JPS60134433A - Inspection for semiconductor wafer - Google Patents
Inspection for semiconductor waferInfo
- Publication number
- JPS60134433A JPS60134433A JP24978383A JP24978383A JPS60134433A JP S60134433 A JPS60134433 A JP S60134433A JP 24978383 A JP24978383 A JP 24978383A JP 24978383 A JP24978383 A JP 24978383A JP S60134433 A JPS60134433 A JP S60134433A
- Authority
- JP
- Japan
- Prior art keywords
- chips
- inspection
- pieces
- defective
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
く技術分野〉
本発明は半導体装置の製造工程途中に行われる半導体チ
ップの検査方法に関し、特にウェノ・−状態で実行され
る検査方法の改良に関するものである0
〈従来技術〉
LS1.IC等の半導体装置を製造する過程では、生産
の効率化を図るために工程の途中で各種の性能検査が実
施されている。このような半一〇休業積回路装置の製造
過程における検査工程は、微細配線化、高集積化が進ん
だ結果、検査に要する時間が著しく増大し、半導体装置
の製造に必要な時間の中で相当の時間を占めるようにな
り、最大のネックになっている。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a semiconductor chip inspection method performed during the manufacturing process of a semiconductor device, and particularly relates to an improvement of an inspection method performed in a wet state. Technology> LS1. In the process of manufacturing semiconductor devices such as ICs, various performance tests are carried out during the process in order to improve production efficiency. As a result of advances in finer wiring and higher integration, the inspection process in the manufacturing process of integrated circuit devices, which takes half a day off work, has significantly increased the time required for inspection. This is now taking up a considerable amount of time and has become the biggest bottleneck.
処で現在性われているLSI製造過程の検査工程は大別
するとウェハー状態にある各チップについて実施される
W/T (ウェハーテスト)工程と、全工程を終えた最
終製品の状態で実施されるF/T(ファイナルテスト)
工程に分けることができ、上記検査時間の増大はその両
方に影響を与えている。そのだめ従来から検査時間の短
縮化を図るためにW/T工程では工程の性格上、あまり
厳密に検査する必要がないことから、全検査項目の検査
は行わず、F/T工程の歩留りを極端に低下させない程
度の検査を行なうことが提案されており、また実際の工
程にも採用されている。即ち検査項目を省略することで
検査時間の短縮を計っている。The inspection processes currently being carried out in the LSI manufacturing process can be roughly divided into the W/T (wafer test) process, which is carried out on each chip in the wafer state, and the test process, which is carried out on the final product after all processes have been completed. F/T (Final test)
The inspection time can be divided into two steps, and the increase in inspection time affects both of them. Therefore, in order to shorten the inspection time, in the W/T process, due to the nature of the process, there is no need for very strict inspection, so all inspection items are not inspected, and the yield of the F/T process is reduced. It has been proposed to conduct inspections that do not cause excessive deterioration, and this has also been adopted in actual processes. In other words, the inspection time is shortened by omitting inspection items.
ここで重要な点は、W/T工程で省略する事の出来る検
査項目は、不良発生率の低い項目だけである点である。The important point here is that the inspection items that can be omitted in the W/T process are only those with a low failure rate.
又通常不良発生率が低くても、つエバープロセスの変化
によシ突発的に不良発生率が高くなる場合があや、この
様な場合に、F/T歩留りが極端に低下する為あまり検
査項目の省略は好ましくない。In addition, even if the defect rate is normally low, there may be cases where the defect rate suddenly increases due to changes in the ever-processing process. It is not preferable to omit .
〈発明の目的〉
本発明は上記従来の検査方法における問頴点に鑑みてな
されたもので、W/T工程の検査時間の短縮を計りなが
ら、F/T工程の歩留り低下を防ぐことができる検査方
法である。<Object of the Invention> The present invention has been made in view of the problems with the conventional inspection methods described above, and can prevent a decrease in yield in the F/T process while shortening the inspection time in the W/T process. This is an inspection method.
〈実施例〉
図は本発明による検査方法を実施するための検査装置l
のチップ抜き取9信号を発生する回路のブロック図であ
る。該信号発生回路1は順次送られてくるウェハー上の
チップに対して、n個置きに抜き取り検査するだめのn
個を計数するn進カウンタ2及び不良検出時にm個を連
続して検査するだめのm個を計数するm進カウンタ3が
設けられている。ここfm>nに設計されることが望ま
しい。上記n進カウンタ2の入力端には第1アンドゲー
トG1が設けられ、該第1アンドゲートG1の入力端に
は検査要求入力信号4及び上記m進カウンタ3のオーバ
ーフロ信号5が与えられている。<Example> The figure shows an inspection apparatus l for carrying out the inspection method according to the present invention.
