JPS6431416A - Photoetching - Google Patents
PhotoetchingInfo
- Publication number
- JPS6431416A JPS6431416A JP62188169A JP18816987A JPS6431416A JP S6431416 A JPS6431416 A JP S6431416A JP 62188169 A JP62188169 A JP 62188169A JP 18816987 A JP18816987 A JP 18816987A JP S6431416 A JPS6431416 A JP S6431416A
- Authority
- JP
- Japan
- Prior art keywords
- parts
- etching
- center part
- etched
- center
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To form an etched film so that it has uniform dimensions at a center part as a whole and manufacture fine integrated circuits, by making the exposure time of a photoresist at the peripheral parts of a semiconductor wafer different from the ones at the other parts, thereby giving selective etching to the etched film. CONSTITUTION:Peripheral parts 2A of a semiconductor wafer 1 are not exposed very much and then only weak exposure causes each resist to be in a state where its functions inefficiently and its extremely insufficient exposure is performed so that its state insures to result in a defective photoresist. Yet a center part is normally exposed. When its part is etched, as to dimension data regarding respective hips in the semiconductor wafer, the amount of scatter between center and end parts becomes small. There is a good reason to suppose that as the boundary to be etched extends to the sides of peripheral parts 2A, the etching conditions of end parts in the vicinity of the boundary between the center part 2 and peripheral parts 2A of etching approach relatively those of etching at most of center parts in the center part 2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62188169A JPS6431416A (en) | 1987-07-27 | 1987-07-27 | Photoetching |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62188169A JPS6431416A (en) | 1987-07-27 | 1987-07-27 | Photoetching |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6431416A true JPS6431416A (en) | 1989-02-01 |
JPH0548928B2 JPH0548928B2 (en) | 1993-07-22 |
Family
ID=16218962
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62188169A Granted JPS6431416A (en) | 1987-07-27 | 1987-07-27 | Photoetching |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6431416A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100307566B1 (en) * | 1998-08-05 | 2001-09-24 | 가네꼬 히사시 | Charged beam drawing apparatus and method thereof |
JP2002367897A (en) * | 2001-06-11 | 2002-12-20 | Denso Corp | Method for manufacturing semiconductor device |
JP2007019223A (en) * | 2005-07-07 | 2007-01-25 | Nec Electronics Corp | Manufacturing method of semiconductor device |
JP2011061169A (en) * | 2009-09-09 | 2011-03-24 | Nanya Technology Corp | Semiconductor manufacturing process, and apparatus therefor |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57204033A (en) * | 1981-06-10 | 1982-12-14 | Toshiba Corp | Formation of fine pattern |
-
1987
- 1987-07-27 JP JP62188169A patent/JPS6431416A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57204033A (en) * | 1981-06-10 | 1982-12-14 | Toshiba Corp | Formation of fine pattern |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100307566B1 (en) * | 1998-08-05 | 2001-09-24 | 가네꼬 히사시 | Charged beam drawing apparatus and method thereof |
JP2002367897A (en) * | 2001-06-11 | 2002-12-20 | Denso Corp | Method for manufacturing semiconductor device |
JP2007019223A (en) * | 2005-07-07 | 2007-01-25 | Nec Electronics Corp | Manufacturing method of semiconductor device |
US7879532B2 (en) | 2005-07-07 | 2011-02-01 | Renesas Electronics Corporation | Method of manufacturing semiconductor device |
JP2011061169A (en) * | 2009-09-09 | 2011-03-24 | Nanya Technology Corp | Semiconductor manufacturing process, and apparatus therefor |
Also Published As
Publication number | Publication date |
---|---|
JPH0548928B2 (en) | 1993-07-22 |
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Legal Events
Date | Code | Title | Description |
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FPAY | Renewal fee payment (event date is renewal date of database) |
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FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080722 Year of fee payment: 15 |
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EXPY | Cancellation because of completion of term | ||
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080722 Year of fee payment: 15 |