JPS60198838A - Probe card - Google Patents
Probe cardInfo
- Publication number
- JPS60198838A JPS60198838A JP5560484A JP5560484A JPS60198838A JP S60198838 A JPS60198838 A JP S60198838A JP 5560484 A JP5560484 A JP 5560484A JP 5560484 A JP5560484 A JP 5560484A JP S60198838 A JPS60198838 A JP S60198838A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- probe card
- protrusion
- film
- card
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Measuring Leads Or Probes (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、半導体ウェハーの電気特性検査に使用される
プローブカードに関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a probe card used for testing electrical characteristics of semiconductor wafers.
半導体装置の製造工程では、通常1枚の半導体結晶基板
(ウェハー)上にフォトエッチの技法を用いて多数個の
半導体装置の素子が形成される。In the manufacturing process of a semiconductor device, a large number of semiconductor device elements are usually formed on a single semiconductor crystal substrate (wafer) using a photo-etching technique.
そしてウェハー上にこれら素子が完成すると、ウェハー
検査又はブロービング検査と呼ばれる素子の電気特性の
検査が行なわれる。When these devices are completed on the wafer, the electrical characteristics of the devices are tested, which is called a wafer test or a blobbing test.
この後、これらの基板は個々の素子に切断分割され容器
に装着される。ここで、前述のウェハー検査の際、半導
体装置と電気特性検査装置とを電気的に接続する必要が
ある。Thereafter, these substrates are cut and divided into individual elements and mounted in a container. Here, during the above-mentioned wafer inspection, it is necessary to electrically connect the semiconductor device and the electrical property inspection device.
従来、上記の電気的接続には、グローブカードを呼ばれ
るものが使用され金属性の探針を半導体装置の所定の電
極に接続させることによシ行なわれていた。Conventionally, the above-mentioned electrical connection has been made by using a so-called globe card and connecting a metal probe to a predetermined electrode of the semiconductor device.
上記のプローブカードは、複数個の金属性針状探針が絶
縁性基板上にほぼ平行に固定され、その探針の先端が基
板面にほぼ垂直な方向に曲がシ、半導体装置の所定の電
極に接触する様罠なっている。The above-mentioned probe card has a plurality of metal needle-like probes fixed on an insulating substrate almost parallel to each other, and the tips of the probes are bent in a direction almost perpendicular to the substrate surface. It is a trap that makes contact with the electrode.
上記の様なプローブカードの構造では、多数の探針の先
端部分の高さのばらつきや素子の電極との位置ずれによ
シ接触不良を起し易かった。さらに、針状探針の本数の
多いプローブカードの製作には、探針先端の位置と高さ
の制御の高度の技術を要し、製作の自動化および量産化
は困難であつた。為に、前記グローブカードは非常に高
価なものであシ、作成にはかな、9Q手間と時間がかか
りた。In the structure of the probe card as described above, poor contact is likely to occur due to variations in the height of the tip portions of the many probes and misalignment with the electrodes of the elements. Furthermore, manufacturing a probe card with a large number of needle-shaped probes requires advanced technology for controlling the position and height of the probe tip, making it difficult to automate the production and mass-produce the card. Therefore, the glove card was very expensive, and it took nine months of effort and time to create it.
近年、半導体装置の高集積度化が急速に進みつつあシ、
それに伴なって電極面積および電極間隔は縮小化してい
る。しかし、前記プローブカードの製作は手作業による
為に、各探針間の間隔はおのずと制限され、上記半導体
装置の高集積度化の妨げとなっていた。In recent years, the degree of integration of semiconductor devices has been rapidly increasing.
Along with this, the electrode area and electrode spacing are becoming smaller. However, since the probe card is manufactured manually, the spacing between the probes is naturally limited, which hinders the increase in the degree of integration of the semiconductor device.
上記の様な従来のプローブカードの欠点を改善する為に
、絶縁性基板上に、導電性物質の突起を有するプローブ
カードが考案された。その内容は、例えば実公昭48−
7644、特開昭51−121267、特願昭53−5
7807などに開示されている。In order to improve the above-mentioned drawbacks of conventional probe cards, a probe card having protrusions of conductive material on an insulating substrate was devised. The contents are, for example,
7644, Japanese Unexamined Patent Publication No. 51-121267, Patent Application No. 53-5
No. 7807, etc.