FIG. 2 is a block diagram of a circuit that generates a chip extraction signal of FIG. The signal generating circuit 1 performs a sampling inspection every nth chip on a wafer that is sequentially sent.
An n-ary counter 2 is provided to count the number of defects, and an m-ary counter 3 is provided to count the number of m items that must be continuously inspected when a defect is detected. Here, it is desirable to design fm>n. A first AND gate G1 is provided at the input terminal of the n-ary counter 2, and the inspection request input signal 4 and the overflow signal 5 of the m-ary counter 3 are applied to the input terminal of the first AND gate G1. There is.
該m進カウンタ3から出力されたオーバーフロ信号5の
反転信号5は、上記検査要求入力信号4と共にm進カウ
ンタ3の入力段に設けられた第2アンドゲートG2に入
力されている。該第2アンドゲートG2.の出力はm進
カウンタ3に与えられると共に第1オアゲートOR1に
も与えられ、検査要求出力信号6を形成する。即ち第1
オアゲートOR,の他方の入力端子には上記n進カウン
タ2第2アンドゲートG2からの信号によって抜き取り
検査のだめの検査要求出力信号6を形成する。The inverted signal 5 of the overflow signal 5 output from the m-ary counter 3 is inputted together with the inspection request input signal 4 to the second AND gate G2 provided at the input stage of the m-ary counter 3. The second AND gate G2. The output of is applied to the m-adic counter 3 and also to the first OR gate OR1 to form the inspection request output signal 6. That is, the first
At the other input terminal of the OR gate OR, an inspection request output signal 6 for a sampling inspection is formed by a signal from the second AND gate G2 of the n-ary counter 2.
上記n進カウンタ2のオーバーフロ信号7はn進カウン
タ2のリセット端子に与えられ、n個を計数すると自身
のカウンタをリセットする。オーバーフロ信号7は反転
信号7が第3アントゲ−)G3に与えられる。該第3ア
ンドゲートG3 の他方の入力端には上記第1アンドゲ
ートG1 の出力信号が与えられ、第3アンドゲートG
3の出力は第2入力端にはテスタからテスト項目毎に出
力される検査終了入力信号8が与えられ、第2オアゲー
トOR2から検査終了出力信号9が出力され、入力され
た検査要求項目に対する検査が終了したことを示す。The overflow signal 7 of the n-ary counter 2 is applied to the reset terminal of the n-ary counter 2, and when it counts n items, it resets its own counter. An inverted signal 7 of the overflow signal 7 is applied to the third antagonist G3. The output signal of the first AND gate G1 is applied to the other input terminal of the third AND gate G3.
The output of No. 3 is a test completion input signal 8 outputted from the tester for each test item to the second input terminal, and a test completion output signal 9 is output from the second OR gate OR2 to perform the test for the input test request item. Indicates that the process has ended.
上記検査終了に対応して、検査結果が良であったか不良
であったかを示す信号がテスタから出力されるが、良品
入力信号10は第3オアゲートOR3を介して良品出力
信号llとして出力され、不良品入力信号12は不良品
出力信号■3として出力される。該不良品入力信号12
はm進カウンタ3のリセット端子にも与えられ、不良品
が検出された状態でm進カウンタ8をリセットし、続い
て送られてくるm個のチップに対して連続的に検査要求
出力信号6を形成する。Corresponding to the completion of the above inspection, a signal indicating whether the test result is good or bad is output from the tester, but the good product input signal 10 is outputted as the good product output signal ll via the third OR gate OR3, and the defective product The input signal 12 is output as a defective product output signal 3. The defective product input signal 12
is also applied to the reset terminal of the m-ary counter 3, and when a defective product is detected, the m-ary counter 8 is reset, and the inspection request output signal 6 is continuously sent to the subsequently sent m chips. form.
上記構成を備えた検査装置の動作を説明する。The operation of the inspection device having the above configuration will be explained.
W/T工程での検査を完全に省略すると、ウェハープロ
セスの変化等によシある時期F/T歩留りの低下をきた
す惧れがあるため、完全には省略せずに任意の個数(本
実施例ではn個)おきに検査を行うことにより、ウェハ
ープロセスの変化をモニターする。抜き取り検査するだ
めのIInI+の設定は、ウェハー1枚当りに作製され
るチップ数及び良品と不良品の発生する可能性の大小に
よって経験的にめられる。If inspection in the W/T process is completely omitted, there is a risk that the F/T yield will decline at some point due to changes in the wafer process, etc. In the example, changes in the wafer process are monitored by inspecting every n pieces. The setting of IInI+ that should not be subjected to sampling inspection is determined empirically depending on the number of chips produced per wafer and the probability of producing good products and defective products.
検査要求入力信号4がn個計数される毎にn進カウンタ
2から出力されるオーバーフロ信号7により第1オアゲ
ートG1を介して検査要求出力信号6が形成され、抜き
取り検査が実行される。n個おきのサンプリングによシ
ウェハープロセスの変化、又はウェハー特性の変化を感
知した場合、即ち不良入力信号12が発生した場合には
、lη進カウンタ3がリセットされて以降の検査チップ
はn個おきの抜き取り検査を廃止し、各チップの送シ毎
に発せられる検査要求入力信号4により、第2アンドゲ
ートG2、第1オアゲートG1ヲ介して、m進カウンタ
3がオーバーフロするまでm測成枚数等により任意に設
定される。上記m個の連続検査が終了した場合には、I
n進カウンタ8のオーバーフロ信号により第2アンドゲ
ートG2 を遮断し、第1アンドゲートG1ff:介し
て再びn進カウンタ2にn個おきに検査要求信号4を入
力してn個おきの抜き取り検査に戻る。Every time n inspection request input signals 4 are counted, an overflow signal 7 output from the n-ary counter 2 generates an inspection request output signal 6 via the first OR gate G1, and a sampling inspection is performed. When a change in the wafer process or a change in wafer characteristics is detected by sampling every n chips, that is, when a defective input signal 12 occurs, the lη-adic counter 3 is reset and the number of chips to be tested after that is n chips. The inspection request input signal 4, which is issued every time each chip is sent, is used to conduct m-measurements through the second AND gate G2 and the first OR gate G1 until the m-adic counter 3 overflows. It is arbitrarily set depending on the number of sheets, etc. When the above m consecutive tests are completed, I
The second AND gate G2 is cut off by the overflow signal of the n-ary counter 8, and the inspection request signal 4 is inputted to the n-ary counter 2 every n items again through the first AND gate G1ff, thereby performing a sampling inspection every n items. Return to
上記検査工程は、同一ウェハー又は同一ロットであれば
そのウェハー又はロットは同様な特性であることを利用
してサンプリング測定し、不良が検知された場合には、
そのウニ・・−又はロットについて連続的に検査を実行
するため、最初から全数検査を行なう場合に比べて、多
少のF/T歩留りの低下は起り得るものの、W/T工程
の工数低減を考えるとそのメリットが大きい。In the above inspection process, if the wafer or the same lot is the same, the wafer or the lot has similar characteristics and is sampled and measured, and if a defect is detected,
Since inspections are performed continuously on the sea urchins or lots, the F/T yield may decrease somewhat compared to the case where 100% is inspected from the beginning, but it is considered to reduce the number of man-hours in the W/T process. And the benefits are great.
上記検査方法は、ICのようにW/T歩留りの高い工程
については部分的に小蟲伯壬子良発生率の低いテスト項
目のみに適用することも可能である。The above inspection method can be partially applied only to test items with a low incidence of small insects in a process with a high W/T yield such as IC.
〈効果〉
以上本発明によれば、同一プロセスを経たウェハーに多
数のチップが搭載されることから、n個毎に抜き取りサ
ンプリングして検査し、不良が検出された場合には近傍
のチップは特性が極めて類似していることからm個を連
続的にテストすることにより、突発的なウェハープロセ
スの変化によるファイナルテスト歩留りの低下を防ぎな
がら、ウェハーテストのテスト時間の短縮又はテスト工
数の低減を計ることができる。<Effects> According to the present invention, since a large number of chips are mounted on a wafer that has gone through the same process, sampling is performed every n chips for inspection, and if a defect is detected, the characteristics of neighboring chips are changed. By continuously testing m pieces because they are extremely similar, it is possible to shorten the test time or test man-hours for wafer testing while preventing a drop in final test yield due to sudden changes in the wafer process. be able to.
図は本発明による一実施例を説明するためのチップ抜き
取り信号発生回路のブロック図である。
2:n進カウンタ、3:m進カウンタ、4:検査要求入
力信号、6:検査要求出力信号、8:検査終了入力信号
、9:検査要求出力信号、10:良品入力信号、12:
不良品入力信号、61〜G3:アンドゲート、OR,〜
0R3ニオアゲート。The figure is a block diagram of a chip extraction signal generation circuit for explaining one embodiment of the present invention. 2: N-ary counter, 3: M-ary counter, 4: Inspection request input signal, 6: Inspection request output signal, 8: Inspection end input signal, 9: Inspection request output signal, 10: Good product input signal, 12:
Defective product input signal, 61~G3: AND gate, OR, ~
0R3 Nioa Gate.
