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JPS6051188B2 - Driving method of magnetic bubble memory - Google Patents

Driving method of magnetic bubble memory

Info

Publication number
JPS6051188B2
JPS6051188B2 JP17195179A JP17195179A JPS6051188B2 JP S6051188 B2 JPS6051188 B2 JP S6051188B2 JP 17195179 A JP17195179 A JP 17195179A JP 17195179 A JP17195179 A JP 17195179A JP S6051188 B2 JPS6051188 B2 JP S6051188B2
Authority
JP
Japan
Prior art keywords
data
page
magnetic bubble
bubble memory
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP17195179A
Other languages
Japanese (ja)
Other versions
JPS5694572A (en
Inventor
敏明 中
稔 寺島
敏人 原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17195179A priority Critical patent/JPS6051188B2/en
Publication of JPS5694572A publication Critical patent/JPS5694572A/en
Publication of JPS6051188B2 publication Critical patent/JPS6051188B2/en
Expired legal-status Critical Current

Links

Description

【発明の詳細な説明】 本発明は、シリアルループ型の磁気バブルメモリのアク
セスタイムを短縮する駆動法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a driving method for shortening the access time of a serial loop type magnetic bubble memory.

書換え可能な大容量不揮発性メモリとして磁気バブルメ
モリは甚だ有用であるが、このメモリは例えば第1図の
ように用いられる。同図において、MEMは磁気バブル
メモリで、中央処理装置(マイクロプロセッサ)MPU
とバスBにより接続され、またこのバスには小容量のラ
ンダムアクセスメモリRAMが接続される。磁気バブル
メモリMEMにはメジャー、マイナーループ型とシリア
ルループ型とあるが、シリアルループ型は第2図のよう
に、蛇行しながらも1つのループを構成するパーマロイ
パターンなどからなる転送路SRを用いて磁気バブルの
転送、保持を行なうもので、信号は直列形式になる。R
AMが用いられるのはこのためで、MPUは4ビット、
8ビットなどの複数ビット並列転送を行なうので、シリ
アルバブルメモリとの間で直並列変換を行なう。このシ
リアルバブルメモリは、構造は簡単ぜあるがアクセスタ
イムが長いという欠点がある。なお第2図において、R
EPはレプリケータ、DET、〜DET、はディテクタ
、ANHはアナイレータ、GENはジェネレータ、Lx
は駆動磁界発生用のXコイル、Lyは同Yコイルである
。この磁気バブルメモリMEMは72に詳しくは740
32ビットの例であり、ジェネレータGENの位置を(
O)ビット目として各々の位置に相当するビットを(7
3904)、(73907)等の数字で示してある。総
ビット数が; 74032であるから(O)ビット目と
(74032)ビット目は同じビットであり、この位置
でバブル発生、検出、消去が行なわれる。このバブルメ
モリでは全ビットを144バイトずつに区切つて各々を
1頁とし、各頁には数バイトフずつの開始および終了コ
ントロールデータと128バイトのデータ領域を設ける
A magnetic bubble memory is extremely useful as a rewritable large-capacity nonvolatile memory, and this memory is used, for example, as shown in FIG. In the figure, MEM is a magnetic bubble memory, and the central processing unit (microprocessor) MPU
and a bus B, and a small capacity random access memory RAM is connected to this bus. There are two types of magnetic bubble memory MEM: major and minor loop types and serial loop types.The serial loop type uses a transfer path SR consisting of a permalloy pattern that meanderes but forms one loop, as shown in Figure 2. This device transfers and holds magnetic bubbles, and the signal is in serial format. R
This is why AM is used, and MPU is 4 bits,
Since multiple bits such as 8 bits are transferred in parallel, serial-to-parallel conversion is performed with the serial bubble memory. Although this serial bubble memory has a simple structure, it has the disadvantage of long access time. In addition, in Fig. 2, R
EP is a replicator, DET, ~DET, is a detector, ANH is an anilator, GEN is a generator, Lx
is an X coil for generating a driving magnetic field, and Ly is a Y coil. This magnetic bubble memory MEM is 72 and 740 for details.
This is a 32-bit example, and the location of the generator GEN is (
O) Bits corresponding to each position are set as (7 bits)
3904), (73907), etc. Since the total number of bits is 74032, the (0)th bit and the (74032nd)th bit are the same bit, and bubble generation, detection, and erasure are performed at this position. In this bubble memory, all bits are divided into 144 bytes, each of which is one page, and each page is provided with several bytes of start and end control data and a 128 byte data area.

このような磁気バブルメモリMEMの第n頁に新たにデ
ータDn’を書込む場合には第3図に示すように、1先
ず第n頁に既に格納されているデータDnをランダムア
5クセスメモリRAMに続出し、2該RAMに追加デー
タDn’を書込んだ後、3磁気バブルメモリrv1EM
のバブルが一巡されて再び第n頁が戻つてきたときRA
Mの全データを該n頁に書込むという方法をとるのが普
通である。書込むべきデータがDn″+1,Dn″+2
・・・ ・・とある場合には各頁n+1,n+2・・・
・・・・について同様のことを行なうので、データ書込
みに必要な時間は相当に大となる。現在の磁気バブルメ
モリは、大量のデータを扱うことができればスピードは
遅くとも良いということで使用されるのが一般的である
が、勿論アクセスタイム小が望ましいことは言う迄もな
い。特に数10バイト以下の小容量単位でデータ書込み
、読出しを頻繁と行なう使用法ではそのアクセスタイム
大が実用上無視できないものとなつている。本発明はこ
の点を改善しようとするもので、シリアルループを備え
た磁気バブルメモ1八中央処理装置、およびランダムア
クセスメモリを有する磁気バブルメモリの駆動法におい
て、該磁気バブルメモリの第n頁目にデータを書込む際
は、該第n頁目に既に格納されているデータを一旦該ラ
ンダムアクセスメモリへ読出し、そして該ランダムアク
セスメモリに前記データを書込んだ後、該ランダムアク
セスメモリの全データを該磁気バブルメモリの第(n+
1)頁目に書込むことを特徴とするものであるが、以下
図示の実施例を参照しながらこれを詳細に説明する。
When writing new data Dn' to the n-th page of such a magnetic bubble memory MEM, as shown in FIG. 2 After writing additional data Dn' to the RAM, 3 magnetic bubble memory rv1EM
When the nth page comes back after the bubble has gone around
It is common practice to write all the data of M to the n pages. The data to be written is Dn″+1, Dn″+2
・・・In cases where it says, each page n+1, n+2...
Since the same thing is done for . . . , the time required for data writing becomes considerably long. Current magnetic bubble memories are generally used because they do not require a slow speed as long as they can handle a large amount of data, but it goes without saying that a short access time is desirable. Particularly in applications where data is frequently written and read in small capacity units of several tens of bytes or less, the access time is practically negligible. The present invention aims to improve this point, and provides a method for driving a magnetic bubble memory having a central processing unit having a serial loop and a random access memory. When writing data, first read the data already stored in the n-th page to the random access memory, then write the data to the random access memory, and then write all data in the random access memory. The (n+)th magnetic bubble memory
1) This is characterized by writing on the page, and this will be explained in detail below with reference to the illustrated embodiment.

第4図は本発明の一実施例であり、前出した各部と同一
部分には同一符号が付してある。
FIG. 4 shows an embodiment of the present invention, and the same parts as those described above are given the same reference numerals.

