JPS6048338A - Method of treating with plasma - Google Patents
Method of treating with plasmaInfo
- Publication number
- JPS6048338A JPS6048338A JP15570683A JP15570683A JPS6048338A JP S6048338 A JPS6048338 A JP S6048338A JP 15570683 A JP15570683 A JP 15570683A JP 15570683 A JP15570683 A JP 15570683A JP S6048338 A JPS6048338 A JP S6048338A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- discharge
- electrodes
- high frequency
- processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/14—Surface shaping of articles, e.g. embossing; Apparatus therefor by plasma treatment
- B29C59/142—Surface shaping of articles, e.g. embossing; Apparatus therefor by plasma treatment of profiled articles, e.g. hollow or tubular articles
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
Abstract
Description
【発明の詳細な説明】
技術分野
本発明はプラズマ処理技術に関する。本発明は、さらに
詳しく述べると、例えばポリエチレン、ポリプロピレン
等のポリオレフィン系プラスチック材料からなる製品(
被処理物)の表面を改質するためにその表面を高周波放
電プラズマで処理する方法に関する。DETAILED DESCRIPTION OF THE INVENTION TECHNICAL FIELD The present invention relates to plasma processing technology. More specifically, the present invention relates to products made of polyolefin plastic materials such as polyethylene and polypropylene.
The present invention relates to a method of treating the surface of a workpiece with high-frequency discharge plasma in order to modify the surface of the workpiece.
従来技術
近年、プラスチック製品、特に上述のようなポリオレフ
ィン系プラスチック材料からなる製品に対する塗装が広
く行なわれている。ところで、このような製品に、例え
ば鋼板塗装等に通常用いられているような塗料を塗装し
た場合には、製品表面とその上に施される塗膜との密着
性が極度に悪いので、不所望な層間剥離が■々発生した
。また、かかる問題を解消するため、塩素化樹脂等を混
入した特殊な塗料で塗装前の製品表面を下地処理すると
とが不可欠であった。BACKGROUND OF THE INVENTION In recent years, plastic products, particularly products made of polyolefin plastic materials such as those mentioned above, have been widely coated. By the way, if such a product is coated with a paint that is normally used for painting steel plates, etc., the adhesion between the product surface and the coating film applied thereon is extremely poor, resulting in defects. Desired delamination occurred from time to time. In addition, in order to solve this problem, it has been essential to pre-treat the surface of the product before painting with a special paint containing chlorinated resin or the like.
上記した下地処理は、非常に煩雑で、また、多大の出費
を必要とする。最近、下地処理に代るものとして、いわ
ゆる“プラズマ処理技術”が用いられている。プラズマ
処理技術とは、プラスチック製品の表面に例えば励起さ
れた酸素、窒素等の処理ガスのプラズマを照射してその
表面状態を改質し、よって、特殊な下地処理なしで常用
の塗料との密着性を向上させようとするものである。常
用のプラズマ処理技術には、グロー放電、コロナ放電、
高周波放電、マイクロ波放電等のいろいろな方式がある
。なかんずく、高周波放電方式は、例えば自動車部品等
のような大型製品の工業的規模での塗装に最適である。The above-mentioned surface treatment is very complicated and requires a large amount of expense. Recently, so-called "plasma treatment technology" has been used as an alternative to base treatment. Plasma treatment technology modifies the surface condition by irradiating the surface of plastic products with plasma of an excited processing gas such as oxygen or nitrogen, thereby improving the adhesion of commonly used paints without special surface treatment. It aims to improve sexuality. Commonly used plasma processing techniques include glow discharge, corona discharge,
There are various methods such as high frequency discharge and microwave discharge. Above all, the high frequency discharge method is most suitable for painting large products such as automobile parts on an industrial scale.
