JPS6050004B2 - High dielectric constant porcelain composition - Google Patents
High dielectric constant porcelain compositionInfo
- Publication number
- JPS6050004B2 JPS6050004B2 JP56093333A JP9333381A JPS6050004B2 JP S6050004 B2 JPS6050004 B2 JP S6050004B2 JP 56093333 A JP56093333 A JP 56093333A JP 9333381 A JP9333381 A JP 9333381A JP S6050004 B2 JPS6050004 B2 JP S6050004B2
- Authority
- JP
- Japan
- Prior art keywords
- dielectric constant
- composition
- high dielectric
- added
- mol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
Description
【発明の詳細な説明】
本発明は100O゜C以下の極めて低温で焼結できる高
誘電率磁器組成物に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a high dielectric constant ceramic composition that can be sintered at an extremely low temperature of 100°C or less.
従来の高誘電率誘導体はチタン酸バリウム(BaT1O
3)、チタン酸ストロンチウム(SrTiO3)を主成
分としたものが広く実用化されている。The conventional high dielectric constant dielectric is barium titanate (BaT1O
3) Those containing strontium titanate (SrTiO3) as a main component are widely put into practical use.
しかしながら、これらBaTiO3、SrTiO。を主
成分とするものは通常焼成温度が1300〜1400℃
の高温でなければ焼結しない。このため高品質の積層セ
ラミックコンデンサ、厚膜コンデンサを製造しようとす
れば、おのずとこのコンデンサに用いる内部電極は、誘
電体材料が焼結する温度に耐える白金、白金−パラジウ
ム合金、パラジウム等の高価な貴金属を使用しなければ
ならないという欠点があり、内部電極の占める材料費は
コスト70%を”占め、このため積層セラミックコンデ
ンサ、厚膜コンデンサの低コスト化の障害となつている
。そこで、コンデンサの低コスト化を図るために、内部
電極に銀を主成分とした安価な電極を使用可能とする低
温焼結材料が必要である。本発明の目的は銀電極の融点
(960℃)付近で焼結が可能な磁器で誘電率が高く、
誘電損失が小さく、かつ比抵抗が大きい誘電体特性が優
れた高誘電率磁器組成物を提供するものてある。However, these BaTiO3, SrTiO. The firing temperature for those whose main component is usually 1300 to 1400℃
It will not sinter unless it is at a high temperature. Therefore, in order to manufacture high-quality multilayer ceramic capacitors and thick film capacitors, the internal electrodes used in these capacitors must be made of expensive materials such as platinum, platinum-palladium alloys, and palladium that can withstand the temperatures at which the dielectric material sinters. The disadvantage is that precious metals must be used, and the material cost for the internal electrodes accounts for 70% of the cost, which is an obstacle to reducing the cost of multilayer ceramic capacitors and thick film capacitors. In order to reduce costs, there is a need for a low-temperature sintered material that allows the use of inexpensive electrodes containing silver as the main component for internal electrodes. It is a porcelain that can be bonded and has a high dielectric constant.
The object of the present invention is to provide a high permittivity ceramic composition that has excellent dielectric properties such as low dielectric loss and high specific resistance.
本発明はPb(Mgl/3Nb2/ 3)O。The present invention is Pb(Mgl/3Nb2/3)O.
−CdTi0a一JPb(Fe2/3W1/ 3)00
の三成分系組成にPbO、MgOを過剰添加させること
により、焼結温度を低下させて1000℃以下で焼結可
能とし、しかも室温付近の温度で著しく誘電率が大きく
なり、誘電損失が小さく、比抵抗が大きい高性能な高誘
電率門磁器組成物を発明したものである。すなわち、本
発明の磁器組成物はPb(Mgl/3Nb2/3)03
とCdTiO3とPb(Fe2/3W1/3)qから成
る三成分系組成物を、〔Pb(Mgl/3Nb2/3)
03〕XCCdTiO3〕y〔Pb(Fe2/3W1/
3)03〕zと表わした時に、X,y,zがx=30〜
98n101%,y=1〜35n101%,z=1〜3
5rr101%(但し、x+y+z=100)の範囲内
にある組成物にPbO2〜20Wt%,MgOO.l〜
5wt%過剰に添加したことを特徴とする組成物であり
、この組成物にさらにMn,CO,Ce,Crの酸化物
及び粘度質物質のうち少なくとも1種以上を0.01〜
0.5Wt%添加させた組成物である。-CdTi0a-JPb(Fe2/3W1/3)00
By adding excessive amounts of PbO and MgO to the ternary composition, the sintering temperature can be lowered and sintering can be performed at 1000°C or lower, and the dielectric constant becomes significantly large at temperatures around room temperature, resulting in small dielectric loss. We invented a high-permittivity ceramic composition with high specific resistance and high performance. That is, the ceramic composition of the present invention has Pb(Mgl/3Nb2/3)03
A ternary composition consisting of [Pb(Mgl/3Nb2/3)
03]XCCdTiO3]y[Pb(Fe2/3W1/
3) When expressed as 03]z, X, y, z are x=30~
98n101%, y=1~35n101%, z=1~3
PbO2 to 20 Wt%, MgOO. l~
This composition is characterized in that an excess of 5 wt% is added, and at least one of Mn, CO, Ce, Cr oxides and viscosity substances is added to this composition in an amount of 0.01 to 0.01%.
This is a composition containing 0.5 wt%.
本発明の磁器組成物は、銀及び銀一貴金属合金の融点付
近の温度(1000℃以下)で焼結が可能であり、これ
らを内部電極に用いた積層セラミックコンデンサ、厚膜
コンデンサの誘電体材料として適用でき、これらのコン
デンサの製造コストが安価な内部電極により大幅に下げ
ることが可能になる。The ceramic composition of the present invention can be sintered at temperatures near the melting points of silver and silver-noble metal alloys (below 1000°C), and can be used as a dielectric material for multilayer ceramic capacitors and thick film capacitors using the composition for internal electrodes. The manufacturing cost of these capacitors can be significantly reduced due to the inexpensive internal electrodes.
以下、本発明を実施例とともに詳細に説明する。Hereinafter, the present invention will be explained in detail together with examples.
酸化鉛(PbO),酸化マグネシウム(MgO),酸化
ニオブ(Nb,O5),酸化チタン(TiO2),酸化
カドニウム(CdO),酸化鉄(Fe2O3),酸化タ
ングステン(WO3)の各原料を下記の第1表に示した
組成の全体が100fになるように秤量した。Each raw material of lead oxide (PbO), magnesium oxide (MgO), niobium oxide (Nb, O5), titanium oxide (TiO2), cadmium oxide (CdO), iron oxide (Fe2O3), and tungsten oxide (WO3) is The composition shown in Table 1 was weighed so that the total weight was 100f.
そして、これらの原料とともにメノウ石150f1純”
水120yをボールミルで混合させスラリー化した後、
固化乾燥させる。次に、アルミナルツボに乾燥物を入れ
700〜850℃で仮焼する。この仮焼粉末30Vに5
%PVA溶液1.8gを加えて均一混合した後、約70
0kg/Cltの圧力で直径15顛、厚み約0.4?に
成形した。この成形体を900〜1000℃で1時間焼
成して焼結体を得た。この焼結体に導電性銀ペーストを
塗布して電極を形成し電気的特性を測定した。その測定
結果を同じく第1表に示す。第1表からも明らかなよう
に本発明の範囲内の磁器組成物は、誘電率が大きく(ε
=1000〜20000)、誘電損失が極めて小さく(
Tanδ=0.3〜3.5%)、また比抵抗は1011
Ω・α以上で、しかも1000℃以下の低温で焼結が可
能である。なお、組成範囲外にあるものは、第1表に示
すように、(1)焼結しない。Along with these raw materials, we also use 150f1 pure agate stone.
After mixing 120y of water in a ball mill to make a slurry,
Let solidify and dry. Next, the dried material is placed in an alumina crucible and calcined at 700 to 850°C. 5 to 30V of this calcined powder
After adding 1.8g of %PVA solution and mixing uniformly, about 70% PVA solution was added and mixed uniformly.
At a pressure of 0 kg/Clt, the diameter is 15 mm and the thickness is about 0.4? It was molded into. This molded body was fired at 900 to 1000°C for 1 hour to obtain a sintered body. A conductive silver paste was applied to this sintered body to form electrodes, and the electrical properties were measured. The measurement results are also shown in Table 1. As is clear from Table 1, the ceramic composition within the scope of the present invention has a large dielectric constant (ε
= 1000 to 20000), and the dielectric loss is extremely small (
Tan δ = 0.3 to 3.5%), and the specific resistance is 1011
Sintering is possible at a temperature of Ω·α or more and at a low temperature of 1000°C or less. In addition, as shown in Table 1, those outside the composition range (1) are not sintered.
(2)焼結しても誘電率が低い。(2) Low dielectric constant even after sintering.
(3)焼結しても誘電損失が大きい。(3) Dielectric loss is large even after sintering.
等の材料及び材料特性を持つ組成物が得られ、誘電体材
料として使用できない。The result is a composition with materials and material properties such as , which cannot be used as a dielectric material.
したがつて、〔Pb(Mgl/3Nb2/3)03〕X
〔CdTlO3〕YCPb(Fe2/3W1/3)03
〕03+Awt%PbO+Bwt%MgOと表わした時
に、X,y,zの範囲を30<x〈98,1くy〈35
,1〈z〈35に限定する。Therefore, [Pb(Mgl/3Nb2/3)03]X
[CdTlO3]YCPb(Fe2/3W1/3)03
]03+Awt%PbO+Bwt%MgO, the range of X, y, z is 30<x<98,1×y<35
, 1〈z〈35.
これは範囲外になるとTc(キ**ユーリー点)が常温
から大きくずれ、εが1000以下になる。また、過剰
添加するPbO,MgO(7)A,Bを限定したのは、
渥%円O>A、及び0.1Wt%MgO〉Bでは100
0℃以下の低温領域では焼結しない。If it is outside this range, Tc (K** Ury point) will deviate greatly from room temperature and ε will become 1000 or less. In addition, the excessive addition of PbO, MgO (7) A, B was limited because
100 for 渥% yen O>A and 0.1Wt%MgO>B
It does not sinter at low temperatures below 0°C.
なお、20Wt%PbO<Al5Wt%MgO<Bでは
化学量論から大きくずれるため、磁器がポーラスになり
誘電損失が大きくなる。図は本発明に係る三成分系の組
成図を示しており、図中の数字は第1表゛中のNO.と
対応している。下記の第2表は鉱化剤を加えた場合の測
定結果である。Note that when 20Wt%PbO<Al5Wt%MgO<B, there is a large deviation from the stoichiometry, so the ceramic becomes porous and the dielectric loss increases. The figure shows a composition diagram of the ternary component system according to the present invention, and the numbers in the figure are NO. It corresponds to Table 2 below shows the measurement results when a mineralizing agent was added.
Mn,Ce,Cr,COの酸化物、粘度質物質のうち少
なくとも1種を鉱化剤として主成分に対して、0.01
〜0.5Wt%添加、含有せしめることにより磁器の焼
結性が良好で、かつ誘電損失及び温度特性の改善に効果
がある。以上に述べたように本発明の磁器組成物は、1
00(代)以下の低温で焼結し、通常ディスクコンデン
サのみならず、特に小型化、大容量を必要とする積層セ
ラミックコンデンサ、厚膜コンデンサの,材料として適
し、しかもこれらのコンデンサの内・部電極に銀系電極
を用いることが可能になり、製品コストの低減化が図ら
れる。At least one of Mn, Ce, Cr, and CO oxides and viscosity substances are used as a mineralizer, and 0.01
By adding and containing ~0.5 Wt%, the sinterability of the porcelain is good, and it is effective in improving the dielectric loss and temperature characteristics. As described above, the porcelain composition of the present invention has 1
It is sintered at a low temperature of 0.0000 or below, and is suitable as a material not only for ordinary disk capacitors, but also for multilayer ceramic capacitors and thick film capacitors that require miniaturization and large capacity. It becomes possible to use silver-based electrodes, and product costs can be reduced.