本発明では1回の転送容量が1頁(128/くイト)以
下の場合は常に1頁ずつを対象としてデータ転送を行な
う。そしてアクセスタイムを改善するために、壬データ
Dn″,Dn″+2,・(各データは128/曹■*卜
以内)を磁気バブルメモリMEMに書込む楊合には1磁
気バブルメモリMEMの第n頁目に既に格納されている
データDnをRAMに読出し、2該RAMへ新たに追加
データDn″を書込む。そして、3RAMの全データ(
Dn+Dn″)を次の第(n+1)頁目に書込む。同様
にして次のデータDn″+2を書込む場合には、4第(
n+2)頁目のデータDn+2をRAMに読出し、5該
RAMに新たにデータD″n+2を書込む。そして6R
AMの全データ7(Dn+2+D″n+2)を次の第(
n+3)頁目に書込む。この際n+1,n+3,・・・
・頁にあつたデータは、不要ならRAMからデータ(D
n+D″n)、(Dn+2+D″n+2)を該頁へ書込
む前に消去する。また必要データならRAMデータはN
.+1,n+3,・・・・頁に、その頁にあつたデータ
の後に続けて書込む。この処理は終了コントロールデー
タを利用して簡単にできる。これらのデータとそれが書
込まれた頁との対応関係は必要なら■用側で管理し、ま
たは各データに識別コードを付しておいて読出すときは
バブルメモリの全バイトを走査して所要データを検索す
るようにする。この本発明方式ではRAMからのバブル
メモリへの書込み4,6・ ・を、データDn,D
n+2,・・・・を読出した頁N,n+2,・・の次の
頁n+1,n+3,・・・・に対して行なうので、ルー
プの一巡時間を待つ必要はなく、従つて第3図の駆動法
よりはるかにアクセスタイムが短緒される。
In the present invention, when the transfer capacity at one time is less than one page (128/item), data is always transferred one page at a time. In order to improve the access time, when writing data Dn'', Dn''+2, . The data Dn already stored on the nth page is read to the RAM, and new additional data Dn'' is written to the RAM.Then, all the data in the 3RAM (
Dn+Dn'') on the next (n+1) page. Similarly, when writing the next data Dn''+2, write the 4th page (
Read data Dn+2 of page n+2) to the RAM, and write new data D″n+2 to the RAM. Then, 6R
All AM data 7 (Dn+2+D″n+2) is converted to the next (
Write on page n+3). At this time, n+1, n+3,...
・If the data on the page is not needed, it can be transferred from RAM (D
n+D″n), (Dn+2+D″n+2) is erased before writing to the page. Also, if the data is necessary, the RAM data is N
.. +1, n+3, . . . pages, write data following the data on that page. This process can be easily done using termination control data. If necessary, the correspondence between these data and the page in which they are written can be managed by the user, or an identification code can be attached to each data, and when reading it, all bytes of the bubble memory can be scanned. Search for the required data. In this method of the present invention, writing 4, 6, etc. from RAM to bubble memory is performed as data Dn, D
n+2,... is executed for the next page n+1, n+3,... after the read page N, n+2,..., so there is no need to wait for one cycle of the loop. The access time is much shorter than the drive method.

例えば転送速度が100Kビット/秒である場合に、1
頁分のアクセスタイムはとなり、第3図の方式(32K
バイトで平均アクセスタイムは370rT1SeC)に
比し約30倍の高速アクセ3スが可能となる。
For example, if the transfer rate is 100 Kbit/s, 1
The access time for a page is as shown in Figure 3 (32K
The average access time per byte is 370rT1SeC), which enables about 30 times faster access.

このためキーボードから連続して出力されるデータを不
揮発性メモリに即刻格納することが、シリアルループ型
の磁気バブルメモリでも充分可能となる。
Therefore, even a serial loop type magnetic bubble memory can sufficiently store data continuously output from the keyboard in a nonvolatile memory.

【図面の簡単な説明】[Brief explanation of drawings]

4(第1図は磁気バブルメモリを用いたシステムの一例
を示すブロック図、第2図はシリアルループ型の磁気バ
ブルメモリの一例を示す構成図、第3図は従来の磁気バ
ブルメモリ駆動法の説明図、第4図は本発明の一実施例
を示す説明図である。
4 (Figure 1 is a block diagram showing an example of a system using a magnetic bubble memory, Figure 2 is a block diagram showing an example of a serial loop type magnetic bubble memory, and Figure 3 is a block diagram showing an example of a system using a magnetic bubble memory). Explanatory diagram, FIG. 4 is an explanatory diagram showing one embodiment of the present invention.