しかしながら、高周波放電によるプラズマ処理を実施す
る場合、最も一般的な約13.56MHzの高周波を適
用して処理容器の内壁全体に電極を設けた処理装置内で
それを行なうとすると、被処理物を満足に処理すること
ができない。実際、被処理物の形状が複雑であったり、
複数個の被処理物を同時に処理しようとする場合、被処
理物の凹部や、短極から離れた位置にある被処理面の処
理程度(処理性)が悪く、満足し得る塗膜との付着性が
得られないのが現状である。However, when performing plasma processing using high-frequency discharge, if the most common high frequency of about 13.56 MHz is applied and it is carried out in a processing apparatus with electrodes provided on the entire inner wall of the processing container, the object to be processed will be damaged. cannot be processed satisfactorily. In fact, the shape of the object to be processed is complex,
When trying to treat multiple objects at the same time, the degree of treatment (processability) of the recessed parts of the objects and the surfaces to be processed located far from the short poles may be poor, resulting in unsatisfactory adhesion with the paint film. The current situation is that it is not possible to obtain sex.
発明の目的
本発明の目的は、従来のプラズマ処理技術で問題のあっ
た処理の不均一性を解消し、すなわち、処理性の悪い部
位をなくしかつ複雑かつ大型の製品を処理する場合でも
極めてすぐれた均一な処理を行なうことのできるような
プラズマ処理方法を提供することにある。OBJECT OF THE INVENTION The purpose of the present invention is to eliminate the non-uniformity of processing that has been a problem with conventional plasma processing technology, that is, to eliminate areas that are difficult to process and to achieve extremely high performance even when processing complex and large products. The object of the present invention is to provide a plasma processing method that can perform uniform processing.
発明の構成
上記した目的は、本発明によれば、高周波放電によるプ
ラズマ処理を実施するに際して、処理容器内に電気的並
列に接続して配置された複数個の放電電極と対極との間
で高周波放電を起こさせて高周波プラズマを生成させる
ことによって達成することができる。According to the present invention, when performing plasma processing using high-frequency discharge, high-frequency electric current is generated between a plurality of discharge electrodes and a counter electrode that are electrically connected in parallel and arranged in a processing container. This can be achieved by generating high-frequency plasma by causing a discharge.
前記放電電極は、任意の形状をとり得るというものの、
板状であるのが有利である。さらに、前記放電電極は、
それを被処理物の形状に沿って配置するのが有利である
。Although the discharge electrode can take any shape,
Advantageously, it is plate-shaped. Furthermore, the discharge electrode is
It is advantageous to arrange it along the shape of the object to be treated.
前記対極は、この技術分野において通常行なわれている
ように、処理容器の内壁内に配置してもよく、さもなけ
れば、処理容器の内壁以外の適当な場所に独立して配置
してもよい。The counter electrode may be disposed within the inner wall of the processing vessel, as is commonly practiced in this technical field, or may be independently disposed at a suitable location other than the inner wall of the processing vessel. .
実施例
次に、添付の図面を参照しながら本発明の実施を説明す
る。EXAMPLES The implementation of the present invention will now be described with reference to the accompanying drawings.
最初に、比較のため、従来の高周波処理技術を第1図及
び第2図で説明すると、次の通りである:ステンレス銅
製の処理容器1に適当なハンガー手段(図示せず)を介
して被処理物(ここではコの字形被処理物)2を収容す
る。処理容器1内の空気を、油回転号ポンプ4で、排気
口3より排気し、減圧状態にする。次いで、プラズマ用
処理ガス(ここでは酸素ガス)を圧縮刺入した酸素ガス
ボンペ5より酸素ガスを送り、処理容器1内に設けたガ
ス導入口6を介して処理容器1内に酸素ガスを導入する
。次いで、高周波発振器7にて所定の高周波を発振させ
、処理容器1の内壁とそれにそって設けた円筒状電極8
との間で放電を起こさせ、高周波プラズマを生成させる
。このプラズマを被処理物上に噴射する。First, for comparison, the conventional high-frequency processing technique is explained with reference to FIGS. A processing object (here, a U-shaped processing object) 2 is accommodated. The air in the processing container 1 is exhausted from the exhaust port 3 by an oil rotary pump 4 to reduce the pressure. Next, oxygen gas is sent from an oxygen gas cylinder 5 into which a plasma processing gas (oxygen gas in this case) is compressed, and introduced into the processing container 1 through a gas inlet 6 provided in the processing container 1. . Next, a predetermined high frequency is oscillated by the high frequency oscillator 7, and the inner wall of the processing container 1 and the cylindrical electrode 8 provided along it are
A discharge is caused between the two and a high frequency plasma is generated. This plasma is injected onto the object to be processed.
