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JPS60101743A - Photomagnetic recording medium - Google Patents

Photomagnetic recording medium

Info

Publication number
JPS60101743A
JPS60101743A JP20795983A JP20795983A JPS60101743A JP S60101743 A JPS60101743 A JP S60101743A JP 20795983 A JP20795983 A JP 20795983A JP 20795983 A JP20795983 A JP 20795983A JP S60101743 A JPS60101743 A JP S60101743A
Authority
JP
Japan
Prior art keywords
recording medium
target
magneto
optical recording
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20795983A
Other languages
Japanese (ja)
Inventor
Takashi Yamada
隆 山田
Hisao Arimune
久雄 有宗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP20795983A priority Critical patent/JPS60101743A/en
Publication of JPS60101743A publication Critical patent/JPS60101743A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/10Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
    • G11B11/105Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/10Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
    • G11B11/105Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing
    • G11B11/10582Record carriers characterised by the selection of the material or by the structure or form
    • G11B11/10586Record carriers characterised by the selection of the material or by the structure or form characterised by the selection of the material

Landscapes

  • Thin Magnetic Films (AREA)

Abstract

PURPOSE:To obtain a photomagnetic recording medium having both improved Kerr rotating angle and S/N ratio by forming a thin 4-components amorphous alloy of Gd-Tb-Sm-Fe having the axis of easy magnetization in the direction perpendicular to the film plane on a base plate. CONSTITUTION:Respective components are sputtered onto a base plate 4 through circular through-holes 6, 6 provided to a disc-shaped shielding plate 5 from the 1st target 2 consisting of, for example, Gd, Tb and Fe and the 2nd target 2 consisting of Sm by using a magnetron sputtering device to form a thin quaternary amorphous alloy film of Gd-Tb-Sm-Fe contg. 10-40atom% rare earth metal including Gd, Tb and Sm and contg. Sm in the rare earth metal at <=65atom% and not zero on the surface of a base 5, thereby forming the photomagnetic recording medium having the axis of easy magnetization in the direction perpendicular to the surface of the base. The Kerr rotating angle is thus increased and S/N is improved and the above-mentioned medium is produced with good productivity.

Description

【発明の詳細な説明】 本発明ハ(+d −Tt) −Sm −Fe四7e系非
晶質合金から成る光磁気記録媒体に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magneto-optical recording medium made of an a(+d-Tt)-Sm-Fe47e amorphous alloy.

近年、大量の情報を高密度に記録するため、レーザー光
を投光して記録媒体を局部加熱することによりビットを
書き込み、磁気光学効果を利用して読み出すという光磁
気記録が研究開発されている。その記録媒体に希土類−
遷移金属から成る非晶質膜があり、量産に適し且つ読み
出しにノイズが少ないなどの利点を有し、非常に注目さ
れている。
In recent years, in order to record large amounts of information at high density, magneto-optical recording has been researched and developed, in which bits are written by projecting a laser beam to locally heat the recording medium and read out using the magneto-optic effect. . Rare earths are used in the recording medium.
There is an amorphous film made of a transition metal, which is attracting a lot of attention because it is suitable for mass production and has advantages such as low readout noise.

かような非晶質膜の先行技術として特開昭56−126
907号IコG′i−Tb −Fe E7G糸合金薄膜
カ提案されており、記録特性に優れたTb Feと、再
生特性においてカー回転角が大きいGdFeの両者の特
性が生かされているが、実用上、未だ満足のいくカー回
転角が得られておらず、その特性の向上が、更に、一層
望まれている。
As a prior art of such an amorphous film, Japanese Patent Application Laid-Open No. 126-1983
No. 907 I-G'i-Tb-Fe E7G thread alloy thin film has been proposed, which takes advantage of the characteristics of both Tb-Fe, which has excellent recording characteristics, and GdFe, which has a large Kerr rotation angle in reproduction characteristics. In practical terms, a satisfactory Kerr rotation angle has not yet been obtained, and there is an even greater desire to improve its characteristics.

