JPS6060711A - Manufacture of semiconductor film - Google Patents

Abstract

PURPOSE:To obtain the semiconductor film having excellent electric characteristic by a method wherein an electromagnetic coil, with which a magnetic field will be formed, is wound around the substrate whereon a semiconductor film obtained by the plasma decomposition of reaction gas will be formed. CONSTITUTION:An electromagnetic coil 8, the winding direction of which is in parallel with the surface of a substrate 6, is provided in such a manner that it surrounds the substrate 6, a high frequency electrode 3 and an earthing electrode 4. When a DC current is applied to the coil 8, a magnetic field 9 is formed as shown by the broken lines in the diagram. When reaction gas is introduced into a reaction chamber 1 through the intermediary of an introducing hole 7 and plasma is excited by performing a high frequency glow discharge between electrodes 3 and 4, high speed charge particles perform a helical cyclotron movement along the magnetic field. The movement direction of the charged particles does not cross at right angle with the surface of the substrate 6 which is being formed by plasma decomposition, the number of collision with the surface of the substrate 6 is reduced remarkably, and the damage on the semiconductor film is also reduced.

Description

DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a method for manufacturing a semiconductor film in which the entire semiconductor film is formed on the surface of a substrate by plasma decomposition of a reactive gas.

(b) Prior art A plasma is excited by glow lightning in an atmosphere of a reactive gas such as silane, and the amorphous 41 film obtained by decomposing the reaction residue is deposited on the substrate surface (the method of forming F is As disclosed in Japanese Publication No. 56-67718, etc., there have already been other methods.

4. Figure 1 is a conceptual diagram for explaining the previously unknown method of manufacturing an amorphous semi-film, in which (1) shows the exhaust port (
2) reaction chamber maintained in low nitrogen via (3) +4
．． 1 is a high-frequency electrodeposition and ground electrode connected to high-frequency power sources (5) arranged in parallel with each other in the reaction chamber +11, and (6) is arranged on the ground electrode +41'' side of both electrodes +31 and +4+. Substrates such as stainless steel or glass with transparent # or lightning film deposited on the surface in advance, +
Reference numeral 71 denotes an inlet for introducing a reaction gas into the reaction chamber (1).

In such a configuration, the above-mentioned inlet (7) is provided in the reaction chamber (1).
A reactive gas such as monosilane (Sin) is introduced from the substrate, and a heating means (not shown) is used to heat the substrate (
6) is maintained at a temperature of several hundred degrees Celsius, and a high-frequency power supply (5) excites plasma by high-frequency glow lightning between the p and p electric currents f31 +41. When plasma is excited by high-frequency glow lightning, the high-speed charged particles generated in the plasma collide with the reactant gas. The reactive gas is decomposed, and the active species obtained by the decomposition contribute to the formation of an amorphous semiconductor film on the substrate]6).

However, according to this conventional method, the substrate (6) is located between the high-frequency electrode (3) and the earth electrode (4), and the surface of the substrate (6) is almost perpendicular to the moving direction of the charged particles. , high-speed charged particles in the plasma collide with the surface of the substrate (6), damaging the substrate (6), the transparent conductive film, or the amorphous semiconductor film that is being formed, and the eKi% of the amorphous semiconductor film decreases. There was a risk that the characteristics of the patient would worsen.

On the other hand, in recent years, among the above-mentioned amorphous conductors, amorphous silicon-based semiconductors obtained by using silicon compounds such as silane as a reaction gas have been used as photovoltaic devices that directly convert original energy into electrical energy, so-called half-circuits of solar cells. It is now in the spotlight as a pollutant. When using this photovoltaic device as a household power source, it is optimal to form such a photovoltaic device directly on a roof tile, considering the installation location.

However, the general shape of ζ1 roof tiles has a wavy surface, and it is difficult to uniformly form an amorphous silicon semiconductor film on such a curved surface by the conventional method shown in FIG. 6) is difficult because the facing distance from the high-frequency electrode (3) on the surface becomes uneven and the plasma state is disturbed.

(c) Purpose of the Invention The first object of the present invention is to provide a method for manufacturing a semiconductor film which has superior lightning characteristics than the plasma component MK of the reaction gas, and the second purpose is to provide a method for manufacturing a semiconductor film having superior lightning characteristics than the plasma component MK of the reaction gas. (0) Forming a semiconductor film on the surface of a substrate The method for producing a semiconductor film of the present invention, which forms a semiconductor film obtained by plasma decomposition of a constituent reaction gas on the surface of a substrate, involves applying a magnetic field around the substrate. The electromagnetic coil to be formed is wound in a configuration in which the winding direction of the electromagnetic coil is parallel to the surface of the substrate. Components that are the same as those in the figure are given the same numbers and explanations are omitted. That is, the features of the present invention include the substrate (6), the high frequency electrode (3), and the earth πτ.
In order to surround the pole (4), an electromagnetic coil (8) is provided, the winding direction of which is parallel to the surface of the substrate (6).