第3図は、第1図及び第2図に示したプラズマ処理装置
の1変形例である。この装置では、円筒状電極8を廃止
し、そして、その代りとして、複数個(ここでは4個)
の放電電極8a、8b、8c及び8dを電気的直列に接
続して配置している。FIG. 3 shows a modification of the plasma processing apparatus shown in FIGS. 1 and 2. In FIG. In this device, the cylindrical electrode 8 is abolished, and instead, a plurality of (four in this case) electrodes are used.
The discharge electrodes 8a, 8b, 8c, and 8d are electrically connected in series and arranged.
放電電極は、それぞれ、コの字形被処理物2に沿って配
置されている。ここでも、処理容器1内に被処理物2を
収容し、そして容器1内の空気を油回転ポンプ4にて排
気口3より排気し、減圧状態にする。次いで、酸素ガス
ボンベ5より酸素ガスを送り、容器1内に設けたガス導
入口6より酸素ガスを導入する。次いで、高周波発振器
7を発振させ、電極8a〜8dと容器1の内壁との間に
放電を起こさせ、プラズマを生成させる。このプラズマ
を被処理物上に噴射する。The discharge electrodes are arranged along the U-shaped object 2 to be treated. Here, too, the object to be processed 2 is housed in the processing container 1, and the air in the container 1 is exhausted from the exhaust port 3 by the oil rotary pump 4 to create a reduced pressure state. Next, oxygen gas is sent from the oxygen gas cylinder 5 and introduced from the gas inlet 6 provided in the container 1. Next, the high frequency oscillator 7 is caused to oscillate to cause discharge between the electrodes 8a to 8d and the inner wall of the container 1, thereby generating plasma. This plasma is injected onto the object to be processed.
次いで、本発明による高周波プラズマ技術を第4図で説
明する。図示のプラズマ処理装置は、第3図のそれに似
ているというものの、放電電極の配置を異にする。すな
わち、第3図の放電電極は電気的直列に設けられている
のに反して、第4図の放電電極は導波ケーブル分岐器9
により電気的並列に設けられている。なお、放電電極は
、本発明を実施する場合、いずれも被処理物の形状に沿
って被処理物から80cm以内の距離に設けるのが有利
である。Next, the high frequency plasma technology according to the present invention will be explained with reference to FIG. Although the illustrated plasma processing apparatus is similar to that shown in FIG. 3, the arrangement of the discharge electrodes is different. That is, while the discharge electrodes in FIG. 3 are provided in electrical series, the discharge electrodes in FIG. 4 are connected to the waveguide cable branch 9.
are electrically connected in parallel. In addition, when carrying out the present invention, it is advantageous for the discharge electrode to be provided at a distance of 80 cm or less from the object to be processed, along the shape of the object to be processed.
ステンレス鋼製の処理容器1に適当なハンガー手段(図
示せず)を介して被処理物(ここではコの字形被処理物
)2を収容する。処理容器1内の空気を、油回転ポンプ
4で、排気口3より排気し、減圧状態にする。次いで、
プラズマ用処理ガス(ここでは酸素ガス)を圧縮封入し
た酸素ガスボンベ5より酸素ガスを送り、処理容器1内
に設けたガス導入口6を介して容器1内に酸素ガスを導
入する。同時に、高周波発振器7により、処理容器1内
に導波ケーブル分岐器9により電気的並列に股りられた
4個の電極8a〜8dと処理容器1の内壁との間で放電
を起こさせ、プラズマを生成させる。このプラズマを被
処理物上に噴射する。A workpiece (here, a U-shaped workpiece) 2 is housed in a processing container 1 made of stainless steel via a suitable hanger means (not shown). The air in the processing container 1 is exhausted from the exhaust port 3 using the oil rotary pump 4 to reduce the pressure. Then,
Oxygen gas is sent from an oxygen gas cylinder 5 in which plasma processing gas (oxygen gas in this case) is compressed and sealed, and introduced into the processing container 1 through a gas inlet 6 provided in the processing container 1 . At the same time, the high-frequency oscillator 7 causes electric discharge between the inner wall of the processing container 1 and four electrodes 8a to 8d electrically connected in parallel by the waveguide cable branch 9 in the processing container 1. to be generated. This plasma is injected onto the object to be processed.
次いで、本発明により達成可能なプラズマ処理性の向上
を、実施例をあげて説明する。Next, the improvement in plasma processability that can be achieved by the present invention will be described with reference to examples.
例1(従来例):
第1図及び第2図に図示の従来の高周波プラズマ処理装
置を使用して、コの字形状のポリプロピレン製品(被処
理物)をプラズマ処理した。ここで使用した処理装置及
び処理条件の詳細を以下に列挙する:
処理容器の寸法:直径1000mm×
長さ2000mm
処理容器の材質:ステンレス鋼
(SUS304)
マイクロ波周波数:2450MHz
マイクロ波発振出力:500W
高周波周波数:13.56MHz
高周波発振器出力:500W
減圧状態での処理容器内圧力:0.5Torr処理ガス
(導入量):O2(1000ml/min)処理時間:
30秒
被処理物の寸法:100mm×400mm×200mm
(コの字形状品)
被処理物の材質:ポリプロピレン
電極:直径1400mm×長さ1700mm×厚さ3m
mのアルミニウム製
円筒パンチングメタル
処理後、達成された処理性の程度を被処理物表面のいろ
いろな部位において接触角(水ヌレ性)及び付着性に関
して評価した。被処理物の評価部位を第5図に示す。す
なわち、被処理物表面上の11個の点A、B、C、D、
E、F、G、H、I、J及びKが評価部位である。得ら
れた評価結果を第1表に示す。Example 1 (Conventional example): A U-shaped polypropylene product (object to be treated) was plasma-treated using the conventional high-frequency plasma processing apparatus shown in FIGS. 1 and 2. Details of the processing equipment and processing conditions used here are listed below: Dimensions of processing container: Diameter 1000 mm x Length 2000 mm Material of processing container: Stainless steel (SUS304) Microwave frequency: 2450 MHz Microwave oscillation output: 500 W High frequency Frequency: 13.56MHz High frequency oscillator output: 500W Pressure inside the processing container in reduced pressure state: 0.5 Torr Processing gas (amount introduced): O2 (1000ml/min) Processing time:
Dimensions of object to be processed for 30 seconds: 100mm x 400mm x 200mm
(U-shaped product) Material of the object to be treated: Polypropylene Electrode: Diameter 1400mm x Length 1700mm x Thickness 3m
After processing the cylindrical punched metal made of aluminum, the degree of processability achieved was evaluated in terms of contact angle (water wettability) and adhesion at various locations on the surface of the workpiece. FIG. 5 shows the evaluation parts of the object to be treated. In other words, 11 points A, B, C, D on the surface of the object to be processed,
E, F, G, H, I, J and K are the evaluation sites. The obtained evaluation results are shown in Table 1.
例2(従来例):
第3図に図示の従来の高周波プラズマ処理装置を使用し
て、前記例1に同じ被処理物をプラズマ処理した。本例
で使用したプラズマ処理装置及び処理条件は、図示しか
つ以下に記載するように電極の形状が相違する点を除い
て、基本的に前記例1のそれに同じである。Example 2 (Conventional example): Using the conventional high frequency plasma processing apparatus shown in FIG. 3, the same workpiece as in Example 1 was plasma treated. The plasma processing apparatus and processing conditions used in this example were basically the same as those in Example 1 above, except for the difference in the shape of the electrodes as shown in the drawings and described below.
電極:200mm×200mm×3mmのアルミニウム
製板状パンチングメタル
電極数:4個(8a、8b、8c及び8d)処理後、達
成された処理性の程度を前記例1の場合と同様に被処理
物表面上の11ケ所の評価部位において接触角(水ヌレ
性)及び付着性に関して評価した。得られた評価結果を
下記の第1表に示す。Electrodes: 200 mm x 200 mm x 3 mm aluminum plate-shaped punched metal electrodes Number of electrodes: 4 (8a, 8b, 8c and 8d) After the treatment, the degree of processability achieved was measured in the same way as in Example 1 above. Contact angle (water wettability) and adhesion were evaluated at 11 evaluation sites on the surface. The obtained evaluation results are shown in Table 1 below.
例3(本発明例):
第4図に図示の本発明によるプラズマ処理装置を使用し
て、前記例2に記載のプラズマ処理を繰り返した。すな
わち、本例では、電極8a〜8dを電気的直列に接続し
ないで、導波ケーブル分岐器9を使用して電気的並列に
接続した。電極の形状を除く処理装置及び処理条件の詳
細は基本的に前記例2のそれに同じである。Example 3 (Example of the Invention): The plasma treatment described in Example 2 above was repeated using the plasma treatment apparatus according to the invention illustrated in FIG. That is, in this example, the electrodes 8a to 8d are not electrically connected in series, but are electrically connected in parallel using the waveguide cable branch 9. The details of the processing apparatus and processing conditions except for the shape of the electrodes are basically the same as those of Example 2 above.
処理後、達成された処理性の程度を前記例1と同様に評
価したところ、下記の第1表に記載の評価結果が得られ
た。After the treatment, the achieved degree of treatability was evaluated in the same manner as in Example 1, and the evaluation results shown in Table 1 below were obtained.
上記第1表において、“接触角”とは、5μlの脱イオ
ン水(純水)をプラズマ処理後の被処理物表面に滴下し
て、その時の水滴の被処理物表面での角度を市販の接触
角測定器で20℃及び50〜60%RH(相対湿度)で
測定したものである。In Table 1 above, "contact angle" refers to the angle of the water droplet on the surface of the workpiece when 5 μl of deionized water (pure water) is dropped onto the surface of the workpiece after plasma treatment. It was measured using a contact angle measuring device at 20° C. and 50 to 60% RH (relative humidity).
接触角は、その角度が小さければ小さいほど、親水性が
大でありかつしたがってプラズマ処理効果が大であるこ
とを意味する。さらに、“付着性”とは、プラズマ処理
後の被処理物にウレタン変性ポリエステル塗料を所定の
膜厚で塗布し、100℃で30分間にわたって焼付けし
、さらに24時間にわたって放置した後にコバン目テー
プ剥離試験で測定したものである。すなわち、“付着性
”とは、塗料塗膜に100個のゴパン目を刻み、テープ
を貼付し、さらにそのテープを剥離して、テープに付着
したままのゴバン目の数(剥離数)を測定したものであ
る。付着性は、当然のことながら、それがO/100に
近ければ近いほど良好である。The contact angle means that the smaller the angle, the greater the hydrophilicity and therefore the greater the plasma treatment effect. Furthermore, "adhesion" refers to applying a urethane-modified polyester paint to a predetermined film thickness on the object to be treated after plasma treatment, baking it at 100°C for 30 minutes, and then peeling off the diagonal tape after leaving it for 24 hours. This was measured in a test. In other words, "adhesion" means carving 100 goblets on the paint film, applying tape, then peeling off the tape, and measuring the number of goblets that remain attached to the tape (number of peelings). This is what I did. Of course, the closer the adhesion is to O/100, the better.
上記第1表に記載の評価結果から理解し得るように、例
1の場合には被処理物全体をかなり均一に処理するとと
ができたが、全体の処理レベルが低く、使用に耐えるも
のではなかった。例2の場合には、直列に電極を配置し
ているため、高周波発振器に近い被処理物の下面及び左
側面では処理性がすぐれているのに対し、発振器より遠
い被処理物の上面及び右側面では処理性が著しく低下し
た。本発明者らは、この対策として、出力の増加及び処
理時間の延長を試みたけれども、前者は大幅な設備投資
の増加を必要とし、後者は生産性の低下を招くので、好
ましくなかった。As can be understood from the evaluation results listed in Table 1 above, in the case of Example 1, it was possible to treat the entire object to be treated fairly uniformly, but the overall treatment level was low and it was not suitable for use. There wasn't. In the case of Example 2, since the electrodes are arranged in series, the processing performance is excellent on the bottom and left side of the workpiece near the high-frequency oscillator, whereas the top and right side of the workpiece far from the oscillator have excellent processing performance. On the other hand, the processability decreased significantly. The inventors of the present invention attempted to increase the output and extend the processing time as a countermeasure to this problem, but the former required a significant increase in equipment investment, and the latter was undesirable because it resulted in a decrease in productivity.
一方、例3(本発明例)では、複数個の放電電極を電気
的並列に接続したことにより、極めてすぐれた処理性を
得ることができた。これは、高周波が低出力であるにも
かかわらず、小さな電極を電気的にかつ配置上均一にか
つ効率的に配置することにより、すぐれた処理性が得ら
れたものと考えられる。On the other hand, in Example 3 (an example of the present invention), extremely excellent processability could be obtained by electrically connecting a plurality of discharge electrodes in parallel. This is thought to be due to the fact that despite the low output of the high frequency, excellent processability was achieved by arranging the small electrodes electrically and in a uniform and efficient manner.
発明の効果
本発明によれば、上記説明から明らかな如く、複数個の
放電電極を被処理物の形状に沿って電気的並列に接続し
て配置するので、処理性の悪い部位をなくすことができ
、そして複雑かつ大型の製品でも極めて均一にプラズマ
処理することができる。Effects of the Invention According to the present invention, as is clear from the above description, since a plurality of discharge electrodes are electrically connected and arranged in parallel along the shape of the object to be treated, it is possible to eliminate areas with poor processability. Even complex and large products can be plasma-treated extremely uniformly.
第1図は従来技術によるプラズマ処理装置の一例を示し
た略示図、
第2図は第1図に示した装置の縦断面図、第3図は第1
図に示した装置の1変形例を示した略示図、
第4図は本発明によるプラズマ処理装置の好ましい一例
を示した略示図、そして
第5図は被処理物の処理性評価部位を示した略示図であ
る。
図中、1は処理容器、2は被処理物、3は排気口、4は
油回転ポンプ、5は酸素ガスボンベ、6はガス導入口、
7は高周波発振器、8a〜8dは放電電極、そして9は
導波ケーブル分岐器である。
8(21図
4
4)l2図
第41コFIG. 1 is a schematic diagram showing an example of a conventional plasma processing apparatus, FIG. 2 is a vertical sectional view of the apparatus shown in FIG. 1, and FIG.
FIG. 4 is a schematic diagram showing a preferred example of the plasma processing apparatus according to the present invention, and FIG. FIG. In the figure, 1 is a processing container, 2 is an object to be processed, 3 is an exhaust port, 4 is an oil rotary pump, 5 is an oxygen gas cylinder, 6 is a gas inlet port,
7 is a high frequency oscillator, 8a to 8d are discharge electrodes, and 9 is a waveguide cable branch. 8 (21 Figure 4 4) l2 Figure 41
Claims (1)
容器内に電気的並列に接続して配置された複数個の放電
電極と対極との間で高周波放電を起こさせて高周波プラ
ズマを生成させることを特徴とするプラズマ処理方法。 2、前記放電電極の形状が板状である、特許請求の範囲
第1項に記載のプラズマ処理方法。 3、前記放電電極を被処理物の形状に沿って配置する、
特許請求の範囲第1項又は第2項に記載のプラズマ処理
方法。[Claims] 1. A plasma processing method using high-frequency discharge, which generates high-frequency discharge between a plurality of discharge electrodes and a counter electrode arranged electrically connected in parallel in a processing container. A plasma processing method characterized by generating plasma. 2. The plasma processing method according to claim 1, wherein the discharge electrode has a plate shape. 3. arranging the discharge electrode along the shape of the object to be treated;
A plasma processing method according to claim 1 or 2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15570683A JPS6048338A (en) | 1983-08-27 | 1983-08-27 | Method of treating with plasma |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15570683A JPS6048338A (en) | 1983-08-27 | 1983-08-27 | Method of treating with plasma |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6048338A true JPS6048338A (en) | 1985-03-16 |
Family
ID=15611730
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15570683A Pending JPS6048338A (en) | 1983-08-27 | 1983-08-27 | Method of treating with plasma |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6048338A (en) |
-
1983
- 1983-08-27 JP JP15570683A patent/JPS6048338A/en active Pending
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