そこで、本発明者等は上記事情に鑑み、鋭意研究に努め
た結果、160℃前後にキューリ一点を有するG6−−
Tb −Fe三元系合金薄膜にSmを添加することによ
ってカー回転角が改善されることを見い出した。
Therefore, in view of the above circumstances, the inventors of the present invention, as a result of diligent research, found that G6-- which has one cucumber point around 160 degrees Celsius.
It has been found that the Kerr rotation angle can be improved by adding Sm to the Tb-Fe ternary alloy thin film.

本発明は上記知見lこ基づき完成されたもので、GCI
 −Tb −Fe三元系合金薄膜をもとにして、更にカ
ー回転角を向上させてS/N比を良クシ、侵れた再生特
性を具備した光磁気記録媒体を提供することシこある。
The present invention was completed based on the above findings, and is based on the GCI
It is possible to provide a magneto-optical recording medium based on a -Tb-Fe ternary alloy thin film that further improves the Kerr rotation angle, improves the S/N ratio, and has improved reproduction characteristics. .

本発明の要旨は、膜面と垂直な方向に磁化容易軸を有す
る0α−Tb −Sm −Fe四元系非晶質合金薄膜か
ら成ることを特徴とする光磁気記録媒体を提供すること
にある。
The gist of the present invention is to provide a magneto-optical recording medium comprising a 0α-Tb-Sm-Fe quaternary amorphous alloy thin film having an axis of easy magnetization in a direction perpendicular to the film surface. .

以下、本発明の詳細な説明する。The present invention will be explained in detail below.

本発明によれば、基板上に鏡面と垂直な方向に磁化容易
軸を有するOd −Tb −Sm −Fe四元系非晶質
合金薄膜(以下、Qd −Tb −Sm −re合金薄
膜と略す)を形成した光磁気記録媒体Iこついて、後述
のマグネトリンスバッタリング法によって種々の条件を
設定することにより、優れたカー回転角を具j6ii 
した光磁気記録媒体が得られる。かようfz Gi −
Th−3m −F’e合金合金Iコとって、Ga−Tb
及びSmを含む希土類金属がlθ〜40 atomic
%含有していることが必要であり、この範囲から外れる
と非晶質垂直磁化膜の形成が置部となって、カー回転角
が小さくなると共に、角形比及び保持力も劣化し、望ま
しくは、15〜ao atomic%の範囲膠こ設定す
るのがよい。
According to the present invention, an Od-Tb-Sm-Fe quaternary amorphous alloy thin film (hereinafter abbreviated as Qd-Tb-Sm-re alloy thin film) having an axis of easy magnetization in a direction perpendicular to the mirror surface is formed on a substrate. By setting various conditions using the magneto-optical recording medium I which will be described later, an excellent Kerr rotation angle can be achieved.
A magneto-optical recording medium is obtained. Kayo fz Gi −
Take Th-3m -F'e alloy alloy I, Ga-Tb
and rare earth metals containing Sm are lθ~40 atomic
%, and if it deviates from this range, the formation of an amorphous perpendicularly magnetized film will become a problem, the Kerr rotation angle will become small, and the squareness ratio and coercive force will also deteriorate. It is preferable to set the glue in the range of 15 to ao atomic%.

更に、本発明によれば、前記のように希土類元素の範囲
を設定するのに加え、この希土類元素中のSmを65 
atomxc%以下(0を含まない)含有していること
が重要であり、65 atomic%を越えると、カー
回転角の改善がなされないばかりか、角形比及び保持力
も劣化し、好適には、希土類元素中、Smを5〜25 
atomic%の範囲になるように含有させるとよい。
Furthermore, according to the present invention, in addition to setting the range of rare earth elements as described above, Sm in this rare earth element is set to 65
It is important that the content be less than 65 atomic% (not including 0); if it exceeds 65 atomic%, not only will the Kerr rotation angle not be improved, but the squareness ratio and holding force will also deteriorate. Among the elements, Sm is 5 to 25
It is preferable to contain it in a range of atomic%.

次に、上記した本発明光磁気記録媒体の製法を、図によ
り説明する。
Next, a method for manufacturing the above-mentioned magneto-optical recording medium of the present invention will be explained with reference to the drawings.

