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JPS6435956A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6435956A
JPS6435956A JP62191773A JP19177387A JPS6435956A JP S6435956 A JPS6435956 A JP S6435956A JP 62191773 A JP62191773 A JP 62191773A JP 19177387 A JP19177387 A JP 19177387A JP S6435956 A JPS6435956 A JP S6435956A
Authority
JP
Japan
Prior art keywords
distance
contact
drain
voltage
drain contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62191773A
Other languages
Japanese (ja)
Other versions
JPH06103747B2 (en
Inventor
Akihiko Koga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62191773A priority Critical patent/JPH06103747B2/en
Publication of JPS6435956A publication Critical patent/JPS6435956A/en
Publication of JPH06103747B2 publication Critical patent/JPH06103747B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To improve the breakdown withstanding voltage of an output transistor by a method wherein in a MOSFET the drain of which is connected to an external connecting terminal, the distance between the drain contact and the source contact is made equal to the distance between the drain contact and the substrate contact which is close to the drain contact. CONSTITUTION:It is designed so that the distance d1 between a drain contact 9 and a substrate contact 8 is equal to the distance d2 between the drain contact 9 and a source contact 10. Accordingly, even if a high voltage due to static electricity or the like is applied to the drain of an insulated gate field-effect transistor (MOSFET), the current due to discharge of electric charges is uniformly distributed to two paths, thereby making the breakdown voltage very high. Since the voltage causing electrostatic breakdown is a very high voltage, the distance d1 may be a little larger than the distance d2.
JP62191773A 1987-07-30 1987-07-30 Semiconductor device Expired - Lifetime JPH06103747B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62191773A JPH06103747B2 (en) 1987-07-30 1987-07-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62191773A JPH06103747B2 (en) 1987-07-30 1987-07-30 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS6435956A true JPS6435956A (en) 1989-02-07
JPH06103747B2 JPH06103747B2 (en) 1994-12-14

Family

ID=16280287

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62191773A Expired - Lifetime JPH06103747B2 (en) 1987-07-30 1987-07-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH06103747B2 (en)

Also Published As

Publication number Publication date
JPH06103747B2 (en) 1994-12-14

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