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JPS6482610A - Method of treating chamfered part of wafer - Google Patents

Method of treating chamfered part of wafer

Info

Publication number
JPS6482610A
JPS6482610A JP24171587A JP24171587A JPS6482610A JP S6482610 A JPS6482610 A JP S6482610A JP 24171587 A JP24171587 A JP 24171587A JP 24171587 A JP24171587 A JP 24171587A JP S6482610 A JPS6482610 A JP S6482610A
Authority
JP
Japan
Prior art keywords
wafer
boundaries
molten
chipping
irradiated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24171587A
Other languages
Japanese (ja)
Inventor
Sadahiro Kishii
Tetsuo Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP24171587A priority Critical patent/JPS6482610A/en
Publication of JPS6482610A publication Critical patent/JPS6482610A/en
Pending legal-status Critical Current

Links

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PURPOSE:To reduce surface roughness on boundaries between chamfered surfaces and flat surfaces on the periphery of a wafer and to decrease chipping therein, by applying energy beams to the boundaries to melt the surfaces thereof. CONSTITUTION:A wafer W is attached to a chucking state 1. While the wafer is rotated, energy beams from argon lasers 2 for example are applied to boundaries P. The laser beams are radiated continuously under the exemplary conditions as follows: diameter of radiated beam of+mumphi, output of 10 watts and scanning rate of 5-10cm/second. Thereby, the temperature of irradiated points is increased and the irradiated surfaces are molten. Thus, the boundaries P between flat surfaces S and chamfered surfaces C are molten to provide smooth faces. No chipping is caused in such smooth faces.
JP24171587A 1987-09-25 1987-09-25 Method of treating chamfered part of wafer Pending JPS6482610A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24171587A JPS6482610A (en) 1987-09-25 1987-09-25 Method of treating chamfered part of wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24171587A JPS6482610A (en) 1987-09-25 1987-09-25 Method of treating chamfered part of wafer

Publications (1)

Publication Number Publication Date
JPS6482610A true JPS6482610A (en) 1989-03-28

Family

ID=17078458

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24171587A Pending JPS6482610A (en) 1987-09-25 1987-09-25 Method of treating chamfered part of wafer

Country Status (1)

Country Link
JP (1) JPS6482610A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003023836A1 (en) * 2001-09-10 2003-03-20 Mitsubishi Denki Kabushiki Kaisha Apparatus for repairing defect of substrate
KR100415755B1 (en) * 2001-07-11 2004-01-24 주식회사 한택 Method of fabricating semiconductor device using laser
JP2007245235A (en) * 2006-02-14 2007-09-27 Shibaura Mechatronics Corp Laser machining apparatus and laser machining method
US20180059454A1 (en) * 2016-08-30 2018-03-01 Samsung Display Co., Ltd. Cover window, display device including a cover window, and method of manufacturing a cover window
WO2023189176A1 (en) * 2022-03-31 2023-10-05 日本碍子株式会社 Temporary fixed substrate, method of manufacturing temporary fixed substrate, and temporary fixing method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100415755B1 (en) * 2001-07-11 2004-01-24 주식회사 한택 Method of fabricating semiconductor device using laser
WO2003023836A1 (en) * 2001-09-10 2003-03-20 Mitsubishi Denki Kabushiki Kaisha Apparatus for repairing defect of substrate
JP2007245235A (en) * 2006-02-14 2007-09-27 Shibaura Mechatronics Corp Laser machining apparatus and laser machining method
US20180059454A1 (en) * 2016-08-30 2018-03-01 Samsung Display Co., Ltd. Cover window, display device including a cover window, and method of manufacturing a cover window
WO2023189176A1 (en) * 2022-03-31 2023-10-05 日本碍子株式会社 Temporary fixed substrate, method of manufacturing temporary fixed substrate, and temporary fixing method

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