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JPS644020A - X-ray mask - Google Patents

X-ray mask

Info

Publication number
JPS644020A
JPS644020A JP15776787A JP15776787A JPS644020A JP S644020 A JPS644020 A JP S644020A JP 15776787 A JP15776787 A JP 15776787A JP 15776787 A JP15776787 A JP 15776787A JP S644020 A JPS644020 A JP S644020A
Authority
JP
Japan
Prior art keywords
rays
substance
mask
transmitting
absorbing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15776787A
Other languages
Japanese (ja)
Inventor
Hiroo Kinoshita
Takashi Kaneko
Toyoki Kitayama
Nobuyuki Takeuchi
Sunao Ishihara
Hideo Yoshihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP15776787A priority Critical patent/JPS644020A/en
Publication of JPS644020A publication Critical patent/JPS644020A/en
Pending legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To form a high-contrast mask by a method wherein a substance transmitting X-rays and another substance absorbing the X-rays are composed of light elements which are different from each other. CONSTITUTION:In an X-ray mask where a desired pattern of a substance absorbing X-rays is formed on a membrane which is supported by a frame and which is composed of a substance transmitting the X-rays, the substance transmitting the X-rays and the substance absorbing the X-rays are composed of light elements which are different from each other. That is to say, the mask is constituted by a carbon film used as a material transmitting the X-rays and an Si3N4 or SiO2 film 9 used as a material absorbing the X-rays. The mask which is constituted in this manner can be used appropriately in a wavelength range of 44.7-114Angstrom ; its transmission factor at a wavelength of 50Angstrom is 36% for the carbon film of, e.g., 1mum and 0.7% for the Si3N4 film of 0.5mum; a sufficient contrast can be obtained.
JP15776787A 1987-06-26 1987-06-26 X-ray mask Pending JPS644020A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15776787A JPS644020A (en) 1987-06-26 1987-06-26 X-ray mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15776787A JPS644020A (en) 1987-06-26 1987-06-26 X-ray mask

Publications (1)

Publication Number Publication Date
JPS644020A true JPS644020A (en) 1989-01-09

Family

ID=15656865

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15776787A Pending JPS644020A (en) 1987-06-26 1987-06-26 X-ray mask

Country Status (1)

Country Link
JP (1) JPS644020A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5462905A (en) * 1992-08-21 1995-10-31 Toyota Jidosha Kabushiki Kaisha Exhaust gas purifying catalyst

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55102232A (en) * 1979-01-31 1980-08-05 Chiyou Lsi Gijutsu Kenkyu Kumiai Soft x-rays mask and its manufacturing method
JPS5986220A (en) * 1982-09-01 1984-05-18 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Mask for forming pattern of lacquer by x-ray lithographic printing, method of producing same and method of producing semiconductor device by x-ray lithographic printing

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55102232A (en) * 1979-01-31 1980-08-05 Chiyou Lsi Gijutsu Kenkyu Kumiai Soft x-rays mask and its manufacturing method
JPS5986220A (en) * 1982-09-01 1984-05-18 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Mask for forming pattern of lacquer by x-ray lithographic printing, method of producing same and method of producing semiconductor device by x-ray lithographic printing

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5462905A (en) * 1992-08-21 1995-10-31 Toyota Jidosha Kabushiki Kaisha Exhaust gas purifying catalyst

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