Claims (1)
、ウェハー上のn個のチップ毎に検査チップを抽出し、
該抽出された検査チップについて検査項目を実行して良
品信号又は不良品信号を形成し、上記良品信号が形成さ
れた状態でn個のチップ毎に検査チップの抽出を継続し
、不良品信号が形成された状態で検査チップに続く一個
のチップを連続して検査チップとすることを特徴とする
半導体ウェハーの検査方法。l) In the process of inspecting chip characteristics in a wafer state, a test chip is extracted every n chips on the wafer,
Execute the inspection items on the extracted test chips to form a non-defective signal or a defective product signal, and with the above-mentioned non-defective signal formed, continue extracting the test chips for every n chips until the defective product signal is detected. A method for inspecting a semiconductor wafer, characterized in that a single chip following a test chip in a formed state is continuously used as a test chip.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24978383A JPS60134433A (en) | 1983-12-22 | 1983-12-22 | Inspection for semiconductor wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24978383A JPS60134433A (en) | 1983-12-22 | 1983-12-22 | Inspection for semiconductor wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60134433A true JPS60134433A (en) | 1985-07-17 |
Family
ID=17198159
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24978383A Pending JPS60134433A (en) | 1983-12-22 | 1983-12-22 | Inspection for semiconductor wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60134433A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01197674A (en) * | 1988-02-03 | 1989-08-09 | Mitsubishi Electric Corp | Article inspecting method |
US4985676A (en) * | 1989-02-17 | 1991-01-15 | Tokyo Electron Limited | Method and apparatus of performing probing test for electrically and sequentially testing semiconductor device patterns |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS544078A (en) * | 1977-06-13 | 1979-01-12 | Hitachi Ltd | Inspection method of performance of circuit element |
-
1983
- 1983-12-22 JP JP24978383A patent/JPS60134433A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS544078A (en) * | 1977-06-13 | 1979-01-12 | Hitachi Ltd | Inspection method of performance of circuit element |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01197674A (en) * | 1988-02-03 | 1989-08-09 | Mitsubishi Electric Corp | Article inspecting method |
US4985676A (en) * | 1989-02-17 | 1991-01-15 | Tokyo Electron Limited | Method and apparatus of performing probing test for electrically and sequentially testing semiconductor device patterns |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3751647A (en) | Semiconductor and integrated circuit device yield modeling | |
US4875002A (en) | Method of testing semiconductor wafers | |
CN104062305B (en) | A kind of analysis method of integrated circuit defect | |
WO2022028102A1 (en) | Testing method and testing system | |
US7101722B1 (en) | In-line voltage contrast determination of tunnel oxide weakness in integrated circuit technology development | |
JPS60134433A (en) | Inspection for semiconductor wafer | |
JPH0545423A (en) | Fault analyzing method for integrated circuit | |
US6943573B1 (en) | System and method for site-to-site yield comparison while testing integrated circuit dies | |
JPH0312099A (en) | Method of testing recording element with series data transmission path | |
JP2007165930A (en) | Quality control method of electronic device and quality control system of electronic device | |
JPS6217376B2 (en) | ||
JPH08274139A (en) | Test method of semiconuctor device | |
JP3012242B2 (en) | Manufacturing method of semiconductor integrated circuit | |
US7141995B2 (en) | Semiconductor manufacturing device and semiconductor manufacturing method | |
JPS5935441A (en) | Probing device | |
JP2004266017A (en) | Method for inspecting semiconductor wafer | |
JPH10229110A (en) | Manufacture of semiconductor device and semiconductor device manufactured by the same | |
Wong | A systematic approach to identify critical yield sensitive parametric parameters | |
KR0177987B1 (en) | Multiple semiconductor chip test method | |
Sacedon et al. | Wafer level stress data successfully used as early burn-in predictor | |
JP3167916B2 (en) | Semiconductor integrated circuit | |
JPH03214081A (en) | Testing method for semiconductor integrated circuit | |
JP2867896B2 (en) | Method for manufacturing semiconductor device | |
JPS62114258A (en) | Large-scale integrated circuit | |
KR100934793B1 (en) | Semiconductor device test method and apparatus and proper stress voltage detection method |