JPS6449217A - Vapor growth - Google Patents
Vapor growthInfo
- Publication number
- JPS6449217A JPS6449217A JP20516287A JP20516287A JPS6449217A JP S6449217 A JPS6449217 A JP S6449217A JP 20516287 A JP20516287 A JP 20516287A JP 20516287 A JP20516287 A JP 20516287A JP S6449217 A JPS6449217 A JP S6449217A
- Authority
- JP
- Japan
- Prior art keywords
- lamp
- substrate
- coil
- output
- midway
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To eliminate a slip and to reduce the warpage of a substrate by initially equalizing the heating output of a lamp to that of an RF coil, and setting the output of the lamp to 40-50% of the sum of the heating outputs of the coil and the lamp from the midway of temperature rising. CONSTITUTION:A substrate 36 is set on a susceptor 34, heated by an RF coil 39 to heat the substrate 36 from its rear face, and the substrate 36 is heated from its front face by a lamp 41 to be vapor grown. The heating output of the lamp 41 is substantially equalizing to or higher than that of the coil 39 from the start to the midway of temperature rising of the substrate 36. Then, the output of the lamp 41 is set to 40-50% of the sum or the heating outputs of the coil 39 and the lamp 41 from the midway of temperature rising. Thus, it can prevent a slip to eliminate an automatic doping and a solid diffusion. In this manner, the warpage of the substrate 36 is reduced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20516287A JP2672945B2 (en) | 1987-08-20 | 1987-08-20 | Vapor growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20516287A JP2672945B2 (en) | 1987-08-20 | 1987-08-20 | Vapor growth method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6449217A true JPS6449217A (en) | 1989-02-23 |
| JP2672945B2 JP2672945B2 (en) | 1997-11-05 |
Family
ID=16502452
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20516287A Expired - Fee Related JP2672945B2 (en) | 1987-08-20 | 1987-08-20 | Vapor growth method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2672945B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003092267A (en) * | 2001-09-17 | 2003-03-28 | Denso Corp | Apparatus and method for manufacturing silicon carbide semiconductor |
-
1987
- 1987-08-20 JP JP20516287A patent/JP2672945B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003092267A (en) * | 2001-09-17 | 2003-03-28 | Denso Corp | Apparatus and method for manufacturing silicon carbide semiconductor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2672945B2 (en) | 1997-11-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |