JPS60125373A - Production of deposited film - Google Patents

Abstract

PURPOSE:To prevent deterioration in the physical characteristic of a deposited film owing to overheating of a gaseous raw material in the stage of decomposing the gaseous raw material by electric discharge and forming the deposited film on a base body by heating preliminarily the gaseous raw material to a prescribed temp. and supplying said material. CONSTITUTION:A cylindrical substrate 2 is set in a vacuum chamber 1 and the inside of the vessel is evacuated to a vacuum by an evacuating system 7. A pipe 6 for supplying a gaseous raw material is heated by a heater 8 and when a prescribed temp. is attained, the gaseous raw material heated to the prescribed temp. is supplied through the pipe 6 into the chamber 1 while a base body 2 is rotated by a rotating mechanism 9. The gaseous raw material is released from the many holes provided to the release pipe 11 in the chamber 1 toward the body 2. The high-frequency voltage from a high-frequency power source 5 is at the same time impressed between the vacuum vessel 1 as a cathode and the base body 2 of the grounded anode to generate glow discharge between both electrodes thereby decomposing the gaseous raw material and forming a deposited film on the base body 2. Since there is no heater in the chamber 1, the overheating of the gaseous raw material as a result of direct contact with the heater is obviated and the deposited film having excellent electrical properties and optical properties is obtd.

Description

Detailed Description of the Invention The present invention relates to a method for producing a deposited film, and particularly relates to a method for producing a deposited film in which a source gas is decomposed by exposure to mK and a deposited film is formed on a substrate set at a predetermined temperature. .

Recently, for the purpose of forming photoelectric conversion elements, image-forming bodies for secondary photographs, etc., a decomposable gas is introduced into a vacuum chamber and the gas is decomposed by electric discharge into the glow 11. However, methods for forming deposited films on predetermined substrates are being actively developed. Hydrogenated amorphous silicon (a-81 :
Films (abbreviated as H) have been attracting considerable attention due to their excellent electrical and optical properties, ease of fabrication into large areas, and non-polluting properties.

In the above-mentioned method for manufacturing a deposited film, it is widely known that the temperature of the substrate has a significant effect on the electrical and optical properties of the deposited ljt film. Conventionally, a predetermined substrate temperature t
In order to obtain -, a heater was installed in the deposition chamber, and the temperature of the substrate was controlled by heating the heater, but the temperature of the heater was generally higher than the crystalline temperature, and the farther apart the heater and the substrate were, the lower the temperature of the substrate. The trend was remarkable.

Especially for heater 4L<, the part that plugs the heater is
If there is a region that comes into contact with the source gas and heats the source gas to a temperature higher than the substrate temperature, the problem is that it will adversely affect the electrical and optical properties of the film deposited on the substrate. It was loud.

In consideration of the above points, the present invention provides a deposited film having good electrical and optical properties by forming the film without forming a temperature region higher than the substrate temperature in the deposition chamber. The purpose is to

The feature of the deposited film manufacturing method by Honkotsu J is that when the raw material gas is decomposed by electric discharge and a deposited film is formed on a predetermined substrate, the raw material gas introduced into the deposition chamber is divided into 8 laminated films. The substrate is preheated outside the deposition chamber to a predetermined temperature required for formation, and then introduced into the deposition chamber, and the surface temperature of the substrate is maintained at a temperature equivalent to that of the source gas, and the temperature inside the deposition chamber is higher than that of the substrate. Warm F! The object of the present invention is to form a film on the substrate without forming an L region.

The present invention will be described below with reference to the drawings.

In the following description, the present invention will mainly be explained with reference to examples of embroidery in which the base forming the stack 1jJ (ll!) is a cylindrical base for Kameko photography. It can also be used for the purpose of depositing amorphous photoreceptor films and amorphous semi-dedicated films for arithmetic elements, and can also be used to deposit amorphous photoreceptor films and amorphous semi-dedicated films for arithmetic elements. By depositing an ultra-hard film on the material, it can be used to improve wear resistance and extend life.

FIG. 1 schematically shows an example of a cylindrical plasma CVD apparatus that implements the method according to the present invention. In FIG. 1, 1 is a cylindrical cathode electrode constituting a vacuum chamber that is a deposition chamber, and 2 is an anode electrode that is a counter electrode that is arranged concentrically with the vacuum chamber so as to rotate around the central axis of the vacuum chamber. 3 is the upper and lower walls of the vacuum chamber; 4 is the wall '41: a donut-shaped insulator for insulating from the cathode electrode; 5 is a high-frequency power source;
6 is a raw material supply navy blue pipe, 7 is an exhaust system, and 8 is a source gas outside the deposition chamber at a predetermined temperature necessary for forming a deposited film (15
9 is a rotation mechanism for rotating the above-mentioned cylindrical base, IO is ground, and 11#'i is a raw material gas discharge pipe.

