JPS6467956A - Manufacture of semiconductor storage device - Google Patents
Manufacture of semiconductor storage deviceInfo
- Publication number
- JPS6467956A JPS6467956A JP62224045A JP22404587A JPS6467956A JP S6467956 A JPS6467956 A JP S6467956A JP 62224045 A JP62224045 A JP 62224045A JP 22404587 A JP22404587 A JP 22404587A JP S6467956 A JPS6467956 A JP S6467956A
- Authority
- JP
- Japan
- Prior art keywords
- film
- capacitor
- substrate
- silicon
- operates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000003990 capacitor Substances 0.000 abstract 6
- 239000000758 substrate Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 230000003014 reinforcing effect Effects 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/33—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor extending under the transistor
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To increase the capacity of an information storage capacitor and to improve the flatness of a surface by epitaxially growing an SiC film on a single crystalline silicon substrate, forming the capacitor thereon, then removing the substrate to expose the SiC film, and performing various processes. CONSTITUTION:After a gate electrode structure including a word line 4 is formed on a silicon semiconductor substrate 1, an n-type polycrystalline silicon film 8 which operates as one electrode of the capacitor and a silicon dioxide film 9 which operates as a dielectric film are formed. A reinforcing film made of a polycrystalline silicon containing an impurity which operates as another electrode in the capacitor is formed. After a silicon nitride film 11 which becomes the reinforcing film is formed, the substrate 1 is removed, and its front face is inverted to a rear face. Then, after an electrode contact window 12A is formed, a source electrode wiring 13 is formed. Since the thus manufactured semiconductor storage device has a structure in which the information storage capacitor and a gate electrode structure of a word line are buried in the film 10, even if memory cells are miniaturized, the capacity of the capacitor can be increased.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62224045A JP2530175B2 (en) | 1987-09-09 | 1987-09-09 | Method for manufacturing semiconductor memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62224045A JP2530175B2 (en) | 1987-09-09 | 1987-09-09 | Method for manufacturing semiconductor memory device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6467956A true JPS6467956A (en) | 1989-03-14 |
| JP2530175B2 JP2530175B2 (en) | 1996-09-04 |
Family
ID=16807732
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62224045A Expired - Fee Related JP2530175B2 (en) | 1987-09-09 | 1987-09-09 | Method for manufacturing semiconductor memory device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2530175B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1991018418A1 (en) * | 1990-05-23 | 1991-11-28 | Oki Electric Industry Co., Ltd. | Semiconductor memory device and method of manufacturing the same |
| EP0606758A1 (en) * | 1992-12-30 | 1994-07-20 | Samsung Electronics Co., Ltd. | SOI transistor DRAM device and method of producing the same |
| US5410169A (en) * | 1990-02-26 | 1995-04-25 | Kabushiki Kaisha Toshiba | Dynamic random access memory having bit lines buried in semiconductor substrate |
-
1987
- 1987-09-09 JP JP62224045A patent/JP2530175B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5410169A (en) * | 1990-02-26 | 1995-04-25 | Kabushiki Kaisha Toshiba | Dynamic random access memory having bit lines buried in semiconductor substrate |
| WO1991018418A1 (en) * | 1990-05-23 | 1991-11-28 | Oki Electric Industry Co., Ltd. | Semiconductor memory device and method of manufacturing the same |
| EP0606758A1 (en) * | 1992-12-30 | 1994-07-20 | Samsung Electronics Co., Ltd. | SOI transistor DRAM device and method of producing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2530175B2 (en) | 1996-09-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |