[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

JPS6043651A - Plasma-resistant resist - Google Patents

Plasma-resistant resist

Info

Publication number
JPS6043651A
JPS6043651A JP15202483A JP15202483A JPS6043651A JP S6043651 A JPS6043651 A JP S6043651A JP 15202483 A JP15202483 A JP 15202483A JP 15202483 A JP15202483 A JP 15202483A JP S6043651 A JPS6043651 A JP S6043651A
Authority
JP
Japan
Prior art keywords
resist
plasma
silylating
silylating agent
resistant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15202483A
Other languages
Japanese (ja)
Inventor
Kazuyuki Tomita
和之 富田
Masuo Tanno
丹野 益男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP15202483A priority Critical patent/JPS6043651A/en
Publication of JPS6043651A publication Critical patent/JPS6043651A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

PURPOSE:To enhance resistance to heat, plasma, etc., by adding a silylating agent to a positive resist contg. novolak resin having a phenolic OH group and silylating it. CONSTITUTION:A silylating agent, such as hexamethyldisilane, is added to a positive resist having a phenolic -OH group to execute silylating reaction, as shown in the reaction formula, and to substitute H of said -OH for -SiR3. When an intended plasma-resistant resist thus obtained is etched, discoloration and weight loss of the resist film is small as compared with the case using a resist not treated with the silylating agent, high frequency power can be raised and the etching grade of the material to be etched can be increased, and the resist can be patterned in high resolution because the resist film can be made thin.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は半導体等の電子部品製造工程において使用する
耐プラズマ性レジストに関するものである0 従来例の構成とその問題点 従来のノボラック樹脂を主成分とするポジレジストは、
耐熱性、耐プラズマ性に乏しく、ドライエツチングの際
にはレジスト膜の変色、レジスト膜厚の減少が生じると
いう欠点を有していた。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a plasma-resistant resist used in the manufacturing process of electronic parts such as semiconductors. The positive resist is
It has the disadvantage of poor heat resistance and plasma resistance, and discoloration of the resist film and reduction in resist film thickness during dry etching.

発明の目的 本発明は上記欠点に鑑み、ポジレジストの耐熱性及び耐
プラズマ性を向上させた耐プラズマ性レジストを提供す
るものである。
OBJECTS OF THE INVENTION In view of the above drawbacks, the present invention provides a plasma-resistant resist with improved heat resistance and plasma resistance of a positive resist.

発明の構成 本発明は従来のポジレジストにシリル化剤を添加するこ
とKよりレジストの主成分であるノボラで示される変化
をさせ、フェノールfi−OH基のHをStに置換させ
たもので、耐熱性、耐プラズマ性を向上させるという特
有の効果を有するものである。
Structure of the Invention The present invention involves adding a silylating agent to a conventional positive resist to change K to nobora, which is the main component of the resist, and replacing H in the phenol fi-OH group with St. It has the unique effect of improving heat resistance and plasma resistance.

実施例の説明 以下本発明の一実施例について、図面を参照しながら説
明する。
DESCRIPTION OF EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.

第1図は本発明の実施例における耐プラズマ性レジスト
を用いたウェハプロセスを示すものである。第1図Aに
示す如くシリコン基板1上に被エツチング物2を形成し
、本発明による耐プラズマ性レジスト3を1oOoo八
程度塗へした。上記レジストは、○−ナフトキノンー1
,2−ジアジドスルホン酸エステルとノボラック樹脂と
からなるホトレジストに、シリル化剤であるヘキサメチ
ルジシランを添加したものである。つづいて、第1図B
に示す、如く耐プラズマ性レジスト3を紫外線6でマス
ク4を介して選択的に露光し、第1図Cに示す如く、ア
ルカリ性現象液を用いて現像した0 次にCCt4+6%02ガスを流量1oSαy、圧力0
.08Torr のもと、RFパワー120Wでプラズ
マ放電させた。
FIG. 1 shows a wafer process using a plasma-resistant resist in an embodiment of the present invention. As shown in FIG. 1A, an object to be etched 2 was formed on a silicon substrate 1, and a plasma-resistant resist 3 according to the present invention was coated to an extent of 80%. The above resist is ○-naphthoquinone-1
, 2-diazide sulfonic acid ester and a novolac resin, to which hexamethyldisilane as a silylating agent is added. Next, Figure 1B
The plasma-resistant resist 3 was selectively exposed to ultraviolet rays 6 through a mask 4 as shown in FIG. , pressure 0
.. Plasma discharge was performed under 0.8 Torr with RF power of 120 W.