[7] When direct current is applied to the electromagnetic coil (8),
The coil (8) forms a magnetic field (9) as shown by the broken line in the figure by the circulating current. In this state, when a reaction gas is introduced into the reaction chamber (1) through the entire inlet (7) and a plasma is excited by high-frequency glow discharge between the high-frequency electrode (3) and the earth electrode (4), The direction of movement of the highly charged particles in the plasma is regulated by the magnetic field, and as shown in FIG. 6, the highly charged particles in the plasma are transported in a spiral cycloton along the magnetic field (9).

In this way, when the cycloton moves along the 1111 field formed by the flattened charged particle force 5 electromagnetic coil (8),
The moving direction of the charged particles is not perpendicular to the surface of the substrate (6) that is being formed by the plasma decomposition, so the number of collisions with the surface of the substrate (6) is greatly reduced, and the semiconductor film damage to is reduced.

FIG. 4 is a conceptual diagram of an uninvented second practical example, in which the substrate (
6) is applied when the surface is not a flat plate but has a curved surface such as a roof tile. This embodiment differs from the first embodiment in the high frequency electrode (3) and the earth electrode (3).
4) exhibits the same curved shape corresponding to the curved surface of the substrate 16), and the winding direction of the electromagnetic coil (8) meanders along the curved surface. That is, in such a configuration, when a high frequency glow discharge is generated between the high frequency electrode (3) and the earth electrode (4) and plasma is excited,
The high-speed charged particles are regulated by the i-field by the electromagnetic coil (8), and undergo cycloton motion in the winding direction of the coil (8) due to the meandering force 3 as shown in the fifth factor. Therefore, since the moving direction of the high-speed charged particles follows the curved surface of the substrate (6), the state of the plasma excited between the high-frequency electrode (3) and the earth electrode (4) does not become uneven, and the high-speed charged particles The distribution of active species formed when the particles collide with the reactive gas also becomes uniform over the curved surface of the substrate (6).

For example, 13.56MHz, 10~10 QWatt
When forming an amorphous silicon semiconductor film in a silane gas W at a gas pressure of 0.1 to i Torr with a high frequency output of ~20 OQ Gu days are designed to form a magnet 5 (9).

(f) Effects of the Invention As is clear from the above explanation, the electromagnetic coil that forms the entire magnetic field is wound around the substrate on which the semiconductor film obtained by plasma decomposition of the reactant gas is formed. The direction of movement of the high-speed charged particles moving is regulated by the above magnetic field, and the number of collisions with the semiconductor film forming surface of the substrate is greatly reduced, reducing damage to the semiconductor film being formed. It is possible to manufacture semiconductor films with excellent physical properties. Furthermore, by arranging the winding direction of the electromagnetic coil that forms the magnetic field parallel to the substrate surface, the excited state of the plasma as seen from the substrate surface can be made uniform, and a highly uniform semiconductor film can be formed. can. Moreover, even when such a highly uniform semiconductor film is applied to a substrate having a curved surface, such as a roof tile, the winding direction of the coil is parallel to the curved surface of the substrate, that is, in a meandering manner. It can be easily formed by applying heat, and is versatile.

[Brief explanation of the drawing]

Figure 1 is a conceptual diagram for explaining the conventional method, and Figure 2 is a conceptual diagram for explaining the first practical example of the great invention method.
Figure 4 is a conceptual diagram for explaining the motion of high-speed heavy particles in the second embodiment of the invention, Figure 4 is a conceptual diagram for explaining the second embodiment of the great invention method, and Figure 5 is a conceptual diagram for explaining the second embodiment of the great invention method. Conceptual diagrams for explaining the movement of high-speed charged particles in the example of Fig. 4 are shown. (1) Reaction chamber, j31... High frequency electrode, (4)
... Earth electrode, (6) ... Substrate, (8) ... Electromagnetic coil, (9) ... Magnetic field. Figure 1 Figure 2 Figure 3 Figure 5

Claims (3)

[Claims] (1) A method for manufacturing a semiconductor film, which comprises forming a semiconductor film obtained by plasma decomposition of the reaction gas on the surface of a substrate provided in a reaction gas atmosphere, the method comprising an electromagnetic coil that forms a magnetic field around the substrate. A method for manufacturing a semiconductor film, characterized in that it is wound. (2) The method for manufacturing a semiconductor film according to claim 1, wherein the winding direction of the electromagnetic coil is parallel to the substrate surface. (3) The semiconductor device according to claim 2, wherein the surface of the substrate has a curved shape, and the winding direction of the first electromagnetic coil is meandering along the curved surface. Production method.