第1図は、先行技術によるグローブカードの一例の断面
図である。FIG. 1 is a cross-sectional view of an example glove card according to the prior art.
このプローブカードは絶縁性基板1の主面上に、信号を
伝達する拡張電極2が設けられ、該拡張電極2の主面上
に導電性物質の突起3が設けられた構造となりている。This probe card has a structure in which an extended electrode 2 for transmitting signals is provided on the main surface of an insulating substrate 1, and a protrusion 3 made of a conductive material is provided on the main surface of the extended electrode 2.
ここで、前記導電性物質として、導電性ゴム又は、金又
は銀などの金属が用いられている。又、導電性物質の突
起3は、半導体装置の所定の電極位置に対応する位置に
設定されている。Here, as the conductive substance, conductive rubber or metal such as gold or silver is used. Furthermore, the protrusions 3 made of conductive material are set at positions corresponding to predetermined electrode positions of the semiconductor device.
さて、上述の突起を有するプローブカードを用いてウェ
ハー検査を行なう場合、上記突起には下記の要件を満足
する必要がある。Now, when performing a wafer inspection using a probe card having the above-mentioned protrusions, the above-mentioned protrusions must satisfy the following requirements.
(1):各突起と半導体装置の電極が低い接触抵抗とな
るため、各突起か電極に対して等しい接触圧力を有する
こと。(1): In order to have low contact resistance between each protrusion and the electrode of the semiconductor device, equal contact pressure should be applied to each protrusion or electrode.
(2):突起と電極が接触する際の衝撃によシ、電極部
分に損傷を与えないため、衝撃が充分吸収できること。(2): It must be able to sufficiently absorb the impact when the protrusion and the electrode come into contact, so as not to damage the electrode part.
(3):ウェハー検査を正確に行なうために、突起自身
の電気抵抗が低いこと。(3): In order to accurately perform wafer inspection, the electrical resistance of the protrusion itself must be low.
(優:接触、非接触を多数回くシ返しても、上記(1)
。(Excellent: Even if you repeat contact and non-contact many times, the above (1)
.
(2)、 (3)の要件を満足すると共に、各突起が前
記絶縁性基板から剥れないこと、などである。In addition to satisfying the requirements (2) and (3), each protrusion must not peel off from the insulating substrate.
ところで、先行技術による突起は、前記(1)、 (2
)#(3)、 (4)の要件全てを満足させることはで
きなかりた。つまシ、突起として導電性ゴムを使用し九
場合には、突起自身の抵抗が高くなシ検査における歩留
シを低下させていた。さらにウェハー検査中電流による
発熱に伴なう酸化によシ突起先端の劣化がはげしくグロ
ーブカードの寿命は著しく短いものであった。By the way, the protrusions according to the prior art are as described in (1) and (2).
) # It was not possible to satisfy all of the requirements in (3) and (4). When conductive rubber is used for the tabs and protrusions, the resistance of the protrusions themselves is high, reducing the yield in inspection. Furthermore, the tips of the protrusions were severely degraded by oxidation due to heat generated by the current during wafer inspection, and the life of the glove card was extremely short.
また、突起として金又は銀等の金属を用いた場合には、
弾性が弱く突起と電極が接触する際の衝撃を充分吸収し
きれなかった。その為、電極部分を破損する事故が多発
した。In addition, if metal such as gold or silver is used as the protrusion,
The elasticity was weak and the impact when the protrusions and electrodes came into contact could not be fully absorbed. As a result, there were many accidents in which the electrode part was damaged.
以上のように、先行技術によるグローブカードは、使用
上多くの問題があシ、実用には供さないものであった。As described above, the glove cards according to the prior art have many problems in use and are not suitable for practical use.
本発明は、かかる先行技術によるグローブカードの欠点
を改善し、実用上何ら問題のないグローブカードを提供
するものである。The present invention aims to improve the drawbacks of the glove card according to the prior art and provide a glove card that causes no practical problems.
