JPS6043651A - Plasma-resistant resist - Google Patents
Plasma-resistant resistInfo
- Publication number
- JPS6043651A JPS6043651A JP15202483A JP15202483A JPS6043651A JP S6043651 A JPS6043651 A JP S6043651A JP 15202483 A JP15202483 A JP 15202483A JP 15202483 A JP15202483 A JP 15202483A JP S6043651 A JPS6043651 A JP S6043651A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- plasma
- silylating
- silylating agent
- resistant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
- G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は半導体等の電子部品製造工程において使用する
耐プラズマ性レジストに関するものである0
従来例の構成とその問題点
従来のノボラック樹脂を主成分とするポジレジストは、
耐熱性、耐プラズマ性に乏しく、ドライエツチングの際
にはレジスト膜の変色、レジスト膜厚の減少が生じると
いう欠点を有していた。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a plasma-resistant resist used in the manufacturing process of electronic parts such as semiconductors. The positive resist is
It has the disadvantage of poor heat resistance and plasma resistance, and discoloration of the resist film and reduction in resist film thickness during dry etching.
発明の目的
本発明は上記欠点に鑑み、ポジレジストの耐熱性及び耐
プラズマ性を向上させた耐プラズマ性レジストを提供す
るものである。OBJECTS OF THE INVENTION In view of the above drawbacks, the present invention provides a plasma-resistant resist with improved heat resistance and plasma resistance of a positive resist.
発明の構成
本発明は従来のポジレジストにシリル化剤を添加するこ
とKよりレジストの主成分であるノボラで示される変化
をさせ、フェノールfi−OH基のHをStに置換させ
たもので、耐熱性、耐プラズマ性を向上させるという特
有の効果を有するものである。Structure of the Invention The present invention involves adding a silylating agent to a conventional positive resist to change K to nobora, which is the main component of the resist, and replacing H in the phenol fi-OH group with St. It has the unique effect of improving heat resistance and plasma resistance.
実施例の説明
以下本発明の一実施例について、図面を参照しながら説
明する。DESCRIPTION OF EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.
第1図は本発明の実施例における耐プラズマ性レジスト
を用いたウェハプロセスを示すものである。第1図Aに
示す如くシリコン基板1上に被エツチング物2を形成し
、本発明による耐プラズマ性レジスト3を1oOoo八
程度塗へした。上記レジストは、○−ナフトキノンー1
,2−ジアジドスルホン酸エステルとノボラック樹脂と
からなるホトレジストに、シリル化剤であるヘキサメチ
ルジシランを添加したものである。つづいて、第1図B
に示す、如く耐プラズマ性レジスト3を紫外線6でマス
ク4を介して選択的に露光し、第1図Cに示す如く、ア
ルカリ性現象液を用いて現像した0
次にCCt4+6%02ガスを流量1oSαy、圧力0
.08Torr のもと、RFパワー120Wでプラズ
マ放電させた。FIG. 1 shows a wafer process using a plasma-resistant resist in an embodiment of the present invention. As shown in FIG. 1A, an object to be etched 2 was formed on a silicon substrate 1, and a plasma-resistant resist 3 according to the present invention was coated to an extent of 80%. The above resist is ○-naphthoquinone-1
, 2-diazide sulfonic acid ester and a novolac resin, to which hexamethyldisilane as a silylating agent is added. Next, Figure 1B
The plasma-resistant resist 3 was selectively exposed to ultraviolet rays 6 through a mask 4 as shown in FIG. , pressure 0
.. Plasma discharge was performed under 0.8 Torr with RF power of 120 W.
第2図は従来のレジストと本発明による耐プラズマ性し
ジス+とのプラズマ照射時間とレジスト膜減り量の関係
を比較した図である。この図より明らかなようにポジレ
ジストをシリル化することにより耐プラズマ性が向上す
ることがわかる。また従来のポジレジストではプラズマ
照射後5分でレジストの変′色が見られたが、本発明の
耐プラズマ性しジス゛トでは10分照射の後も伺ら変色
はなく、耐熱性にも富んでいることがわかった。FIG. 2 is a diagram comparing the relationship between the plasma irradiation time and the amount of resist film reduction between a conventional resist and a plasma-resistant resist according to the present invention. As is clear from this figure, plasma resistance is improved by silylating the positive resist. In addition, with conventional positive resists, discoloration of the resist was observed 5 minutes after plasma irradiation, but with the plasma-resistant resist of the present invention, there was no discoloration even after 10 minutes of irradiation, and it has excellent heat resistance. I found out that there is.
発明の効果
以上のようにポジレジストをシリル化することにより耐
熱性及び耐プラズマ性を向上させることができる。これ
によりドライエ、ツテングにおいてRF(高周波)パワ
ーを高め被エツチング物のエツチングレートを増加させ
ることができ、またレジストの膜厚が小さくて済むこと
より高解像度のパターンニングが可能となり、その実用
的効果は大なるものがある。Effects of the Invention As described above, heat resistance and plasma resistance can be improved by silylating a positive resist. This makes it possible to increase the RF (radio frequency) power in the dryer and etching process and increase the etching rate of the object to be etched.Also, since the resist film thickness can be reduced, high-resolution patterning is possible, which has practical effects. There is something big about it.
なお、上記実施例においてはノボラック樹脂を主成分と
するポジレジストについてのみ効果を示したが、レジス
トにおいてはシリル化が可能な化学組成も持つものなら
シリル化して耐プラズマ性を高めることができる。In the above embodiments, the effect was shown only for positive resists containing novolak resin as the main component, but if the resist has a chemical composition that allows silylation, it can be silylated to improve plasma resistance.
