JPS647662A - Insulated gate field-effect transistor - Google Patents
Insulated gate field-effect transistorInfo
- Publication number
- JPS647662A JPS647662A JP16343487A JP16343487A JPS647662A JP S647662 A JPS647662 A JP S647662A JP 16343487 A JP16343487 A JP 16343487A JP 16343487 A JP16343487 A JP 16343487A JP S647662 A JPS647662 A JP S647662A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- semiconductor substrate
- layer
- semiconductor layer
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 abstract 13
- 239000000758 substrate Substances 0.000 abstract 8
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Abstract
PURPOSE:To lower ON resistance while increasing breakdown strength between a source and a drain, and to remove the remarkable generation of irregularities in a semiconductor surface by forming a semiconductor layer, one part of which is connected to a semiconductor substrate along the semiconductor substrate, onto the semiconductor substrate and shaping a source region and a drain region at both end sections of the semiconductor layer. CONSTITUTION:A semiconductor layer 22, the periphery of which is coated through a gate insulating film 26 by a conductive layer 27 as a gate electrode in parallel with the surface of a semiconductor substrate 21, is formed onto the semiconductor substrate 21, and a source region 23 and a drain region 24 are shaped at both end sections of the semiconductor layer 22 so that at least one parts of both regions 23 and 24 are connected to the semiconductor substrate 21. Said semiconductor layer 22 is composed to a bar shape, the source region 23 and the drain region 24 are shaped at both ends in the longitudinal direction of the layer 22 and a channel forming region 25 is arranged between both regions 23 and 24, and the channel forming region 25 is connected to the substrate 21. A gate electrode 27 is formed through the gate insulating layer 26, surrounding the top face of the bar-shaped semiconductor layer 22 and an underside oppositely faced to the substrate 21.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16343487A JPS647662A (en) | 1987-06-30 | 1987-06-30 | Insulated gate field-effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16343487A JPS647662A (en) | 1987-06-30 | 1987-06-30 | Insulated gate field-effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS647662A true JPS647662A (en) | 1989-01-11 |
Family
ID=15773818
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16343487A Pending JPS647662A (en) | 1987-06-30 | 1987-06-30 | Insulated gate field-effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS647662A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000049661A1 (en) * | 1999-02-17 | 2000-08-24 | Koninklijke Philips Electronics N.V. | Insulated-gate field-effect semiconductor device |
-
1987
- 1987-06-30 JP JP16343487A patent/JPS647662A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000049661A1 (en) * | 1999-02-17 | 2000-08-24 | Koninklijke Philips Electronics N.V. | Insulated-gate field-effect semiconductor device |
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