本発明は絶縁性基板の一生面に、所定の形状な有する絶
縁性の弾性膜が設けられ、該弾性膜の主面上に拡張電極
が設けられ、さらに該拡張電極の主面上に金属性の突起
が設けられた構造のプローブカードであることを特徴と
する。In the present invention, an insulating elastic film having a predetermined shape is provided on the entire surface of an insulating substrate, an extended electrode is provided on the main surface of the elastic film, and a metallic film is further provided on the main surface of the extended electrode. The probe card is characterized by having a structure in which a protrusion is provided.
本発明を実施例によシ説明する。The present invention will be explained by way of examples.
第2図は、本発明の1実施例を示すプローブカードの断
面図である。ガラス又はガラス・エボキ7等の絶縁性基
板11の主面上に、シリコンゴム又はポリイミド等を塗
布し、しかる後にフォトエッチして得られた100μm
程度の厚さの上記シリコンゴム又はポリイミド等からな
る絶縁性の弾性膜12が設けられている。さらに、前記
弾性膜の主面上にOr、Ag、Au等をスパッタし、し
かる後にフォトエッチして得られた拡張電極13が設け
られている。拡張電極の主面上には、Au、Ag等を2
0μm〜50μmの厚さにメッキして形成され念金属性
突起14が設けられている。FIG. 2 is a sectional view of a probe card showing one embodiment of the present invention. A 100 μm thick film obtained by applying silicone rubber, polyimide, etc. on the main surface of an insulating substrate 11 made of glass or glass epoxy 7, etc., and then photoetching it.
An insulating elastic film 12 made of silicone rubber, polyimide, or the like is provided to a certain thickness. Further, an extended electrode 13 is provided on the main surface of the elastic film by sputtering Or, Ag, Au, etc., and then photoetching. Two layers of Au, Ag, etc. are placed on the main surface of the extended electrode.
It is formed by plating to a thickness of 0 .mu.m to 50 .mu.m and is provided with a metal projection 14.
本発明によるグローブカードは、前記の突起に要求され
る(1)、(2)、 (3L (4)の要件を全て満足
させることができる。つまシ、シリコンゴム又はボリイ
ミドの膜厚は容易に制御できる。さらに金属性突起の高
さも容易に制御できる。その為各突起の高さをほぼ等し
くでき、各突起は電極に対して等しい接触圧力で接する
ことができる。次に、シリコンゴム又は、ポリイミドな
どの絶縁性弾性膜は、突起と電極が接触する際の衝撃を
充分に吸収することができ、電極部分に損傷を与えない
。さらに金属性突起自身の電気抵抗は極めて低いためウ
ェハー検査を正確に行なうことができる。同時に上記弾
性膜及び金属性突起は、熱ストレス又は機械的ストレス
に対し充分な強度を有している。突起と電極との接触、
非接触を多数回〈シ返しても前記(1)、 (2)、
(3)の要件を充分満足させることができる。The glove card according to the present invention can satisfy all of the requirements (1), (2), and (3L (4)) required for the projections. Furthermore, the height of the metal protrusions can be easily controlled. Therefore, the height of each protrusion can be made approximately equal, and each protrusion can be in contact with the electrode with equal contact pressure.Next, silicone rubber or An insulating elastic film such as polyimide can sufficiently absorb the impact when the protrusion and the electrode come into contact, and will not damage the electrode part.Furthermore, the electrical resistance of the metal protrusion itself is extremely low, making it difficult to inspect the wafer. can be carried out accurately.At the same time, the elastic membrane and the metal protrusion have sufficient strength against thermal stress or mechanical stress.The contact between the protrusion and the electrode,
Even if you repeat non-contact many times, (1), (2),
The requirement (3) can be fully satisfied.
本発明によるグローブカードは、上記理由によシ、ウェ
ハー検査において実用上何ら問題のないものである。For the above reasons, the glove card according to the present invention poses no practical problems in wafer inspection.