図は(A −Tb −Sm −Fe合金薄膜を生成する
ためのマグネトロンスパッタリング装置であり、図中、
真空槽(1)ノ内部には、Gd、 Tb、 Feから成
る第1ターゲツト<21.8mから成る第2ターゲツト
(31、回転駆動されるとともにGA −Tb −Sm
 −Fe合金薄膜が形成される円板状の基板(41、及
び回転自在の円板状遮蔽板(5)が配置されている。
The figure shows a magnetron sputtering apparatus for producing an A-Tb-Sm-Fe alloy thin film;
Inside the vacuum chamber (1), a first target (31) consisting of Gd, Tb, and Fe and a second target (31) having a length of <21.8 m is provided.
A disk-shaped substrate (41) on which a -Fe alloy thin film is formed, and a rotatable disk-shaped shielding plate (5) are arranged.

前記遮蔽板(5)Iこは第1.2ターゲツト(2113
1のそれぞれの真上に一対の円状貫通孔(6)が形成さ
れており、成膜中には第1.2ターゲツ) +21 +
31から飛散した各種金属がこのyt連通孔6)を通過
し、回転する基板f’1l−1に蒸着されるが、プレス
パツタ時には、前記遮蔽板(5)を約90°回転させる
ことにより、第1.2クーゲツl−(21(31から飛
散した金属は遮蔽板(5)Iこより遮蔽され、基板(4
)上には蒸着されないようIこなっている。
The shielding plate (5) I is the 1st and 2nd target (2113
A pair of circular through holes (6) are formed right above each of the targets 1 and 2 during film formation.
Various metals scattered from the YT communication hole 6) pass through the YT communication hole 6) and are deposited on the rotating substrate f'1l-1. 1.2 Kuugetsu l-(21
) is coated on top to prevent vapor deposition.

第1ターゲツト(2)と基板(4)、並びに第2ターゲ
ット(3)とノ、(板(4)の間多こは、それぞれ高周
波電源(7)(8)Iこより高周波V1工圧が印加され
るとともに、基板(40こ対し′C正もしくは負のバイ
アス電圧を印加することができるように1r[流電源(
9)が付設しである。
A high frequency V1 working pressure is applied between the first target (2) and the substrate (4), and between the second target (3) and the plate (4) from the high frequency power supply (7) (8), respectively. At the same time, a 1r [current power source (
9) is attached.

このffl、2ターゲツトT21 (3+の下側lこは
、プレーナーマグネトロン型カソード1こ基づき、アル
ニコ、フグライト、サマリウムコバルト製の永久磁石(
101fl lがf(iiえつけられ、これにより電場
と磁場の直交するペニング放電現象を利用して放電ガス
分子のイオン化効率か高められ、量産昏こ適した高速成
膜がnf能となる。
This ffl, 2 targets T21 (3+ lower side is based on 1 planar magnetron type cathode, permanent magnet made of alnico, fugulite, samarium cobalt (
101 fl l is attached to f (ii), thereby increasing the ionization efficiency of discharge gas molecules by utilizing the Penning discharge phenomenon in which the electric field and magnetic field are orthogonal, and high-speed film formation suitable for mass production becomes nf capability.

本発明において使用されるCM 、 Tb 、 Smか
ら成る第1ターゲツト(2)は、例えば、Fe製円板の
1曝こ角形状のG(11[チップ及びT’b製チップを
適当な数だけ載置して構成されるが、 TI)製円板の
上にG1製チップ及びFe%チップを載置したもの、或
いはGd製円板の1にTb[チップ及びFe製チップを
載置したものであってもよく、更1こ、かようなチップ
の形状を角形状に代えて扇形状等任意の形状に変更して
もよいっこの他、第1ターゲツト(2)をGCI −T
h −Sm合金から成る円板により構成しても同等の効
果が達成される。
The first target (2) composed of CM, Tb, and Sm used in the present invention is, for example, made of a circular plate made of Fe in the shape of a rectangular G (11[chip] and an appropriate number of T'b chips). It is constructed by placing a G1 chip and a Fe% chip on a TI) disc, or a Tb chip and an Fe chip on a Gd disc. In addition, the shape of the chip may be changed to any shape such as a fan shape instead of a square shape.
The same effect can be achieved by using a disc made of an h-Sm alloy.

次に、上記のマグネトロンスパッタリング装置の操作を
説明する。先ず、真空槽(1)が約I X 10TOr
r以下まで真空引きされた後、その内部に高純度のAr
ガス及び/又はN9ガスを、或いは必要に応じ垂直磁気
異方性エネルギの大きさを制御するためN2ガスを混合
して導入しく以下、これら導入ガスを雰囲気ガスと略す
)、真空槽(1)内部を所定のガス圧に保持する。引続
いて遮蔽板(5)を約90°回転させ、基板(4)を遮
蔽した状態で第1.2ターゲツト(21+31をプレス
パツタし、それぞれのり−ゲット表面の酸化物層などを
エツチングする。
Next, the operation of the above magnetron sputtering apparatus will be explained. First, the vacuum chamber (1) is approximately I x 10 Torr.
After being evacuated to below r, high-purity Ar is placed inside.
gas and/or N9 gas, or a mixture of N2 gas and N2 gas to control the magnitude of perpendicular magnetic anisotropy energy as necessary (hereinafter, these introduced gases are abbreviated as atmospheric gas), vacuum chamber (1) The interior is maintained at a predetermined gas pressure. Subsequently, the shield plate (5) is rotated about 90 degrees, and the first and second targets (21+31) are press-sputtered with the substrate (4) shielded, thereby etching the oxide layer on the surface of each glue target.

その後、一対の貫通孔(6)をそれぞれの第1.2ター
ゲツ) f2) +31の真上へくるように遮蔽板(5
)を回転、配置する。次いで、適当な成膜速度となるよ
うに所定の基板回転数と高周波電力をセットして、所定
時間、第1.2ターゲツト(21+3目こ対し同時放電
させる。これにより、雰囲気ガスがプラズマとなり、そ
の正イオンが第1.2ターゲツト+21 +31を叩き
つり、放出した各種ターゲット材料が基板(4)上に蒸
着される。
After that, insert the pair of through holes (6) into the shield plate (5) so that they are directly above the 1.2nd target (f2) +31.
) to rotate and place. Next, a predetermined substrate rotation speed and high frequency power are set to obtain an appropriate film formation rate, and simultaneous discharge is performed on the 1st and 2nd targets (21+3 targets) for a predetermined time. As a result, the atmospheric gas becomes plasma, The positive ions hit the 1.2 targets +21 +31, and various target materials released are deposited on the substrate (4).

本発明1こおいては、カー回転角が大きく、且つ高保持
ツへ角形比にも優れた好適な光磁気記録媒体を得るため
に、必要に応じて基板(4)に対して正もしくは負のバ
イアス電圧を印加すると共に、雰囲気ガス圧を所定の範
囲に設定するのがよく、雰3 囲気ガス圧がl X 10 Torr未満では安定な放
電状態が得られず、成膜が困難と々す、50 X 1O
−8Torrを越えると、磁性薄膜中lこ含まれるアル
ゴン(Ar )や・窒::i (N+、並びに酸素(0
)が増加して膜特性が劣化し、大きなカー回転角や大き
な保磁力を得ることがむずかしくなるため、l X t
oe 50X 10 TOrr 、好適には3 X 1
0 〜20 X 10 カテの範囲に設定される。
In the present invention 1, in order to obtain a suitable magneto-optical recording medium having a large Kerr rotation angle, high retention, and excellent squareness ratio, it is necessary to apply a positive or negative polarity to the substrate (4). It is better to apply a bias voltage of 3 and set the atmospheric gas pressure within a predetermined range; if the atmospheric gas pressure is less than 1 x 10 Torr, a stable discharge state cannot be obtained and film formation may be difficult. , 50 x 1O
When the temperature exceeds −8 Torr, the magnetic thin film contains argon (Ar), nitrogen (N+), and oxygen (0
) increases and the film properties deteriorate, making it difficult to obtain a large Kerr rotation angle and a large coercive force.
oe 50X 10 TOrr, preferably 3X1
It is set in the range of 0 to 20 x 10 categories.

Gd −Tb −Sm −Co合金薄膜の成膜速度は基
板(4)の回転速度に依存するが、本発明においては基
なるように基板の回転速度が設定される。尚、0.1A
/回転未満では不純物が導入されやすくなるために垂直
磁化膜の形成が困難となり、30A/回転を越えても垂
直磁化膜を形成するのが困難となる。
The deposition rate of the Gd-Tb-Sm-Co alloy thin film depends on the rotational speed of the substrate (4), but in the present invention, the rotational speed of the substrate is set as a basis. In addition, 0.1A
If it is less than 30 A/rotation, it becomes difficult to form a perpendicularly magnetized film because impurities are easily introduced, and even if it exceeds 30 A/revolution, it becomes difficult to form a perpendicularly magnetized film.

成膜中の基板(4)の温度は200℃以下に設定される
。200℃を越えると非晶質構造の緩和がみられ、保磁
力の大きな膜を製作するのが困難である。
The temperature of the substrate (4) during film formation is set to 200° C. or lower. When the temperature exceeds 200° C., relaxation of the amorphous structure is observed, making it difficult to produce a film with a large coercive force.

また、成膜中には、第1ターゲツト(2)と基板(4)
の間1こ100W〜5 kWの高周波電力が印加される
とともに、第2ターゲツト(3)と基板(4)の間にも
Smが所定量含有されるように適当な大きさの高周波電
力が印加される。
Also, during film formation, the first target (2) and the substrate (4)
A high frequency power of 100 W to 5 kW is applied for one moment, and high frequency power of an appropriate magnitude is also applied so that a predetermined amount of Sm is contained between the second target (3) and the substrate (4). be done.

カ<シて上記複合ターゲットをプレスパツタした後、バ
イアス電圧の印加とともに、雰囲気ガスの圧力、基板温
度、高周波電力などをそれぞれ所定範囲内に設定するこ
とにより、基板上1こ特有の非晶質形態を成した06−
 Tb −Sm −Fe合金薄膜と成り得、かかる条件
により製作されたaa −Tb−Sm −Fe合金薄膜
はカー回転角が大きいため、優れた再生特性を具備した
光磁気記録媒体が提供できる。
After pressing and sputtering the composite target, applying a bias voltage and setting the atmospheric gas pressure, substrate temperature, high frequency power, etc. within predetermined ranges, the unique amorphous morphology of the substrate can be formed. 06-
Since the aa-Tb-Sm-Fe alloy thin film produced under these conditions has a large Kerr rotation angle, a magneto-optical recording medium with excellent reproduction characteristics can be provided.

次に、本発明の実施例について述べる。Next, examples of the present invention will be described.

〔実施例〕〔Example〕

上述した図に示ずマグネトロンスパッタリング装置を使
用し、第1ターゲツト(2)としては、眼側円板の上l
こGd 1Jt9角形チツプ°及びTb[角形チップが
M IF?されlζもの、第2ターゲツト(3)として
はanq+!!円板を用いた。
A magnetron sputtering device (not shown in the above figure) is used, and the first target (2) is the upper part of the ocular disc.
Gd 1Jt9 square chip° and Tb [square chip is MIF? The second target (3) is anq+! ! A disk was used.

真空イv’+ ft+内のガス圧はArガス圧7 X 
1O−3TOrrに設定され、プレスパツタ後、基板+
41 ヲ50 rpm テで回転し、爪板(4)に対し
てバイアス電圧を印加しながら、第1ターゲツト(2旨
こ実効の高周波電力400Wを印加し、第2クーゲツト
(3)に印加される実効の高周波電力を零から大きくす
ることによって、第1表に示ず通り、順次、Smの含有
量が大きくなったGd −Tb −Sm −Fe合金薄
膜を基板(4)上に形成した。尚、本実施例で得られた
Gd −Tb −Sm−Fe合金薄膜をX線回折及びト
ルクメーターこより測定したところ、それぞれ非晶質及
び垂直磁化膜となっていることが確かめられた。
The gas pressure in the vacuum i v'+ ft+ is Ar gas pressure 7
It was set to 1O-3TOrr, and after press sputtering, the board +
41. While rotating at 50 rpm and applying a bias voltage to the claw plate (4), an effective high frequency power of 400 W is applied to the first target (2), which is applied to the second target (3). By increasing the effective high-frequency power from zero, Gd-Tb-Sm-Fe alloy thin films with increasing Sm content were formed on the substrate (4) as shown in Table 1. When the Gd-Tb-Sm-Fe alloy thin film obtained in this example was measured using X-ray diffraction and a torque meter, it was confirmed that the film was amorphous and perpendicularly magnetized, respectively.

かくして得られたGd −Tb −Sm −Fe合金薄
膜によれば、第2ターゲツト(3)にSmを用いないこ
とにより、G(1、Tb 、 Feの組成比が決められ
るため、ICP発光分光分析によると、いずれの蒲−T
b −Sm −Fe合金薄膜も(Gdbo T’bbo
 )!!6Fe7+であることが確認でき、かかる組成
にもとづいて、Gd −T’b −Sm −Fe合金薄
膜のカー回転角を日本分光(株)製カー回転角測定装置
により測定したところ、第1表1こ示す結果となった。
According to the Gd-Tb-Sm-Fe alloy thin film obtained in this way, the composition ratio of G(1, Tb, and Fe can be determined by not using Sm as the second target (3), so that ICP emission spectroscopy is possible. According to, which kama-T
b -Sm-Fe alloy thin film (Gdbo T'bbo
)! ! 6Fe7+, and based on this composition, the Kerr rotation angle of the Gd-T'b-Sm-Fe alloy thin film was measured using a Kerr rotation angle measurement device manufactured by JASCO Corporation. This is the result.

尚、第1表中。In addition, in Table 1.

語−Tb −Sm −Fe合金薄膜中のSm含有量は、
これをXとした場合、Smx ((Gd+)o Tbb
o )26 Fe741Too−Xと表わすことができ
る。
The Sm content in the word-Tb-Sm-Fe alloy thin film is
If this is X, Smx ((Gd+)o Tbb
o)26Fe741Too-X.

第 1 表 ・叩は本発明の範囲外のものである 第1表中、試料番号lは先に提案された()C1−TI
)−Fe合合金ル々を示し、 このカー回転角に比べて
、本発明の試料番号2〜6では一層大きくなっているこ
とが判る。
In Table 1, sample number l is outside the scope of the present invention.
)-Fe alloys, and it can be seen that the Kerr rotation angles are even larger for samples Nos. 2 to 6 of the present invention compared to this Kerr rotation angle.

上述の実施例から明らかなように、本発明の光磁気記録
uす2体薯こよれば、 Gd −Tb −Fe三元系非
晶質合金薄膜にSnlを所定量添加すること昏こよりカ
ー回転角が大きくなり、一段とSハ比が向上し、優れた
再生特性を有した光磁気記録媒体が提供できる。
As is clear from the above embodiments, according to the two embodiments of the magneto-optical recording device of the present invention, Kerr rotation is achieved by adding a predetermined amount of Snl to a Gd-Tb-Fe ternary amorphous alloy thin film. It is possible to provide a magneto-optical recording medium with a larger angle, a further improved S/R ratio, and excellent reproduction characteristics.

更に、カー回転角が向上するに伴ってキューリ一点が上
昇する傾向にあるが、本発明の光磁気記録媒体は、もと
もと比較的低いキューリ一点の語−Tb −Fe合金を
用いているため、カー回転角の向上に伴ってキューリ一
点が上昇しても、半導体レーザを投光源にする場合、何
ら実用上支障のない範囲内1こキューリ一点を制御でき
る。これにより、キューリ一点の上昇に起因して多層膜
構造の記録媒体にする必要がなく、本発明の光磁気記録
媒体を単層膜構造にして記録再生に使うことが可能であ
り、製造工程の簡略化がはかられる。
Furthermore, as the Kerr rotation angle increases, the Curie point tends to rise, but since the magneto-optical recording medium of the present invention uses a -Tb-Fe alloy with a relatively low Curie point, the Curie point tends to increase. Even if the Curie point increases as the rotation angle increases, if a semiconductor laser is used as the light projection source, the Curie point can be controlled within a range that does not cause any practical problems. As a result, there is no need to use a multi-layered recording medium due to the increase in Curie point, and the magneto-optical recording medium of the present invention can be used for recording and reproduction with a single-layered structure, and the manufacturing process can be improved. Simplification is possible.

【図面の簡単な説明】[Brief explanation of the drawing]

図は光磁気記録媒体を生成するためのマグネトロンスパ
ッタリング装置の概略図である。 (2)・・・第1ターゲツト、(31−・・第2ターゲ
ツト、;4)・・・基板、(71、+81−・・高周波
電源、19)−・・直流電源特許出願人 京セ ラ株式
会社 手−続補正書 (自発) 昭和58年12月 70 1、事件の表示 昭和58年持重願第207cI159
号2、発明の名称 光磁気記録媒体 5、補正の対象 願1及び明細書 6.7+Ii正の内容 別紙のとおり、タイプ印書によ
る願書および明細書
The figure is a schematic diagram of a magnetron sputtering apparatus for producing magneto-optical recording media. (2)...First target, (31-...Second target, ;4)...Substrate, (71, +81-...High frequency power supply, 19)-...DC power supply Patent applicant Kyocera Co., Ltd. Procedural Amendment (Voluntary) December 1981 70 1. Indication of the case 1981 P.C.I.P. 207cI159
No. 2, Title of the invention Magneto-optical recording medium 5, Subject of amendment Application 1 and specification 6.7 + Ii Correct content As attached, typed application and specification

Claims (1)

【特許請求の範囲】 (1)III″!而と垂直な方向に磁化容易軸を有する
Gd−Tb −Sm −Fe四元糸非晶質合金薄膜から
成ることを特徴とする光磁気記録媒体。 (21nil記(jd −Tl) −Sm −Fe四元
糸非晶質合金薄膜が、(kl、 、 ’J、’b及びS
inを含む希土類金属を10〜40 atomic%含
有しCいることを特徴とする特許請求の範囲第1項記載
の光磁気記録媒体。 (3) 前記希土類金属中、Smを65 atomic
%以下(0を含まない)含有していることを特徴とする
特許請求の範囲第2項記戦の光磁気記録媒体。
[Scope of Claims] (1) A magneto-optical recording medium comprising a Gd-Tb-Sm-Fe quaternary amorphous alloy thin film having an axis of easy magnetization in a direction perpendicular to III''! (21nil (jd -Tl) -Sm -Fe quaternary thread amorphous alloy thin film is (kl, , 'J, 'b and S
2. The magneto-optical recording medium according to claim 1, wherein the magneto-optical recording medium contains 10 to 40 atomic% of a rare earth metal containing C. (3) Among the rare earth metals, Sm is 65 atomic
% or less (not including 0) of the magneto-optical recording medium according to claim 2.
JP20795983A 1983-11-05 1983-11-05 Photomagnetic recording medium Pending JPS60101743A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20795983A JPS60101743A (en) 1983-11-05 1983-11-05 Photomagnetic recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20795983A JPS60101743A (en) 1983-11-05 1983-11-05 Photomagnetic recording medium

Publications (1)

Publication Number Publication Date
JPS60101743A true JPS60101743A (en) 1985-06-05

Family

ID=16548357

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20795983A Pending JPS60101743A (en) 1983-11-05 1983-11-05 Photomagnetic recording medium

Country Status (1)

Country Link
JP (1) JPS60101743A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6212941A (en) * 1985-07-09 1987-01-21 Seiko Epson Corp Photomagnetic recording medium

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6212941A (en) * 1985-07-09 1987-01-21 Seiko Epson Corp Photomagnetic recording medium
JPH0470705B2 (en) * 1985-07-09 1992-11-11 Seiko Epson Corp

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