallic film 2 on which a mask pattern is to be formed is applied on a glass substrate 1, and a semiconductor wafer is exposed by using the metallic film 2. When a broken defect 3 is generated in the film 2 at that time, regions other than required are irradiated by beams, and the performance of an IC is deteriorated. Consequently, an organic film 4 consisting of a photo- resist, etc. is applied on the whole surface containing the defect 3, and placed on a stage not shown, the film 4 depositing on a defective section 3a is irradiated by charged particle beams 5 and the function of the film 4 is lost, and the film 4 depositing on the defective section 3a is brought to an opaque state to interrupt the transmission of ultraviolet rays and visible rays. Accordingly, time and trouble are conserved, and the metallic film 2 is completely repaired simply.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention uses a beam-shaped charged particle beam that is extremely narrowly focused to inject these charges onto defective areas of an organic film such as photoresist coated on a mask or reticle having defects to be repaired. The present invention relates to a method for repairing defects in manuk trenches or reticles in which an organic film is carbonized and rendered opaque by selective irradiation with a particle beam.

Masks and reticles used in semiconductor manufacturing processes contain many defects. There are two types of defects; one is where the part that should have been removed remains, and the other is where the part that should remain was removed.

Conventional laser repair equipment only has the function of irradiating laser light onto the remaining part and vaporizing it, so while it can repair the former defect, it is powerless against the latter defect.Also, To repair the latter defect, a lift-off process is used), but this method requires repeating the entire mask manufacturing process, which is time-consuming.

The present invention eliminates the latter defect, that is, the part that should remain is removed.
The purpose of this invention is to provide a means for effectively repairing a defect (missing defect) that has occurred in a short period of time.

A mass free bearing method according to the present invention will be described in detail below with reference to one drawing.

FIGS. 1(b) and 1(b) show a cross-sectional view and a plan view of a mask or reticle having a defect to be repaired.

1 is a glass substrate, 2 is a metal film forming a mask pattern, and 3 is a defect in which the metal film is missing. In Figure 1,
Originally, a metal film pattern should also be formed on the area 3, but if a missing defect like 3 occurs in the mask manufacturing process, it is necessary to form a metal film pattern outside the required area when exposing the semiconductor wafer. The light is also irradiated on the semiconductor integrated circuits, causing a total deterioration in the performance of the semiconductor integrated circuits, etc. being manufactured, leading to a decrease in yield.

FIGS. 2 and 3 schematically show defect repair according to the present invention.

First, an organic film 4 such as photoresist is applied to the entire surface of a mask or reticle having missing defects. Then, a rounding stage (not shown) for moving the mask or reticle and a charged particle beam optical system (not shown) for focusing, scanning, and deflecting the charged particle beam are fully operated to fully cover the missing defect area 3LOL. A focused charged particle beam 5 is irradiated. In recent years, semiconductor integrated circuits have become ultra-fine and the defect patterns to be repaired have also become finer, and it is essential that the charged particle beam used here is also focused to 1 μm or less.

In this way, the organic film 3α irradiated with the charged particle beam loses its original properties, and when the phenomenon is treated by a commonly used method, the charged particle beam irradiated area becomes A film remains. Further, the organic film 3α irradiated with the charged particle beam becomes opaque due to the decomposition and carbonization of the organic film constituent molecules, and the lowering of the transmittance of light in the ultraviolet and visible regions used for exposure. That is, the third
In the regions 2 and 3G shown in the figure, the optically opaque parts are connected, and the mask pattern is repaired.

As described above, the mask repair method according to the present invention allows complete repair to be performed with a small number of steps, thereby saving a lot of time and effort.

[Brief explanation of the drawing]

FIG. 1(A) is a cross-sectional view of a mask or reticle for removing missing defects, and (to) is a plan view thereof. FIG. 2 shows the process of repairing defects. Third
Figure (A) is a cross-sectional view of the mask or reticle after repair, and ω) is its plan view. 1 is a glass substrate, 2 is a metal film forming a mask pattern, 3 is a missing defect, 3α is a repaired missing defect, 4 is an organic coating coated on a mask or reticle, and 5 is a focused charged particle beam. Applicants: Seiko Electronic Industries Co., Ltd., Attorney-at-Law -1@-H

Claims (1)

[Claims] A process of applying an organic wave such as photoresist onto a mask or reticle that is placed on a sample stage and has a defect to be repaired, and a focused charged particle beam is scanned and irradiated onto the minute area of this mask or reticle to be repaired. In addition to this step, the focused charged particle beam is used to turn a required portion of the organic film into a carbon film, making it opaque.