また、本実施例としてシリル化剤にヘキサメチルジシラ
ンを用いたが、5t−X結合(x:)蔦ロゲン、N、S
などの電子吸引性原子)を持つシリコン化合物であれば
シリル化剤として使用が可能である。In addition, although hexamethyldisilane was used as the silylation agent in this example, 5t-X bond (x:) Tsutarogen, N, S
Silicon compounds having electron-withdrawing atoms such as
第1図A、B、Cは本発明の一実施例におけるウェハプ
ロセス中のウエノ1の断面図、第2図はプラズマ照射時
間とレジスト膜減り量の関係を示したグラフである。
1・・・・・・従来のポジレジスト、2・・・・・・従
来のレジスト10溶に対し、シリル化剤0.6溶を添加
したレジスト、8・・・・従来のレジスト1o溶に対し
、シリル化剤1溶を添加したレジスト。
代理人の氏名 弁理士 中 尾 敏 男 ほか1名第1
図FIGS. 1A, B, and C are cross-sectional views of a wafer 1 during wafer processing in an embodiment of the present invention, and FIG. 2 is a graph showing the relationship between plasma irradiation time and resist film reduction amount. 1...Conventional positive resist, 2...Resist with 0.6 solution of silylating agent added to conventional resist 10 solution, 8...Conventional resist 10 solution On the other hand, a resist to which 1 solution of silylating agent was added. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
figure
Claims (1)
ジレジストにシリル化剤を添加した耐プラズマ性レジ・
スト。A plasma-resistant resist made by adding a silylating agent to a positive resist containing a novolac resin having a phenolic -〇H group.
Strike.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15202483A JPS6043651A (en) | 1983-08-19 | 1983-08-19 | Plasma-resistant resist |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15202483A JPS6043651A (en) | 1983-08-19 | 1983-08-19 | Plasma-resistant resist |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6043651A true JPS6043651A (en) | 1985-03-08 |
Family
ID=15531389
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15202483A Pending JPS6043651A (en) | 1983-08-19 | 1983-08-19 | Plasma-resistant resist |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6043651A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0683065A (en) * | 1992-03-17 | 1994-03-25 | Internatl Business Mach Corp <Ibm> | Photoresist material and pattern forming method using material thereof |
JPH0867562A (en) * | 1995-09-25 | 1996-03-12 | Taiyo Yuden Co Ltd | Grain boundary insulating type semiconductor porcelain |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53135621A (en) * | 1977-05-02 | 1978-11-27 | Hitachi Ltd | Photosensitive composition |
JPS5626018A (en) * | 1979-08-07 | 1981-03-13 | Teijin Ltd | Starting of false twisting machine |
JPS5740248A (en) * | 1980-06-14 | 1982-03-05 | Hoechst Ag | Photographic copying material and method of coating photosensitive copying layer on support |
-
1983
- 1983-08-19 JP JP15202483A patent/JPS6043651A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53135621A (en) * | 1977-05-02 | 1978-11-27 | Hitachi Ltd | Photosensitive composition |
JPS5626018A (en) * | 1979-08-07 | 1981-03-13 | Teijin Ltd | Starting of false twisting machine |
JPS5740248A (en) * | 1980-06-14 | 1982-03-05 | Hoechst Ag | Photographic copying material and method of coating photosensitive copying layer on support |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0683065A (en) * | 1992-03-17 | 1994-03-25 | Internatl Business Mach Corp <Ibm> | Photoresist material and pattern forming method using material thereof |
JPH0867562A (en) * | 1995-09-25 | 1996-03-12 | Taiyo Yuden Co Ltd | Grain boundary insulating type semiconductor porcelain |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
MY100941A (en) | A process of forming a negative patern in a photoresist layer. | |
JPH04286117A (en) | Method of etching pattern in metal layer | |
US5041362A (en) | Dry developable resist etch chemistry | |
JPH02191957A (en) | Resist composition | |
JPH02115853A (en) | Production of semiconductor device | |
US3767492A (en) | Semiconductor masking | |
JPS6043651A (en) | Plasma-resistant resist | |
JP2000124203A (en) | Fine pattern formation method | |
EP0058214B1 (en) | Method for increasing the resistance of a solid material surface against etching | |
JPH03174724A (en) | Method of forming pattern | |
JPS6252550A (en) | Photomask material | |
JP4495863B2 (en) | Method of manufacturing a pattern suitable for forming a semi-trace width metal wire | |
JPS6362593B2 (en) | ||
KR100327771B1 (en) | Chemically treated photoresist for withstanding ion bombarded processing | |
EP0354536B1 (en) | Pattering method | |
JPH02265932A (en) | Etching of organic polymeric material | |
Berker et al. | Characterization of AZ-2415 as a negative electron resist | |
JP7244795B2 (en) | Composition for forming monomolecular layer or polymolecular layer, monomolecular layer or polymolecular layer, laminate, and method for producing substrate | |
JPS6256947A (en) | Composition for flattened layer for resist having two-layered structure | |
JPS58202526A (en) | Manufacture of x-ray exposure mask | |
JPS61214434A (en) | Method for removing organic film | |
JPS63169030A (en) | Manufacture of semiconductor device | |
JPS62208045A (en) | Formation of pattern | |
JPS594858B2 (en) | Method for forming electrodes and wiring layers in semiconductor devices | |
JPH03188447A (en) | Formation of resist pattern |