第2図は従来のレジストと本発明による耐プラズマ性し
ジス+とのプラズマ照射時間とレジスト膜減り量の関係
を比較した図である。この図より明らかなようにポジレ
ジストをシリル化することにより耐プラズマ性が向上す
ることがわかる。また従来のポジレジストではプラズマ
照射後5分でレジストの変′色が見られたが、本発明の
耐プラズマ性しジス゛トでは10分照射の後も伺ら変色
はなく、耐熱性にも富んでいることがわかった。
FIG. 2 is a diagram comparing the relationship between the plasma irradiation time and the amount of resist film reduction between a conventional resist and a plasma-resistant resist according to the present invention. As is clear from this figure, plasma resistance is improved by silylating the positive resist. In addition, with conventional positive resists, discoloration of the resist was observed 5 minutes after plasma irradiation, but with the plasma-resistant resist of the present invention, there was no discoloration even after 10 minutes of irradiation, and it has excellent heat resistance. I found out that there is.

発明の効果 以上のようにポジレジストをシリル化することにより耐
熱性及び耐プラズマ性を向上させることができる。これ
によりドライエ、ツテングにおいてRF(高周波)パワ
ーを高め被エツチング物のエツチングレートを増加させ
ることができ、またレジストの膜厚が小さくて済むこと
より高解像度のパターンニングが可能となり、その実用
的効果は大なるものがある。
Effects of the Invention As described above, heat resistance and plasma resistance can be improved by silylating a positive resist. This makes it possible to increase the RF (radio frequency) power in the dryer and etching process and increase the etching rate of the object to be etched.Also, since the resist film thickness can be reduced, high-resolution patterning is possible, which has practical effects. There is something big about it.

なお、上記実施例においてはノボラック樹脂を主成分と
するポジレジストについてのみ効果を示したが、レジス
トにおいてはシリル化が可能な化学組成も持つものなら
シリル化して耐プラズマ性を高めることができる。
In the above embodiments, the effect was shown only for positive resists containing novolak resin as the main component, but if the resist has a chemical composition that allows silylation, it can be silylated to improve plasma resistance.

また、本実施例としてシリル化剤にヘキサメチルジシラ
ンを用いたが、5t−X結合(x:)蔦ロゲン、N、S
などの電子吸引性原子)を持つシリコン化合物であれば
シリル化剤として使用が可能である。
In addition, although hexamethyldisilane was used as the silylation agent in this example, 5t-X bond (x:) Tsutarogen, N, S
Silicon compounds having electron-withdrawing atoms such as

【図面の簡単な説明】[Brief explanation of the drawing]

第1図A、B、Cは本発明の一実施例におけるウェハプ
ロセス中のウエノ1の断面図、第2図はプラズマ照射時
間とレジスト膜減り量の関係を示したグラフである。 1・・・・・・従来のポジレジスト、2・・・・・・従
来のレジスト10溶に対し、シリル化剤0.6溶を添加
したレジスト、8・・・・従来のレジスト1o溶に対し
、シリル化剤1溶を添加したレジスト。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名第1
FIGS. 1A, B, and C are cross-sectional views of a wafer 1 during wafer processing in an embodiment of the present invention, and FIG. 2 is a graph showing the relationship between plasma irradiation time and resist film reduction amount. 1...Conventional positive resist, 2...Resist with 0.6 solution of silylating agent added to conventional resist 10 solution, 8...Conventional resist 10 solution On the other hand, a resist to which 1 solution of silylating agent was added. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
figure

Claims (1)

【特許請求の範囲】[Claims] フェノール性−〇H基を有するノボラック樹脂を含むポ
ジレジストにシリル化剤を添加した耐プラズマ性レジ・
スト。
A plasma-resistant resist made by adding a silylating agent to a positive resist containing a novolac resin having a phenolic -〇H group.
Strike.
JP15202483A 1983-08-19 1983-08-19 Plasma-resistant resist Pending JPS6043651A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15202483A JPS6043651A (en) 1983-08-19 1983-08-19 Plasma-resistant resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15202483A JPS6043651A (en) 1983-08-19 1983-08-19 Plasma-resistant resist

Publications (1)

Publication Number Publication Date
JPS6043651A true JPS6043651A (en) 1985-03-08

Family

ID=15531389

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15202483A Pending JPS6043651A (en) 1983-08-19 1983-08-19 Plasma-resistant resist

Country Status (1)

Country Link
JP (1) JPS6043651A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0683065A (en) * 1992-03-17 1994-03-25 Internatl Business Mach Corp <Ibm> Photoresist material and pattern forming method using material thereof
JPH0867562A (en) * 1995-09-25 1996-03-12 Taiyo Yuden Co Ltd Grain boundary insulating type semiconductor porcelain

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53135621A (en) * 1977-05-02 1978-11-27 Hitachi Ltd Photosensitive composition
JPS5626018A (en) * 1979-08-07 1981-03-13 Teijin Ltd Starting of false twisting machine
JPS5740248A (en) * 1980-06-14 1982-03-05 Hoechst Ag Photographic copying material and method of coating photosensitive copying layer on support

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53135621A (en) * 1977-05-02 1978-11-27 Hitachi Ltd Photosensitive composition
JPS5626018A (en) * 1979-08-07 1981-03-13 Teijin Ltd Starting of false twisting machine
JPS5740248A (en) * 1980-06-14 1982-03-05 Hoechst Ag Photographic copying material and method of coating photosensitive copying layer on support

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0683065A (en) * 1992-03-17 1994-03-25 Internatl Business Mach Corp <Ibm> Photoresist material and pattern forming method using material thereof
JPH0867562A (en) * 1995-09-25 1996-03-12 Taiyo Yuden Co Ltd Grain boundary insulating type semiconductor porcelain

Similar Documents

Publication Publication Date Title
MY100941A (en) A process of forming a negative patern in a photoresist layer.
JPH04286117A (en) Method of etching pattern in metal layer
US5041362A (en) Dry developable resist etch chemistry
JPH02191957A (en) Resist composition
JPH02115853A (en) Production of semiconductor device
US3767492A (en) Semiconductor masking
JPS6043651A (en) Plasma-resistant resist
JP2000124203A (en) Fine pattern formation method
EP0058214B1 (en) Method for increasing the resistance of a solid material surface against etching
JPH03174724A (en) Method of forming pattern
JPS6252550A (en) Photomask material
JP4495863B2 (en) Method of manufacturing a pattern suitable for forming a semi-trace width metal wire
JPS6362593B2 (en)
KR100327771B1 (en) Chemically treated photoresist for withstanding ion bombarded processing
EP0354536B1 (en) Pattering method
JPH02265932A (en) Etching of organic polymeric material
Berker et al. Characterization of AZ-2415 as a negative electron resist
JP7244795B2 (en) Composition for forming monomolecular layer or polymolecular layer, monomolecular layer or polymolecular layer, laminate, and method for producing substrate
JPS6256947A (en) Composition for flattened layer for resist having two-layered structure
JPS58202526A (en) Manufacture of x-ray exposure mask
JPS61214434A (en) Method for removing organic film
JPS63169030A (en) Manufacture of semiconductor device
JPS62208045A (en) Formation of pattern
JPS594858B2 (en) Method for forming electrodes and wiring layers in semiconductor devices
JPH03188447A (en) Formation of resist pattern