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JPS6420689A - Manufacture of diamond light emitting device - Google Patents

Manufacture of diamond light emitting device

Info

Publication number
JPS6420689A
JPS6420689A JP17682587A JP17682587A JPS6420689A JP S6420689 A JPS6420689 A JP S6420689A JP 17682587 A JP17682587 A JP 17682587A JP 17682587 A JP17682587 A JP 17682587A JP S6420689 A JPS6420689 A JP S6420689A
Authority
JP
Japan
Prior art keywords
diamond
light emitting
emitting device
atoms
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17682587A
Other languages
Japanese (ja)
Inventor
Shuichi Sato
Kazuo Tsuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP17682587A priority Critical patent/JPS6420689A/en
Priority to EP19880100252 priority patent/EP0275063A3/en
Priority to US07/143,114 priority patent/US4880613A/en
Publication of JPS6420689A publication Critical patent/JPS6420689A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To improve oscillation efficiency, by employing a diamond with specific nitrogen concentration which is synthesized using a temperature difference method, and by irradiating this diamond with neutron thereafter performing heat treatment. CONSTITUTION:A diamond is employed which is so formed using temperature difference method as to have a nitrogen concentration of 1X10<17>-2X10<20>atoms/ cm<2> and a total content of metal atoms comprising Ni, Fe, Co, Mn, Cr, Al, Mo, Ti, V and Hf of 3.5X10<18>atoms/cm<2>. This diamond is irradiated with neutron of 1X10<15>cm<-2>-1X10<18>cm<-2>, and is then treated with heat treatment at temperature of 600-1200 deg.C with pressures below 1torr. Now, preferably the synthetic diamond is of Ib type and has a oscillation wavelength of 650-780nm. Therefore, the diamond light emitting device, in which the distribution of concentration of color center is of uniformity, can be obtained, and the oscillation efficiency thereof can be improved.
JP17682587A 1987-01-12 1987-07-15 Manufacture of diamond light emitting device Pending JPS6420689A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP17682587A JPS6420689A (en) 1987-07-15 1987-07-15 Manufacture of diamond light emitting device
EP19880100252 EP0275063A3 (en) 1987-01-12 1988-01-11 Light emitting element comprising diamond and method for producing the same
US07/143,114 US4880613A (en) 1987-01-12 1988-01-12 Light emitting element comprising diamond and method for producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17682587A JPS6420689A (en) 1987-07-15 1987-07-15 Manufacture of diamond light emitting device

Publications (1)

Publication Number Publication Date
JPS6420689A true JPS6420689A (en) 1989-01-24

Family

ID=16020499

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17682587A Pending JPS6420689A (en) 1987-01-12 1987-07-15 Manufacture of diamond light emitting device

Country Status (1)

Country Link
JP (1) JPS6420689A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4985226A (en) * 1988-06-20 1991-01-15 Sumitomo Electric Industries, Ltd. Hole-burning material and production thereof
US5420879A (en) * 1992-09-16 1995-05-30 Sumitomo Electric Industries, Ltd. Solid state laser
JP2001240487A (en) * 2000-02-29 2001-09-04 Natl Inst Of Advanced Industrial Science & Technology Meti Method for substrate surface treatment, and substrate for film formation manufactured by this method
JP2012530676A (en) * 2009-06-26 2012-12-06 エレメント シックス リミテッド Method for producing fancy orange single-crystal CVD diamond and the resulting product
US8986646B2 (en) 2009-06-26 2015-03-24 Element Six Technologies Limited Diamond material

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4985226A (en) * 1988-06-20 1991-01-15 Sumitomo Electric Industries, Ltd. Hole-burning material and production thereof
US5420879A (en) * 1992-09-16 1995-05-30 Sumitomo Electric Industries, Ltd. Solid state laser
JP2001240487A (en) * 2000-02-29 2001-09-04 Natl Inst Of Advanced Industrial Science & Technology Meti Method for substrate surface treatment, and substrate for film formation manufactured by this method
JP2012530676A (en) * 2009-06-26 2012-12-06 エレメント シックス リミテッド Method for producing fancy orange single-crystal CVD diamond and the resulting product
US8986646B2 (en) 2009-06-26 2015-03-24 Element Six Technologies Limited Diamond material
US9017632B2 (en) 2009-06-26 2015-04-28 Element Six Technologies Limited Diamond material
US9255009B2 (en) 2009-06-26 2016-02-09 Element Six Technologies Limited Diamond material

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