さらに、本発明によるグローブカードは、近年顕しい進
歩をしているフォトエッチの技法を用いて製作できる為
、製造工程の自動化を充分針シ得るものである。為に、
プローブカードの製作に高度の技術を必要としない。Furthermore, since the glove card according to the present invention can be manufactured using the photo-etching technique, which has made significant progress in recent years, it is possible to fully automate the manufacturing process. For the sake of
No advanced technology is required to manufacture the probe card.
上記の様に、本発明によ多金属性突起を有するプローブ
カードにおいて従来問題となった事を全て解決すること
が可能となり、実用化することができる。As described above, the present invention makes it possible to solve all the conventional problems with probe cards having multimetallic protrusions, and to put it into practical use.
第1図は、先行技術によるグローブカードの1例を示す
断面図、第2図は、本発明の1実施例を示す断面図であ
る。
図中において、1.11・・・・・・絶縁性基板、2゜
13・・・・・・拡張電極、3.14・・・・・・突起
、12・・・・・・絶縁性弾性膜である。FIG. 1 is a sectional view showing an example of a glove card according to the prior art, and FIG. 2 is a sectional view showing an embodiment of the present invention. In the figure, 1.11...Insulating substrate, 2゜13...Extended electrode, 3.14...Protrusion, 12...Insulating elastic It is a membrane.
Claims (2)
ーブカードであって、該金属性の突起が所定の形状を有
する絶縁性の弾性膜を介して設置されていることを特徴
とするプローブカード。(1) A probe card having a metallic protrusion on one main surface of an insulating substrate, characterized in that the metallic protrusion is installed via an insulating elastic membrane having a predetermined shape. probe card.
は、ポリイミドが用いられていることを特徴とする特許
請求の範囲第(1)項記載のグローブカード。(2) The glove card according to claim (1), characterized in that the elastic film is made of a resin whose main raw material is silicon or polyimide.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5560484A JPS60198838A (en) | 1984-03-23 | 1984-03-23 | Probe card |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5560484A JPS60198838A (en) | 1984-03-23 | 1984-03-23 | Probe card |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60198838A true JPS60198838A (en) | 1985-10-08 |
Family
ID=13003370
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5560484A Pending JPS60198838A (en) | 1984-03-23 | 1984-03-23 | Probe card |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60198838A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62261972A (en) * | 1986-05-08 | 1987-11-14 | Mitsubishi Electric Corp | Substrate inspection device |
JPH01123157A (en) * | 1987-11-09 | 1989-05-16 | Hitachi Ltd | Probe head for semiconductor lsi inspecting apparatus and preparation thereof |
US5483741A (en) * | 1993-09-03 | 1996-01-16 | Micron Technology, Inc. | Method for fabricating a self limiting silicon based interconnect for testing bare semiconductor dice |
WO1996013728A1 (en) * | 1994-10-28 | 1996-05-09 | Nitto Denko Corporation | Probe structure |
JP2000200812A (en) * | 1990-02-16 | 2000-07-18 | Glenn J Leedy | Manufacture and test method for integrated circuit using high density probe point |
-
1984
- 1984-03-23 JP JP5560484A patent/JPS60198838A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62261972A (en) * | 1986-05-08 | 1987-11-14 | Mitsubishi Electric Corp | Substrate inspection device |
JPH01123157A (en) * | 1987-11-09 | 1989-05-16 | Hitachi Ltd | Probe head for semiconductor lsi inspecting apparatus and preparation thereof |
JPH0640106B2 (en) * | 1987-11-09 | 1994-05-25 | 株式会社日立製作所 | Probe head for semiconductor LSI inspection device and manufacturing method thereof |
JP2000200812A (en) * | 1990-02-16 | 2000-07-18 | Glenn J Leedy | Manufacture and test method for integrated circuit using high density probe point |
US5483741A (en) * | 1993-09-03 | 1996-01-16 | Micron Technology, Inc. | Method for fabricating a self limiting silicon based interconnect for testing bare semiconductor dice |
WO1996013728A1 (en) * | 1994-10-28 | 1996-05-09 | Nitto Denko Corporation | Probe structure |
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