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JPS6057694A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS6057694A
JPS6057694A JP58165534A JP16553483A JPS6057694A JP S6057694 A JPS6057694 A JP S6057694A JP 58165534 A JP58165534 A JP 58165534A JP 16553483 A JP16553483 A JP 16553483A JP S6057694 A JPS6057694 A JP S6057694A
Authority
JP
Japan
Prior art keywords
light
semiconductor laser
laser
window
outgoing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58165534A
Other languages
Japanese (ja)
Inventor
Kaoru Takahashi
薫 高橋
Satoshi Ishizuka
石塚 訓
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58165534A priority Critical patent/JPS6057694A/en
Publication of JPS6057694A publication Critical patent/JPS6057694A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4204Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4207Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms with optical elements reducing the sensitivity to optical feedback
    • G02B6/4208Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms with optical elements reducing the sensitivity to optical feedback using non-reciprocal elements or birefringent plates, i.e. quasi-isolators
    • G02B6/4209Optical features
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4204Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4207Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms with optical elements reducing the sensitivity to optical feedback
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/02208Mountings; Housings characterised by the shape of the housings
    • H01S5/02212Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0225Out-coupling of light
    • H01S5/02257Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To prevent the resonator, etc., of the titled laser from being deteriorated and to stabilize operation of the laser by a method wherein, when outgoing light emitted from a laser element is made to reflect by a window on the face of a cap to be used for sealing the outgoing light airtightly, the face of the cap is inclinedly constituted to an extent that the reflected light at the end face of the window doesn't return to the laser element. CONSTITUTION:A semiconductor element 1 is mounted on the laser submount 10 of a semiconductor laser and outgoing light 6 emitted from the laser element 1 is reflected by the light-outgoing window 2 of a cap to be used for sealing the outgoing light airtightly. The light-outgoing window 2 is inclinedly constituted to an extent that the reflected light 7 reflected by the light-outgoing window 2 of the cap 3 doesn't return to the active layer of the lase element 1. According to this constitution, the reflected light at both ends of the light-outgoing window 2 is prevented from intruding into the active layer of the laser element 1 and stabilization of the semiconductor laser is contrived. When a magnetooptic crystal 12 is used for an isolator for light source for optical communication, wherein this semiconductor laser has been used, deterioration of the resonator, etc., is prevented and operation of the laser is stabilized.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、光通信、光情報処理、及び光センサ等の光源
として用いる半導体レーザ装置に関する。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a semiconductor laser device used as a light source for optical communications, optical information processing, optical sensors, and the like.

従来例の構成とその問題点 半導体レーザをデバイス化する場合、第1図に示す様に
、半導体レーザ素子1の共振器面等の劣に半導体レーザ
素子1の共振器面と平行にサファイヤガラス等からなる
窓2を配;置する様な構成のキャップ3により気密封止
を行ない、電極4.5をハーメチックシールにより取り
出す構成が用いられている。
Conventional Structure and Problems When converting a semiconductor laser into a device, as shown in FIG. 1, a layer of sapphire glass, etc. A structure is used in which hermetic sealing is performed by a cap 3 having a structure in which a window 2 is disposed, and an electrode 4.5 is taken out by a hermetic seal.

第2図に半導体レーザ累)部の溝端を示す。半導体レー
ザの片側の共振器端面8から出射した光6が、第1図に
示した半導体レーザ素子1の気密封止キャップ3の光出
射面内の、半導体レーザ素子1の共振器端面8と平行に
構成された光出射用窓2の両端面で一部反射され、半導
体レーザ素子1の活性層9に戻る。10はレーザのサブ
マウントである。半導体レーザはその活性層に出射光の
反射光が戻ると、それによって半導体レーザの発振特性
の不安定化や雑音増加を引き起こすことが指摘されてい
る。すなわち、半導体レーザを光通信や光情報処理の光
源として用いるためには、できるだけ戻り光を取りのぞ
かなければならない。
FIG. 2 shows the groove ends of the semiconductor laser stack. The light 6 emitted from the resonator end face 8 on one side of the semiconductor laser is parallel to the resonator end face 8 of the semiconductor laser element 1 within the light exit plane of the hermetic sealing cap 3 of the semiconductor laser element 1 shown in FIG. A portion of the light is reflected by both end faces of the light emitting window 2, which is configured as follows, and returns to the active layer 9 of the semiconductor laser device 1. 10 is a laser submount. It has been pointed out that when reflected light from emitted light returns to the active layer of a semiconductor laser, this causes instability of the oscillation characteristics of the semiconductor laser and an increase in noise. That is, in order to use a semiconductor laser as a light source for optical communication or optical information processing, it is necessary to remove as much return light as possible.

発明の目的 土用キャップの窓での反射光が上記半導体レーザの活性
層に戻ることを防ぎ、安定な光源を得ることを目的とす
る。
OBJECTS OF THE INVENTION It is an object of the invention to prevent light reflected from the window of the soil cap from returning to the active layer of the semiconductor laser and to obtain a stable light source.

発明の構成 本発明の構成は、半導体レーザ素子と、出射面が上記半
導体レーザ素子の共振器面より傾いた上記半導体レーザ
素子の気密封止用キャップを用いて反射光の活性層への
戻りを防ぐものである。
Structure of the Invention The structure of the present invention uses a semiconductor laser device and a cap for hermetically sealing the semiconductor laser device whose emission surface is inclined with respect to the resonator surface of the semiconductor laser device to prevent reflected light from returning to the active layer. It is something to prevent.

実施例の説明 本発明の半導体レーザ装置の第1の実施例の構成を第3
図に示す。第3図では気密封止用キャップ3の光出射面
を、半導体レーザ素子からの出射光6が、気密封止用キ
ャップ3の光出射窓2で反射しその反射光7が上記半導
体レーザ素子1の活性層9に戻らない程度に傾けて構成
することによって、光出射窓2の両端での反射が半導体
レーザ1の活性層9に入ることを防ぎ、半z、q体レー
ザの安定化が計れる。
DESCRIPTION OF EMBODIMENTS The structure of the first embodiment of the semiconductor laser device of the present invention will be explained in the third
As shown in the figure. In FIG. 3, the emitted light 6 from the semiconductor laser element is reflected by the light emitting window 2 of the hermetic sealing cap 3 on the light emitting surface of the hermetic sealing cap 3, and the reflected light 7 is transmitted to the semiconductor laser element 1. By configuring it so that it does not return to the active layer 9 of the semiconductor laser 1, reflections at both ends of the light exit window 2 can be prevented from entering the active layer 9 of the semiconductor laser 1, and the half-z, q-body laser can be stabilized. .

第2の実施例どして、本発明の半導体レーザ装置の光出
射窓2の材料に第4図に示すように磁気光学結晶12を
用いた。このように磁気光学結晶を用いた半導体レーザ
装置を光通信や光情報処理等の光源として用いた場合、
光アイソレータの機能を付加する構成を製品にとること
ができる。光アイソI/−夕とは半導体レーザ装置を光
通信用光源に用いた場合は光回路途中(例えば、光フア
イバコネクタ端など)、寸だ光情報処理の光源として用
いた場合とは例えば光デイスク面などからの反射光が光
源である半導体レーザに戻るとノイズとなり半導体レー
ザの発振か不安定となるため、半導体レーザからの出射
光は通すか、ノイズとなる半導体レーザへの戻り光は阻
止する働きをするものである。
In a second embodiment, a magneto-optic crystal 12 was used as the material for the light exit window 2 of the semiconductor laser device of the present invention, as shown in FIG. When a semiconductor laser device using a magneto-optic crystal is used as a light source for optical communication or optical information processing, etc.,
The product can be configured to add the function of an optical isolator. When a semiconductor laser device is used as a light source for optical communication, it is placed in the middle of an optical circuit (for example, at the end of an optical fiber connector), and when it is used as a light source for optical information processing, it is placed on an optical disk, for example. If reflected light from a surface returns to the semiconductor laser, which is the light source, it becomes noise and the oscillation of the semiconductor laser becomes unstable. Therefore, the light emitted from the semiconductor laser should be passed through, or the light returning to the semiconductor laser, which would cause noise, should be blocked. It is something that does work.

第4図には光フアイバ通信用光源として前記第2の実施
列を用い、光アイソレータの機能を伺加した光源の構成
図を示す。13は磁石、14は検光子で半導体レーザ素
子からの出射光の偏波方向と45°の位置に配置しであ
る。11はビーム変換機能を有する光学素子、15は光
ファイバである。
FIG. 4 shows a configuration diagram of a light source using the second embodiment as a light source for optical fiber communication and adding the function of an optical isolator. 13 is a magnet, and 14 is an analyzer, which are arranged at a position of 45° with respect to the polarization direction of the light emitted from the semiconductor laser element. 11 is an optical element having a beam conversion function, and 15 is an optical fiber.

ここで言うビーム変換機能を有する光学素子11とは、
球レンズ、屈折率分布型レンズ、半球レンズ、シリンダ
ーレンズなど何らかのビーム変換機能を有するものであ
る。半導体レーザ素子1からの偏波方向のそろった出射
光はビーム変換機能を有する光学素子11により平行光
にされ、偏波方向を450回転する厚さの磁気光学結晶
12よりなる光出射窓を通過する。このとき、光出射窓
の両端面からの反射光は半導体レーザ素子の活性層9に
はもどらない。
The optical element 11 having a beam conversion function referred to here is:
It has some kind of beam conversion function, such as a spherical lens, gradient index lens, hemispherical lens, or cylinder lens. Emitted light with the same polarization direction from the semiconductor laser element 1 is made into parallel light by an optical element 11 having a beam conversion function, and passes through a light exit window made of a thick magneto-optic crystal 12 that rotates the polarization direction by 450 degrees. do. At this time, the reflected light from both end faces of the light exit window does not return to the active layer 9 of the semiconductor laser element.

磁気光学結晶を半導体レーザ素子の発光面と平行に置い
た場合、磁気光学結晶の半導体レーザ素子側の端面から
の反射は反射防止膜をほどこしていない場合14%であ
ったのが、本発明により、0.5%以下になった。
When the magneto-optic crystal is placed parallel to the light emitting surface of the semiconductor laser element, the reflection from the end face of the magneto-optic crystal on the semiconductor laser element side was 14% when no anti-reflection film was applied, but with the present invention, , it became less than 0.5%.

なお、ビーム変換機能を有する光学素子11は窓材2に
一体化してもよい。
Note that the optical element 11 having a beam conversion function may be integrated into the window material 2.

第4図の装置の動作を述べると磁石13によって磁化さ
れた磁気光学結晶12中を通過することにより半導体レ
ーザ1からでた平行光は偏波方向が45°回転され、検
光子14を通過することができ、11の光学素子で集光
され、光ファイバ15に送られる。一方、検光子14を
通過してきた偏波方向のそろった出射方向と逆方向の光
は、磁気光学結晶12の非相反性により、磁気光学結晶
12を通過するときにさらに45°偏波面を回転し、光
学素子11を通って半導体レーザ1の活性層に戻る時、
偏波方向は半導体レーザの出射光の偏波方向と直交して
いる。したがって、半導体レーザの出射光の偏波方向と
直交する偏波方向の光は半導体レーザの雑音にはならず
発振特性の不安定化の原因にもならないので、半導体レ
ーザを安定化することができる。
To describe the operation of the apparatus shown in FIG. 4, the polarization direction of the parallel light emitted from the semiconductor laser 1 is rotated by 45 degrees by passing through the magneto-optic crystal 12 magnetized by the magnet 13, and the light passes through the analyzer 14. The light is collected by 11 optical elements and sent to an optical fiber 15. On the other hand, the light that has passed through the analyzer 14 and has the same polarization direction and is in the opposite direction to the output direction has its polarization plane further rotated by 45 degrees when passing through the magneto-optic crystal 12 due to the non-reciprocity of the magneto-optic crystal 12. However, when it passes through the optical element 11 and returns to the active layer of the semiconductor laser 1,
The polarization direction is perpendicular to the polarization direction of the light emitted from the semiconductor laser. Therefore, light with a polarization direction perpendicular to the polarization direction of the output light of the semiconductor laser does not become noise in the semiconductor laser and does not cause instability of the oscillation characteristics, so the semiconductor laser can be stabilized. .

発明の効果 本発明の半導体レーザ装置を用いることにより、共振器
面等の劣化を防止し、信頼性を確保するためには必要で
ある気密封止キャップの出射光面からの反射光が半導体
レーザの活性層に戻らない様にし、信頼性があり、かつ
発振特性が安定で、低雑音の半導体レーザ装置が実現で
きる。
Effects of the Invention By using the semiconductor laser device of the present invention, the reflected light from the light emitting surface of the hermetic sealing cap, which is necessary to prevent deterioration of the resonator surface, etc. and ensure reliability, is reflected from the semiconductor laser. It is possible to realize a semiconductor laser device that is reliable, has stable oscillation characteristics, and has low noise.

さらには、気密封止キャップの窓材を選ぶことによって
、アイソレータ等の構成が容易になり、信頼性があり、
かつ発振特性が安定で低雑音の半導体レーザ装置が実現
できる。
Furthermore, by selecting the window material for the hermetic sealing cap, the construction of the isolator etc. is easy and reliable.
Moreover, a semiconductor laser device with stable oscillation characteristics and low noise can be realized.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の気密封止キャップで密封した半導体レー
ザ装置の外観及び内部構成図、第2図は半導体レーザ素
子の要部拡大図、第3図は本発明の一実施例の半導体レ
ーザ装置の内部構成図、第4図は本発明の半導体レーザ
装置を用いた光通信用光源用アイソレータの構成図であ
る。 1・・−半導体レーザ素子、6・・−・・出射光、7−
・・・・光出射窓の両端からの反射光、8・・・・半導
体レーザの片側の共振器端面、9・・・活性層、12・
・・・・磁気光学結晶、13−・磁石。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名第1
図 2図 第3図 2 第4図
Fig. 1 is an external view and internal configuration diagram of a semiconductor laser device sealed with a conventional hermetic sealing cap, Fig. 2 is an enlarged view of main parts of a semiconductor laser element, and Fig. 3 is a semiconductor laser device according to an embodiment of the present invention. FIG. 4 is a diagram showing the internal configuration of an isolator for a light source for optical communication using the semiconductor laser device of the present invention. 1...-semiconductor laser element, 6...-emitted light, 7-
...Reflected light from both ends of the light exit window, 8.. Cavity end face on one side of the semiconductor laser, 9.. Active layer, 12.
...Magneto-optical crystal, 13--Magnet. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 2 Figure 3 Figure 2 Figure 4

Claims (2)

【特許請求の範囲】[Claims] (1)半導体レーザ素手からの出射光の気密封止用キャ
ップの光出射面の窓の端面における反射光が前記半導体
レーザ素子の活性層に戻らない程度に、前記気密封土用
ギャップの光出射面を傾けたことを特徴とする半導体レ
ーザ装置。
(1) Light is emitted from the airtight sealing gap to the extent that reflected light from the end face of the window on the light exit surface of the airtight sealing cap for light emitted from the semiconductor laser bare hand does not return to the active layer of the semiconductor laser element. A semiconductor laser device characterized by an inclined surface.
(2)半導体レーザ素子の気密封止用キャップの窓材に
磁気光学結晶を用いたことを特徴とする特許請求の範囲
第1項記載の半導体レーザ装置。
(2) A semiconductor laser device according to claim 1, characterized in that a magneto-optic crystal is used as a window material of a cap for hermetically sealing a semiconductor laser element.
JP58165534A 1983-09-08 1983-09-08 Semiconductor laser Pending JPS6057694A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58165534A JPS6057694A (en) 1983-09-08 1983-09-08 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58165534A JPS6057694A (en) 1983-09-08 1983-09-08 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS6057694A true JPS6057694A (en) 1985-04-03

Family

ID=15814212

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58165534A Pending JPS6057694A (en) 1983-09-08 1983-09-08 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS6057694A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0521456U (en) * 1991-08-27 1993-03-19 三菱電機株式会社 Laser diode module

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5783080A (en) * 1980-11-10 1982-05-24 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser module device
JPS57173992A (en) * 1981-04-17 1982-10-26 Nippon Telegr & Teleph Corp <Ntt> Coupling device for semiconductor laser to optical fiber
JPS5815287A (en) * 1981-07-21 1983-01-28 Nec Home Electronics Ltd Photosemiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5783080A (en) * 1980-11-10 1982-05-24 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser module device
JPS57173992A (en) * 1981-04-17 1982-10-26 Nippon Telegr & Teleph Corp <Ntt> Coupling device for semiconductor laser to optical fiber
JPS5815287A (en) * 1981-07-21 1983-01-28 Nec Home Electronics Ltd Photosemiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0521456U (en) * 1991-08-27 1993-03-19 三菱電機株式会社 Laser diode module

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