JPS6476764A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6476764A JPS6476764A JP23232287A JP23232287A JPS6476764A JP S6476764 A JPS6476764 A JP S6476764A JP 23232287 A JP23232287 A JP 23232287A JP 23232287 A JP23232287 A JP 23232287A JP S6476764 A JPS6476764 A JP S6476764A
- Authority
- JP
- Japan
- Prior art keywords
- implanted
- ion
- manufacturing
- trenches
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To enable manufacturing a bipolar transistor without epitaxial growth process in the course of manufacturing, by implanting ion from the bottom surface of a trench formed to a required depth from the upper surface of a semiconductor substrate, and forming a buried layer of impurity by annealing. CONSTITUTION:A plurarity of deep trenches of cylindrical shape are formed, by etching a silicon substrate 1 by using a photo resist 2 as a mask. When arsenic ion is implanted vertically to the substrate through the trenches 3, the ion is implanted only in bottom parts of the trenches 3. After the photo resist 2 used for forming the trench is eliminated, phosphorus ion is implanted at an angle with respect to the substrate. As a result, the arsenic ion is implanted in the surface of the silicon substrate 1 and the side surfaces of the trenches 3. By annealing treatment. the arsenic ion implanted part is formed as an N+ buried layer 4, and the phosphorus ion implanted part is formed as an N- collector layer 5, on account of diffusion rate difference. During the manufacturing process of bipolar transistor, epitaxial growth is unnecessitated, so that the manufacturing is facilitated, and the manufacturing term can be reduced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23232287A JPS6476764A (en) | 1987-09-18 | 1987-09-18 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23232287A JPS6476764A (en) | 1987-09-18 | 1987-09-18 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6476764A true JPS6476764A (en) | 1989-03-22 |
| JPH0581173B2 JPH0581173B2 (en) | 1993-11-11 |
Family
ID=16937383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23232287A Granted JPS6476764A (en) | 1987-09-18 | 1987-09-18 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6476764A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010007559A1 (en) * | 2008-07-14 | 2010-01-21 | Nxp B.V. | A transistor device and a method of manufacturing the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60150643A (en) * | 1984-01-18 | 1985-08-08 | Toshiba Corp | Complementary semiconductor device and manufacture thereof |
-
1987
- 1987-09-18 JP JP23232287A patent/JPS6476764A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60150643A (en) * | 1984-01-18 | 1985-08-08 | Toshiba Corp | Complementary semiconductor device and manufacture thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010007559A1 (en) * | 2008-07-14 | 2010-01-21 | Nxp B.V. | A transistor device and a method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0581173B2 (en) | 1993-11-11 |
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