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JPS6431416A - Photoetching - Google Patents

Photoetching

Info

Publication number
JPS6431416A
JPS6431416A JP62188169A JP18816987A JPS6431416A JP S6431416 A JPS6431416 A JP S6431416A JP 62188169 A JP62188169 A JP 62188169A JP 18816987 A JP18816987 A JP 18816987A JP S6431416 A JPS6431416 A JP S6431416A
Authority
JP
Japan
Prior art keywords
parts
etching
center part
etched
center
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62188169A
Other languages
Japanese (ja)
Other versions
JPH0548928B2 (en
Inventor
Haruo Amano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62188169A priority Critical patent/JPS6431416A/en
Publication of JPS6431416A publication Critical patent/JPS6431416A/en
Publication of JPH0548928B2 publication Critical patent/JPH0548928B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To form an etched film so that it has uniform dimensions at a center part as a whole and manufacture fine integrated circuits, by making the exposure time of a photoresist at the peripheral parts of a semiconductor wafer different from the ones at the other parts, thereby giving selective etching to the etched film. CONSTITUTION:Peripheral parts 2A of a semiconductor wafer 1 are not exposed very much and then only weak exposure causes each resist to be in a state where its functions inefficiently and its extremely insufficient exposure is performed so that its state insures to result in a defective photoresist. Yet a center part is normally exposed. When its part is etched, as to dimension data regarding respective hips in the semiconductor wafer, the amount of scatter between center and end parts becomes small. There is a good reason to suppose that as the boundary to be etched extends to the sides of peripheral parts 2A, the etching conditions of end parts in the vicinity of the boundary between the center part 2 and peripheral parts 2A of etching approach relatively those of etching at most of center parts in the center part 2.
JP62188169A 1987-07-27 1987-07-27 Photoetching Granted JPS6431416A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62188169A JPS6431416A (en) 1987-07-27 1987-07-27 Photoetching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62188169A JPS6431416A (en) 1987-07-27 1987-07-27 Photoetching

Publications (2)

Publication Number Publication Date
JPS6431416A true JPS6431416A (en) 1989-02-01
JPH0548928B2 JPH0548928B2 (en) 1993-07-22

Family

ID=16218962

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62188169A Granted JPS6431416A (en) 1987-07-27 1987-07-27 Photoetching

Country Status (1)

Country Link
JP (1) JPS6431416A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100307566B1 (en) * 1998-08-05 2001-09-24 가네꼬 히사시 Charged beam drawing apparatus and method thereof
JP2002367897A (en) * 2001-06-11 2002-12-20 Denso Corp Method for manufacturing semiconductor device
JP2007019223A (en) * 2005-07-07 2007-01-25 Nec Electronics Corp Manufacturing method of semiconductor device
JP2011061169A (en) * 2009-09-09 2011-03-24 Nanya Technology Corp Semiconductor manufacturing process, and apparatus therefor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57204033A (en) * 1981-06-10 1982-12-14 Toshiba Corp Formation of fine pattern

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57204033A (en) * 1981-06-10 1982-12-14 Toshiba Corp Formation of fine pattern

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100307566B1 (en) * 1998-08-05 2001-09-24 가네꼬 히사시 Charged beam drawing apparatus and method thereof
JP2002367897A (en) * 2001-06-11 2002-12-20 Denso Corp Method for manufacturing semiconductor device
JP2007019223A (en) * 2005-07-07 2007-01-25 Nec Electronics Corp Manufacturing method of semiconductor device
US7879532B2 (en) 2005-07-07 2011-02-01 Renesas Electronics Corporation Method of manufacturing semiconductor device
JP2011061169A (en) * 2009-09-09 2011-03-24 Nanya Technology Corp Semiconductor manufacturing process, and apparatus therefor

Also Published As

Publication number Publication date
JPH0548928B2 (en) 1993-07-22

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