一方、1000℃以下の焼成のため安価な焼成炉の使用
を可能とし、かつ熱エネルギーを節約し得る非常に優れ
た組成物である。On the other hand, since it is fired at a temperature of 1000° C. or lower, it is an excellent composition that allows the use of an inexpensive firing furnace and saves thermal energy.
図は本発明に係る磁器組成物の三成分系組成図である。 The figure is a ternary composition diagram of the porcelain composition according to the present invention.
Claims (1)
2/3)O_3}とチタン酸カドニウム{CdTiO_
3}及び鉄・タングステン酸鉛{Pb(Fe2/3W1
/3)O_3から成る三成分系組成物を〔Pb(Mg1
/3Nb2/3)O_3〕x〔CdTiO_3〕y〔P
b(Fe2/3W1/3)O_3〕zと表わした時に、
x、y、zの範囲がx=30〜98mol% y=1〜35mol% z=1〜35mol%(但し、x+y+z=100)の
組成で、これらの組成物100に対して添加物として酸
化鉛(PbO)を2〜20wt%、酸化マグネシウム(
MgO)を0.1〜5wt%加えたことを特徴とする高
誘電率磁器組成物。 2 Mn、Co、Ce、Crの酸化物及び粘度質物のう
ち少なくとも1種以上を主成分に対して0.01〜0.
5wt%を含有してなる特許請求の範囲第1項記載の高
誘電率磁器組成物。[Claims] 1 Magnesium lead niobate {Pb (Mg1/3Nb
2/3) O_3} and cadmium titanate {CdTiO_
3} and iron/lead tungstate {Pb(Fe2/3W1
/3) A ternary composition consisting of O_3 [Pb(Mg1
/3Nb2/3)O_3]x[CdTiO_3]y[P
When expressed as b(Fe2/3W1/3)O_3]z,
The range of x, y, and z is x = 30 to 98 mol%, y = 1 to 35 mol%, z = 1 to 35 mol% (however, x + y + z = 100), and lead oxide is added as an additive to 100 of these compositions. (PbO) from 2 to 20 wt%, magnesium oxide (
A high dielectric constant ceramic composition characterized in that 0.1 to 5 wt% of MgO) is added. 2 At least one of Mn, Co, Ce, and Cr oxides and viscosity substances are added in an amount of 0.01 to 0.0% relative to the main component.
The high dielectric constant ceramic composition according to claim 1, containing 5 wt%.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56093333A JPS6050004B2 (en) | 1981-06-16 | 1981-06-16 | High dielectric constant porcelain composition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56093333A JPS6050004B2 (en) | 1981-06-16 | 1981-06-16 | High dielectric constant porcelain composition |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57208004A JPS57208004A (en) | 1982-12-21 |
JPS6050004B2 true JPS6050004B2 (en) | 1985-11-06 |
Family
ID=14079335
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56093333A Expired JPS6050004B2 (en) | 1981-06-16 | 1981-06-16 | High dielectric constant porcelain composition |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6050004B2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE72426T1 (en) * | 1985-04-25 | 1992-02-15 | Tam Ceramics Inc | CERAMIC COMPOSITION WITH VERY LOW SINTERING TEMPERATURE. |
-
1981
- 1981-06-16 JP JP56093333A patent/JPS6050004B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS57208004A (en) | 1982-12-21 |
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