The operation of the above plasma CVD apparatus will be briefly explained.

First) Set a cylindrical substrate 2 in a vacuum chamber,
The inside of the chamber is evacuated by the exhaust system 7. At the same time, the raw material gas supply tube 6 is heated by the heater 8, and the base body 2 is rotated by the rotation mechanism 9. When the temperature of the raw material gas supply pipe becomes constant, the gas is supplied. The raw material gas fc is supplied from the pipe 6 into the true nitrogen chamber. The separate gas a is heated by a heater 8 to a predetermined temperature necessary for forming a deposited film 7
c By passing through the raw material supply vibro, 150℃ to 3
The temperature becomes Dr constant within the range of 50° C., and the raw material gas is discharged toward the base body 2 from a large number of gas discharge holes fc provided in the raw material gas discharge v11. While the gas was stably supplied and condensed in the vacuum chamber and the temperature of the base cylinder was kept constant, an island frequency voltage of 13.56 P/iHt was applied to the cathode electrode 1 by the city frequency voltage source 5. , a glow discharge is generated between the grounded substrates 2, one gas molecule is decomposed and deposited on the substrate, and a deposited film, for example an amorphous silicon film, is formed on the substrate 2.

As an example of the manufacturing method according to the present invention, a photosensitive drum for photosensitive photography was manufactured by this method. The production disputes at this time are shown in Table 1.

The electrophotographic photosensitive drum thus obtained was placed in a charging, exposing and developing device, corona charging was performed at 5 kV for Q, 2 seconds, and a light image was immediately irradiated. A tungsten lung was used as a light source, and a light intensity of 1.06 ux-IIeC was irradiated using a transmission type test chart. Immediately thereafter, a good toner image was obtained on the surface of the photosensitive drum by cascading an e-chargeable developer (containing toner and carrier) onto the surface of the member.

The toner image thus obtained was once cleaned with a rubber tilter, and the image forming and cleaning process was repeated again. No deterioration of the image was observed even after repeating the test over 100,000 times.

FIG. 2 shows another example of a cylindrical plasma CVD apparatus used to carry out the method of the invention. This example has a construction basically similar to the device shown in FIG. Therefore, each part will be designated by the same reference numerals as in FIG. 1, and detailed explanation thereof will be omitted.

The major difference between the device shown in FIG. 2 and the device shown in FIG.
The point is that the gas release hole is directed to the white flaw on the base. According to this method, the raw material (stator) and its decomposition causes the particles and ions to collide with the surface of the film that is being deposited on the cylindrical substrate, causing their molecules, radicals, ions, etc. to become unbonded. The film can be deposited without causing any negative effects such as run-in.

An electrophotographic photosensitive drum was produced using the apparatus shown in FIG. 2 and following the same procedure as the apparatus shown in FIG. Table 2 shows the IA conditions for cultivation at the time of jin. When the thus obtained drum-free drum was evaluated in the same manner as described above, good results were obtained.

1 Second ceremony

[Brief explanation of drawings]

Fig. g1 shows a schematic diagram of a manufacturing apparatus for carrying out the manufacturing method of the present invention. Further, FIG. 2 shows a schematic diagram of a manufacturing apparatus used in the second embodiment. l...Cathode electrode, 2...Substrate (anode electrode)
, 3... *Walls of all chambers, 4... Insulating insulators, 5... Surface circumference I & power supply, 6...
- Raw material gas supply lees I♀INO, 7... Exhaust system, 8... Heater, 9... Rotating mechanism, 10... Earth, 11... Raw material gas discharge pipe.

Claims (1)

[Claims] When the raw material gas is decomposed by electric discharge and a deposited film is formed on a predetermined substrate, the raw material gas that enters one deposition chamber is heated outside the deposition chamber in advance to a predetermined temperature necessary for forming the deposited film. , the substrate is introduced into a deposition chamber, the surface temperature of the substrate is maintained at a temperature equivalent to the temperature of the source gas, and a film is formed on the substrate without forming a temperature region lower than that of the substrate in the deposition chamber. A deposited film manufacturing method characterized by: