JPS6476737A - Manufacture of semiconductor integrated circuit device - Google Patents
Manufacture of semiconductor integrated circuit deviceInfo
- Publication number
- JPS6476737A JPS6476737A JP23231887A JP23231887A JPS6476737A JP S6476737 A JPS6476737 A JP S6476737A JP 23231887 A JP23231887 A JP 23231887A JP 23231887 A JP23231887 A JP 23231887A JP S6476737 A JPS6476737 A JP S6476737A
- Authority
- JP
- Japan
- Prior art keywords
- silicide
- silicon
- silicon oxide
- implanted
- activated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To prevent the surface of a silicide from roughing or exfoliating and to improved the yield of manufacturing it by irradiating the silicide with a light of a halogen lamp or a laser beam for a short time to heat-treating it, and recrystallizing the surface of the silicide by heat treatment. CONSTITUTION:A silicon oxide film 2 is formed on a p-type silicon substrate 1, a phosphorus-doped polycrystalline silicon 3 and molybdenum silicide 4 are sequentially laminated, and a polyside gate electrode of 2-layer structure of the polycrystalline silicon and the silicon is formed. With the polyside gate electrode as a mask phosphorus ions are implanted and activated to form an n<-> type diffused layer 5. Thereafter, it is covered with a silicon oxide film 6 formed by vapor growth. Then, the film 6 is etched, and a sidewall 6A is formed. The silicide 4 is irradiated with the light of a halogen lamp in an oxygen atmosphere, and thermally annealed (RTA method). Thermal silicon oxide films 7A, 7 are formed on the surfaces of the substrate 1 and the silicide 4. Then, arsenic ions are implanted, heated and activated in a furnace to form an n<+> type diffused layer 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23231887A JPS6476737A (en) | 1987-09-18 | 1987-09-18 | Manufacture of semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23231887A JPS6476737A (en) | 1987-09-18 | 1987-09-18 | Manufacture of semiconductor integrated circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6476737A true JPS6476737A (en) | 1989-03-22 |
Family
ID=16937323
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23231887A Pending JPS6476737A (en) | 1987-09-18 | 1987-09-18 | Manufacture of semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6476737A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0334332A (en) * | 1989-06-29 | 1991-02-14 | Nec Corp | Manufacture of semiconductor device |
| US5139252A (en) * | 1989-07-15 | 1992-08-18 | Mita Industrial Co., Ltd. | Paper-supplying device in an image-forming apparatus |
| US6329229B1 (en) | 1993-11-05 | 2001-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for processing semiconductor device, apparatus for processing a semiconductor and apparatus for processing semiconductor device |
| KR100464386B1 (en) * | 1997-06-11 | 2005-02-28 | 삼성전자주식회사 | Manufacturing method of transistor in semiconductor device |
| US6897100B2 (en) | 1993-11-05 | 2005-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device |
| JP2006032982A (en) * | 2005-09-02 | 2006-02-02 | Semiconductor Energy Lab Co Ltd | Heating processing method of thin film |
| JP2007013117A (en) * | 2005-05-31 | 2007-01-18 | Semiconductor Energy Lab Co Ltd | Method of manufacturing semiconductor device |
| US7214574B2 (en) | 1997-03-11 | 2007-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Heating treatment device, heating treatment method and fabrication method of semiconductor device |
| JP2009516363A (en) * | 2005-11-14 | 2009-04-16 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Structure and method for increasing strain enhancement by spacerless FET and dual liner method |
-
1987
- 1987-09-18 JP JP23231887A patent/JPS6476737A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0334332A (en) * | 1989-06-29 | 1991-02-14 | Nec Corp | Manufacture of semiconductor device |
| US5139252A (en) * | 1989-07-15 | 1992-08-18 | Mita Industrial Co., Ltd. | Paper-supplying device in an image-forming apparatus |
| US6329229B1 (en) | 1993-11-05 | 2001-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for processing semiconductor device, apparatus for processing a semiconductor and apparatus for processing semiconductor device |
| US6897100B2 (en) | 1993-11-05 | 2005-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device |
| US7214574B2 (en) | 1997-03-11 | 2007-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Heating treatment device, heating treatment method and fabrication method of semiconductor device |
| US7410850B2 (en) | 1997-03-11 | 2008-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Heating treatment device, heating treatment method and fabrication method of semiconductor device |
| KR100464386B1 (en) * | 1997-06-11 | 2005-02-28 | 삼성전자주식회사 | Manufacturing method of transistor in semiconductor device |
| JP2007013117A (en) * | 2005-05-31 | 2007-01-18 | Semiconductor Energy Lab Co Ltd | Method of manufacturing semiconductor device |
| JP2006032982A (en) * | 2005-09-02 | 2006-02-02 | Semiconductor Energy Lab Co Ltd | Heating processing method of thin film |
| JP2009516363A (en) * | 2005-11-14 | 2009-04-16 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Structure and method for increasing strain enhancement by spacerless FET and dual liner method |
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