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JPS6423592A - Optical semiconductor element mounter - Google Patents

Optical semiconductor element mounter

Info

Publication number
JPS6423592A
JPS6423592A JP62179158A JP17915887A JPS6423592A JP S6423592 A JPS6423592 A JP S6423592A JP 62179158 A JP62179158 A JP 62179158A JP 17915887 A JP17915887 A JP 17915887A JP S6423592 A JPS6423592 A JP S6423592A
Authority
JP
Japan
Prior art keywords
laser
electrode face
heat sink
bases
block
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62179158A
Other languages
Japanese (ja)
Inventor
Yuichi Odagiri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62179158A priority Critical patent/JPS6423592A/en
Publication of JPS6423592A publication Critical patent/JPS6423592A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain an optical semiconductor element mounted which has excel lent heat sink and durability against an ultrahigh speed transmission by provid ing a heat sink on a first electrode face of the side remote from an active layer, providing a block on a second electrode face of the side near the layer, and providing a sandwich-like optical semiconductor element. CONSTITUTION:A semiconductor laser 204 of an N-type substrate is so secured upside up by fusion-bonding that an active layer 207 is separated from a heat sink 200 with its first electrode face 208 in contact with the heatsink 200. Two holding bases 209 made of the same material as that of the heat sink 200 are aligned at both sides of the laser 204, and simultaneously fusion-bonded to the laser 204. In relation to electric connections, a positive electrode terminal is first used instead of a block 211 for fusion-bonding the bases 209 to the second electrode face 210 of the laser 204. To secure the block 211, the bases 209 to the second electrode face 210, two bases 209 are formed in 'U' shape to support the block 211, and the laser 204 being slightly thinner than the base 209 is softly contacted therewith.
JP62179158A 1987-07-20 1987-07-20 Optical semiconductor element mounter Pending JPS6423592A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62179158A JPS6423592A (en) 1987-07-20 1987-07-20 Optical semiconductor element mounter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62179158A JPS6423592A (en) 1987-07-20 1987-07-20 Optical semiconductor element mounter

Publications (1)

Publication Number Publication Date
JPS6423592A true JPS6423592A (en) 1989-01-26

Family

ID=16060957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62179158A Pending JPS6423592A (en) 1987-07-20 1987-07-20 Optical semiconductor element mounter

Country Status (1)

Country Link
JP (1) JPS6423592A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006210510A (en) * 2005-01-26 2006-08-10 Sony Corp Method for manufacturing light-emitting device
US7927896B2 (en) 2005-01-26 2011-04-19 Sony Corporation Method of production of semiconductor light emission device and method of production of light emission apparatus
JP2013089733A (en) * 2011-10-17 2013-05-13 Sumitomo Electric Ind Ltd Semiconductor laser module and semiconductor laser device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006210510A (en) * 2005-01-26 2006-08-10 Sony Corp Method for manufacturing light-emitting device
US7927896B2 (en) 2005-01-26 2011-04-19 Sony Corporation Method of production of semiconductor light emission device and method of production of light emission apparatus
JP2013089733A (en) * 2011-10-17 2013-05-13 Sumitomo Electric Ind Ltd Semiconductor laser module and semiconductor laser device

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