Claims (1)

【特許請求の範囲】[Claims] 1 シリアルループを備えた磁気バブルメモリ、中央処
理装置、およびランダムアクセスメモリを有する磁気バ
ブルメモリの駆動法において、該磁気バブルメモリの第
n頁目にデータを書込む際は、該第n頁目に既に格納さ
れているデータを一旦該ランダムアクセスメモリへ読出
し、そして該ランダムアクセスメモリに前記データを書
込んだ後、該ランダムアクセスメモリの全データを該磁
気バブルメモリの第(n+1)頁目に書込むことを特徴
とする、シリアルループ型磁気バブルメモリの駆動法。
1. In a method for driving a magnetic bubble memory having a serial loop, a central processing unit, and a random access memory, when writing data to the n-th page of the magnetic bubble memory, the n-th page After reading data already stored in the random access memory into the random access memory and writing the data into the random access memory, all data in the random access memory is transferred to the (n+1)th page of the magnetic bubble memory. A method for driving a serial loop type magnetic bubble memory characterized by writing.
JP17195179A 1979-12-28 1979-12-28 Driving method of magnetic bubble memory Expired JPS6051188B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17195179A JPS6051188B2 (en) 1979-12-28 1979-12-28 Driving method of magnetic bubble memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17195179A JPS6051188B2 (en) 1979-12-28 1979-12-28 Driving method of magnetic bubble memory

Publications (2)

Publication Number Publication Date
JPS5694572A JPS5694572A (en) 1981-07-31
JPS6051188B2 true JPS6051188B2 (en) 1985-11-12

Family

ID=15932806

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17195179A Expired JPS6051188B2 (en) 1979-12-28 1979-12-28 Driving method of magnetic bubble memory

Country Status (1)

Country Link
JP (1) JPS6051188B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019171234A1 (en) 2018-03-09 2019-09-12 Pi Industries Ltd. Heterocyclic compounds as fungicides
WO2020070611A1 (en) 2018-10-01 2020-04-09 Pi Industries Ltd Oxadiazoles as fungicides
WO2020070610A1 (en) 2018-10-01 2020-04-09 Pi Industries Ltd. Novel oxadiazoles
WO2020208510A1 (en) 2019-04-08 2020-10-15 Pi Industries Limited Novel oxadiazole compounds for controlling or preventing phytopathogenic fungi
WO2020208511A1 (en) 2019-04-08 2020-10-15 Pi Industries Limited Novel oxadiazole compounds for controlling or preventing phytopathogenic fungi
WO2020208509A1 (en) 2019-04-08 2020-10-15 Pi Industries Limited Novel oxadiazole compounds for controlling or preventing phytopathogenic fungi

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019171234A1 (en) 2018-03-09 2019-09-12 Pi Industries Ltd. Heterocyclic compounds as fungicides
WO2020070611A1 (en) 2018-10-01 2020-04-09 Pi Industries Ltd Oxadiazoles as fungicides
WO2020070610A1 (en) 2018-10-01 2020-04-09 Pi Industries Ltd. Novel oxadiazoles
WO2020208510A1 (en) 2019-04-08 2020-10-15 Pi Industries Limited Novel oxadiazole compounds for controlling or preventing phytopathogenic fungi
WO2020208511A1 (en) 2019-04-08 2020-10-15 Pi Industries Limited Novel oxadiazole compounds for controlling or preventing phytopathogenic fungi
WO2020208509A1 (en) 2019-04-08 2020-10-15 Pi Industries Limited Novel oxadiazole compounds for controlling or preventing phytopathogenic fungi

Also Published As

Publication number Publication date
JPS5694572A (en) 1981-07-31

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